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In single-layer (1L) transition metal dichalcogenides, the reduced Coulomb screening results in strongly bound excitons which dominate the linear and the nonlinear optical response. Despite the large number of studies, a clear understanding on how many-body and Coulomb correlation effects affect the excitonic resonances on a femtosecond time scale is still lacking. Here, we use ultrashort laser pulses to measure the transient optical response of 1L-WS

Vertical heterostructures (HS) of transition metal dichalcogenides (TMDs) host interlayer excitons (ILX), with electrons and holes residing in different layers. With respect to their intralayer counterparts, ILX feature much longer lifetimes and diffusion lengths, paving the way to excitonic optoelectronic devices operating at room temperature. While the recombination dynamics of ILX has been intensively studied, the formation process and its underlying physical mechanisms are still largely unexplored. Here we use ultrafast transient absorption spectroscopy with a white-light probe, spanning both intralayer and interlayer exciton resonances, to simultaneously capture and time-resolve interlayer charge transfer and ILX formation dynamics in a MoSe$_2$/WSe$_2$ HS. We find that the ILX formation timescale is nearly an order of magnitude (~1 ps) longer than the interlayer charge transfer time (~100 fs). Microscopic calculations attribute the relative delay to an interplay between a phonon-assisted interlayer exciton cascade and subsequent cooling processes, and excitonic wave-function overlap. Our results provide an explanation to the efficient photocurrent generation observed in optoelectronic devices based on TMD HS, as the ILX have an opportunity to dissociate during their thermalization process., Comment: 18 pages, 4 figures

Single-layer transition metal dichalcogenides are at the center of an ever increasing research effort both in terms of fundamental physics and applications. Exciton–phonon coupling plays a key role in determining the (opto)electronic properties of these materials. However, the exciton–phonon coupling strength has not been measured at room temperature. Here, we use two-dimensional micro-spectroscopy to determine exciton–phonon coupling of single-layer MoSe2. We detect beating signals as a function of waiting time induced by the coupling between A excitons and A′1 optical phonons. Analysis of beating maps combined with simulations provides the exciton–phonon coupling. We get a Huang–Rhys factor ~1, larger than in most other inorganic semiconductor nanostructures. Our technique offers a unique tool to measure exciton–phonon coupling also in other heterogeneous semiconducting systems, with a spatial resolution ~260 nm, and provides design-relevant parameters for the development of optoelectronic devices. The exciton–phonon coupling (EXPC) affects the opto-electronic properties of atomically thin semiconductors. Here, the authors develop two-dimensional micro-spectroscopy to determine the EXPC of monolayer MoSe2.

Optical parametric amplification is a second-order nonlinear process whereby an optical signal is amplified by a pump via the generation of an idler field1. This mechanism is inherently related to spontaneous parametric down-conversion, which currently constitutes the building block for entangled photon pair generation2, a process that is exploited in modern quantum technologies. Here we demonstrate single-pass optical parametric amplification at the ultimate thickness limit; using semiconducting transition metal dichalcogenides3,4, we show that amplification can be attained over propagation through a single atomic layer. Such a second-order nonlinear interaction at the two-dimensional limit bypasses phase-matching requirements5 and achieves ultrabroad amplification bandwidths. In agreement with first-principle calculations, we observe that the amplification process is independent of the in-plane polarization of signal and pump fields. By the use of AA-stacked multilayers, we present a clear pathway towards the scaling of conversion efficiency. Our results pave the way for the development of atom-sized tunable sources of radiation with potential applications in nanophotonics and quantum information technology. Single-pass optical parametric amplification is demonstrated following propagation though an atomically thin semiconducting transition metal dichalcogenide. The demonstration may lead to atom-sized tunable light sources.

The excitation and detection of coherent phonons has given unique insights into condensed matter, in particular for materials with strong electron-phonon coupling. We report a study of coherent phonons in the layered charge density wave (CDW) compound 1$T$-TaSe$_2$ performed using transient broadband reflectivity spectroscopy, in the photon energy range 1.75-2.65 eV. Several intense and long lasting (> 20 ps) oscillations, arising from the CDW superlattice reconstruction, are observed allowing for detailed analysis of the spectral dependence of their amplitude and phase. We find that for energies above 2.4 eV, where transitions involve Ta d-bands, the CDW amplitude mode at 2.19 THz dominates the coherent response. At lower energies, instead, beating arises between additional frequencies, with a particularly intense mode at 2.95 THz. Interestingly, our spectral analysis reveals a $π$ phase shift at 2.4 eV. Results are discussed considering the selective coupling of specific modes to energy bands involved in the optical transitions seen in steady-state reflectivity. The work demonstrates how coherent phonon spectroscopy can distinguish and resolve optical states strongly coupled to the CDW order and provide additional information normally hidden in conventional steady-state experiments., 20 pages, 4 figures

The equilibrium and non-equilibrium optical properties of single-layer transition metal dichalcogenides (TMDs) are determined by strongly bound excitons. Exciton relaxation dynamics in TMDs have been extensively studied by time-domain optical spectroscopies. However, the formation dynamics of excitons following non-resonant photoexcitation of free electron-hole pairs have been challenging to directly probe because of their inherently fast timescales. Here, we use extremely short optical pulses to non-resonantly excite an electron-hole plasma and show the formation of two-dimensional excitons in single-layer MoS2 on the timescale of 30 fs via the induced changes to photo-absorption. These formation dynamics are significantly faster than in conventional 2D quantum wells and are attributed to the intense Coulombic interactions present in 2D TMDs. A theoretical model of a coherent polarization that dephases and relaxes to an incoherent exciton population reproduces the experimental dynamics on the sub-100-fs timescale and sheds light into the underlying mechanism of how the lowest-energy excitons, which are the most important for optoelectronic applications, form from higher-energy excitations. Importantly, a phonon-mediated exciton cascade from higher energy states to the ground excitonic state is found to be the rate-limiting process. These results set an ultimate timescale of the exciton formation in TMDs and elucidate the exceptionally fast physical mechanism behind this process., The formation dynamics of excitons in 2D transition metal dichalcogenides are challenging to probe directly because of their inherently fast timescales. Here, the authors use extremely short optical pulses to excite an electron-hole plasma, and show the formation of 2D excitons in MoS2 on the timescale of 30 fs.

MoSe2/WSe2 transition metal dichalcogenide heterostructures host spatially-indirect interlayer excitons (ILX) following interlayer charge transfer (ICT). We perform ultrafast transient absorption spectroscopy directly probing the ILX formation time and find it to be significantly longer than ICT.

We fully disentangle Coulomb-induced band-gap renormalization, excitation-induced dephasing and Pauli blocking effects, from the transient optical response of monolayer WS2. A complete picture of the coherent optical response is quantitatively reproduced by microscopic calculations.

Photoexcited electrons and holes rapidly undergo spatial separation in transition metal dichalcogenide Heterostructures (HS) with Type II band alignment. Using Two-dimensional Electronic Spectroscopy, we simultaneously detect interlayer hole and electron transfer in a WS2/MoS2 HS with sub-100 fs timescales.

Transient absorption spectroscopy is a powerful tool to monitor the out-of-equilibrium optical response of photoexcited semiconductors. When this method is applied to two-dimensional semiconductors deposited on different substrates, the excited state optical properties are inferred from the pump-induced changes in the transmission/reflection of the probe, i.e., ΔT/T or ΔR/R. Transient optical spectra are often interpreted as the manifestation of the intrinsic optical response of the monolayer, including effects such as the reduction of the exciton oscillator strength, electron-phonon coupling or many-body interactions like bandgap renormalization, trion or biexciton formation. Here we scrutinize the assumption that one can determine the non-equilibrium optical response of the TMD without accounting for the substrate used in the experiment. We systematically investigate the effect of the substrate on the broadband transient optical response of monolayer MoS2 (1L-MoS2) by measuring ΔT/T and ΔR/R with different excitation photon energies. Employing the boundary conditions given by the Fresnel equations, we analyze the transient transmission/reflection spectra across the main excitonic resonances of 1L-MoS2. We show that pure interference effects induced by the different substrates explain the substantial differences (i.e., intensity, peak energy and exciton linewidth) observed in the transient spectra of the same monolayer. We thus demonstrate that the substrate strongly affects the magnitude of the exciton energy shift and the change of the oscillator strength in the transient optical spectra. By highlighting the key role played by the substrate, our results set the stage for a unified interpretation of the transient response of optoelectronic devices based on a broad class of TMDs.

Optical parametric amplification is a coherent mechanism whereby an optical signal is amplified by a pump via the generation of an idler field and it is the key ingredient of parametric oscillators. Here we demonstrate optical parametric amplification by monolayer transition-metal dichalcogenides, showing that amplification can be attained over a propagation through an atomic layer. The surface-like second-order nonlinear interaction bypasses phase-matching constraints, enabling ultrabroadband collinear amplification, generally unattainable due to material dispersion. Moreover, the amplification process is invariant over signal and pump in-plane polarizations. Our experimental findings pave the way for innumerable applications in nanophotonics and quantum information technology.

Monolayer transition metal dichalcogenides bear great potential for photodetection and light harvesting due to high absorption coefficients. However, these applications require dissociation of strongly bound photogenerated excitons. The dissociation can be achieved by vertically stacking different monolayers to realize band alignment that favors interlayer charge transfer. In such heterostructures, the reported recombination times vary strongly, and the charge separation and recombination mechanisms remain elusive. We use two color pump-probe microscopy to demonstrate that the charge separation in a MoSe2/WSe2 heterostructure is ultrafast (∼200 fs) and virtually temperature independent, whereas the recombination accelerates strongly with temperature. Ab initio quantum dynamics simulations rationalize the experiments, indicating that the charge separation is temperature-independent because it is barrierless, involves dense acceptor states, and is promoted by higher-frequency out-of-plane vibrations. The strong temperature dependence of the recombination, on the other hand, arises from a transient indirect-to-direct bandgap modulation by low-frequency shear and layer breathing motions.

In this work we briefly review the studies of the optical constants of monolayer transition metal dichalcogenides and few layer black phosphorus, with particular emphasis to the complex dielectric function and refractive index. Specifically, we give an estimate of the complex index of refraction of phosphorene and few-layer black phosphorus. We extracted the complex index of refraction of this material from differential reflectance data reported in literature by employing a constrained Kramers-Kronig analysis. Finally, we studied the linear optical response of multilayer systems embedding phosphorene by using the transfer matrix method., Comment: 11 pages, 3 figures

We present a transient absorption setup combining broadband detection over the visible-UV range with high temporal resolution (∼20 fs) which is ideally suited to trigger and detect vibrational coherences in different classes of materials. We generate and detect coherent phonons (CPs) in single-layer (1L)-MoS

We use ultrafast spectroscopy to resolve the interlayer charge scattering processes in heterostructures (HS) of two-dimensional materials. In a WSe2/MoSe2 HS we photogenerate intralayer excitons in MoSe2 and observe hole injection in WSe2 on the sub-picosecond timescale, leading to the formation of interlayer excitons. The temperature dependence of the build-up and decay of interlayer excitons provide insights into the coupling mechanisms. In a graphene/WS2 HS we observe ultrafast charge transfer from graphene to the semiconductor. The data are consistent with hot electron/hole transfer, whereby a tail the hot Fermi-Dirac carrier distribution in graphene tunnels through the Schottky barrier into WS2.

Excitonic interactions determine the photoelectric properties of two-dimensional semiconductors. By using spatially resolved coherent two-dimensional micro-spectroscopy, we are able to determine the strength of exciton–phonon coupling in single-layer MoSe2 at room temperature.

Atomically thin transition-metal dichalcogenides (TMDs) exhibit strong light–matter interaction and pronounced excitonic behavior. Understanding the nonequilibrium dynamical processes of photoexcited carriers in such materials is a key step in view of their technological applications. Here, we review the ultrafast photophysics of 2D TMDs and related heterostructures (HSs) measured by femtosecond optical spectroscopy. First, we provide a general introduction on the physics of the materials and a brief explanation of the ultrafast optical techniques. Then we discuss the physical processes governing their nonequilibrium optical response, with a particular emphasis on the intervalley scattering dynamics, and the charge-transfer processes in 2D HSs. We conclude by discussing open issues and perspectives for future experiments.

Broadband transient absorption with sub-20fs temporal resolution, supported by ab-initio calculations, quantitatively provides the strength of exciton-coherent phonon coupling in 1L-MoS2, showing a resonant profile around the C exciton.

Here we exploit transient reflectivity with sub-20fs temporal resolution to extract the exciton formation timescale from the build up of A/B exciton dynamics of 1L-MoS2. The timescale for this process ranges from ~15fs to ~35fs. © 2020 The Author(s)

We investigate charge transfer dynamics in graphene/WS2 heterostructures via transient reflection spectroscopy. By selectively exciting graphene with NIR sub-20fs pulses we resolve the build-up of the WS2 excitonic transitions due to the hot-carriers tunneling.

This paper presents a femtosecond optical pump-probe study of the non-equilibrium behavior of the coupled optical resonances in semiconducting WS2. The authors focus on the transient optical response of WS2 nanotubes and show that it arises primarily from the photoinduced shifts of the exciton and trion resonances due to band gap renormalization and screening of the Coulomb interaction providing the exciton and trion binding energy.

Atomically thin Transition-metal dichalcogenides (TMDs) have come into the spotlight in optoelectronics thanks to their outstanding physical properties [1,2]. In single-layer (1L) TMDs strong quantum confinement effects cause a weak screening of Coulomb, so that the excitons created by photo-excitation have large binding energy, up to several hundred meVs [3]. While the steady-state properties of TMDCs have been studied in detail by linear optical techniques, the recent application of time-resolved nonlinear spectroscopy (mainly ultrafast pump-probe) has enabled the study of excited-state dynamics on femtosecond timescales [4] opening up questions about the mechanisms of exciton relaxations and exciton-exciton interactions.

Single layer (1L) transition metal dichalcogenides (TMDs) have attracted huge interest because of their peculiar optoelectronic properties and strong excitonic effects[1]. Van der Waals heterostructures, obtained by stacking two 1L-TMDs on top of each other, have been intensively investigated because of their possible applications in electronics and optoelectronics[2]. Of particular interest are type II TMDs heterostructures where the peculiar band alignment leads to a staggered gap (the valence band maximum and the conduction band minumum are in the same layer). The main reason is due to the fact that this kind of band alignment allows an efficient charge separation which is particularly beneficial for photovoltaics and solar cell technology based on atomically thick materials.

We present a transient absorption setup combining broadband detection over the visible-UV range with high temporal resolution ($\sim$20fs) which is ideally suited to trigger and detect vibrational coherences in different classes of materials. We generate and detect coherent phonons (CPs) in single layer (1L) MoS$_2$, as a representative semiconducting 1L-transition metal dichalcogenide (TMD), where the confined dynamical interaction between excitons and phonons is unexplored. The coherent oscillatory motion of the out-of-plane $A'_{1}$ phonons, triggered by the ultrashort laser pulses, dynamically modulates the excitonic resonances on a timescale of few tens fs. We observe an enhancement by almost two orders of magnitude of the CP amplitude when detected in resonance with the C exciton peak, combined with a resonant enhancement of CP generation efficiency. Ab initio calculations of the change in 1L-MoS$_2$ band structure induced by the $A'_{1}$ phonon displacement confirm a strong coupling with the C exciton. The resonant behavior of the CP amplitude follows the same spectral profile of the calculated Raman susceptibility tensor. This demonstrates that CP excitation in 1L-MoS$_2$ can be described as a Raman-like scattering process. These results explain the CP generation process in 1L-TMDs, paving the way for coherent all-optical control of excitons in layered materials in the THz frequency range.

We use helicity-resolved transient absorption spectroscopy to track intravalley scattering dynamics in monolayer WS2. We find that spin-polarized carriers scatter from upper to lower conduction band by reversing their spin orientation on a sub-ps timescale.

Graphene is an ideal material for integrated nonlinear optics thanks to its strong light-matter interaction and large nonlinear optical susceptibility. Graphene has been used in optical modulators, saturable absorbers, nonlinear frequency converters, and broadband light emitters. For the latter application, a key requirement is the ability to control and engineer the emission wavelength and bandwidth, as well as the electronic temperature of graphene. Here, we demonstrate that the emission wavelength of graphene$'$ s broadband hot carrier photoluminescence can be tuned by integration on photonic cavities, while thermal management can be achieved by out-of-plane heat transfer to hexagonal boron nitride. Our results pave the way to graphene-based ultrafast broadband light emitters with tunable emission.

Transition metal dichalcogenides (TMDs) are emerging as promising two-dimensional (2d) semiconductors for optoelectronic and flexible devices. However, a microscopic explanation of their photophysics -- of pivotal importance for the understanding and optimization of device operation -- is still lacking. Here we use femtosecond transient absorption spectroscopy, with pump pulse tunability and broadband probing, to monitor the relaxation dynamics of single-layer MoS2 over the entire visible range, upon photoexcitation of different excitonic transitions. We find that, irrespective of excitation photon energy, the transient absorption spectrum shows the simultaneous bleaching of all excitonic transitions and corresponding red-shifted photoinduced absorption bands. First-principle modeling of the ultrafast optical response reveals that a transient bandgap renormalization, caused by the presence of photo-excited carriers, is primarily responsible for the observed features. Our results demonstrate the strong impact of many-body effects in the transient optical response of TMDs even in the low-excitation-density regime., Comment: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano after peer review and technical editing by the publisher. To access the final edited and published work see: http://pubs.acs.org/articlesonrequest/AOR-fcCuTYn5m6wiDTIg98Kx

Semiconducting transition metal dichalcogenides (TMDs) have been applied as the active layer in photodetectors and solar cells, displaying substantial charge photogeneration yields. However, their large exciton binding energy, which increases with decreasing thickness (number of layers), as well as the strong resonance peaks in the absorption spectra suggest that excitons are the primary photoexcited states. Detailed time- domain studies of the photoexcitation dynamics in TMDs exist mostly for MoS2. Here, we use femtosecond optical spectroscopy to study the exciton and charge dynamics following impulsive photoexcitation in few-layer WS2. We confirm excitons as the primary photoexcitation species and find that they dissociate into charge pairs with a time constant of about 1.3 ps. The better separation of the spectral features compared to MoS2 allows us to resolve a previously undetected process: these charges diffuse through the samples and get trapped at defects, such as flake edges or grain boundaries, causing an appreciable change of their transient absorption spectra. This finding opens the way to further studies of traps in TMD samples with different defect contents.

In monolayer (1L) transition metal dichalcogenides (TMDs) the valence and conduction bands are spin-split because of the strong spin-orbit interaction. In tungsten-based TMDs the spin-ordering of the conduction band is such that the so-called dark excitons, consisting of electrons and holes with opposite spin orientation, have lower energy than A excitons. The transition from bright to dark excitons involves the scattering of electrons from the upper to the lower conduction band at the K point of the Brillouin zone, with detrimental effects for the optoelectronic response of 1L-TMDs, since this reduces their light emission efficiency. Here, we exploit the valley selective optical selection rules and use two-color helicity-resolved pump-probe spectroscopy to directly measure the intravalley spin-flip relaxation dynamics in 1L-WS

© 2016 American Chemical Society. We studied by broad-band pump-probe spectroscopy the ultrafast optical response of thin copper films covered by a monolayer of graphene. It is demonstrated that graphene protection does not alter the thermo-modulational nonlinearity of copper in the whole visible range. Also, we provide a quantitative validation of a theoretical model for this optical nonlinearity, derived from a semiclassical description of electron thermalization dynamics and subsequent modulation of copper dielectric function from 450 to 700 nm wavelength. Our results extend to the nonlinear domain the capability of graphene-protected copper nanolayers to serve as a low cost optical grade material, with major potential impact on nonlinear plasmonics and metamaterials.

In monolayer (1L) transition metal dichalcogenides (TMDs) the valence and conduction bands are spin-split because of the strong spin-orbit interaction. In tungsten-based TMDs the spin-ordering of the conduction band is such that the so-called dark excitons, consisting of electrons and holes with opposite spin orientation, have lower energy than A excitons. The transition from bright to dark excitons involves the scattering of electrons from the upper to the lower conduction band at the K point of the Brillouin zone, with detrimental effects for the optoelectronic response of 1L-TMDs, since this reduces their light emission efficiency. Here, we exploit the valley selective optical selection rules and use two-color helicity-resolved pump-probe spectroscopy to directly measure the intravalley spin-flip relaxation dynamics in 1L-WS2. This occurs on a sub-ps time scale, and it is significantly dependent on temperature, indicative of phonon-assisted relaxation. Time-dependent ab initio calculations show that intravalley spin-flip scattering occurs on significantly longer time scales only at the K point, while the occupation of states away from the minimum of the conduction band significantly reduces the scattering time. Our results shed light on the scattering processes determining the light emission efficiency in optoelectronic and photonic devices based on 1L-TMDs.

Due to their strong light-matter interaction, monolayer transition metal dichalcogenides (TMDs) have proven to be promising candidates for nonlinear optics and optoelectronics. Here, we characterize the nonlinear absorption of chemical vapour deposition (CVD)-grown monolayer MoSe2 in the 720–810 nm wavelength range. Surprisingly, despite the presence of strong exciton resonances, monolayer MoSe2 exhibits a uniform modulation depth of ∼80 ± 3% and a saturation intensity of ∼2.5 ± 0.4 MW/cm2. In addition, pump-probe spectroscopy is performed to confirm the saturable absorption and reveal the photocarrier relaxation dynamics over hundreds of picoseconds. Our results unravel the unique broadband nonlinear absorptive behavior of monolayer MoSe2 under ultrafast excitation and highlight the potential of using monolayer TMDs as broadband ultrafast optical switches with customizable saturable absorption characteristics.

The recent integration of silicene in field-effect transistors (FET) opened new challenges in the comprehension of the chemical and physical properties of this elusive two-dimensional allotropic form of silicon. Intense efforts have been devoted to the study of the epitaxial Silicene/Ag(111) system in order to elucidate the presence of Dirac fermion in analogy with graphene; strong hybridization effects in silicene superstructures on silver have been invoked as responsible for the disruption of π and π* bands. In this framework, the measured ambipolar effect in silicene-based FET characterized by a relatively high mobility, points out to a complex physics at the silicene-silver interface, demanding for a deeper comprehension of its details on the atomic scale. Here we elucidate the role of the metallic support in determining the physical properties of the Si/Ag interface, by means of optical techniques combined with theoretical calculations of the optical response of the supported system. The silicene/Ag(111) spectra, which turn out to be strongly non-additive, are analyzed in the framework of theoretical density functional based calculations allowing us to single out contributions arising from different localization. Electronic transitions involving silver states are found to provide a huge contribution to the optical absorption of silicene on silver, compatible with a strong Si-Ag hybridization. The results point to a dimensionality-driven peculiar dielectric response of the two-dimensional-silicon/silver interface, which is confirmed by means of Transient-Reflectance spectroscopy. The latter shows a metallic-like carrier dynamics, (both for silicene and amorphous silicon), hence providing an optical demonstration of the strong hybridization arising in silicene/Ag(111) systems.

The absorption spectra of 2D semiconductors are dominated by excitons with binding energy of several hundreds of meV. Nevertheless, even single layers show an appreciable photovoltaic effect and work as the active material in high sensitivity photodetectors, thus indicating some degree of free charge carrier photogeneration. Here, we perform ultrafast transient absorption spectroscopy on monolayer MoS2 in a field-effect transistor configuration. We show that even a moderate in-plane electric field of a few kV cm(-1) can significantly increase the yield of charge carriers from photogenerated hot electron-hole pairs.

Germanium is one of the most appealing candidate for spintronic applications, thanks to its compatibility with the Si platform, the long electron spin lifetime and the optical properties matching the conventional telecommunication window. Electrical spin injection schemes have always been exploited to generate spin accumulations and pure spin currents in bulk Ge. However, it is well known that ferromagnetic injection or detection blocks can introduce parasitic effects at the metal/semiconductor interface, which are still under debate. Here, we exploit the spin-Hall effect to generate a uniform pure spin current in an epitaxial n-doped Ge channel and we detect the electrically-induced spin accumulation, transverse to the injected charge current density, with polar magneto-optical Kerr microscopy at low temperature. We show that a giant spin density up to 200 \textmu m-3 can be achieved at the edges of the Ge channel for a low-voltage applied bias. Such a giant spin density is almost two orders of magnitude larger than the one achievable in III-V semiconductors. We have also characterized the electrically-induced spin voltage as a function of the applied bias and temperature, revealing that the spin-to-charge conversion in bulk Ge is preserved up to 120 K.

We measure exciton dynamics in single-layer MoS2 with unprecedented temporal resolution and we directly extract the characteristic time-scale for the Coulomb screening dynamics, which ranges between 15 and 35 fs.

The non-equilibrium approach to correlated electron systems is often based on the paradigm that different degrees of freedom interact on different timescales. In this context, photo-excitation is treated as an impulsive injection of electronic energy that is transferred to other degrees of freedom only at later times. Here, by studying the ultrafast dynamics of quasi-particles in an archetypal strongly correlated charge-transfer insulator (La2CuO4+delta), we show that the interaction between electrons and bosons manifests itself directly in the photo-excitation processes of a correlated material. With the aid of a general theoretical framework (Hubbard-Holstein Hamiltonian), we reveal that sub-gap excitation pilots the formation of itinerant quasi-particles, which are suddenly dressed by an ultrafast reaction of the bosonic field.

A full exploitation of the unique features of graphene and related 2D materials in micro and nano-scaled optoelectronic devices for high-data rate photonic systems calls for a deep understanding of their fundamental structural, electronic, photophysical properties and fast dynamics. We introduce some advanced spectroscopic techniques developed to this aim, while reviewing their specific potentialities and highlighting recent results. To provide absolute local nanoscale thickness metrology of as-grown 2D materials, Scanning Auger Electron Microspectroscopy has been calibrated. Results obtained for graphene and graphene oxide (GO) are reported, showing sub-monolayer resolution. Ultrafast optical transient absorption spectroscopy, with temporal resolution down to 10fs, unveils the relaxation dynamics of hot electrons in single layer graphene and the formation and radiative recombination via stimulated emission of biexcitons in ultra-narrow, structurally well-defined nanoribbons (GNRs). By recently developed ultrafast Time- and Angle-resolved Photo-Electron Spectroscopy (TR-ARPES) we investigate electronic states and spin dynamics close to the Dirac cone, in graphene and metal chalcogenide topological insulators (TI) under fs strong laser excitation, in view of spintronic applications.