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Presents information on a study which analyzed the role of dislocation-dislocation interactions on the relaxation behavior of biaxially stressed semiconductor thin films, by including interaction terms in an energy minimization. Summation of energetic terms; Choice of axes and dislocation parameters; Orthogonal interactions; Reformulation of the energy summation of misfit dislocations.

Investigates the thermal relaxation of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition. Thicknesses and compositions of the films; Average linear density of misfit dislocations versus annealing time; Information on the relaxation behavior and the interaction distance.

Presents a study which investigated the thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition. Experiment details; Results and discussion; Conclusion.

Presents information on a study wherein a simple model for the generation of substrate strain was developed and applied to the fabrication of advanced silicon integrated-circuit structures. Methods; Results; Discussion.

Explosive crystallization of amorphous Si is studied in a new heat-flow regime using long pulse (45 ns full width at half-maximum) ruby laser irradiation. In this regime, previously unobserved phenomena are found. Nucleation of crystalline Si is observed while the amorphous phase is melting at high (m/s) velocity and epitaxy from the underlying crystalline substrate is observed even under conditions for which the amorphous Si is never at any instant fully melted. These measurements, combined with previous measurements using short pulse irradiation, lead to development of a more complete model of explosive crystallization. [ABSTRACT FROM AUTHOR]