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Your search keyword '"Static random access memory -- Electric properties"' showing total 6 results
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6 results on '"Static random access memory -- Electric properties"'

2. SRAM FPGA reliability analysis for harsh radiation environments

Author

Ostler, Patrick S., Caffrey, Michael P., Gibelyou, Derrick S., Graham, Paul S., Morgan, Keith S., Pratt, Brian H., Quinn, Heather M., and Wirthlin, Michael J.

Subjects
Digital integrated circuits -- Testing, Digital integrated circuits -- Electric properties, Static random access memory -- Testing, Static random access memory -- Electric properties, Product reliability, Programmable logic array, SRAM, Business, Electronics, Electronics and electrical industries
Published
2009

3. Single-event upsets and multiple-bit upsets on a 45 nm SOI SRAM

Author

Heidel, David F., Marshall, Paul W., Pellish, Jonathan A., Rodbell, Kenneth P., LaBel, Kenneth A., Schwank, James R., Rauch, Stewart E., Hakey, Mark C., Berg, Melanie D., Castaneda, Carlos M., Dodd, Paul E., Friendlich, Mark R., Phan, Anthony D., Seidleck, Christina M., Shaneyfelt, Marty R., and Xapsos, Michael A.

Subjects
Static random access memory -- Electric properties, Static random access memory -- Testing, SRAM, Business, Electronics, Electronics and electrical industries
Published
2009

4. Impact of low-energy proton induced upsets on test methods and rate predictions

Author

Sierawski, Brian D., Pellish, Jonathan A., Reed, Robert A., Schrimpf, Ronald D., Warren, Kevin M., Weller, Robert A., Mendenhall, Marcus H., Black, Jeffrey D., Tipton, Alan D., Xapsos, Michael A., Baumann, Robert C., Deng, Xiaowei, Campola, Michae J., Friendlich, Mark R., Kim, Hak S., Phan, Anthony M., and Seidleck, Christina M.

Subjects
Protons -- Electric properties, Ionization -- Testing, Static random access memory -- Electric properties, Monte Carlo method -- Usage, Extraterrestrial radiation -- Electric properties, SRAM, Business, Electronics, Electronics and electrical industries
Published
2009

6. Integration and reliability of Cu-SiOC interconnect for ArF/90-nm node CMOS technology

Author

Noguchi, Junji, Konishi, Nobuhiro, Sato, Kiyohiko, Hotta, Syoji, Aoki, Hideo, Oshima, Takayuki, Ishikawa, Kensuke, Uno, Syouichi, and Saito, Tatsuyuki

Subjects
Interface circuits -- Testing, Static random access memory -- Product development, Static random access memory -- Electric properties, Complementary metal oxide semiconductors -- Product development, Complementary metal oxide semiconductors -- Testing, SRAM, Business, Electronics, Electronics and electrical industries
Abstract

Five levels of Cu-SiOC interconnects for ArF/90-nm node technology with 0.992-micrometer(super 2) SRAM cells were successfully investigated further discussing its integration and reliability issues. Chemical mechanical polishing (CMP) delamination, SiOC damage and electrical shorts through the bottom interface of Cu interconnects were improved.

Published
2004

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