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In situ X-ray reflectivity of indium supplied on GaN templates by metal organic vapor phase epitaxy.
- Source :
- Journal of Applied Physics; Sep2013, Vol. 114 Issue 12, p124906, 7p, 1 Color Photograph, 2 Diagrams, 3 Charts, 5 Graphs
- Publication Year :
- 2013
-
Abstract
- The indium supplied on c-plane GaN templates using Metal organic vapor phase epitaxy was studied by in situ X-ray reflectivity (XRR) at 800 °C. The presence of liquid indium layers on the GaN (0001) surface was demonstrated using data-fitting of XRR measurements, ex situ atomic force microscope, auger electron spectroscopy, and cross-sectional scanning electron microscope. These measurements demonstrated that a liquid indium layer coexisted with indium droplets on top of the GaN (0001) surface at 800 °C. The liquid indium film thicknesses increased with increasing TMIn supply time and did not change during cooling from 800 °C to room temperature. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 114
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 90481685
- Full Text :
- https://doi.org/10.1063/1.4823809