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GaN grown via oxide vapor phase epitaxy (OVPE-GaN) can produce free-standing substrates with ultra-low resistivity because of the high doping concentration of oxygen. The bulk growth of OVPE-GaN is hindered by polycrystals generated during long-term growth. We have previously reported that thicker films can be grown by reducing the partial pressure of water vapor in the growth atmosphere with CH4. However, as CH4 is a dopant of carbon, a compensating acceptor, its addition may increase electrical resistance. In this study, we further investigated the effect of reducing water vapor partial pressure on polycrystals by combining Ga2O production (reaction of Ga and water vapor: a Ga–H2O system), which can reduce water vapor, with CH4 addition. However, CH4 addition to the Ga–H2O system increased polycrystal generation, possibly owing to the thermal decomposition of excess CH4. The properties of OVPE-GaN with CH4 addition were also evaluated. Although the CH4 addition resulted in high carbon doping, the carbon-doped OVPE-GaN maintained low resistivity. This is because the OVPE method involves three-dimensional growth with growth pits, and the growth pits leave behind low-resistivity high-oxygen-concentration regions. As the resistivity remains low even when CH4 is added in the OVPE method, both polycrystallization suppression and low resistivity can be achieved by selecting an appropriate CH4 flow rate. [ABSTRACT FROM AUTHOR]

It is crucial to better understand the magnetization reversal process between soft and hard magnets and to achieve a high maximum energy product in thick composite multilayers. In this study, we find that the exchange interactions dominate in soft–hard-magnetic composite bilayers, while dipole interactions are predominant in soft–hard-magnetic composite trilayers. Based on the first-order reversal curve, magnetization reversal models are developed for both the thick composite bilayer and trilayer. Dipole interactions play an important role in the long range, resulting in higher coercivity and remanence in the thick trilayer. A multilayer in a stacked trilayer structure is achieved, which is composed of thick films with a perpendicular magnetic anisotropy at a thickness of up to 16 μm. The enhanced dipole interactions lead to a remanent polarization of 1 T and a maximum energy product of 22.5 MGOe. This work contributes to the preparation of thick films with a high maximum energy product for applications in magnetic microelectromechanical systems. [ABSTRACT FROM AUTHOR]

Scanning spreading resistance microscopy (SSRM) measurements were performed on GaAs thick films grown by hydride vapor phase epitaxy technology under different growth conditions to evaluate their carrier concentrations. For this purpose, a calibration curve was established based on a multilayer staircase structure grown by molecular beam epitaxy. The dopant calibration range measured by secondary ion mass spectrometry is from 5 × 1016 to 1019 cm−3. An abnormal phenomenon in the calibration process was explained by taking into account the parasitic parallel resistance of the calibration samples. Finally, the calibration curve was used to quantitatively analyze the carriers inside the Zn doping p-type GaAs film from 4 × 1016 to 1018 cm−3 range. We demonstrate here the applicability of SSRM to the in-depth analysis of thick epilayers, providing new inputs for the control of thick film technologies. [ABSTRACT FROM AUTHOR]

In this work, we present the investigation of the magnetotransport properties of a capped SnTe film, grown by molecular beam epitaxy, using Shubnikov–de Haas oscillations for the detection of Dirac fermions. The cap layer used was a 10 nm thick Sn0.98Eu0.02Te film, which can also contribute to the transport such that it is mandatory to isolate its contribution from the electrical transport measured in the sample. To separate the contribution from both layers, photoconductivity measurements were performed. A detailed analysis of the Shubnikov–de Haas oscillations is carried out using theoretical expressions and building the Landau-level indexation. We found that Dirac fermions are detected in the SnTe layer, while the cap layer contributes with trivial fermions, protecting SnTe against deterioration due to exposure to the atmosphere. [ABSTRACT FROM AUTHOR]

Achieving the formation of target open crystalline lattices from colloidal particles is of paramount importance for their potential application in photonics. Examples of such desired structures are the diamond, tetrastack, and pyrochlore lattices. Here, we demonstrate that the self-assembly of tetravalent patchy particles results in the selective formation of cubic tetrastack crystals, both in the bulk and in the systems subjected to external fields exerted by the solid substrate. It is demonstrated that the presence of an external field allows for the formation of well-defined single crystals with a low density of defects. Moreover, depending on the strength of the applied external field, the mechanism of epitaxial growth changes. For weakly attractive external fields, the crystallization occurs in a similar manner as in the bulk, since the fluid does not wet the substrate. Nonetheless, the formed crystal is considerably better ordered than the crystals formed in bulk, since the surface induces the ordering in the first layer. On the other hand, it is demonstrated that the formation of well-ordered cubic tetrastack crystals is considerably enhanced by the increase in external field strength, and the formation of the thick crystalline film occurs via a series of layering transitions. [ABSTRACT FROM AUTHOR]

Growth of GeSn films directly on Si substrates is desirable for integrated photonics applications since the absence of an intervening buffer layer simplifies device fabrication. Here, we analyze the microstructure of two GeSn films grown directly on (001) Si by remote plasma-enhanced chemical vapor deposition (RPECVD): a 1000 nm thick film containing 3% Sn and a 600 nm thick, 10% Sn film. Both samples consist of an epitaxial layer with nano twins below a composite layer containing nanocrystalline and amorphous. The epilayer has uniform composition, while the nanocrystalline material has higher levels of Sn than the surrounding amorphous matrix. These two layers are separated by an interface with a distinct, hilly morphology. The transition between the two layers is facilitated by formation of densely populated (111)-coupled nano twins. The 10% Sn sample exhibits a significantly thinner epilayer than the one with 3% Sn. The in-plane lattice mismatch between GeSn and Si induces a quasi-periodic misfit dislocation network along the interface. Film growth initiates at the interface through formation of an atomic-scale interlayer with reduced Sn content, followed by the higher Sn content epitaxial layer. A corrugated surface containing a high density of twins with elevated levels of Sn at the peaks begins forming at a critical thickness. Subsequent epitaxial breakdown at the peaks produces a composite containing high levels of Sn nanocrystalline embedded in lower level of Sn amorphous. The observed microstructure and film evolution provide valuable insight into the growth mechanism that can be used to tune the RPECVD process for improved film quality. [ABSTRACT FROM AUTHOR]

Quantum memories facilitate the storage and retrieval of quantum information for on-chip and long-distance quantum communications. Thus, they play a critical role in quantum information processing and have diverse applications ranging from aerospace to medical imaging fields. Bulk acoustic wave (BAW) phonons are attractive candidates for quantum memories because of their long lifetimes and high operating frequencies. In this study, we establish a modeling approach to design hybrid magnonic high-overtone bulk acoustic wave resonator (HBAR) structures for high-density, long-lasting quantum memories, and efficient quantum transduction devices. We illustrate the approach by investigating a hybrid magnonic system, consisting of a gadolinium iron garnet (GGG) thick film and a patterned yttrium iron garnet (YIG) thin film. The BAW phonons are excited in GGG thick film via coupling with magnons in the YIG thin film. We present theoretical and numerical analyses of the diffraction-limited BAW phonon lifetimes, modeshapes, and magnon–phonon coupling strengths in YIG/GGG planar and confocal HBAR (CHBAR) structures. We utilize Fourier beam propagation and Hankel transform eigenvalue problem methods and compare the two methods. We discuss strategies to improve the phonon lifetimes in the diffraction-limited regime, since increased lifetimes have direct implications on the storage times of quantum states for quantum memory applications. We find that ultra-high cooperativities and phonon lifetimes on the order of ∼ 10 5 and ∼ 10 milliseconds, respectively, could be achieved using a CHBAR structure with 10 μ m YIG lateral area. Additionally, high integration density of on-chip memory or transduction centers is naturally desired for high-density memory or transduction devices. The proposed CHBAR structure will offer more than 100-fold improvement of integration density relative to a recently demonstrated YIG/GGG device. Our results will have direct applicability for devices operating in the cryogenic or milliKelvin regimes. For example, our study will inform the design of HBAR devices that could couple with superconducting qubits for promising quantum information platforms. [ABSTRACT FROM AUTHOR]

We extend the force-level elastically collective nonlinear Langevin equation theory to treat the spatial gradients of the alpha relaxation time and glass transition temperature, and the corresponding film-averaged quantities, to the geometrically asymmetric case of finite thickness supported films with variable fluid–substrate coupling. The latter typically nonuniversally slows down motion near the solid–liquid interface as modeled via modification of the surface dynamic free energy caging constraints that are spatially transferred into the film and which compete with the accelerated relaxation gradient induced by the vapor interface. Quantitative applications to the foundational hard sphere fluid and a polymer melt are presented. The strength of the effective fluid–substrate coupling has very large consequences for the dynamical gradients and film-averaged quantities in a film thickness and thermodynamic state dependent manner. The interference of the dynamical gradients of opposite nature emanating from the vapor and solid interfaces is determined, including the conditions for the disappearance of a bulk-like region in the film center. The relative importance of surface-induced modification of local caging vs the generic truncation of the long range collective elastic component of the activation barrier is studied. The conditions for the accuracy and failure of a simple superposition approximation for dynamical gradients in thin films are also determined. The emergence of near substrate dead layers, large gradient effects on film-averaged response functions, and a weak non-monotonic evolution of dynamic gradients in thick and cold films are briefly discussed. The connection of our theoretical results to simulations and experiments is briefly discussed, as is the extension to treat more complex glass-forming systems under nanoconfinement. [ABSTRACT FROM AUTHOR]

Magnetic garnet thin films exhibiting perpendicular magnetic anisotropy (PMA) and ultra-low damping have recently been explored for applications in magnonics and spintronics. Here, we present a systematic study of PMA and magnetic damping in bismuth-substituted yttrium iron garnet (Bi-YIG) films grown on sGGG (111) substrates by pulsed laser deposition. Films with thicknesses ranging from 5 to 160 nm are investigated. Structural characterization using x-ray diffraction and reciprocal space mapping demonstrates the pseudomorphic growth of the films. The films exhibit perpendicular magnetic anisotropy up to 160 nm thickness, with the zero-magnetic field state changing from fully saturated for low thicknesses to a dense magnetic stripe pattern for thicker films. The films show a ferromagnetic resonance (FMR) linewidth of 100–200 MHz with a Gilbert damping constant of the order of 4 × 10 − 3 . The broad FMR linewidth is caused by inhomogeneities of magnetic properties on micrometer length scales. [ABSTRACT FROM AUTHOR]

Nb 3 Sn and V 3 Si thin films are promising candidates for the next generation of superconducting radio-frequency (SRF) cavities. However, sputtered films often suffer from stoichiometry and strain issues. This exploratory study investigates the structural and chemical effects of thermal annealing, both i n − s i t u and post-sputtering, on DC-sputtered Nb 3 Sn and V 3 Si films with varying thicknesses, deposited on Nb or Cu substrates. Building upon our initial studies [Howard et al., Proceedings of the SRF'21, East Lansing, MI (JACoW, 2021), p. 82.], we provide fundamental insights into recrystallization, phase changes, and the issues of stoichiometry and strain. Through annealing at 950 ° C, we have successfully enabled the recrystallization of 100 nm thin Nb 3 Sn films on Nb substrates, yielding stoichiometric and strain-free grains. For 2 μ m thick films, elevated annealing temperatures led to the removal of internal strain and a slight increase in grain size. Moreover, annealing enabled a phase transformation from an unstable to a stable structure in V 3 Si films, while we observed significant Sn loss in 2 μ m thick Nb 3 Sn films after high-temperature annealing. Similarly, annealing films atop Cu substrates resulted in notable Sn and Si loss due to the generation of Cu–Sn and Cu–Si phases, followed by evaporation. These results encourage us to refine our process to obtain high-quality sputtered films for SRF use. [ABSTRACT FROM AUTHOR]

Wrinkling, creasing, and folding are frequent phenomena encountered in biological and man-made bilayers made by thin films bonded to thicker and softer substrates often containing fibers. Paradigmatic examples of the latter are the skin, the brain, and arterial walls, for which wiggly cross sections are detected. Although experimental investigations on corrugation of these and analog bilayers would greatly benefit from scaling laws for prompt comparison of the wrinkling features, neither are they available nor have systematic approaches yielding to such laws ever been provided before. This gap is filled in this paper, where a uniaxially compressed bilayer formed by a thin elastic film bonded on a hyperelastic fiber-reinforced substrate is considered. The force balance at the film–substrate interface is here analytically and numerically investigated for highly mismatched film–substrates. The onset of wrinkling is then characterized in terms of both the critical strain and its corresponding wavenumber. Inspired by the asymptotic laws available for neo-Hookean bilayers, the paper then provides a systematic way to achieve novel scaling laws for the wrinkling features for fiber-reinforced highly mismatched hyperelastic bilayers. Such novel scaling laws shed light on the key contributions defining the response of the bilayer, as it is characterized by a fiber-induced complex anisotropy. Results are compared with finite element analyses and also with outcomes of both existing linear models and available ad hoc scalings. Furthermore, the amplitude, the global maximum and minimum of ruga occurring under increasing compression spanning the wrinkling, period doubling, and folding regimes are also obtained. [ABSTRACT FROM AUTHOR]

Proton exchange membrane fuel cells (PEMFCs), which use hydrogen as fuel, present an eco-friendly alternative to internal combustion engines (ICEs) for powering low-to-heavy-duty vehicles and various devices. Despite their promise, PEMFCs must meet strict cost, performance, and durability standards to reach their full potential. A key challenge lies in optimizing the electrode, where a thin ionomer layer is responsible for proton conduction and binding catalyst particles to the electrode. Enhancing ion transport within these sub-μm thick films is critical to improving the oxygen reduction reaction (ORR) at the cathodes of PEMFCs. For the past 15 years, our research has targeted this limitation through a comprehensive "Unravel – Engineer – Design" approach. We first unraveled the behavior of ionomers, gaining deeper insights into both the average and distributed proton conduction properties within sub-μm thick films and at interfaces that mimic catalyst binder layers. Next, we engineered ionomer–substrate interfaces to gain control over interfacial makeup and boost proton conductivity, essential for PEMFC efficiency. Finally, we designed novel nature-derived or nature-inspired, fluorine-free ionomers to tackle the ion transport limitations seen in state-of-the-art ionomers under thin-film confinement. Some of these ionomers even pave the way to address cost and sustainability challenges in PEMFC materials. This feature article highlights our contributions and their importance in advancing PEMFCs and other sustainable energy conversion and storage technologies. [ABSTRACT FROM AUTHOR]

The electrophysical properties of nanostructured MgAl2O4 ceramics sintered at 1300 °C for 5 h, as well as thick films were obtained and investigated. The study of adsorption-desorption cycles was carried out after sintering and aging test. It is shown that ceramic has a sensitivity to humidity in the range of 25–95% with minimal hysteresis of the characteristic in adsorption-desorption cycles, which can be eliminated after the aging test. Thick films based on it are characterized by hysteresis and loss of sensitivity at low values of relative humidity, which is caused by the clogging of small nanopores. [ABSTRACT FROM AUTHOR]

(1-x) (Na 0.2 K 0.8)NbO 3 -xSrTiO 3 [(1-x) (N 0.2 K 0.8)N-xST] ceramics with a homogeneous perovskite structure were well-sintered in the range of 1080–1160 °C. The 0.9(N 0.2 K 0.8)N-0.1ST ceramic was found to have a temperature-stable dielectric constant (ε r) that complies with the X9R multilayer ceramic capacitor (MLCC) requirement. The temperature stability of the ε r value was also investigated for the 0.9(N 1-z K z)N-0.1ST ceramics (0.0 ≤ z ≤ 1.0). The results indicated that as z (or K+ ions) increased, the Curie temperature (T C) decreased, and its peak broadened. The broadening of the T C peak was attributed to the development of the relaxor property owing to the tilting of the NbO 6 octahedra. The 0.9(N 1-z K z)N-0.1ST ceramics (0.7 ≤ z ≤ 1.0) exhibited a temperature-independent ε r value, thus fulfilling the X9R MLCC requirement because of the broad T C peak. The MLCC fabricated from 0.9(N 0.2 K 0.8)N-0.1ST thick films complied with the X9R MLCC requirement with excellent capacitance stability under the supplied electric field. Hence, 0.9(N 1-z K z)N-0.1ST ceramics (0.7 ≤ z ≤ 1.0) are good candidates for X9R MLCCs. [ABSTRACT FROM AUTHOR]

This study investigates the potential of hydrolyzed bacterial cellulose (hBC) for UV radiation protection. BC membranes are produced under static conditions by Komagataeibacter sucrofermentans, purified, mechanically shredded, and hydrolyzed. As a result, hBC exhibits colloidal properties at various concentrations (0.34 – 11 mg ml−1). With a water-holding capacity of 89.1% ± 0.341, hBC forms a 3.65 μm thick transparent film with an approximate density of 7 μg per mm2. In Scanning Electron Microscopy (SEM) analysis, the lengths of filamentous BC particles were between 50 and 300 nm, while the lengths of rod-like nanocrystalline cellulose were between 400 and 1500 µm. According to dynamic light scattering (DLS) result, 88% of the particles were approximately 1 µm long. The zeta potential was −25.13 ± 0.65 mV, hBC showed thixotropic behaviour, and its crystallinity was 92. hBC and its films exhibited barrier properties to UV radiation (190–400 nm). The highest UV absorbance (almost 100%) for all UV regions (UV-A, UV-B and UV-C) of hBC in colloidal form is at a concentration of 11 mg ml−1. At most, the UV transmittance of all UV regions of the hBC films was 16%. Sun protective factor (SPF) values of colloidal and film forms of the hBC at a concentration of 11 mg ml−1 and 212 µg/mm2 were 29 and 12, respectively. hBC was not cytotoxic on mouse fibroblast L929 and human keratinocyte (HaCaT) cells. In conclusion, hBC can be an alternative UV radiation protector and thickening agent. This study represents the first report on the UV barrier property of hBC for aqueous formulations. [ABSTRACT FROM AUTHOR]

The realization of large‐area high‐quality perovskite thick films under an atmospheric environment without humidity control is confronting an urgent challenge for the applications in X‐ray detection and imaging. A spray‐coating method with air as the gas carrier is employed to achieve large‐area perovskite thick films for X‐ray flat‐panel detection applications. To further improve the quality of the thick films, the 10 µm‐thick CsPbIBr2 films with (100)‐preferred orientation, low trap density (7.1 × 1012 cm−3) and high resistivity corresponding to low dark current (3.2 × 10−9 A) are prepared via dual‐additive‐assisted (NH4SCN and L‐α‐phosphatidylcholine (LP)) solution strategy under atmospheric environment with relative humidity of 60% (60% RH). Thus, the metal‐semiconductor‐metal‐structured (Au/CsPbIBr2/Au) transverse X‐ray detection device under 40 KeV X‐ray irradiation possesses a high sensitivity up to 1420 µC Gyair−1 cm−2 under a weak electric field of 18 V mm−1 and a low dose rate of 3.3 µGyair s−1 that is lower than a dose rate of ≈5.5 µGyair s−1 required for routine medical diagnosis. Strikingly, the unencapsulated device maintains 80% (1120 µC Gyair−1 cm−2) of the original sensitivity after 1000 h under the atmospheric environment with 45–55% RH. These results pave the way for the practical applications of perovskite thick films in X‐ray medical detection and imaging. [ABSTRACT FROM AUTHOR]

Self‐powered near‐infrared (NIR) photodetectors are essential for surveillance systems, sensing in IoT electronics, facial recognition, health monitoring, optical communication networks, night vision, and biomedical imaging. However, silicon commercial detectors need external power to operate and cooling to suppress large dark currents. This work demonstrates a new class of CMOS‐compatible self‐powered NIR photodetector based on ferroelectric 5‐nm thick ZrO2 films which do not require cooling and therefore have two key advantages over Si, and at the same time have comparable performance metrics. At room‐temperature, under 940 nm wavelength illumination (1.4 mW cm−2 power density, 10 Hz repetition rate), and without any power applied, fast rise and fall times of ≈2 and 4 µs, respectively, are achieved in Al/Si/SiOx/ZrO2/ITO devices, along with responsivity, detectivity and sensitivity values of up to ≈3.4 A W−1, 1.2 × 1010 Jones and 4.2 × 103, respectively, far exceeding all other emerging self‐powered systems. Furthermore, dual‐band NIR detection is shown for different NIR wavelengths, proof‐of‐concept feasibility being demonstrated for the smart identification of NIR targets. Therefore, it is demonstrated, for the first time, that coupling together the pyroelectric effect, the photovoltaic effect, and the ferroelectric effect is a novel method to significantly enhance the performance of CMOS‐compatible ZrO2‐based self‐powered photodetectors in the NIR region. [ABSTRACT FROM AUTHOR]

Bifacial perovskite solar cells (PSCs) possess a dual light‐absorbing structure, which enables higher power output at lower additional costs. However, the replacement of metal electrodes with transparent ones leads to serious light loss, necessitating a thicker perovskite layer to compensate for this drawback. In this study, the impact of different rubidium halide (RbCl, RbBr, and RbI) additives is systematically investigated on precursor solubility and the quality of micron‐sized perovskite thick films prepared using a two‐step method. It is observed that RbCl exhibited the strongest interactions with PbI2, enhancing its solubility and leading to the formation of multihole PbI2 films that promote subsequent crystallization of thick perovskite film. Additionally, the RbCl‐based perovskite film demonstrates a narrowed bandgap attributed to the formation of a‐FAPbI3. Consequently, the short‐circuit current density (Jsc) and open‐circuit voltage (Voc) in the RbCl‐based bifacial PSCs are simultaneously enhanced, and a record efficiency of 20.86% (21.04% certified) is also obtained among n‐i‐p bifacial PSCs, exhibiting an ≈80% bifaciality and a power generation density (PGD) exceeding 24 mW cm−2 with a reflectivity value of 0.2. More importantly, the optimized device does not show any performance degradation after continuous illumination under 1sun for 1000 h. [ABSTRACT FROM AUTHOR]

Interest in self-cleaning coatings is rising due to their potential to enhance comfort and quality of life in polluted urban environments, driving the search for materials with optimal physical properties. Convergent with this goal, this study investigates the wetting properties and photo-catalytic efficiency of reticulated TiO 2 layers. It shows that these properties are significantly influenced by the topographical characteristics of the TiO 2 surface, which can be precisely controlled through variations in pulverization pressure and low-temperature post-annealing treatments. Post-deposition annealing of the TiO 2 layers achieves 100 % self-cleaning efficiency for both thick and thin films, with optical transmission ranging from approximately 60 %–80 % in the visible spectrum. Additionally, the TiO 2 layers exhibited promising capabilities for eliminating pathogenic microorganisms and disinfecting surfaces. The underlying causal factors of these remarkable and technologically promising surface features are explored and discussed. [ABSTRACT FROM AUTHOR]

This work demonstrates the fabrication, characterization, and energy storage capacity of high calcium-doped strontium titanate thick films (Sr0.60Ca0.40TiO3) for the first time. The thick films were fabricated using the screen-printing technique and densified using uniaxial pressing. The effect of densification on the structural, morphological, and surface chemical compositional of the materials was studied. The densified thick film revealed a notable frequency stability of dielectric permittivity (ε′) ≈ 198 with a low dielectric loss tangent (tanδ) in the order of 10− 3 between 100 Hz and 1 MHz and was characterized by slim P-E loops signifying its paraelectric nature. A high energy recovery density (Ue) of 4.1 J/cm3 and a high energy efficiency of 96% were simultaneously reached. [ABSTRACT FROM AUTHOR]

Photon‐pair generation based on optical parametric down‐conversion has attracted for the application as a light source for quantum information. Highly efficient wavelength‐conversion devices require a polarity‐inversion structure when using nitride semiconductors. A transverse quasi‐phase‐matching (QPM) polarity‐inverted GaN bilayer channel waveguide device is suitable for efficient wavelength conversion. This study designed a cross‐section device to satisfy the modal dispersion phase‐matching condition between the TM02 mode pump light and the TM00 mode signal/idler light. Moreover, an AlN oxidation interlayer fabricates the Ga‐polar/N‐polar (+c/−c) GaN layers via metalorganic vapor‐phase epitaxy (MOVPE). A 145 nm thick film layer with a macro‐step‐free surface is grown by optimizing the −c‐GaN growth conditions and reducing the substrate off‐angle to 0.2°. Next, the AlN layer is oxidized in an electric furnace and MOVPE is used to regrow a 1500 nm thick +c‐GaN layer. A macrosteps‐free surface can be achieved by reducing the off‐angle to 0.2° and optimizing the −c‐GaN growth conditions to avoid hillock formation. These results pave the way for improving the efficiency of GaN transverse QPM wavelength‐conversion devices. [ABSTRACT FROM AUTHOR]

Integrating epitaxial BaTiO3 (BTO) with Si is essential for leveraging its ferroelectric, piezoelectric, and nonlinear optical properties in microelectronics. Recently, heterogeneous integration approaches that involve growth of BTO on ideal substrates followed by transfer to a desired substrate show promise of achieving excellent device‐quality films. However, beyond simple demonstrations of the existence of ferroelectricity, robust devices with high endurance are not yet demonstrated on Si using the latter approach. Here, using a novel two‐step approach to synthesize epitaxial BTO using pulsed laser deposition on water‐soluble Sr3Al2O6 (on SrTiO3 substrates), successful integration of high‐quality BTO capacitors on Si is demonstrated, with remanent polarisation Pr = 7 µC cm−2, coercive field Ec = 150 kV cm−1, ferroelectric and electromechanical endurance of > 106 cycles. The study further addresses the challenge of cracking and disintegration of thicker films by first transferring a large area (5 mm x 5 mm) of the templated layer of BTO (≈30 nm thick) on the desired substrate, followed by the growth of high‐quality BTO on this substrate, as revealed by high‐resolution X‐ray diffraction (HRXRD) and high‐resolution scanning transmission electron microscopy (HRSTEM) measurements. These templated Si substrates offer a versatile platform for integrating any epitaxial complex oxides with diverse functionalities onto any inorganic substrate. [ABSTRACT FROM AUTHOR]

Alumina, as a pivotal ceramic material extensively utilized in contemporary applications, the surface modification and enhancement of tribological properties are crucial. In this study, reactive magnetron sputtering was employed to deposit Ti, Si co-doped hydrogen-free (TiSi/a-C), and hydrogenated amorphous carbon films (TiSi/a-C:H) with a thickness exceeding 7 μm onto the surface of alumina ceramic substrates. Utilizing the design of the film structure, the difficulty of film-substrate adhesion was resolved by controlling the deposition time to influence the growth rate of the film, thereby enabling the reliable fabrication of thick films. The adhesion of the TiSi/a-C film exhibits the highest value, with an Lc1 value of 36.7 N. The hardness of the TiSi/a-C:H reaches a maximum of 15.2 GPa, and the hardness is closely correlated with the reaction gas utilized during its depositional process. The wear rate of amorphous carbon film decreases by 34 times compared to alumina substrate. During the dissociation of CH 4 at a high hydrogen-to-carbon ratio, more hydrogen atoms are involved in the chemical reaction. The introduction of hydrogen elevates the H/E and sp3/sp2 ratios within the film, thereby favoring the generation of low-friction surfaces and refining the tribological performance of alumina ceramics. [ABSTRACT FROM AUTHOR]

This study investigates Co 40 Fe 40 Dy 20 thin films on glass substrates with thicknesses ranging from 10 nm to 50 nm under four conditions: as-deposited, annealed at 100 °C, 200 °C, and 300 °C. X-ray diffraction (XRD) confirms film amorphousness due to limited thermal energy. Maximum low-frequency alternate-current magnetic susceptibility (χ ac) is observed at thicker films and higher annealing temperatures, with films at 300 °C showing the highest value 0.41. Annealing at 200 °C yields exceptional properties high saturation magnetization (M s) 748 emu/cm³ and low coercivity (Hc) 10 Oe, though Ms decreases at 300 °C due to thermal effects. Electrical resistivity and sheet resistance decrease with thickness and annealing, enhancing carrier transport. Transmittance (%) decreases notably with increased thickness, attributed to thickness and interface effects. Variations in surface roughness from annealing affect properties, with smoother surfaces improving carrier conductivity but reducing optical transparency. Overall, Co 40 Fe 40 Dy 20 exhibits excellent soft magnetic properties suitable for various applications. [ABSTRACT FROM AUTHOR]

In the field of modern optical computing and communication, optical bistability plays a crucial role. With a weak third-order nonlinear coefficient, low switch thresholds of optical bistability from Si-based nanophotonic structures remain a challenge. In this work, a metasurface consisting of silicon nanostrip arrays placed on the optically thick silver film is proposed. The light–matter interaction is enhanced by mirror-inducing the magnetic anapole states (MASs) and asymmetrically optimizing its silicon nanostrip. Numerical results show that the average enhancement factor (EF) of an electric field can be greatly enhanced to be 1524.8. Moreover, the optical bistability of the proposed metasurface achieves the thresholds of ION-OFF and IOFF-ON of 8.5 MW/cm2 and 7.1 MW/cm2, respectively, which is the lowest threshold when compared to the previous works based on silicon nanostructures. The angular dependance of the bistability performance is also investigated. This work facilitates the proposed hybrid metasurface in the fields of miniaturized all-optical switches and modulators, which are key components in optical computing and communication. [ABSTRACT FROM AUTHOR]

The purpose of this study was to prepare Pickering emulsions stabilized by waste jujube kernel cellulose nanocrystals (CNC) using composite essential oils (EOs) (i.e., cinnamon essential oil [CIN] combined with clove essential oil [CL]). The Pickering emulsions were blended with chitosan (CS) to generate a composite film (CS/CNC/EOs Pickering emulsions). We evaluated the mechanical properties, barrier properties, and microstructures of CS/CNC/EOs bio-based packaging films containing different concentrations of EOs. In addition, the fresh-keeping effects of the composite membranes on beef sausages were evaluated over a 12-day storage period. Notably, the EOs exhibited good compatibility with CS. With the increase in the EOs concentration, the droplet size increased, the composite films became thicker, the elongation at break decreased, the tensile strength increased, and the water vapor permeability decreased. When the composite films were used for preserving beef sausages, the antioxidant and antibacterial activity of the membranes improved as the concentration of EOs increased, effectively prolonging the shelf life of the sausages. Composite membranes with an EOs concentration of 2% exerted the best fresh-keeping effects. Overall, owing to their antioxidant and antimicrobial properties, the bio-based composite films prepared using CS/CNC/EOs Pickering emulsions demonstrated immense potential for application in the packaging of meat products. [ABSTRACT FROM AUTHOR]

We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 μm thick β-Ga2O3 films with electron concentrations in the 1015 cm−3 range and record-high room temperature Hall electron mobilities of up to 200 cm2/Vs, reaching the predicted theoretical maximum room temperature phonon scattering-limited mobility value for β-Ga2O3. Growth of the homoepitaxial films was performed on Fe-doped (010) β-Ga2O3 substrates at a growth rate of 1.9 μm/h using TEGa as the Gallium precursor. To probe the background electron concentration, an unintentionally doped film was grown with a Hall concentration of 3.43 × 1015 cm−3 and Hall mobility of 196 cm2/Vs. Growth of intentionally Si-doped films was accomplished by fixing all growth conditions and varying only the silane flow, with controllable Hall electron concentrations ranging from 4.38 × 1015 to 8.30 × 1015 cm−3 and exceptional Hall mobilities ranging from 194 to 200 cm2/Vs demonstrated. C-V measurements showed a flat charge profile with the ND+–NA− values correlating well with the Hall-measured electron concentration in the films. SIMS measurements showed the silicon atomic concentration matched the Hall electron concentration with carbon and hydrogen below detection limit in the films. The Hall, C-V, and SIMS data indicate the growth of high-quality 4.5 μm thick β-Ga2O3 films and controllable doping into the mid 1015 cm−3 range. These results demonstrate MOCVD growth of electronics grade record-high mobility, low carrier density, and thick β-Ga2O3 drift layers for next-generation vertical β-Ga2O3 power devices. [ABSTRACT FROM AUTHOR]

In this novel study, BaCe 0.9 Y 0.1 O 3– δ , BaCe 0. 9 Eu 0.1 O 3– δ , BaCe 0.9 Nd 0.1 O 3– δ , and BaCe 0.9 Dy 0.1 O 3– δ powders were synthesized by the self-combustion method and processed into thick porous films (60–70 % porosity) to investigate the water vapor sensing properties in the 400–700 °C temperature range. All samples showed a stable response value to water vapor in the whole temperature range, expressed as impedance ratio in dry and wet argon (Z dryAr / Z wetAr), and were able to detect 0.03 vol% of water vapor at 550 °C within the impedance range of 103 Ω at 100 Hz. The response values increased with the partial pressure of water and decreased with the temperature, whereas the maximal value of 3.41 reached the BaCe 0.9 Eu 0.1 O 3– δ sample at 550 °C and p (H 2 O) = 4.28 kPa. The average response time was several seconds and only slightly changed with the material type and experimental conditions. The recovery time depended on temperature and the Z dryAr / Z wetAr ratio, whereas the increase in the gas flow rate from 100 cm3/min to 200 cm3/min significantly reduced the recovery time for the BaCe 0.9 Eu 0.1 O 3– δ sample from 230 s to 55 s at 550 °C and p (H 2 O) = 2.14 kPa. All the samples exhibited stability and a high degree of reversibility after multiple exchanges of wet and dry atmospheres at different temperatures. Yet, their tendency to deteriorate in the presence of CO 2 might challenge a potential application in aggressive environments. [ABSTRACT FROM AUTHOR]

Insertion storage in battery electrodes and supercapacitive storage are typically considered to be independent phenomena and thus are dealt with in separate scientific communities. Using tailored experiments on titanium oxide thin films of various thicknesses, we demonstrate the simultaneous occurrence of both processes. For the interpretation of the entire storage profile encompassing both contributions, the (free) energies of the charge carriers in the mixed conductor and the neighboring phase are the only materials parameters required. The experimental results enable no less than a unification of insertion and supercapacitive storage, the first being dominant for thick films, the latter for thin films or negligible electronic conductivity. Therefore, the size of the storage medium and the nature of the current collecting phases can be used to tune power density versus energy density. [ABSTRACT FROM AUTHOR]

Insertion storage in battery electrodes and supercapacitive storage are typically considered to be independent phenomena and thus are dealt with in separate scientific communities. Using tailored experiments on titanium oxide thin films of various thicknesses, we demonstrate the simultaneous occurrence of both processes. For the interpretation of the entire storage profile encompassing both contributions, the (free) energies of the charge carriers in the mixed conductor and the neighboring phase are the only materials parameters required. The experimental results enable no less than a unification of insertion and supercapacitive storage, the first being dominant for thick films, the latter for thin films or negligible electronic conductivity. Therefore, the size of the storage medium and the nature of the current collecting phases can be used to tune power density versus energy density. [ABSTRACT FROM AUTHOR]

The tantalum oxide film was fabricated using an anodization process in a 0.5M H 2 SO 4 electrolyte. The evolution and corrosion resistance mechanism of anodized film on the Ta surface has been investigated by experiments and theoretical calculations. The results indicate that the sample with an anodic oxidation voltage of 20V and an anodic oxidation time of 60 min (Ta 20-60) exhibits the thickest oxidation film, measuring 360.00 nm and comprising an outer porous layer and an inner dense layer. Ta 20-60 demonstrates the highest E corr value of 0.009 V and the lowest I corr value of 0.879 μA cm−2, with a minimal density of point defects at 1.24 × 1019 cm−3, which imparts superior corrosion resistance. The calculation result shows that the growth rate of Ta anodic oxidation film is controlled by the diffusion and migration of vacancy defects. The O atom passes through one bridge site from the tetrahedral gap to another tetrahedral gap (Path 1) on the complete (110) surface has a low diffusion barrier of 0.470 eV and the shortest diffusion path of 2.04 Å, which is the most favorable path for the diffusion of O atoms. This paper offers a fresh perspective on the corrosion resistance of tantalum while furnishing guidance for improving Ta oxide film performance. [ABSTRACT FROM AUTHOR]

Nanocrystal (NC)-based devices suffer from a trade-off between absorption, pushing for thicker films, and charge conduction that is only efficient over a few NC sizes. Therefore, the design of detectors based on NCs strongly benefits from the introduction of optical resonators that engineer the light–matter coupling. Traditionally, the design of such a cavity relies on analytic scaling rules. However, the design becomes far more complex when multiple resonances are targeted, requiring alternative design strategies. In this study, we explore how infrared nanocrystals can be coupled to a guided mode resonator to achieve a broadband enhancement of absorption. A genetic algorithm is used to systematically investigate how geometric factors can be tuned to increase the absorption × bandwidth product. In comparison to the pristine film, a significant increase in absorption was demonstrated across the targeted spectral range (1–2.5 μm). The detector based on the design metasurface exhibited high detectivity (2 × 1010 Jones @ 200 K) and fast time response (18 ns). [ABSTRACT FROM AUTHOR]

Aramid copolymers have garnered significant interest due to their potential applications in extreme environments such as the aerospace, defense, and automotive industries. Recent developments in aramid copolymers have moved beyond their traditional use in high-strength, high-temperature resistant fibers. There is now a demand for new polymers that can easily be processed into thin films for applications such as electrical insulation films and membranes, utilizing the inherent properties of aramid copolymers. In this work, we demonstrate two novel aramid copolymers that are capable of polymerizing in polar organic solvents with a high degree of polymerization, achieved by incorporating flexible bis(4-aminophenoxy) benzene moieties into the chain backbone. The synthesized MBAB-aramid and PBAB-aramid have enabled the fabrication of exceptionally thin, clear films, with an average molecular weight exceeding 150 kDa and a thickness ranging from 3 to 10 μm. The dynamic mechanical analysis (DMA) and thermogravimetric analysis (TGA) reveal that the thin films of MBAB-aramid and PBAB-aramid exhibited glass transition temperatures of 270.1 °C and 292.7 °C, respectively, and thermal decomposition temperatures of 449.6 °C and 465.5 °C, respectively. The mechanical tensile analysis of the 5 μm thick films confirmed that the tensile strengths, with elongation at break, are 107.1 MPa (50.7%) for MBAB-aramid and 113.5 MPa (58.4%) for PBAB-aramid, respectively. The thermal and mechanical properties consistently differ between the two polymers, which is attributed to variations in the linearity of the polymer structures and the resulting differences in the density of intermolecular hydrogen bonding and pi-pi interactions. The resulting high-strength, ultra-thin aramid materials offer numerous potential applications in thin films, membranes, and functional coatings across various industries. [ABSTRACT FROM AUTHOR]

This study assesses the gas and water vapor permeance of PIM-derivative thin-film composite (TFC) membranes using pervaporation and "pressure increase" methods, and provides a comparative view of "time lag" measurements of thick films obtained from our previous work. In this study, TFC membranes were prepared using PIM-1 and homopolymers that were modified with different side groups to explore their effects on gas and water vapor transport. Rigid and bulky aliphatic groups were used to increase the polymer's free volume and were evaluated for their impact on both gas and water transport. Aromatic side groups were specifically employed to assess water affinity. The permeance of CO2, H2, CH4 and water vapor through these membranes was analyzed using the 'pressure increase' method to determine the modifications' influence on transport efficiency and interaction with water molecules. Over a 20 h period, the aging and the permeance of the TFC membranes were analyzed using this method. In parallel, pervaporation experiments were conducted on samples taken independently from the same membrane roll to assess water flux, with particular attention paid to the liquid form on the feed side. The significantly higher water vapor transport rates observed in pervaporation experiments compared to those using the "pressure increase" method underline the efficiency of pervaporation. This efficiency suggests that membranes designed for pervaporation can serve as effective alternatives to conventional porous membranes used in distillation applications. Additionally, incorporating "time lag" results from a pioneering study into the comparison revealed that the trends observed in "time lag" and pervaporation results exhibited similar trends, whereas "pressure increase" data showed a different development. This discrepancy is attributed to the state of the polymer, which varies significantly depending on the operating conditions. [ABSTRACT FROM AUTHOR]

This paper investigates the optoelectronic properties of CsPbBr3, a lead-based perovskite, and Cs2AgBiBr6, a lead-free double perovskite, in composite thick films synthesized using mechanochemical and hot press methods, with poly(butyl methacrylate) as the matrix. Comprehensive characterization was conducted, including X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), UV–visible spectroscopy (UV–Vis), and photoluminescence (PL). Results indicate that the polymer matrix does not significantly impact the crystalline structure of the perovskites but has a direct impact on the grain size and surface area, enhancing the interfacial charge transfer of the composites. Optical characterization indicates minimal changes in bandgap energies across all different phases, with CsPbBr3 exhibiting higher photocurrent than Cs2AgBiBr6. This is attributed to the CsPbBr3 superior charge carrier mobility. Both composites showed photoconductive behavior, with Cs2AgBiBr6 also demonstrating higher-energy (X-ray) photon detection. These findings highlight the potential of both materials for advanced photodetector applications, with Cs2AgBiBr6 offering an environmentally Pb-free alternative. [ABSTRACT FROM AUTHOR]

We investigated the spin Hall effect of Pt thin films deposited by atomic layer deposition (ALD) using the MeCpPtMe3 precursor on c-plane sapphire substrates. We show that while the spin Hall conductivity of ALD-grown Pt is relatively low (0.2–0.6 × 105 ℏ 2 e Ω−1 m−1) for Pt film thicknesses less than 7 nm, it suddenly increases for thicker films, reaching 2.5–3.0 × 105 ℏ 2 e Ω−1 m−1. This behavior is attributed to the intrinsic morphology of Pt thin films grown by ALD on sapphire, where ultrathin films (<7 nm) contain small islands, while thicker films are smoother due to the coalescence of islands. Our findings underscore the necessity of growing continuous films when applying ALD-grown spin Hall materials in three-dimensional (3D) spin–orbit torque (SOT) devices. These results confirm the potential of ALD in advancing SOT applications and pave the way for the development of next-generation three-dimensional SOT spintronic devices. [ABSTRACT FROM AUTHOR]

Hydrogen sensors are important in a hydrogen‐driven society to prevent explosions caused by hydrogen leaks into the atmosphere. In previous studies, resistive hydrogen sensors on polymer films have metal oxide nanostructures decorated with novel metals that enable good responses at room temperature. However, the in situ growth process of sensing nanostructures has the disadvantage of ineffective fabrication, particularly when preparing a thick catalyst layer to produce reliable readouts from the catalytic hydrogen combustion. This work presents a catalytic combustion hydrogen sensor with a thick catalyst layer anchored in a UV resin layer on polyimide film. Catalyst anchoring channels are made by UV imprinting with a glass mold. The sensor consists of a sensing electrode and a microheater, both made of Au within an area of 1.2 mm diameter. UV imprinting produces a UV resin layer of 27 µm thick and catalyst anchoring channels of 14 µm deep and 20–30 µm wide, which are filled with Pt/TiO2 as a catalyst. The sensing response is 7.9% for 1% H2 under ambient conditions, and the detection range is 0.1–3% H2. The UV‐resin microstructures can effectively retain a thick catalyst layer to enhance sensitivity, and their low thermal conductivity reduces heat loss. [ABSTRACT FROM AUTHOR]

Metal halide perovskites are revolutionizing X‐ray detection through a combination of low cost, solution processing, favorable optoelectronic properties, and high stopping power for high‐energy ionizing radiation. While perovskite single crystals and polycrystalline wafers are considered direct X‐ray converters, most medical X‐ray applications are based on scintillators that shift high‐energy radiation into the visible. Several materials are on the market, but demonstrations based on CsPbBr3 nanocrystals, possibly embedded in a matrix material or combined with organic molecules as luminescent species, highlight their competitiveness with established scintillators in terms of radioluminescence yield and transient behavior. Major hurdles that perovskite nanocrystal scintillators must overcome are environmental stability and toxicity. While there are still few examples of high‐performance lead‐free perovskite nanocrystal scintillators, microcrystalline perovskites are emerging with promising properties, reduced toxicity, and significant Stokes shifts to avoid reabsorption of emission in thick films. Thus, the near future of perovskite nanocrystal scintillator materials will primarily be the adoption of recipes for materials with proven properties in microcrystalline form. The nanocrystal colloidal solutions will facilitate the large‐scale printing of homogeneous and scattering‐free films to obtain high contrast and spatial resolution X‐ray images by scintillation. [ABSTRACT FROM AUTHOR]

It is a big challenge to prepare thick CsPbCl3 films using traditional solution processed approaches owing to the low solubility of precursors of PbCl2 and CsCl in common solvents. Here, we propose an indirect solution process to prepare thick CsPbCl3 films. In this new approach, a mother film of CsPbBr3 is first prepared through a solution process, and then it is dipped into a diluted HCl/methanol solution. During the dipping process, it triggers a halide exchange reaction between Br− and Cl−, and it eventually produces a thick CsPbCl3 film (∼400 nm) with high quality and purity. Afterwards, a carbon based hole transportation layer (HTL) free solar cell with a configuration of FTO/TiO2/CsPbCl3/carbon is constructed, and it delivers an average PCE of 1.23% and an outstanding PCE of 1.39% in a batch of PSCs. Meanwhile, the solar cell maintains its 82% initial PCE after storage in open air for 31 days. This work overcomes the obstacle of the traditional solution approach for the preparation of CsPbCl3 films, which makes it promising for preparing various CsPbCl3 film-based devices via a solution process. [ABSTRACT FROM AUTHOR]

Polymer-derived ceramics (PDCs) find extensive applications as sensitive materials in in-situ thin/thick film sensors (TFSs) co-fabricated with components. However, the prolonged high-temperature sintering steps of PDCs inevitably lead to severe thermal damage to their co-sintered substrates. In this study, we employed an ultrafast high-temperature sintering (UHS) method, achieving rapid sintering of preceramic polymer slurry sensitive films in just a few minutes. Through direct ink writing technology, we patterned the preceramic polymer slurry, followed by UHS to prepare high-temperature ITO/SiCN TFSs. UHS-ITO/SiCN exhibited high sensitivity of microstructure, composition, and electrical characteristics to UHS parameters. The obtained ITO/SiCN resistance grid showed high electrical conductivity (706.89 S m−1 at room temperature), highly dense surface structure and excellent oxidation resistance. In an air atmosphere, the resistance drift rate of the resistance grid at 900 °C was only 0.54 %·h−1 without any protective layers. Finally, we fabricated an ITO/SiCN heat flux sensor with high sensitivity (78.75 mV/(kW·m−2)), a wide range (94.8 kW m−2), and excellent repeatability. This work has the potential to expand the application of UHS in the manufacturing of novel in-situ TFSs integrated with components. [ABSTRACT FROM AUTHOR]

Due to its superior reliability and performance, thick film technology is extensively employed in various applications, including automotive electronics, consumer electronics, communication engineering, and aerospace. However, a challenge arises from the mutual diffusion during the electronic paste production process, which leads to a decline in insulation performance and hinders the production of three-dimensional equipment. Inspired by the principles of low-temperature co-fired ceramic technology, a multi-layered ceramic structure has been successfully bonded using thick film technology by introducing a borosilicate glass-ceramics layer. To further enhance the properties of this multi-layered ceramic structure, approximately 8 wt% SiO 2 was incorporated into the borosilicate glass-ceramics. This addition effectively inhibits silver diffusion and reduces the diffusion depth within the glass-ceramic film. The key mechanisms behind this improvement are the increased activation energy for crystallization, resulting in a slower crystallization rate due to the addition of SiO 2. Moreover, the multi-layered ceramic with a sandwich structure exhibits remarkable properties. Notably, the dielectric strength of this system has been significantly enhanced to 13.9 kV/mm, accompanied by a high adhesion strength of 790 N. These enhanced properties of the optimized system indicate promising characteristics for multi-layer circuit applications. [ABSTRACT FROM AUTHOR]

The role of pressure, temperature, and particle size on cold sintering of ZnO has been investigated with a view to developing transparent thick films for device applications. Coarse ZnO (∼90–250 nm, cZnO) particles exhibited equiaxed grain growth under all conditions eventually achieving grain sizes of ∼ 0.5–1.0 µm at 300°C/375 MPa. In contrast, nano‐ZnO (40–80 nm, nZnO), exhibited grain growth along the c‐axis with a broader grain size distribution (0.5–4 µm) at higher temperatures and pressure (300°C/375 MPa) than cZnO. The broader grain size distribution is attributed to greater dissolution for nZnO compared with cZnO coupled with redistribution of Zn acetate/acetic acid into pores. ZnO continues to dissolve and reprecipitate within the pores throughout the densification process resulting in localized, larger grain sizes. In plane grain growth normal to the pressing direction was observed at and near the sample surface particularly in nZnO, which is attributed to constrained‐sintering. Some abnormal grain growth (10–20 µm) was also sporadically observed near or at the surface of nZnO (300°C/375 MPa) due to greater rates of reprecipitation as the transient solvent volatilizes adjacent to the die wall/plunger. Tape casting was used to fabricate single and multiple layers (≈30 µm) of ZnO on Kapton® to demonstrate the potential for device fabrication. Transparency was achieved by choosing cold sintering conditions (200°C/250 MPa) for nZnO that gave ∼95% relative density while restricting a majority of grain growth to <200 nm so that internal light scattering from grain boundaries was avoided. [ABSTRACT FROM AUTHOR]

This work proposes an original method that reveals the transformation dynamics of nanosized Bi films into semiconductor films of bismuth oxide (Bi2O3) and the factors affecting the low‐energy cold plasma on the electro‐optical properties of Bi2O3. In the plasma microreactor with a photosensitive GaAs:Cr electrode, the transformed Bi films 400–1100 nm thick are analyzed by X‐ray diffraction to determine the crystal structure of Bi2O3 and by an electron probe microanalyzer to explore the evolution of the composition. The morphological properties of the Bi films exposed to electron–ion flow are examined by processing the scanning electron microscope images. It is found that as a result of the combined effect of photoactive illumination, charged particles, and active plasma components: 1) an absorption spectrum of a new substance is formed in the range λ = 330–1100 nm; 2) the optical width of the bandgap of the resulting substance is Eg ≈ 3 eV, which satisfactorily coincides with the width of the bandgap of Bi2O3; and 3) to overcome the potential barrier and formation of semiconducting Bi2O3 film energy is required, which is provided by the combined kinetic energy of electrons and negatively charged oxygen ions bombarding on the Bi film. [ABSTRACT FROM AUTHOR]

Photochromic yttrium oxyhydride, YHO, has excellent properties as a responsive solar control material, in particular due to its color-neutral darkening. In this work, we have investigated YHO's spectral response to the solar AM 1.5 spectrum to evaluate how the total photon activation flux changes as a function of thickness and wavelength. The calculations are based on ellipsometry measurements in the 240–2000 nm range. Our results show that the UV light absorption saturates at around 400 nm thick film, while blue light (>400 nm) continues to provide photoactivation well beyond 1 μm thickness. Understanding the spectral response and absorption per unit time of activating photons as a function of material thickness is important for evaluating the material or coating for applications. [ABSTRACT FROM AUTHOR]

In the present paper, we studied the microstructural and sensing behaviors of undoped SnO2 and PbO-doped SnO2 thick film. Three samples have been fabricated using the screen-printing technique on an aluminum substrate and these are S1 (undoped SnO2) S2 (1wt% PbO doped SnO2 firing at 800 oC), and S3 (1 wt% PbO doped SnO2 firing at 900 oC). XRD and AFM techniques are used to observe the microstructural behaviors and it is found that the crystallite size decreases with PbO doping. The reduction in crystallinity is to improve the sensing application. The sensing properties such as sensing response, selectivity, and transient time of the deposited thick films were studied at an operating temperature of 200 oC for various test gases such as ethanol, LPG, and acetone concentrations (0–5000 ppm level). Also, we found that the response of sensor S3 to the ethanol gas is ~ 3.38 times of LPG and ~ 1.95 times that of acetone gas. The response and recovery times of the ethanol gas for the S3 sensor are 41s and 125s, respectively. Therefore, the PbO doping improves the response and recovery time for ethanol gas (5000 ppm) over LPG and acetone. [ABSTRACT FROM AUTHOR]

The field of 3D and 4D printing is advancing rapidly, offering new ways to control the transformation of programmable 3D structures in response to external stimuli. This study examines the impact of 3D printing parameters, namely the UV ink thickness (applied using a UV inkjet printer on pre-3D-printed programmable structures) and thermal activation, on the dimensional and surface changes to high-stress (HS) and low-stress (LS) programmable samples and on print quality. The results indicate that HS samples shrink in the longitudinal direction, while expanding in terms of their height and width, whereas LS samples exhibit minimal dimensional changes due to lower programmed stress. The dynamic mechanical analysis shows that UV ink, particularly cyan and CMYK overprints, reduces the shrinkage in HS samples by acting as a resistive layer. Thicker ink films further reduce the dimensional changes in HS samples. Thermal activation increases the surface roughness of HS structures, leading to the wrinkling of UV ink films, while LS structures are less affected. The surface gloss decreases significantly in HS structures after UV ink application; however, thermal activation has little impact on LS structures. UV ink adhesion remains strong across both HS and LS samples, suggesting that UV inks are ideal for printing on programmable 3D structures, where the colour print quality and precise control of the shape transformation are crucial. [ABSTRACT FROM AUTHOR]

Elemental tellurium electrical switch, relying on a transient crystal–liquid–crystal phase transition, has recently been proposed as a promising selector candidate for the next‐generation 3D high‐density memory, bridging performance gap in today's computer. Further miniaturization of the switch cell to increase memory density strongly depends on the scalability of the tellurium film, which, however, has not been experimentally studied. Herein, the tellurium films are prepared with the thickness downscaled from 400 to 2 nm and a significant increase is found in the bandgap from 0.29 to 0.91 eV, as predicted by ab initio molecular dynamics. Interestingly, the as‐deposited tellurium films with a thickness above 3 nm are in the crystalline trigonal phase, whereas 2 nm thick film suddenly becomes amorphous, observed by both Raman and transmission electron microscopies. In this finding, since the leakage current of the elemental tellurium switch is determined by both the Schottky barrier between tellurium/electrode interface and the bandgap of the tellurium film, a reduction in leakage current is predicted with further miniaturization. [ABSTRACT FROM AUTHOR]

A Pulsed ns laser operating at 532 nm wavelength with 150 mJ pulse energy was employed to irradiate micrometric thick mylar films, from 1 to 100 μm thick, covered by 0.05 μm Au in the back face. Protons and light ions have been accelerated by the electric field developed in the non‐equilibrium plasma by the laser pulse in a vacuum at an intensity of the order of 1010 W/cm2. Time‐of‐flight technique, obtained using a Faraday cup and a fast storage oscilloscope, is employed to measure the ion velocity, energy, and yield emitted in backward and forward directions. The yield of the emitted plasma photons is also evaluated. Two ion collectors are used in opposite directions to measure the plasma radiations emitted in backward and forward directions. Data analysis is based on the Coulomb‐Boltzmann‐shifted (CBS) distribution function. The target ablation yield is evaluated in the order of 3.5 μm per laser shot. [ABSTRACT FROM AUTHOR]

Polaritons are generated by strong interaction between photons and matter, with the hybridization fundamentally changing the energy landscape of the system. Future exploitation of polaritons will benefit from implementing low‐cost, flexible, and easily tuneable configurations, as electronics have before. Here, coherent coupling of the carbonyl stretch vibrations of polyester (poly(ethylene terephthalate), PET) films to the optical modes of a Fabry–Perot (FP) cavity is presented, in which the FP cavity is directly formed on flexible, free‐standing, and commercially available PET films. For 2‐µm thick PET films, the carbonyl stretch vibration of the PET overlaps with the half‐wavelength FP cavity mode, leading to the coupling of the two modes, a Rabi splitting above 160 cm−1, and associated anticrossing in angular dispersion measurements. The study demonstrates dynamic control of light‐matter interaction strength by modulating film thickness under tension, finding that a 25% tensile stretch can tune the light‐matter interaction from 20:80 mixing to near‐perfect 50:50 hybridization at normal incidence. These findings are discussed in the context of future foldable/twistable/wearable polaritonic devices. [ABSTRACT FROM AUTHOR]

(1‐x)Na0.5Bi0.5TiO3‐xSr1‐1.5yBiyTiO3 solid solutions attract increased interest as lead‐free ferroelectrics perspective for sensors, actuators, and energy storage applications. However, thick films of this composition are of great demand, as they could serve as a good compromise between the bulk ceramics and thin films—due to the advantage in realization of miniaturized devices without reducing the power and sensitivity of target devices, as in the case of thin films, and ability to accommodate application of much higher electric fields compared to bulk ceramics. In the present research, for the first time, we have produced free‐standing 0.9Na0.5Bi0.5TiO3‐0.1Sr0.7Bi0.2TiO3 thick films by water‐based tape‐casting method, using just two organic chemicals, which is an eco‐friendly production approach having only several successful attempts in the case of ferroelectric materials before. We conducted a detailed study focusing on development of microstructure at various sintering temperatures and consequences of evaporation of Bi during the production. Our findings show how the choice of the sintering temperature can help in improvement of density of the thick films, reaching 98.9%, and changing the grain size. It is demonstrated that a secondary phase appears predominantly on the free surface of the films. We propose a method for effective minimization of its formation—by the choice of appropriate embedding powder media during the sintering. [ABSTRACT FROM AUTHOR]