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2D atomic sheets of transition metal dichalcogenides (TMDs) have a tremendous potential for next-generation optoelectronics since they can be stacked layer-by-layer to form van der Waals (vdW) heterostructures. This allows not only bypassing difficulties in heteroepitaxy of lattice-mismatched semiconductors of desired functionalities but also providing a scheme to design new optoelectronics that can surpass the fundamental limitations on their conventional semiconductor counterparts. Herein, a novel 2D h-BN/p-MoTe

2D atomic sheets of transition metal dichalcogenides (TMDs) have a tremendous potential for next-generation optoelectronics since they can be stacked layer-by-layer to form van der Waals (vdW) heterostructures. This allows not only bypassing difficulties in heteroepitaxy of lattice-mismatched semiconductors of desired functionalities but also providing a scheme to design new optoelectronics that can surpass the fundamental limitations on their conventional semiconductor counterparts. Herein, a novel 2D h-BN/p-MoTe2 /graphene/n-SnS2 /h-BN p-g-n junction, fabricated by a layer-by-layer dry transfer, demonstrates high-sensitivity, broadband photodetection at room temperature. The combination of the MoTe2 and SnS2 of complementary bandgaps, and the graphene interlayer provides a unique vdW heterostructure with a vertical built-in electric field for high-efficiency broadband light absorption, exciton dissociation, and carrier transfer. The graphene interlayer plays a critical role in enhancing sensitivity and broadening the spectral range. An optimized device containing 5-7-layer graphene has been achieved and shows an extraordinary responsivity exceeding 2600 A W-1 with fast photoresponse and specific detectivity up to ≈1013 Jones in the ultraviolet-visible-near-infrared spectrum. This result suggests that the vdW p-g-n junctions containing multiple photoactive TMDs can provide a viable approach toward future ultrahigh-sensitivity and broadband photonic detectors.