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Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties
- Source :
- ACS Applied Materials & Interfaces. 14:1290-1303
- Publication Year :
- 2021
- Publisher :
- American Chemical Society (ACS), 2021.
-
Abstract
- Hafnium oxide plays an important role as a dielectric material in various thin-film electronic devices such as transistors and resistive or ferroelectric memory. The crystallographic and electronic structure of the hafnia layer often depends critically on its composition and defect structure. Here, we report two novel defect-stabilized polymorphs of substoichiometric HfO
Details
- ISSN :
- 19448252 and 19448244
- Volume :
- 14
- Database :
- OpenAIRE
- Journal :
- ACS Applied Materials & Interfaces
- Accession number :
- edsair.doi.dedup.....63e959823adb205932efb10b858f05a9