P-139L:Late-News Poster: AC Gate-Drain-Bias Stress Study of amorphous Indium Gallium Zinc Oxide Thin Film Transistors for GOA Applications

Authors :: Ching Shun Lin
Ta-Wen Liao
Chao-Yu Yang
Ting Hsieh
Shih Che Huang
Hao-Lin Chiu
Chun Nan Lin
Bo-Liang Yeh
Hsien-Kai Tseng
Wen Ching Tsai
Source :: SID Symposium Digest of Technical Papers. 43:1126-1128
Publication Year :: 2012
Publisher :: Wiley, 2012.
Abstract: This paper investigates the reliability behavior of IGZO TFT with different widths under AC gate and drain stress. Device of larger width suffers from worse current degradation. By comparing the contact resistance after stress such behavior can be attributed to the damaged contact region by large current during stress.

Subjects :: Stress (mechanics)
Materials science
Reliability (semiconductor)
Amorphous indium gallium zinc oxide
Thin-film transistor
business.industry
Contact resistance
Electronic engineering
Optoelectronics
Contact region
business
Bias stress

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