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Statistical retention modeling in floating-gate cell: ONO scaling.

Authors :
Serov, A.
Dongwan Shin
Dae Sin Kim
Taikyung Kim
Keun-Ho Lee
Young-Kwan Park
Moon-Hyun Yoo
Taehun Kim
Sug-Kang Sung
Choong-Ho Lee
Source :
2009 IEEE International Reliability Physics Symposium; 2009, p887-890, 4p
Publication Year :
2009

Details

Language :
English
ISBNs :
9781424428885
Database :
Complementary Index
Journal :
2009 IEEE International Reliability Physics Symposium
Publication Type :
Conference
Accession number :
81322728
Full Text :
https://doi.org/10.1109/IRPS.2009.5173372