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In thin film deposition, Ar/SiH4 mixtures are widely used to make polysilicon (poly-Si) and hydrogenated amorphous silicon (a-SiH) layers. Despite extensive research conducted on this mixture, little research has focused on the variations in plasma properties, radicals, and ions that occur during plasma discharge in inductively coupled plasma (ICP) equipment compared to capacitive coupled plasma equipment. In this paper, we investigate the properties of the plasma generated through mathematical modeling of Ar/SiH4 inductive coupled plasma discharge by using the electron energy distribution function (EEDF) obtained by solving the Boltzmann equation. We closely examine the variation in plasma properties and the correlation of plasma variables by controlling the radio frequency power and gas pressure during the process conditions. The Boltzmann equation was computed by assuming the two-term approximation, resulting in a Druyvesteyn-like EEDF due to the high-pressure conditions. To validate the simulation model, the 2D simulation results were compared with probe measurements performed in a two-turn ICP chamber. The results demonstrated encouraging agreement with the measured data. This research not only enhances our comprehension of the discharge characteristics but also establishes a framework for optimizing the discharge conditions to enhance the process and effectively regulate external variables. [ABSTRACT FROM AUTHOR]

This work investigates the physical properties of Al1−xScxN thin films sputtered at low temperatures by varying the process conditions. Specifically, the films were deposited at room temperature by applying a radio frequency power equal to 150 W to an AlSc alloy (60:40) target, varying the nitrogen flux percentage in the (Ar + N2) sputtering atmosphere (30%, 40%, 50%, and 60%) and keeping constant the working pressure at 5 × 10−3 mbar. The structural and chemical properties of the Al1−xScxN films were studied by x-ray diffraction and Rutherford backscattering spectrometry techniques, respectively. The piezoelectric response was investigated by piezoresponse force microscopy. In addition, the surface potential was evaluated for the first time for Sc-doped AlN thin films by Kelvin probe force microscopy, providing piezoelectric coefficients free from the no-piezoelectric additional effect to the mechanical deformation, i.e., the electrostatic force. By alloying AlN with scandium, the piezoelectric response was strongly enhanced (up to 200% compared to undoped AlN), despite the low deposition temperature and the absence of any other additional energy source supplied to the adatoms during thin film growth, which generally promotes a better structural arrangement of polycrystalline film. This is a strategic result in the field of microelectromechanical systems completely fabricated at low temperatures. [ABSTRACT FROM AUTHOR]

A time-dependent hybrid plasma model composed of a zero-dimensional global model and a two-dimensional fluid model is proposed for simulation of plasma chemistry and transportation of plasma during Cr thin film deposition by deep oscillation magnetron sputtering (DOMS). The global model deals with plasma reactions in the ionization region near the target with discharge voltage and current waveforms as inputs. The temporal plasma characteristics calculated by the global model are utilized as a boundary condition for the two-dimensional fluid model to simulate high-density plasma transportation in the diffusion region through the entire macropulse period. The full momentum equation taking inertia force into consideration is applied for ion momentum conservation in the fluid model instead of using the drift-diffusion approximation, which ensures validity of the simulation for low-pressure plasmas. The deposition flux as well as the kinetic and potential energy fluxes transferred to the growing films are calculated by the hybrid model. Microstructure evolution of the DOMS deposited Cr thin films from zone I to zone T is attributed to the growing kinetic and potential energies as the charging voltage increases according to the structure zone diagram. The deposition rate loss in DOMS is explained by the back attraction effect, sputtering yield effect, and densification of the films. [ABSTRACT FROM AUTHOR]

In this study, we developed a hybrid machine learning technique by combining appropriate classification and regression models to address challenges in producing high-mobility amorphous In2O3:Sn (a-ITO) films, which were fabricated by radio-frequency magnetron sputtering with a nitrogen-mediated amorphization method. To overcome this challenge, this hybrid model that was consisted of a support vector machine as a classification model and a gradient boosting regression tree as a regression model predicted the boundary conditions of crystallinity and experimental conditions with high mobility for a-ITO films. Based on this model, we were able to identify the boundary conditions between amorphous and crystalline crystallinity and thin film deposition conditions that resulted in a-ITO films with 27% higher mobility near the boundary than previous research results. Thus, this prediction model identified key parameters and optimal sputtering conditions necessary for producing high-mobility a-ITO films. The identification of such boundary conditions through machine learning is crucial in the exploration of thin film properties and enables the development of high-throughput experimental designs. [ABSTRACT FROM AUTHOR]

Spectroscopic ellipsometry is a powerful method with high surface sensitivity that can be used to monitor the growth of even sub-monolayer films. However, analysis of ultrathin films is complicated by the correlation between the dielectric constant and thickness. This problem is usually resolved by fixing one or the other value, limiting the information that can be extracted. Here, we propose a method to determine unambiguously the refractive index, extinction coefficient, and thickness of a film when a transparent range is available in the energy range investigated. We decompose the analysis in three steps. First, the thickness of the film is determined from the transparent range of the film. Then, knowing the thickness of the layer, an initial estimation of the refractive index and extinction coefficient is made based on a first-order Taylor expansion of the ellipsometric ratio. Finally, using this estimation, a numerical iteration is done to ensure convergence of the fit toward the solution. A theoretical example of the method is given for two different thicknesses of TiO2 films. Finally, the method is applied to the experimental data measured during the atomic layer deposition of a thin film of Hf0.5Zr0.5O2 grown on Si. The thickness, refractive index, and extinction coefficient are retrieved with high precision (respectively, 0.01 and 0.002) in the energy range of 3.5–6.5 eV. A detailed analysis is presented on the accuracy of the retrieved values and their dependency on random and systematic errors for different energy ranges. [ABSTRACT FROM AUTHOR]

The versatility of spin coating technology makes it a preferred method for producing the thin film layers used to manufacture products from solar panels and smartphones to sunglasses and CDs. However, the process requires a flat, rigid substrate to produce uniform films, which limits its use to planar devices. A novel multi-axis manipulator has been developed to extend the application of spin coating, enabling controlled thin film deposition onto curved surfaces. Various rotational schemes were studied to link the flow of a liquid film over a curved surface to forces induced by complex rotational dynamics. When the angular velocity exceeds a threshold, centrifugal force dominates the flow, pushing the fluid away from the instantaneous axis of rotation. This produces axisymmetric coating profiles when using consistent single or dual-axis rotation. Areas of near uniformity present around the spin axis poles for single-axis rotation and around the substrate's equator for dual-axis schemes. Sensitivities between the spherical substrate dynamics and the evolving fluid flow were investigated, exploring the parameters that promoted the production of uniform curved film layers for microfabrication processes. This enabled the evolution of the spin coating technique to effectively form curved polymer coatings with improved thickness control. The presented research outlines the capabilities of a multi-axis spin coating machine when used to coat spherical substrates. Therefore, enabling the use of fluid mechanics models to identify the optimal motion kinematics required to create uniform curved films. [ABSTRACT FROM AUTHOR]

In this study, we successfully synthesized three gallium oxide thin films on (0001)-faceted Al 2 O 3 substrates using hydrogen-reduced chemical vapor deposition (CVD) at different deposition temperatures, resulting in distinct morphologies and crystalline phases. These films consist of two pure-phase β-Ga 2 O 3 films and one mixed-phase film comprising both β- and ε-Ga 2 O 3 phases. The mixed-phase samples were subsequently annealed at high temperatures to obtain pure-phase β-Ga 2 O 3 thin films. Furthermore, by precisely controlling the growth temperature, we achieved in-situ formation of Ga 2 O 3 nanostructures (nanowires and nanoribbons) on the surface of the β-Ga 2 O 3 thin films. The presence of different dominant crystal planes in the samples was confirmed through X-ray diffraction analysis (XRD) for verification purposes. In directly grown β-Ga 2 O 3 films, the (−201) plane emerged as the primary crystallographic plane, while both the (−201) and (401) planes dominated in β-Ga 2 O 3 films obtained via ε-Ga 2 O 3 film annealing. Raman spectroscopy findings further supported these observations regarding the crystalline phase of the films as observed through XRD analysis. Scanning electron microscopy (SEM) images revealed distinct film morphologies resulting from variations in deposition temperatures. A flatter surface was observed when a higher proportion of ε-Ga 2 O 3 was present in the film, however, regular cracking occurred after annealing. Atomic Force Microscope (AFM) images demonstrated that at a deposition temperature of 800 °C, regular steps were present on the film's surface. Mixed-phase films exhibited hillock morphology that disappeared after annealing, leading to a decrease in the surface roughness in root mean square (RMS) value. By elevating the growth temperature, a significantly enhanced density of gallium oxide nanoribbons can be seamlessly integrated onto the film surface. The transferred nanoribbons exhibit an ultra-thin profile with a minimum thickness of merely 12 nm, rendering them more slender and economically advantageous in comparison to conventional mechanical stripping methods. This study presents a CVD-based approach for growing gallium oxide thin films with varying morphologies by employing temperature modulation and demonstrates an innovative one-step method for growing nanostructures on gallium oxide films in situ, providing valuable insights for future device development involving gallium oxide. [ABSTRACT FROM AUTHOR]

Orthorhombic perovskite GdFeO3 nanostructures are promising materials with multiferroic properties. In this study, a new low‐temperature plasma‐assisted approach is developed via dual anodic dissolution of solid metallic precursors for the preparation of perovskite GdFeO3 nanoparticles (NPs) that can be collected both as colloids as well as deposited as a thin film on a substrate. Two solid metallic foils of Gd and Fe are used as precursors, adding to the simplicity and sustainability of the method. The formation of the orthorhombic perovskite GdFeO3 phase is supported by high‐resolution transmission electron microscopy, X‐ray diffraction, X‐ray photoelectron spectroscopy, and Raman measurements, while a uniform elemental distribution of Gd, Fe, and O is confirmed by energy dispersive X‐ray spectroscopy, proving the successful preparation of ternary compound NPs. The magnetic properties of the NPs show zero remnant magnetization typical of antiferromagnetic materials, and saturation at high fields that can be caused by spin interaction between Gd and Fe magnetic sublattices. The formation mechanism of ternary compound NPs in this novel plasma‐assisted method is also discussed. This method is also modified to demonstrate the direct one‐step deposition of thin films, opening up opportunities for their future applications in the fabrication of magnetic memory devices and gas sensors. [ABSTRACT FROM AUTHOR]

In this perspective we discuss the progress made in the mechanistic studies of the surface chemistry associated with the atomic layer deposition (ALD) of metal films and the usefulness of that knowledge for the optimization of existing film growth processes and for the design of new ones. Our focus is on the deposition of late transition metals. We start by introducing some of the main surface-sensitive techniques and approaches used in this research. We comment on the general nature of the metallorganic complexes used as precursors for these depositions, and the uniqueness that solid surfaces and the absence of liquid solvents bring to the ALD chemistry and differentiate it from what is known from metalorganic chemistry in solution. We then delve into the adsorption and thermal chemistry of those precursors, highlighting the complex and stepwise nature of the decomposition of the organic ligands that usually ensued upon their thermal activation. We discuss the criteria relevant for the selection of co-reactants to be used on the second half of the ALD cycle, with emphasis on the redox chemistry often associated with the growth of metallic films starting from complexes with metal cations. Additional considerations include the nature of the substrate and the final structural and chemical properties of the growing films, which we indicate rarely retain the homogeneous 2D structure often aimed for. We end with some general conclusions and personal thoughts about the future of this field. [ABSTRACT FROM AUTHOR]

This study aims to produce cadmium selenium (CdSe) thin films with a hexagonal structure using the chemical bath deposition (CBD) method. In this study, 0.075 g of cadmium chloride (CdCl2) is used as a Cd source, 0.06 g of etilendiamin tetra acetic acid [(EDTA), (C10H16N2O8)] as a complexing agent, and 0.1 g of selenourea [CSe(NH2)2] as a selenium source. Ammonia (NH3) is employed to adjust the pH value of the solutions and varying amounts of Na2SO3 (from 0.1 to 1.6 g) are used as a reducing agent. This chemical combination has been used for the first time to produce CdSe thin films. X‐ray diffraction (XRD) results confirm that CdSe thin films exhibit a hexagonal structure without requiring annealing. The energy band gap values calculated via absorption graphs range from 1.76 to 1.91 eV. The surface morphologies are examined using scanning electron microscope (SEM) images. SEM images show that there are no voids, cracks, or pinholes. The software named ImageJ is used to determine surface roughness, showing range from 6 to 8 nm. The photographs of the samples show that some films adhere homogeneously to the surfaces of substrates, depending on the amount of Na2SO3 used. [ABSTRACT FROM AUTHOR]

The vacuum‐ultraviolet‐photoionization chamber was constructed to allow controlled ion generation and well‐defined surface treatment with these ions at atmospheric pressure. It utilizes atmospheric helium plasma as a photon source and separates the ion generation from the plasma by an aerodynamic window. The ions are guided to the grounded substrate by a weak electric field, while the diffusive transport of neutrals is reduced by a helium gas flow along the substrate. Ionic species and the absolute ion flux were determined in the substrate region. Ion‐based thin film deposition using a C2H2 ${{\rm{C}}}_{2}{{\rm{H}}}_{2}$ precursor was investigated as a model process. The proposed system enables future investigation of e.g. the isolated interaction of ions with biological substrates. [ABSTRACT FROM AUTHOR]

Hydrogenated two-dimensional (2D) Si nanosheet is a layered semiconductor synthesized by topotactic conversion of CaSi2 in HCl solution at low temperatures. The unavailability of scalable thin film deposition techniques has hindered the experimental analysis of physical properties. This study has investigated the synthesis of CaSi2 films by close-spaced evaporation and their topotactic conversion to 2D Si nanosheet films. A single-phase CaSi2 (6R) formation window was identified in the growth temperature range of 800–950 °C. Secondary phases (CaSi and Si polycrystals) formed outside the optimal window have also been identified. The x-ray pole figure of the representative CaSi2 film has shown that the film grows epitaxially with two epitaxial variants on the Si(111) surface with (0001) orientation. The CaSi2 films with and without the Si polycrystals have been subjected to low-temperature HCl solution treatment. Mostly hydrogenated 2D Si nanosheet films were synthesized without the Si polycrystals, while CaSi2 remained with the Si polycrystals, highlighting the importance of single-phase CaSi2 films. [ABSTRACT FROM AUTHOR]

Miniaturization of microelectronic devices necessitates atomic precision in manufacturing techniques, particularly in the deposition of thin films. Atomic layer deposition (ALD) is recognized for its precision in controlling film thickness and composition on intricate three-dimensional structures. This study focuses on the ALD nucleation and growth mechanisms of ruthenium (Ru), a metal that has significant future implications for microelectronics. Despite its advantages, the deposition of a high surface-free energy material like Ru on a low surface-free energy material such as an oxide often faces challenges of large nucleation delays and non-uniform growth. To address these challenges, we explored the effectiveness of organometallic surface pretreatments using trimethylaluminum (TMA) or diethylzinc (DEZ) to enhance Ru film nucleation and growth. Our study employed a less-studied Ru precursor, cyclopentadienylethyl(dicarbonyl)ruthenium [RuCpEt(CO)2], which demonstrated promising results in terms of reduced nucleation delay and increased film continuity. Ru ALD was performed on silicon substrates with native oxide, using RuCpEt(CO)2 and O2 as coreactants. Our findings reveal that surface pretreatment significantly improves nucleation density and film thickness within the initial 60 ALD cycles, achieving up to a 3.2-fold increase in Ru surface coverage compared to nonpretreated substrates. Supported by density functional theory calculations, we propose that the enhanced nucleation observed with RuCpEt(CO)2 compared to previously-studied Ru(Cp)2 is due to two key mechanisms: the facilitated removal of CO ligands during deposition, which enhances the reactivity of the precursor, and a hydrogen-abstraction reaction involving the ethyl ligand of RuCpEt(CO)2 and the metal-alkyl groups on the surface. This study not only advances our understanding of Ru ALD processes but also highlights the significant impact of precursor chemistry and surface treatments in optimizing ALD for advanced microelectronic applications. [ABSTRACT FROM AUTHOR]

We report herein the analysis of the properties of copper(I) oxide thin films deposited by an optimized ammonium-free successive ion layer adsorption and reaction (SILAR) technique. The Cu2O thin film deposition process was carried out at room temperature using copper acetate monohydrate, sodium citrate as complexing agent, and hydrogen peroxide as precursors of copper and oxygen ions, respectively. The harmless and easy-to-handle sodium citrate replaces the volatile NH4OH commonly employed as complexing agent in the SILAR technique for the deposition of metal oxide thin films. The optical, structural, morphological, and electrical properties of the as-deposited Cu2O thin films were studied as a function of the number of cycles during deposition, as well as their modifications produced by the effect of rapid thermal annealing (RTA) in vacuum in a temperature range of 200–250°C for 1 min, 3 min, and 5 min. The as-deposited thin films had cubic crystalline structure corresponding to the Cu2O phase as determined by x-ray diffraction (XRD), with a direct energy bandgap of 2.43–2.51 eV depending on the number of cycles, and electrical resistivity of the order of 103 Ω cm. The XRD and x-ray photoelectron spectroscopy (XPS) analysis of the Cu2O thin films treated by RTA demonstrated an increase of the crystal size with time and temperature of the RTA and reduction effects from Cu2+ to Cu1+ oxidation states. On the other hand, the RTA treatments also decreased their energy bandgap to 2.38 eV and electrical resistivity to 102 Ω cm. The high energy bandgap values of the Cu2O thin films were attributed to quantum confinement effects produced by their small crystal size in the range of 3.6–8.6 nm. [ABSTRACT FROM AUTHOR]

In this work, SnO2 thin films are deposited by drop–dry deposition (DDD), which is a simple, low-cost chemical technique for thin film deposition. The deposition solution contains Na2SnO3 as the Sn source, and is highly stable without spontaneous reactions in the solution. The solution is dropped on a substrate heated to 60°C on a heater plate. According to Auger electron spectroscopy, the deposit will be stoichiometric SnO2. The film is n-type and transparent in the visible range. The pn heterostructure is fabricated by depositing SnO2 on p-type NiO. The NiO film is also fabricated by DDD. Ni(OH)2 is deposited using a solution containing Ni(NO3)2 and NaOH, and then is converted to NiO by annealing at 400°C. The SnO2/NiO structure is transparent in the visible range and shows clear rectification properties and photovoltaic effects. Thus, a transparent solar cell is successfully fabricated by DDD. [ABSTRACT FROM AUTHOR]

Diamond containing nitrogen‐vacancy centers (NV−) is one of the most investigated materials for quantum technologies, because of this system's exceptional spin properties. Although the NV− optical transition is very bright, it suffers from spectral diffusion and weak zero‐phonon line, and is in the visible range. This limits integration into quantum photonic structures and interfacing with optical fiber networks. In contrast, rare earth (RE) ions exhibit extremely narrow and stable optical transitions, including erbium's 1.5 µm telecom wavelength. Combining RE with NV− properties through short‐range interactions is however challenging as RE do not readily enter the diamond lattice. In this work, a thin‐film‐based architecture in which RE and NV− centers can interact while preserving their unique properties is introduced. Thin films of Er3+:Y2O3 are grown by chemical vapor deposition on diamond substrates with well‐crystallized and highly textured structures. An extensive spectroscopic study of Er3+ transitions at room and low temperatures further reveals that photoluminescence spectra and decays are close to bulk materials. It is also shown that Y2O3 thin film deposition has no detrimental effects on NV− optical and spin properties. RE thin films deposited on diamond can thus be suitable for building hybrid materials for new functionalities in quantum sensing, communication, and processing. [ABSTRACT FROM AUTHOR]

Flux calibrations in multi-source thermal co-evaporation of thin films have been developed based on real-time spectroscopic ellipsometry (RTSE) measurements. This methodology has been applied to fabricate CuInSe2 (CIS) thin film photovoltaic (PV) absorbers, as an illustrative example, and their properties as functions of deposition rate have been studied. In this example, multiple Cu layers are deposited step-wise onto the same Si wafer substrate at different Cu evaporation source temperatures (TCu). Multiple In2Se3 layers are deposited similarly at different In source temperatures (TIn). Using RTSE, the Cu and In2Se3 deposition rates are determined as functions of TCu and TIn. These rates, denoted Reff, are measured in terms of effective thickness which is the volume per planar substrate area and accounts for surface roughness variations with deposition time. By assuming that all incident metal atoms are incorporated into the films and that the atomic concentrations in the deposited material components are the same as in single crystals, initial estimates of the Cu and In atom fluxes can be made versus TCu and TIn. Applying these estimates to the co-evaporation of a set of CIS films from individual Cu, In, and Se sources, atomic concentration corrections can be assigned to the Cu and In2Se3 calibration films. The corrections enable generation of a novel calibration diagram predicting the atomic ratio y = [Cu]/[In] and rate Reff within the TCu-TIn plane. Using this diagram, optimization of the CIS properties as a PV absorber can be achieved versus both y and Reff. [ABSTRACT FROM AUTHOR]

With a focus on Mn based organometallic compounds with suitable physico‐chemical properties to serve as precursors for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of Mn‐containing materials, systematic synthetic approaches with ligand variation, detailed characterization, and theoretical input from density functional theory (DFT) studies are presented. A series of new homoleptic all‐nitrogen and mixed oxygen/nitrogen‐coordinated Mn(II) complexes bearing the acetamidinate, formamidinate, guanidinate and ß‐ketoiminate ligands have been successfully synthesized for the first time. The specific choice of these ligand classes with changes in structure and coordination sphere and side chain variations result in significant structural differences whereby mononuclear and dinuclear complexes are formed. This was supported by density functional theory (DFT) studies. The compounds were thoroughly characterized by single crystal X‐ray diffraction, magnetic measurements, mass spectrometry and elemental analysis. To evaluate their suitability as precursors for deposition of Mn‐based materials, the thermal properties were investigated in detail. Mn(II) complexes possessing the most promising thermal properties, namely Bis(N,N'‐ditertbutylformamidinato)manganese(II) (IV) and Bis(4‐(isopropylamino)pent‐3‐en‐2‐onato)manganese(II) (ßIII) were used in reactivity studies with DFT to explore their interaction with oxidizing co‐reactants such as oxygen and water which will guide future CVD and ALD process development. [ABSTRACT FROM AUTHOR]

Hydrogen has received widespread attention as a clean future energy source. However, the key challenge to enable hydrogen as an energy vector is its storage. When comparing the various hydrogen storage methodologies, solid hydrogen storage using metal hydrides is quite attractive due to its high Volumatic energy density and high safety. In this review, we comprehensively discuss the critical importance of structural optimization, such as increasing porosity, for magnesium-based hydrogen storage materials. This aspect has been inadequately addressed and incompletely covered in previous works. Specifically, we present the hydrogen storage mechanisms by solid materials, particularly metal materials, along with their kinetic and thermodynamic principles. Additionally, synthesis methods of these materials using ball milling, thin film deposition, and direct current plasma technology are systematically classified and described. Performance improvements of Mg-based alloys or composites through catalysis, alloying and nanosizing were screened and concluded. Finally, porous-structure based improvements for Mg-based materials are emphasized, including Mg porous films, Mg metal-organic framework sand Mg-based nanoconfined materials. This study concludes that a bio-inspired technique for creating porous magnesium skeletons shows significant potential and advantages. Additionally, a casting method incorporating ultrasound is identified as an efficient solution for large-scale production. These technological innovations can replace expensive rare earth elements while achieving similar effects. • Mg-based materials store hydrogen but thermodynamic and kinetics problems exist. • Porous structure has favourable mass and heat transfer capabilities. • Synergy of Mg-based materials and porous structure shows huge potential. • Major challenges are severe processing conditions and high costs. [ABSTRACT FROM AUTHOR]

The structural, surface, and upconversion (UC) luminescence properties of Y2O3:Ho3+,Yb3+ films grown by pulsed laser deposition, for different numbers of laser pulses, were studied. The crystallinity, surface, and UC luminescence properties of the thin films were found to be highly dependent on the number of laser pulses. The X-ray powder diffraction analysis revealed that Y2O3:Ho3+,Yb3+ films were formed in a cubic structure phase with an Ia 3 ¯ space group. The thicknesses of the films were estimated by using cross-sectional scanning electron microscopy, depth profiles using X-ray photoelectron spectroscopy (XPS), and the Swanepoel method. The high-resolution XPS was used to determine the chemical composition and oxidation states of the prepared films. The UC emissions were observed at 538, 550, 666, and 756 nm, assigned to the 5F4 → 5I8, 5S2 → 5I8, 5F5 → 5I8, and 5S2 → 5I7 transitions of the Ho3+ ions. The power dependence measurements confirmed the involvement of a two-photon process in the UC process. The color purity estimated from the Commission International de I'Eclairage coordinates confirmed strong green UC emission. The results suggested that the Y2O3:Ho3+,Yb3+ UC transparent films are good candidates for various applications, including solar cell applications. [ABSTRACT FROM AUTHOR]

The use of magnetic garnets in new technologies such as spintronic devices requires fine-structured thin films. Classical fabrication techniques for these materials, typically physical vapor deposition methods, lead to excellent magnetic behavior. However, availability and scalability for potential applications are well restricted. In this study, we propose an innovative approach to fabricating Yttrium Iron Garnet thin films with precise thickness control achieved through iterative layer deposition via a chemical synthesis route. Remarkably, the iterative deposition process results in films exhibiting exceptional crystallinity. Magnetic characterization provides saturation magnetization and coercivity values on par with those reported in literature, summed to narrow ferromagnetic resonance lines. Therefore, in this work we demonstrate the viability of polymer assisted deposition as a promising alternative thinking about scalability to conventional deposition techniques for this material. Notably, our findings reveal energy conversion efficiencies comparable to those achieved with materials synthesized via physical vapor deposition methods. [ABSTRACT FROM AUTHOR]

Complex plasma widely exists in thin film deposition, material surface modification, and waste gas treatment in industrial plasma processes. During complex plasma discharge, the configuration, distribution, and size of particles, as well as the discharge glow, strongly depend on discharge parameters. However, traditional manual diagnosis methods for recognizing discharge parameters from discharge images are complicated to operate with low accuracy, time-consuming and high requirement of instruments. To solve these problems, by combining the two mechanisms of attention mechanism (strengthening the extraction of the channel feature) and shortcut connection (enabling the input information to be directly transmitted to deep networks and avoiding the disappearance or explosion of gradients), the network of squeeze and excitation convolution with shortcut (SECS) for complex plasma image recognition is proposed to effectively improve the model performance. The results show that the accuracy, precision, recall and F1-Score of our model are superior to other models in complex plasma image recognition, and the recognition accuracy reaches 97.38%. Moreover, the recognition accuracy for the Flowers and Chest X-ray publicly available data sets reaches 97.85% and 98.65%, respectively, and our model has robustness. This study shows that the proposed model provides a new method for the diagnosis of complex plasma images and also provides technical support for the application of plasma in industrial production. [ABSTRACT FROM AUTHOR]

Several thin film deposition techniques for oxide semiconducting materials have been developed. In this study, we employed an innovative technique known as chemical wet and dry (CWD) technique to deposit undoped SnO2 thin films on soda lime glass (SLG) and quartz substrates. This approach is an upgraded variant of the dip-coating process, involving controlled substrate withdrawal and in situ annealing in an inert gas atmosphere, ensuring uniform thickness control and contamination-free coating. The presence of a well-made undoped SnO2 thin film on SLG and quartz substrates was confirmed using grazing incidence x-ray diffraction (GIXRD). The films exhibit a mixed state of crystalline and amorphous nature, characterized by the presence of broad, strong peaks, suggesting Debye–Scherrer broadening. Furthermore, field emission scanning electron microscopy (FE-SEM) examinations showed an even distribution of particles on the film's surface, with particle sizes measuring between 10.58 nm and 9.17 nm. Fourier transform infrared (FT-IR) spectroscopy was utilized to detect functional groups within the film. This determination was substantiated by energy-dispersive x-ray spectroscopy (EDAX) analysis, confirming the film's composition. Optical investigations revealed that the films deposited on both SLG and quartz substrates possess remarkable transparency, exceeding 70% in the visible spectrum. The bandgap values range from 3.05 eV to 3.02 eV for SnO2 thin films deposited on SLG and quartz substrates, respectively. The variations in Hall mobilities, attributed to the impact of grain size, have been recognized, confirming the material's n-type characteristics as confirmed by Hall effect assessments. These prepared samples show promising prospects for use in forthcoming transparent conductive and optoelectronic devices, based on the aforementioned data and discoveries. [ABSTRACT FROM AUTHOR]

In conventional designs, sensory systems are segregated from memory and computing units. The conversion and transmission of data from analog sensing domains to digital storage result in inefficient power utilization and increased latency. Here, a multifunctional memristor capable of detecting gamma radiation while also serving as a data storage device and an artificial synapse is reported. Large‐scale integration of oxide‐based memristors for artificial neural networks faces major challenges due to the sneak‐path current issue in crossbar arrays. Consequently, material combinations and fabrication variables significantly shape nanoscale processes, which are essential in determining resistive switching properties and functionalities. Resistive switching in AlFeO3 is studied using different electrode materials (silver (Ag), gold (Au), chromium (Cr), fluorine‐doped tin oxide, and silicon), embedding metal (Ag, Au) nanocrystals to engineer a class of tunable memories capable of functioning as selector, memory, artificial synapse, and dosimeter. Techniques like electrode engineering, nanocrystal seeding, and temperature‐dependent thin film deposition are employed to tune resistive and threshold switching functionalities. Accessing different functionalities requires changing the electrode materials or changing the synthesis conditions of the AlFeO3 resistive switching layer and are not interconvertible in the same device simultaneously. The devices emulate critical neural functions and demonstrate interconversion dynamics between short‐term and long‐term plasticity. [ABSTRACT FROM AUTHOR]

In this work, we present the design, fabrication, and automation of a customized and affordable system capable of performing the thin film deposition techniques of Dip-Coating and SILAR at room temperature. To automate the system, parts from disused equipment were reused, new pieces were fabricated through additive manufacturing, and open-source software was also utilized. The device was controlled using an Arduino UNO R3. Additionally, a graphical interface was developed in Python with the PyQt library to adjust the motion settings and transmit parameters to the Arduino via serial communication. We validated the system by fabricating layers of Cu2 O and CuO, subsequently comparing their structural and morphological properties with findings previously reported in the literature. [ABSTRACT FROM AUTHOR]

The SILAR method of thin film deposition has attracted the scientific community over the years due to its easiness, low cost, availability of room temperature deposition, and more over due to the variation in properties of thin films available by varying deposition parameters. This work is carried out in a way to comprehensively compare two ZnO thin film samples prepared from precursor media with Zinc Acetate (S1) and Zinc Chloride(S2) salts deposited by SILAR method in Perovskite Solar cell applications. The XRD, FTIR, Raman, FESEM, and UV-Visible analysis were carried out for identifying the structural, morphological, and optical quality of these samples. The role of these samples as Electron Transport Layer (ETL) in Perovskite Solar cell were identified using General purpose PhotoVoltaic Device model (GPVDM) simulation software which is well adapted for studying Solar cell architecture. It provided the output Solar cell parameters like Jsc, Voc, FF, PCE, etc and by varying the active layer and Hole Transport Layer (HTL) thicknesses, the optimized efficiency of devices with samples S1 and S2 were obtained as 21.88% and 21.96%.The results showed that SILAR-synthesized ZnO thin films could be potential candidates for ETL applications in Perovskite Solar cells. [ABSTRACT FROM AUTHOR]

2D thin films, possessing atomically thin thickness, are emerging as promising candidates for next‐generation electronic devices, due to their novel properties and high performance. In the early years, a wide variety of 2D materials are prepared using several methods (mechanical/liquid exfoliation, chemical vapor deposition, etc.). However, the limited size of 2D flakes hinders their fundamental research and device applications, and hence the effective large‐scale preparation of 2D films is still challenging. Recently, pulsed laser deposition (PLD) has appeared to be an impactful method for wafer‐scale growth of 2D films, owing to target‐maintained stoichiometry, high growth rate, and efficiency. In this review, the recent advances on the PLD preparation of 2D films are summarized, including the growth mechanisms, strategies, and materials classification. First, efficacious strategies of PLD growth are highlighted. Then, the growth, characterization, and device applications of various 2D films are presented, such as graphene, h‐BN, MoS2, BP, oxide, perovskite, semi‐metal, etc. Finally, the potential challenges and further research directions of PLD technique is envisioned. [ABSTRACT FROM AUTHOR]

Online inspection is one of the most critical processes of quality control in semiconductor manufacturing. The physical inspection methods for wafers are time-consuming and unable to achieve wafer level metrology. In order to improve production efficiency and expand inspection coverage, virtual metrology (VM) methods have recently received widespread attention; they utilize process parameters to estimate wafer metrology results. However, due to process drift and other reasons, the process information contained in real-time signal data (RTS data) used for VM modeling in industrial production is insufficient. This work proposed a hierarchical modeling method for machine learning-based virtual wafer metrology, leveraging RTS and post-process quality characteristics. The hierarchical model consists of an multiway principle analysis (MPCA) sub-model for RTS feature extracting and two separate long short-term memory (LSTM) networks for wafer-to-wafer dynamics in RTS and quality characteristics, respectively. A case study on the thickness VM of chemical vapor deposition thin film is conducted, and the proposed method has achieved better results than other methods in comparison. [ABSTRACT FROM AUTHOR]

Thin‐film deposition of fluids is ubiquitous in a wide range of engineering and biological applications, such as surface coating, polymer processing, and biomedical device fabrication. While the thin viscous film deposition in Newtonian fluids has been extensively investigated, the deposition dynamics in frequently encountered non‐Newtonian complex fluids remain elusive, with respect to predictive scaling laws for the film thickness. Here, we investigate the deposition of thin films of shear‐thinning viscoelastic fluids by the motion of a long bubble translating in a circular capillary tube. Considering the weakly elastic regime with a shear‐thinning viscosity, we provide a quantitative measurement of the film thickness with systematic experiments. We further harness the recently developed hydrodynamic lubrication theory to quantitatively rationalize our experimental observations considering the effective capillary number Cae$Ca_\mathrm{e}$ and the effective Weissenberg number Wie$Wi_\mathrm{e}$, which describe the shear‐thinning and the viscoelastic effects on the film formation, respectively. The obtained scaling law agrees reasonably well with the experimentally measured film thickness for all test fluids. Our work may potentially advance the fundamental understanding of the thin‐film deposition in a confined geometry and provide valuable engineering guidance for processes that incorporate thin‐film flows and non‐Newtonian fluids. [ABSTRACT FROM AUTHOR]

Silicon nitride (Si3N4) materials are widely used in the electronics, optoelectronics, and semiconductor industries, with Si3N4 thin films exhibiting high densities, high dielectric constants, good insulation performance, and good thermal and chemical stability. However, direct deposition of Si3N4 thin films on glass can result in considerable tensile stress and cracking. In this study, magnetron sputtering was used to deposit a Si3N4 thin film on glass, and a silicon dioxide (SiO2) thin film was introduced to reduce the Si3N4 binding force and stress. The effect of the SiO2 layer thickness on the SiO2/Si3N4 multilayered thin film was explored. The results indicated that the introduction of the SiO2 layer could improve the weak adhesion characteristics of Si3N4 thin films. Moreover, sputtering the SiO2 layer to 150 nm resulted in the highest hardness and transmittance of the SiO2/Si3N4 multilayered thin films. The findings of this study lay a solid foundation for the application of Si3N4 thin films on glass. [ABSTRACT FROM AUTHOR]

The development of cost-effective components for Proton Exchange Membrane (PEM) electrolyzers plays a crucial role in the transformation of renewable energy into hydrogen. To achieve this goal, two main issues should be addressed: reducing the Platinum Group Metal (PGM) content present on the electrodes and finding a large-scale electrode manufacturing method. Magnetron sputtering could solve these hurdles since it allows the production of highly pure thin films in a single-step process and is a well-established industrial and automated technique for thin film deposition. In this work, we have developed an ultra-low 0.1 mg cm−2 Pt loading electrode using magnetron sputtering gas aggregation method (MSGA), directly depositing the Pt nanoparticles on top of the carbon substrate, followed by a complete evaluation of the electrochemical properties of the sputtered electrode. These ultra-low Pt content electrodes have been thoroughly characterized and tested in a real electrolyzer cell. They demonstrate similar efficiency to commercial electrodes with a Pt content of 0.3 mg/cm2, achieving a 67% reduction in Pt loading. Additionally, durability tests indicate that these electrodes offer greater stability compared to their commercial counterparts. Thus, magnetron sputtering has been proven as a promising technology for manufacturing optimum high-performance electrodes at an industrial scale. [ABSTRACT FROM AUTHOR]

We report continuous wave laser-assisted evaporation (CLE), a thin film deposition technique that yields phase-pure and stoichiometric thin films of halide perovskites (HaPs) from stoichiometric HaP targets. We use methylammonium lead bromide (MAPbBr3) to demonstrate the ability to grow with CLE well-oriented and smooth thin films on various substrates. Further, we show the broader applicability of CLE by preparing films of several other 3D HaP compounds, viz., methylammonium lead iodide, formamidinium lead bromide, and a 2D one, butylammonium lead iodide. CLE is a single-source, solvent-free, room-temperature process that needs only roughing pump vacuum; it allows the deposition of hybrid organic-inorganic compound films without needing post-thermal treatment or an additional organic precursor source to yield the intended product. The resulting films are polycrystalline and highly oriented. All these features, and the fact that one stoichiometric source serves as the target, make for an attractive, potentially scalable dry deposition approach. [ABSTRACT FROM AUTHOR]

β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor with a bandgap energy of ∼ 4.8 eV and a predicted high critical electric field strength of ∼8 MV/cm, enabling promising applications in next generation high power electronics and deep ultraviolet optoelectronics. The advantages of Ga2O3 also stem from its availability of single crystal bulk native substrates synthesized from melt, and its well-controllable n-type doping from both bulk growth and thin film epitaxy. Among several thin film growth methods, metalorganic chemical vapor deposition (MOCVD) has been demonstrated as an enabling technology for developing high-quality epitaxy of Ga2O3 thin films, (AlxGa1−x)2O3 alloys, and heterostructures along various crystal orientations and with different phases. This tutorial summarizes the recent progresses in the epitaxial growth of β-Ga2O3 thin films via different growth methods, with a focus on the growth of Ga2O3 and its compositional alloys by MOCVD. The challenges for the epitaxial development of β-Ga2O3 are discussed, along with the opportunities of future works to enhance the state-of-the-art device performance based on this emerging UWBG semiconductor material system. [ABSTRACT FROM AUTHOR]

Thin film technology is significant in technological progress and modern research because it allows for the production of optoelectronic devices with improved characteristics. Because of its superior chromatic efficiency, tungsten oxide (WO3) is one of the best candidates for energy-saving applications. In this study, undoped and tin (Sn)-doped WO3 films were grown on top of WO3 seed layers directly by a facile hydrothermal route at a temperature as low as 110∘C for 24 h. The seed layers were also deposited on top of glass substrates using spray pyrolysis. The results of tin doping on the structural, optical, and morphological characteristics of the WO3:Sn films were studied. X-ray diffraction patterns show that peak intensities increase significantly by adding Sn and the films' crystallinity was improved by rising Sn content. In the visible region, the average optical transmittance is around 13% and the optical bandgap changes from 2.61 eV to 2.81 eV, by increasing the dopant amount. Finally, the room temperature photoluminescence of samples shows intense green light emissions. The results of this research can be beneficial for the fabrication and performance optimization of electrical and optical devices such as gas sensors, electrochromic devices, and photosensors. [ABSTRACT FROM AUTHOR]

Metallic delafossites, ABO2 (A = Pd or Pt), are layered oxides that are as conductive as elemental metals. The high conductivity and surface polarity make metallic delafossites fascinating electrode materials for heterostructure devices. Here, we report the successful growth of c-axis-oriented PdCoO2 thin films on Al2O3 (001) substrates by magnetron sputtering that is widely used in industries. The observation of the PdCoO2 thin films through scanning transmission electron microscopy revealed layered crystal structures. A sharp interface exhibiting a layer stacking sequence of Pd/CoO2/Al2O3 was observed clearly, similar to the interfaces obtained with other growth methods such as pulsed laser deposition and molecular beam epitaxy. This layer stacking is particularly interesting because it can induce a high work function at the interface. The in-plane resistivity of the as-grown PdCoO2 thin film was 73 μΩ cm at room temperature, which decreased to 11 μΩ cm after post-annealing. The residual resistivity ratio of the annealed thin films was approximately 2.9. The impurity phases of PdOx were observed using x-ray diffraction and scanning transmission electron microscopy. The sputtering deposition of c-axis-oriented thin films could lead to the practical application of the polar surface of PdCoO2 in semiconductor devices. [ABSTRACT FROM AUTHOR]

Over the last two decades, the low-valent compounds of group-14 elements have received significant attention in several fields of chemistry owing to their unique electronic properties. The low-valent group-14 species include tetrylenes, tetryliumylidene, tetrylones, dimetallenes and dimetallynes. These low-valent group-14 species have shown applications in various areas such as organic transformations (hydroboration, cyanosilylation, N-functionalisation of amines, and hydroamination), small molecule activation (e.g. P4, As4, CO2, CO, H2, alkene, and alkyne) and materials. This review presents an in-depth discussion on low-valent group-14 species-catalyzed reactions, including polymerization of rac-lactide, L -lactide, DL -lactide, and caprolactone, followed by their photophysical properties (phosphorescence and fluorescence), thin film deposition (atomic layer deposition and vapor phase deposition), and medicinal applications. This review concisely summarizes current developments of low-valent heavier group-14 compounds, covering synthetic methodologies, structural aspects, and their applications in various fields of chemistry. Finally, their opportunities and challenges are examined and emphasized. [ABSTRACT FROM AUTHOR]

Cadmium selenide (CdSe) quantum dots (QDs) with different size, 2.5 and 3.2 nm, were successfully deposited on mesoporous titanium dioxide (TiO2) (Degussa-P25) nanostructures by electrophoretic deposition method (EPD) at the applied voltage 100 V for 120 s deposition time. In this study, the morphology of CdSe films deposited by EPD and the performance of the film when assembled into a solar cell were investigated. From the field emission scanning electron microscopy cross-section, the thickness of the CdSe nanoparticles with size 2.5 nm films were 3.4 and 3.0 μ m for CdSe 3.2 nm nanoparticles film. The structure of 2.5 nm is denser than compare of 3.2 nm CdSe nanoparticles. From UV visible spectroscopy, the band gap calculated for 2.5 nm CdSe nanoparticles is 2.28 eV and for 3.2 nm is 2.12 eV. Photovoltaic characterization was performed under an illumination of 100 mW cm−2. A photovoltaic conversion efficiency of 1.81% was obtained for 2.5 nm CdSe and 2.1% was obtained for 3.2 nm CdSe nanoparticles. This result shows that the photovoltaic efficiency is dependent on CdSe nanoparticle size. [ABSTRACT FROM AUTHOR]

In this work, we focus on a detailed study of the role of each component layer in the multilayer structure of a magnetic tunnel junction (MTJ) as well as the analysis of the effects that the deposition parameters of the thin films have on the performance of the structure. Various techniques including atomic force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) were used to investigate the effects of deposition parameters on the surface roughness and thickness of individual layers within the MTJ structure. Furthermore, this study investigates the influence of thin films thickness on the magnetoresistive properties of the MTJ structure, focusing on the free ferromagnetic layer and the barrier layer (MgO). Through systematic analysis and optimization of the deposition parameters, this study demonstrates a significant improvement in the tunnel magnetoresistance (TMR) of the MTJ structure of 10% on average, highlighting the importance of precise control over thin films properties for enhancing device performance. [ABSTRACT FROM AUTHOR]

This research presents a novel method for the fabrication of mercapto reduced graphene oxide (m-RGO) Langmuir–Blodgett (LB) films without the need for specialized equipment. The conventional LB technique offers precise control over the deposition of thin films onto solid substrates, but its reliance on sophisticated instrumentation limits its accessibility. In this study, we demonstrate a simplified approach that circumvents the necessity for such equipment, thereby democratizing the production of m-RGO LB films. Thiolation of reduced graphene oxide (rGO) imparts enhanced stability and functionality to the resulting films, rendering them suitable for a wide range of applications in surface engineering, sensing, and catalysis. The fabricated m-RGO LB films exhibit favorable morphological, structural, and surface properties, as characterized by various analytical techniques including scanning electron microscopy (SEM), X-ray diffraction (XRD), and Fourier-transform infrared spectroscopy (FTIR). Furthermore, the performance of the m-RGO LB films is evaluated in terms of their surface wettability, electrochemical behavior, and chemical reactivity. The equipment-free fabrication approach presented herein offers a cost-effective and scalable route for the production of functionalized graphene-based thin films, thus broadening the scope for their utilization in diverse technological applications. [ABSTRACT FROM AUTHOR]

The combination of TiO2 and Nb2O5 in thin films has proven promising for preventing the corrosion of AISI 304. The thin films are developed using sol–gel and dip‐coating techniques, followed by heat treatment. Morphological and X‐ray diffraction analyses indicate a predominant anatase phase in TiO2, and isomorphic substitution of up to 20% Nb occurs in the thin‐film composition. Phase segregation above 30% is observed. Electrochemical tests are conducted in a 2 mol L−1 HCl solution. Scanning electron microscopy reveals satisfactory thin film deposition on AISI 304 but shows the presence of regions with discontinuities. Polarization curves show a corrosion current of 128.72 μA for pure AISI 304, an average corrosion current of 0.34 μA for thin films, and an average of 6.44 μA for films with discontinuities. This significant reduction in current demonstrates the efficiency of the corrosion protection of the film at the studied concentrations because of the high corrosion inhibition percentages. Electrochemical impedance spectroscopy results suggest a high charge transfer resistance, indicating a lower corrosion rate in xTiO2 the yNb2O5 films compared to uncoated AISI 304. [ABSTRACT FROM AUTHOR]

Anti reflection coating with high hardness on the OLED display surface was studied to improve the wear resistance and visibility of OLED. However, the high residual stress inside the multilayer thin film configuration of anti reflection coating has been a problem and the improvement is necessary. In this study, the residual stress and optical properties variation on various deposition conditions on the thin film were investigated. In addition, we suggested new coating structure using nanocomposites to overcome the residual stress of films. [ABSTRACT FROM AUTHOR]

The TiN thin film is considered a promising electrode layer for 3D capacitors. In this study, TiN thin films were prepared on Si substrates using atomic layer deposition (ALD) at various temperatures from 375 °C to 475 °C. The crystallization behavior, microstructure, and conductance properties of those TiN thin films were investigated. The resistivity of TiN thin films deposited on Si wafers can reach as low as 128 μΩ·cm. TiN thin films showed lower resistivity and worse uniformity with the deposition temperature increasing. In addition, the aging of TiN thin films may weaken the device performance. Optimized deposition parameters were found and full-coverage deposition of thin films on the wall of deep holes with an aspect ratio of approximately 14 has been successfully achieved. The results would be a good reference for the development of 3D capacitors and other microelectronics components. [ABSTRACT FROM AUTHOR]

A low-cost spin coater with a wireless remote system that can deposit thin films of uniform thickness and quality at a significantly lower cost than traditional methods. The system consists of three main parts, a motorized spindle, a spin-coating head, and a control system connected to the network. The mechanical design on the mechanical part, spin coater system design with ESP32, and implementation of wireless control through visual basic. The network-enabled control system allows for real-time monitoring and adjustment of the deposition process, which can improve efficiency and reproducibility. This low-cost spin coating system represents a promising solution for organizations seeking to access thin film deposition technology at a fraction of the cost of traditional systems. By integrating wireless IoT control into low-cost spin coaters, the impact of this technology on coating uniformity will provide valuable insights for future advancements in this field. [ABSTRACT FROM AUTHOR]

This study focuses on investigating a potential method for depositing zinc sulfide (ZnS), in thin film form at room temperature. A facile and effective approach was employed in this study, wherein a suspension of ZnS powder in methanol was applied onto flexible plastic substrates using a spray deposition method. Structural analysis of the resulting films revealed a broad X-ray diffraction peak along the (100) plane, indicating the presence of nanoscale crystallites. The band gap of the ZnS films was determined to be 3.78 eV. Furthermore, the films exhibited photo luminescence emission centered at a wavelength of 410 nm, which corresponds to the blue edge of the chromaticity diagram. [ABSTRACT FROM AUTHOR]

Injection of precursor molecules into a plasma often results in particle generation or deposition in the source, compromising film quality and plasma operation. We present here a study of ion chemistry and ionic film deposition from hexamethyldisilane (HMDS) using a novel device utilizing vacuum ultraviolet (VUV)‐radiation from a remote atmospheric plasma. Infrared spectroscopy showed that SiO2 ${\text{SiO}}_{2}$‐like films were obtained at the lowest admixture, where impurities are more important and VUV‐photons reach the substrate, while only slightly oxidized films were deposited at high admixtures. Photoionization mainly forms the monomer ion due to collisional stabilization and possibly slow polymerization reactions as found by ion mass spectrometry. The more detailed photochemistry of HMDS‐related ions is discussed based on mass spectra for different admixtures. [ABSTRACT FROM AUTHOR]

The development of industrially relevant deposition processes for efficient, stable, and inexpensive charge extracting layers is crucial for the commercialization of perovskite solar cells (PSCs). This work demonstrates, for the first time, the deposition of copper thiocyanate (CuSCN) as a low‐cost and reliable hole‐transport layer using slot‐die coating. Methyl ethyl sulfide is thereby used as an asymmetric cosolvent to significantly increase the solubility of CuSCN in the utilized slot‐die ink compared to traditional pure diethyl sulfide‐based solutions. Optimized CuSCN inks allow for the deposition of CuSCN layers on 5 × 10 cm2 substrates with a wide range of thicknesses. Multidimensional imaging photoluminescence techniques are used to investigate the uniformity of the CuSCN thin films deposition as well as the influence of the solvent on charge losses. Finally, the CuSCN slot‐die deposition is integrated into a fully upscalable PSC fabrication process showing 19.1% power conversion efficiency for small laboratory cells and 14.7% for 9 cm2 minimodules. Furthermore, semitransparent minimodules retain 80% of their initial efficiency after 500 h of constant illumination. [ABSTRACT FROM AUTHOR]