The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. I. Theory.

Presents information on a study which analyzed the role of dislocation-dislocation interactions on the relaxation behavior of biaxially stressed semiconductor thin films, by including interaction terms in an energy minimization. Summation of energetic terms; Choice of axes and dislocation parameters; Orthogonal interactions; Reformulation of the energy summation of misfit dislocations.