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InGaN quantum well structures on GaN epilayers were exposed to 500 keV alpha particles to fluences above [10.sup.14] [cm.sup.2] to probe the relative radiation tolerance of the epilayer and wells. Performance was estimated by the intensity of ion-beam induced luminescence. Two separate types of quantum well structures emitted at 470 and 510 nm prior to irradiation, and only small wavelength shifts were observed even with the highest alpha fluences. Complementary cathodoluminescence experiments showed that luminescence in the quantum wells is strongly influenced by charges injected deep into the GaN epilayer. The 500 keV alpha penetration depth was ~1 [micro]m, so that defects were created at a faster rate in GaN compared to InGaN as alpha particles slowed and stopped within a minority carrier diffusion length of the quantum wells. However, the rate of luminescent decay was similar for both materials. Taken together with the cathodoluminescence data, this ion-beam induced luminescence comparison indicates that the quantum well luminescence decay rate is dominated by radiation-induced defects in the GaN epilayer. InGaN quantum wells are then demonstrated to be not more than a factor of ten more radiation sensitive than GaN, and may be substantially less sensitive than this upper bound. Index Terms--Alpha particle, InGaN, light-emitting diode, quantum well, radiation.

In situ optical measurements are used to examine the mechanisms for light emission and damage in Eu-doped GaN thin films. The efficiency of the ion-beam-induced luminescence process is estimated by using a well-characterized scintillator, Ba[F.sub.2].