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Hafnium oxide plays an important role as a dielectric material in various thin-film electronic devices such as transistors and resistive or ferroelectric memory. The crystallographic and electronic structure of the hafnia layer often depends critically on its composition and defect structure. Here, we report two novel defect-stabilized polymorphs of substoichiometric HfO

Journal of applied physics 132(6), 064102 (2022). doi:10.1063/5.0098953, Published by American Inst. of Physics, Melville, NY

Hafnium oxide-based resistive random access memory (RRAM) ( ${\mathrm {TiN/HfO}}_{2-{x}}$ /Pt/Au) stacks were irradiated with 1.1-GeV Au ions with fluences between 1010 and 1012 ions/cm2 and evaluated regarding pristine resistance, forming voltage, and data retention. Only for the highest fluence, the resistance of the pristine state and, in turn, the conducting filament electroforming, as well as the reset voltage, increased. Even for fluences as high as 1012 ions/cm2, only a negligible percentage of the tested devices shows event upsets indicating extremely high data retention of hafnium oxide-based RRAM toward high-energy ionizing radiation.

IEEE transactions on nuclear science 68(8), 1542 - 1547 (2021). doi:10.1109/TNS.2021.3085962, Published by IEEE, New York, NY

Low-frequency noise in Y2O3-based resistive random-access memory devices with analog switching is studied at intermediate resistive states and as a function of dc cycling. A universal 1/f(alpha)-type behavior is found, with a frequency exponent of alpha approximate to 1.2 that is independent of the applied reset voltage or the device resistance and is attributed to the intrinsic abundance of oxygen vacancies unique to the structure of yttria. Remarkably, the noise magnitude in the high resistive state systematically decreases through dc training. This effect is attributed to the stabilization of the conductive filament via the consumption of oxygen vacancies, thus reducing the number of active fluctuators in the vicinity of the filament.

The novel thin-film ferroelectric material hafnium oxide has revived the interest into ferroelectric memory concepts, which is due to the fact, that it facilitates CMOS and BEoL compatible integration. A major requirement hereby is the stability of the ferroelectric layer towards ionizing radiation, such as gamma and heavy ion exposure. In this study, we investigate for the first time the influence of heavy ion irradiation on the crystallographic and ferroelectric properties of hafnium oxide based thin films. We show, that up to fluences of 1010 ions/cm2 of Au26+ ions with an energy of 1.635 GeV both the crystallographic and ferroelectric properties of Si:HfO 2 (HSO) and Hf 0.5 Zr 0.5 O 2 (HZO) keep unchanged. For higher dosages, a soft affection can be observed, which is retrieved to be a result of irradiation supported phase transition. The results of this study will help to implement ferroelectric memories into aviation and space applications.

Materials Research Letters 7(3), 117 - 123 (2019). doi:10.1080/21663831.2018.1561535, The HfO2-based resistive random access memory (RRAM) is one of the most promising candidatesfor non-volatile memory applications. The detection and examination of the dynamic behavior ofoxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of theresistive switching (RS) behavior. By using synchrotron radiation based, non-destructive and bulksensitivehard X-ray photoelectron spectroscopy (HAXPES), we demonstrate an operando diagnosticdetection of the oxygen ‘breathing’ behavior at the oxide/metal interface, namely, oxygen migrationbetween HfO2 and TiN during different RS periods. The results highlight the significance ofoxide/metal interfaces in RRAM, even in filament-type devices., Published by Taylor & Francis, London [u.a.]

In this work, analysis and simulation of all experimentally observed switching modes in hafnium oxide based resistive random access memories are carried out using a simplified electrical conduction model. To achieve switching mode variation, two metal-insulator-metal cells with identical stack combination, but varying oxygen stoichiometry of the hafnia layer, namely, stoichiometric vs highly deficient, are considered. To access the individual switching modes, the devices were subjected to a variety of cycling conditions comprising different voltage and current ranges. For modeling the device behavior, a single or two antiserially connected memdiodes (diode with memory) were utilized. In this way, successful compact simulation of unipolar, bipolar, threshold, and complementary resistive switching modes is accomplished confirming the coexistence of two switching mechanisms of opposite polarity as the basis for all observable switching phenomena in this material. We show that only calibration of the outer current-voltage loops with the memdiode model is necessary for predicting the device behavior in the defined region revealing additional information on the switching process. The correspondence of each memdiode device with the conduction characteristics of the individual top and bottom metal-oxide contacts allows one to assess the role played by each interface in the switching process separately. This identification paves the path for a future improvement of the device performance and functionality by means of appropriate interface engineering.

Perovskite oxide materials of the general chemical formula ABO3 are a rich playground for epitaxial stacks of different functional layers for novel device applications. In the example of a tunable metal–insulator–metal ferroelectric varactor (tunable capacitor) made from the highest conducting perovskite SrMoO3 as an electrode and the tunable dielectric Ba0.5Sr0.5TiO3 (BST), we show how the extremely conflicting oxidation potentials can be conciliated in a fully functional heterostructure. Controlling the growth kinetics by the substrate temperature, oxygen pressure, and oxidation time, the formation of the non-conducting Mo6+ states can be effectively suppressed and the BST cation stoichiometry can be tuned. The cumulative impact of the cation nonstoichiometry, epitaxial strain, and oxygen deficiency in the BST films leads to the expansion of their c-axis lattice parameter via the formation of point defects. The dielectric permittivity of 440, the high tunability of 3.5, and the quality factor of 50 are achieved for the varactors at the frequency of 1 GHz. It turns out that the varactor performance is anti-correlated to the tetragonal lattice distortion of BST, which itself is interrelated to the oxidation conditions. The mechanism of the leakage current through oxygen deficient BST layers of the varactors is analyzed within the combined scenarios of the space-charge limited current and Poole–Frenkel field-assisted emission from traps. The achieved high capacitance per unit area of 0.04 pF/μm2 and moderate leakage currents of 0.025 μA/pF make these varactors suitable for applications in microwave microelectronic devices.

Nb₃Sn thin films are promising candidates for future application in superconducting radio frequency cavities due to their low surface resistivity, high critical temperature, and critical field, as compared to bulk niobium, which is the current state of the art. In this paper, we report the deposition of Nb₃Sn thin films by magnetron co-sputtering at the extremely low temperature of 435°C. These thin films show a critical temperature of 16.3 K, a high critical current density of 1.60×10⁵A/cm², and a strong shielding effect. The key to achieving low-temperature growth is the independent kinetic control of Nb and Sn species in the sputtering process. From a technological viewpoint, the low-temperature approach paves the way for the use of Nb₃Sn as a coating in cryogenic efficient copper based cavities, thereby avoiding the detrimental interdiffusion of Cu.

This work investigates the transition from digital to gradual or analog resistive switching in yttrium oxide-based resistive random-access memory devices. It is shown that this transition is determined by the amount of oxygen in the functional layer. A homogeneous reduction of the oxygen content not only reduces the electroforming voltage, allowing for forming-free devices, but also decreases the voltage operation window of switching, thereby reducing intra-device variability. The most important effect as the dielectric becomes substoichiometric by oxygen engineering is that more intermediate (quantized) conduction states are accessible. A key factor for this reproducibly controllable behavior is the reduced local heat dissipation in the filament region due to the increased thermal conductivity of the oxygen depleted layer. The improved accessibility of quantized resistance states results in a semi-gradual switching both for the set and reset processes, as strongly desired for multi-bit storage and for an accurate definition of the synaptic weights in neuromorphic systems. A theoretical model based on the physics of mesoscopic structures describing current transport through a nano-constriction including asymmetric potential drops at the electrodes and non-linear conductance quantization is provided. The results contribute to a deeper understanding on how to tailor materials properties for novel memristive functionalities.

Hafnium oxide- and GeSbTe-based functional layers are promising candidates in material systems for emerging memory technologies. They are also discussed as contenders for radiation-harsh environment applications. Testing the resilience against ion radiation is of high importance to identify materials that are feasible for future applications of emerging memory technologies like oxide-based, ferroelectric, and phase-change random-access memory. Induced changes of the crystalline and microscopic structure have to be considered as they are directly related to the memory states and failure mechanisms of the emerging memory technologies. Therefore, we present heavy ion irradiation-induced effects in emerging memories based on different memory materials, in particular, HfO