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Your search keyword '"Stevanovic, Ljubisa"' showing total 28 results
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28 results on '"Stevanovic, Ljubisa"'

1. DC and transient performance of 4H-SiC double-implant MOSFETs

Author

Losee, Pete A., Matocha, Kevin, Arthur, Stephen D., Nasadoski, Jeffrey, Stum, Zachary, Garrett, Jerome L., Schutten, Michael, Dunne, Greg, and Stevanovic, Ljubisa

Subjects
Diodes -- Evaluation, Voltage -- Evaluation, Metal oxide semiconductor field effect transistors -- Design and construction, Silicon carbide -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

SiC vertical MOSFETs are fabricated and characterized with blocking voltages of about 1 kV and a specific on-resistance as low as 8.3 m[omega].[cm.sup.2]. The internal body diode's reverse recovery characteristics have shown injection-limited conduction, which are attributed to the implanted P-anode layers.

Published
2008

5. High performance SiC MOSFET module for industrial applications

Author

Stevanovic, Ljubisa, primary, Rowden, Brian, additional, Harfman-Todorovic, Maja, additional, Losee, Peter, additional, Bolotnikov, Alexander, additional, Kennerly, Stacey, additional, Schuetz, Tobias, additional, Carastro, Fabio, additional, Datta, Rajib, additional, Tao, Fengfeng, additional, Raju, Ravi, additional, and Cioffi, Philip, additional

Published
2016
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7. Readiness of SiC MOSFETs for Aerospace and Industrial Applications

Author

Stevanovic, Ljubisa, primary, Losee, Peter A., additional, Kennerly, Stacey, additional, Bolotnikov, Alexander, additional, Rowden, Brian, additional, Smolenski, Joseph, additional, Harfman-Todorovic, Maja, additional, Datta, Rajib, additional, Arthur, Stephen, additional, Lilienfeld, David, additional, Schuetz, Tobias, additional, Carastro, Fabio, additional, Tao, Feng Feng, additional, Esler, David, additional, Raju, Ravi, additional, Dunne, Greg, additional, Cioffi, Philip, additional, and Yu, Liang Chun, additional

Published
2016
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9. Overview of 1.2kV – 2.2kV SiC MOSFETs targeted for industrial power conversion applications

Author

Bolotnikov, Alexander, primary, Losee, Peter, additional, Permuy, Alfred, additional, Dunne, Greg, additional, Kennerly, Stacey, additional, Rowden, Brian, additional, Nasadoski, Jeffrey, additional, Harfman-Todorovic, Maja, additional, Raju, Ravisekhar, additional, Tao, Fengfeng, additional, Cioffi, Philip, additional, Mueller, Frank J., additional, and Stevanovic, Ljubisa, additional

Published
2015
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14. 3.3kV SiC MOSFETs designed for low on-resistance and fast switching

Author

Bolotnikov, Alexander, primary, Losee, Peter, additional, Matocha, Kevin, additional, Glaser, John, additional, Nasadoski, Jefrey, additional, Wang, Lei, additional, Elasser, Ahmed, additional, Arthur, Steven, additional, Stum, Zachary, additional, Sandvik, Peter, additional, Sui, Yang, additional, Johnson, Tammy, additional, Sabate, Juan, additional, and Stevanovic, Ljubisa, additional

Published
2012
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15. Design, Yield and Process Capability Study of 8 kV 4H-SiC PIN Diodes

Author

Bolotnikov, Alex V., primary, Losee, Peter A., additional, Matocha, Kevin, additional, Nasadoski, Jeff, additional, Glaser, John, additional, Arthur, Steve, additional, Stum, Z., additional, Garrett, J., additional, Elasser, Ahmed, additional, Stevanovic, Ljubisa, additional, Naik, Harsh, additional, and Chow, T. Paul, additional

Published
2012
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16. Switching converters for input current shaping and regulation of multiple outputs

Author

Stevanovic, Ljubisa D.

Subjects
Electrical Engineering
Abstract

A novel class of isolated Capacitive Idling switching power converters featuring decoupled primary and secondary side feedback loops is presented. While preserving the cost, size and simplicity of the conventional multiple output dc-to-dc converters, this new class of isolated converters possesses the following advantages: no need to cross isolation barrier in the feedback, full regulation of all outputs from no-load to full-load, faster transient response, and independent short circuit protection of each output. Operation of the Capacitive Idling converters in single-phase ac-to-dc power conversion systems is also analyzed. It is found that these converters perform input current shaping automatically, i.e., without an input current feedback loop. This is achieved by operating primary side inductance(s) in discontinuous inductor current mode (DICM). Consequently, the high power factor performance is obtained without any penalty in complexity, cost and size of the converter. Input current shaping and full regulation of multiple outputs is made possible by the internal energy storage and presence of one secondary-side active switch for each output. When compared to conventional current shaper-regulator configurations involving up to three cascaded power stages, the new converter class represents a very attractive alternative. The main advantages of the Capacitive Idling shapers are: - current shaping and regulation in a single power stage, - simplified control implementation with no feedback isolation, - wide bandwidth loop gain on all outputs, - independent short-circuit protection of each output. Analysis of the Capacitive Idling converters reveals that the input current shaping mode of operation involves a trade-off between the high power factor and the increased switch voltage stress. Boundary of the DICM of operation is determined, resulting in a design equation for the primary side inductance(s). Experimental results verify the analysis and confirm that these converters represent a viable and attractive approach for input current shaping and multiple output regulation.

Published
1995
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17. 4kV Silicon Carbide MOSFETs

Author

Stum, Zachary, primary, Bolotnikov, A.V., additional, Losee, Peter A., additional, Matocha, Kevin, additional, Arthur, Steve, additional, Nasadoski, Jeff, additional, Rao, R. Ramakrishna, additional, Saadeh, O.S., additional, Stevanovic, Ljubisa, additional, Myers-Ward, Rachael L., additional, Eddy, Charles R., additional, and Gaskill, D. Kurt, additional

Published
2011
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24. 100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules

Author

Losee, Peter A., primary, Matocha, Kevin, additional, Arthur, Steve, additional, Delgado, Eladio, additional, Beaupre, Richard, additional, Pautsch, A., additional, Rao, R. Ramakrishna, additional, Nasadoski, Jeff, additional, Garrett, Jerome L., additional, Stum, Zachary, additional, Stevanovic, Ljubisa, additional, Conte, Rosa Ana, additional, and Monaghan, Keith, additional

Published
2009
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27. Low Output Capacitance 1500V 4H-SiC MOSFETs with 8 mΩ·cm2 Specific On-Resistance

Author

Matocha, Kevin, Tucker, Jesse, Arthur, Steve, Schutten, Michael, Nasadoski, Jeff, Glaser, John, and Stevanovic, Ljubisa

Abstract

SiC MOSFETs are characterized with a specific on-resistance of 8 m[removed info]⋅cm2 at room temperature and a blocking voltage of 1500 V. Due to the negative shift in the threshold voltage, devices typically show a reduction in on-resistance with temperature. However, this work shows that a positive resistance temperature coefficient can be achieved by proper device design. SiC MOSFETs were characterized for use in high-frequency resonant converters, where an important switching device figure of merit is the product of the device on-resistance and output capacitance (Ron×Coss). For devices with an active area of 3.6×10-3 cm2, the output capacitance is 12.5 pF at a drain bias of 270V. Thus, these device achieve a resonant converter figure of merit Ron×Coss = 28 [removed info]⋅pF at room temperature and 34 [removed info]⋅pF at 150°C, better than commercial silicon superjunction devices operating at the same temperatures.

Published
2007
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