1. Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O 2 /Ar Plasma.
- Author
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You, Sanghyun, Sun, Eunjae, Chae, Heeyeop, and Kim, Chang-Koo
- Subjects
- *
GLOW discharges , *PLASMA etching , *ELECTRIC discharges , *DIELECTRIC strength , *PLASMA potentials - Abstract
This study explores the impact of varying discharge gas compositions on the etching performance of silicon carbide (SiC) in a heptafluoroisopropyl methyl ether (HFE-347mmy)/O2/Ar plasma. SiC is increasingly favored for high-temperature and high-power applications due to its wide bandgap and high dielectric strength, but its chemical stability makes it challenging to etch. This research explores the use of HFE-347mmy as a low-global-warming-potential (GWP) alternative to the conventional high-GWP fluorinated gasses that are typically used in plasma etching. By examining the behavior of SiC etch rates and analyzing the formation of fluorocarbon films and Si-O bonds, this study provides insights into optimizing plasma conditions for effective SiC etching, while addressing environmental concerns associated with high-GWP gasses. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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