Silicon reactivity at the Ag(111) surface M. Sattaa, S. Colonnab, R. Flamminib, A. Cricentib, F. Ronci*b a CNR-Istituto per lo Studio dei Materiali Nanostrutturati, Dipartimento di Chimica, Università di Roma "La Sapienza", P.le Aldo Moro 5, I-00185, Roma, Italy b CNR-Istituto di Struttura della Materia, Via Fosso del Cavaliere 100, I-00133 Roma, Italy *e-mail: fabio.ronci@ism.cnr.it Keywords: Silicon, silver, silicene, STM, plane-wave DFT Introduction In the last years a large number of papers reported the synthesis of silicene, a 2D silicon allotrope analogue of graphene, on Ag(110) and Ag(111) substrates [1], attracting a large interest in the scientific community. The modelization of silicene on silver substrates is generally based on the assumption of a complete immiscibility between silicon and silver. Recent results, however, revealed that in both cases the silver substrate is significantly altered upon silicon deposition, inducing either substrate reconstructions [2], faceting [3] or domains growth inside the first Ag(111) layer rather than on top of it [4-5]. Results and Discussion In this talk our recently published results on the Si/Ag(111) system [6] will be described. Through a combined DFT and STM study, the basic exchange mechanism between Si and the topmost layer Ag atoms is explained. We provide a description of the nucleation process, demonstrating that the impinging Si atoms can actually penetrate the first silver layer by exchanging position with Ag atoms. Indeed, despite the quite high energy barrier, the Si/Ag exchange process is made possible by exploiting the excess energy released upon the Si atoms adsorption process. Figure 1: Schematic picture describing the silicon atoms adsorption and thermalization processes at the Ag(111) surface Conclusions We demonstrate that Si atoms are embedded and confined in the first Ag(111) layer where they act as seeds for the growth of recessed islands. Our results demonstrate that surface reactivity cannot be neglected when describing the Si/Ag(111) interface formation. References: [1]H. Oughaddou, H. Enriquez, M. R. Tchalala, H. Yildirim, A. J. Mayne, A. Bendounan, G. Dujardin, M. Ait Ali, A. Kara; Silicene, a promising new 2D material; Progr. Surf. Sci.; 90(2015) 46 and references therein. [2]R. Bernard, T. Leoni, A. Wilson, T. Lelaidier, H. Sahaf, E. Moyen, L. Assaud, L. Santinacci, F. Leroy, F. Cheynis, A. Ranguis, H. Jamgotchian, C. Becker, Y. Borensztein, M. Hanbücken, G. Prévot, and L. Masson; Growth of Si ultrathin films on silver surfaces: Evidence of an Ag(110) reconstruction induced by Si; Phys. Rev. B; 88 (2013) 121411. [3]F. Ronci, G. Serrano, P. Gori, A. Cricenti, S. Colonna; Silicon-induced faceting at the Ag(110) surface; Phys. Rev. B; 89 (2014) 115437. [4]J. Sone, T. Yamagami, Y. Aoki, K. Nakatsuji, H. Hirayama; Epitaxial growth of silicene on ultra-thin Ag(111) films; New J. Phys. 16 (2014) 095004. [5]G. Prévot, R. Bernard, H. Cruguel, Y. Borensztein; Monitoring Si growth on Ag(111) with scanning tunneling microscopy reveals that silicene structure involves silver atoms; Appl. Phys. Lett.; 105 (2014) 213106. [6]M Satta, S. Colonna, R. Flammini, A. Cricenti, F. Ronci; Silicon Reactivity at the Ag(111) Surface; Phys. Rev. Lett.; 115 (2015) 026102.