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1. P-139L:Late-News Poster: AC Gate-Drain-Bias Stress Study of amorphous Indium Gallium Zinc Oxide Thin Film Transistors for GOA Applications

Author

Ching Shun Lin, Ta-Wen Liao, Chao-Yu Yang, Ting Hsieh, Shih Che Huang, Hao-Lin Chiu, Chun Nan Lin, Bo-Liang Yeh, Hsien-Kai Tseng, and Wen Ching Tsai

Subjects
Stress (mechanics), Materials science, Reliability (semiconductor), Amorphous indium gallium zinc oxide, Thin-film transistor, business.industry, Contact resistance, Electronic engineering, Optoelectronics, Contact region, business, Bias stress
Abstract

This paper investigates the reliability behavior of IGZO TFT with different widths under AC gate and drain stress. Device of larger width suffers from worse current degradation. By comparing the contact resistance after stress such behavior can be attributed to the damaged contact region by large current during stress.

Published
2012

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