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Every neuron in a human brain is connected via its synapses to 10-15.000 other neurons. Those connections can over time be reconfigured allowing new connections with any other neuron. But only few of the longer connections are concurrently active. BEOL TFT should enable large scale reconfigurable interconnect that allows to connect every neuron with every neuron even across the whole neuromorphic IC but with only limited amount of them concurrently active., Proc. 46th Europ. Solid-state Device Conf.(ESSDERC), Lausanne, Switzerland

In this work, we demonstrate for the first time a large-area a-IGZO thin-film imager using current-mode active pixel. It is read out by a custom transimpedance IC, and has 3122e- noise and 71.4dB dynamic range. http://imagesensors.org/2019-international-image-sensor-workshop/ lccn: C43116 file: C\:\Users\jangenoe\Zotero\storage\6S2T3MAP\P07_DeRoose_1_v1.2.pptx;C\:\Users\jangenoe\Zotero\storage\8LG3RKP6\Roose et al. - A large-area a-IGZO 256x256 imager using a current.pdf;C\:\Users\jangenoe\Zotero\storage\F79M63NA\IISW-Program-Rev5.4.pdf;C\:\Users\jangenoe\Zotero\storage\H35RNFHQ\IISW2019_Poster_FDR_v1.pdf;C\:\Users\jangenoe\Zotero\storage\TDHK4MSZ\IISW2019_FDR_final.pdf ids: florianderooseLargeareaAIGZO256x256 ispartof: pages:4-4 ispartof: 2019 International Image Sensor Workshop ispartof: 2019 INTERNATIONAL IMAGE SENSOR WORKSHOP location:Snowbird Resort, Utah, USA date:24 Jun - 27 Jun 2019 status: published

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We present dual-gate (DG) dual-layer (a-ITZO and a-IGZO) amorphous oxide TFTs integrated on polyimide (PI) foil. The fabricated TFTs show an apparent dual-gate field-effect mobility ($\mathrmμ$FE) of 45.0 cm2/ (V.s), sub-threshold slope (SS-1) of 0.40 V/decade and ION/IOFF ratio of $>$108. The DG dual-layer TFT based ring-oscillators exhibit faster oscillation frequencies (fosc) compared to DG a-IGZO TFT based ring-oscillators. These TFTs are paving the way to faster scan drivers and higher resolution displays. It is also verified that with DG dual-layer TFTs, the current variation can be reduced when applying an off-panel compensation method to the asymmetric channel. lccn: C42287 shorttitle: P-12 keywords: flexible displays,Metal-oxide semiconductors,TFT ispartof: SID Symposium Digest of Technical Papers vol:50 issue:1 pages:1255-1258 status: published

We present a thin-film dual-layer bottom barrier on polyimide that is compatible with 350°C backplane processing for organic light-emitting diode displays and that can facilitate foldable active-matrix organic light-emitting diode devices with a bending radius of

High-resolution RGB organic light-emitting diode frontplane is a key enabler for direct-view transparent augmented reality displays. In this paper, we demonstrate 1250 ppi passive displays and semi-transparent active displays. Organic light-emitting diode photolithography can provide pixel density above 1000 ppi while keeping effective emission area high because of high aperture ratio. Patterns with 2 μm line pitch were successfully transferred to emission layers, indicating possible further pixel density scaling. Lifetime after patterning, key parameter enabling industrialization, is above 150 h (T90 at 1000 nit).

A novel external VT compensation method, using a simple driving scheme, is presented, enabling high resolution, yet uniform displays, regardless of the size. The uniformity can be maintained for initial VT nonuniformities as well as VT shifts occurring during operation, like bias stress. The characterized display area shows a significant reduction in current variation, transforming ~23% variation without compensation into 0.56% variation after calibration.

In this work, we have reported dual-gate amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs), where a top-gate self-aligned TFTs has a secondary bottom gate and the TFT integration comprises only five mask steps. The electrical characteristics of a-IGZO TFTs under different gate control are compared. With the enhanced control of the channel with two gates connected together, parameters such as on current (ION), sub-threshold slope (SS−1), output resistance, and bias-stress instabilities are improved in comparison with single-gate control self-aligned a-IGZO TFTs. We have also investigated the applicability of the dual-gate a-IGZO TFTs in logic circuitry such as 19-stage ring oscillators. ispartof: Journal of the Society for Information Display vol:25 issue:6 pages:349-355 status: published

© 2017 IEEE. Flexible low-cost RFID/NFC tags have great potential to be embedded in everyday objects providing them a unique identifier or sensor readout facilitating the Internet-of-Everything, whereby a smartphone or tablet is the interface to the Internet-of-Things. The main challenge for flexible metal-oxide RFID tags is to fully comply with the ISO14443-A NFC standard to enable readout by standard NFC reader or handheld devices, due to the limited charge carrier mobility of the semiconductor and multiple sources of parameter variation caused by roughness, temperature and dimensional stability of the foils. Recent work by various groups [1-4] demonstrated only an incremental improvement in data rates from 50b/s to 396.5kb/s to be compatible with ISO14443 (105.9kb/s). In this work, we present a flexible metal-oxide NFC chip that is compliant with ISO14443-A, showcasing advancements on memory size, power consumption and a clock generation circuit. ispartof: pages:258-258 ispartof: Digest of Technical Papers - IEEE International Solid-State Circuits Conference vol:60 pages:258-258 ispartof: 64th IEEE International Solid-State Circuits Conference (ISSCC) location:San Francisco: CA date:5 Feb - 9 Feb 2017 status: published

ispartof: International Display Manufacturing Conference - IDMC ispartof: International Display Manufacturing Conference - IDMC location:Taipei Taiwan date:9 Jan 2017 status: published

© 2016 IEEE. We show an active artificial iris based on solely thin-film components, wherein several LCD elements are controlled a metal-oxide TFT and by powered by thin-film photovoltaics (TFPV). Key aspects for the driver are size and low power consumption. We demonstrate power consumption down to 25μW for the full iris. ispartof: pages:32- ispartof: International Electron Device Meeting (IEDM) 2016 pages:32- ispartof: International Electron Device Meeting 2016 location:San Francisco, USA date:3 Dec - 7 Dec 2016 status: published