200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) β-Ga2O3 epitaxial drift layers.

We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 μm thick β-Ga2O3 films with electron concentrations in the 1015 cm−3 range and record-high room temperature Hall electron mobilities of up to 200 cm2/Vs, reaching the predicted theoretical maximum room temperature phonon scattering-limited mobility value for β-Ga2O3. Growth of the homoepitaxial films was performed on Fe-doped (010) β-Ga2O3 substrates at a growth rate of 1.9 μm/h using TEGa as the Gallium precursor. To probe the background electron concentration, an unintentionally doped film was grown with a Hall concentration of 3.43 × 1015 cm−3 and Hall mobility of 196 cm2/Vs. Growth of intentionally Si-doped films was accomplished by fixing all growth conditions and varying only the silane flow, with controllable Hall electron concentrations ranging from 4.38 × 1015 to 8.30 × 1015 cm−3 and exceptional Hall mobilities ranging from 194 to 200 cm2/Vs demonstrated. C-V measurements showed a flat charge profile with the ND+–NA− values correlating well with the Hall-measured electron concentration in the films. SIMS measurements showed the silicon atomic concentration matched the Hall electron concentration with carbon and hydrogen below detection limit in the films. The Hall, C-V, and SIMS data indicate the growth of high-quality 4.5 μm thick β-Ga2O3 films and controllable doping into the mid 1015 cm−3 range. These results demonstrate MOCVD growth of electronics grade record-high mobility, low carrier density, and thick β-Ga2O3 drift layers for next-generation vertical β-Ga2O3 power devices. [ABSTRACT FROM AUTHOR]