Ultrahigh-Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe

2D atomic sheets of transition metal dichalcogenides (TMDs) have a tremendous potential for next-generation optoelectronics since they can be stacked layer-by-layer to form van der Waals (vdW) heterostructures. This allows not only bypassing difficulties in heteroepitaxy of lattice-mismatched semiconductors of desired functionalities but also providing a scheme to design new optoelectronics that can surpass the fundamental limitations on their conventional semiconductor counterparts. Herein, a novel 2D h-BN/p-MoTe