1. Statistical retention modeling in floating-gate cell: ONO scaling
- Author
-
Tai-Kyung Kim, Dongwan Shin, Choong-ho Lee, Andrey Serov, Tae-hun Kim, Moon-Hyun Yoo, Dae Sin Kim, Sug-Kang Sung, Young-Kwan Park, and Keun-Ho Lee
- Subjects
Materials science ,Monte Carlo method ,Hardware_PERFORMANCEANDRELIABILITY ,Blocking (statistics) ,Computational physics ,Non-volatile memory ,Computer Science::Hardware Architecture ,Stack (abstract data type) ,Logic gate ,Hardware_INTEGRATEDCIRCUITS ,Electronic engineering ,SILC ,Scaling ,Hardware_LOGICDESIGN ,Leakage (electronics) - Abstract
The simulation study of the ONO gate stack scaling, which includes the Monte-Carlo statistical analysis of time-dependent Vth distribution and SILC is performed. Leakage through both tunneling and blocking oxide is taken into account including multi-trap tunneling paths. Exact 50nm floating-gate cell structure is used instead of simple 1D stack for modeling and comparison with experimental data. Analysis of the influence of trap parameters on scaling trends is given.
- Published
- 2009
- Full Text
- View/download PDF