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The novel quaternary thiogermanate Li4CdGe2S7 (tetralithium cadmium digermanium heptasulfide) was discovered from a solid-state reaction at 750 °C. Single-crystal X-ray diffraction data were collected and used to solve and refine the structure. Li4CdGe2S7 is a member of the small, but growing, class of I4–II–IV2–VI7 diamond-like materials. The compound adopts the Cu5Si2S7 structure type, which is a derivative of lonsdaleite. Crystallizing in the polar space group Cc, Li4CdGe2S7 contains 14 crystallographically unique ions, all residing on general positions. Like all diamond-like structures, the compound is built of corner-sharing tetrahedral units that create a relatively dense three-dimensional assembly. The title compound is the major phase of the reaction product, as evidenced by powder X-ray diffraction and optical diffuse reflectance spectroscopy. While the compound exhibits a second-harmonic generation (SHG) response comparable to that of the AgGaS2 (AGS) reference material in the IR region, its laser-induced damage threshold (LIDT) is over an order of magnitude greater than AGS for λ = 1.064 µm and τ = 30 ps. Bond valence sums, global instability index, minimum bounding ellipsoid (MBE) analysis, and electronic structure calculations using density functional theory (DFT) were used to further evaluate the crystal structure and electronic structure of the compound and provide a comparison with the analogous I2–II–IV–VI4 diamond-like compound Li2CdGeS4. Li4CdGe2S7 appears to be a better IR nonlinear optical (NLO) candidate than Li2CdGeS4 and one of the most promising contenders to date. The exceptional LIDT is likely due, at least in part, to the wider optical bandgap of ∼3.6 eV.

The new, quaternary diamond-like semiconductor (DLS) Cu4MnGe2S7 was prepared at high-temperature from a stoichiometric reaction of the elements under vacuum. Single crystal X-ray diffraction data were used to solve and refine the structure in the polar space group Cc. Cu4MnGe2S7 features [Ge2S7]6- units and adopts the Cu5Si2S7 structure type that can be considered a derivative of the hexagonal diamond structure. The DLS Cu2MnGeS4 with the wurtz-stannite structure was similarly prepared at a lower temperature. The achievement of relatively phase-pure samples, confirmed by X-ray powder diffraction data, was nontrival as differential thermal analysis shows an incongruent melting behaviour for both compounds at relatively high temperature. The dark red Cu2MnGeS4 and Cu4MnGe2S7 compounds exhibit direct optical bandgaps of 2.21 and 1.98 eV, respectively. The infrared (IR) spectra indicate potentially wide windows of optical transparency up to 25 μm for both materials. Using the Kurtz-Perry powder method, the second-order nonlinear optical susceptibility, χ(2), values for Cu2MnGeS4 and Cu4MnGe2S7 were estimated to be 16.9 ± 2.0 pm V-1 and 2.33 ± 0.86 pm V-1, respectively, by comparing with an optical-quality standard reference material, AgGaSe2 (AGSe). Cu2MnGeS4 was found to be phase matchable at λ = 3100 nm, whereas Cu4MnGe2S7 was determined to be non-phase matchable at λ = 1600 nm. The weak SHG response of Cu4MnGe2S7 precluded phase-matching studies at longer wavelengths. The laser-induced damage threshold (LIDT) for Cu2MnGeS4 was estimated to be ∼0.1 GW cm-2 at λ = 1064 nm (pulse width: τ = 30 ps), while the LIDT for Cu4MnGe2S7 could not be ascertained due to its weak response. The significant variance in NLO properties can be reasoned using the results from electronic structure calculations.

The new quaternary thiosilicate, Li2PbSiS4 (dilithium lead silicon tetrasulfide), was prepared in an evacuated fused-silica tube via high-temperature, solid-state synthesis at 800 °C, followed by slow cooling. The crystal structure was solved and refined using single-crystal X-ray diffraction data. By strict definition, the title compound crystallizes in the stannite structure type; however, this type of structure can also be described as a compressed chalcopyrite-like structure. The Li+ cation lies on a crystallographic fourfold rotoinversion axis, while the Pb2+ and Si4+ cations reside at the intersection of the fourfold rotoinversion axis with a twofold axis and a mirror plane. The Li+ and Si4+ cations in this structure are tetrahedrally coordinated, while the larger Pb2+ cation adopts a distorted eight-coordinate dodecahedral coordination. These units join together via corner- and edge-sharing to create a dense, three-dimensional structure. Powder X-ray diffraction indicates that the title compound is the major phase of the reaction product. Electronic structure calculations, performed using the full potential linearized augmented plane wave method within density functional theory (DFT), indicate that Li2PbSiS4 is a semiconductor with an indirect bandgap of 2.22 eV, which compares well with the measured optical bandgap of 2.51 eV. The noncentrosymmetric crystal structure and relatively wide bandgap designate this compound to be of interest for IR nonlinear optics.

The novel diamond-like Li4CdSn2S7 possesses many outstanding attributes that enable it to be a new, well-rounded front-runner among infrared (IR) nonlinear-optical materials, especially for high-in...

The isostructural crystal structures of Cu4FeGe2S7 and Cu4CoGe2S7 were solved and refined. All the metal cations form MS4 tetra­hedra and share corners to create a three-dimensional, non-centrosymmetric structure., The quaternary thio­germanates Cu4FeGe2S7 (tetra­copper iron digermanium hepta­sulfide) and Cu4CoGe2S7 (tetra­copper cobalt digermanium hepta­sulfide) were prepared in evacuated fused-silica ampoules via high-temperature, solid-state synthesis using stoichiometric amounts of the elements at 1273 K. These isostructural compounds crystallize in the Cu4NiSi2S7 structure type, which can be considered as a superstructure of cubic diamond or sphalerite. The monovalent (Cu+), divalent (Fe2+ or Co2+) and tetra­valent (Ge4+) cations adopt tetra­hedral geometries, each being surrounded by four S2− anions. The divalent cation and one of the sulfide ions lie on crystallographic twofold axes. These tetra­hedra share corners to create a three-dimensional framework structure. All of the tetra­hedra align along the same crystallographic direction, rendering the structure non-centrosymmetric and polar (space group C2). Analysis of X-ray powder diffraction data revealed that the structures are the major phase of the reaction products. Thermal analysis indicated relatively high melting temperatures, near 1273 K.

The new, quaternary diamond-like semiconductor (DLS) Cu

The new quaternary thiosilicate, Li

The series of quaternary rare-earth phosphides REMnCuP2 (RE = Y, La–Nd, Sm, Gd–Tm, Lu), which had previously been limited to the Yb member, has been prepared by reaction of the elements at 800 °C. These phosphides adopt the CaAl2Si2-type structure (trigonal, space group P 3 ¯ m 1 , Z = 1) with Mn and Cu atoms disordered over the tetrahedral M sites within [M2P2] slabs. However, single-crystal X-ray diffraction studies, carried out on some of these members (RE = Tb, Dy, Er, Tm), provide evidence for an interstitial octahedral site being partially occupied by Cu atoms, resulting in the nonstoichiometric formulation REMnCu1+xP2 (x = 0.10–0.16). A second polymorph of LaMnCuP2 adopting the BaCu2S2-type structure (orthorhombic, space group Pnma, Z = 4) was also identified in the course of these investigations. Electronic structure calculations on a ordered superstructure model of YMnCuP2 indicate the absence of a band gap.

Single-phase polycrystalline powders of Sr1–xSbxHfSe3 (x = 0, 0.005, 0.01), a new member of the chalcogenide perovskites, were synthesized using a combination of high temperature solid-state reaction and mechanical alloying approaches. Structural analysis using single-crystal as well as powder X-ray diffraction revealed that the synthesized materials are isostructural with SrZrSe3, crystallizing in the orthorhombic space group Pnma (#62) with lattice parameters a = 8.901(2) A; b = 3.943(1) A; c = 14.480(3) A; and Z = 4 for the x = 0 composition. Thermal conductivity data of SrHfSe3 revealed low values ranging from 0.9 to 1.3 W m–1 K–1 from 300 to 700 K, which is further lowered to 0.77 W m–1 K–1 by doping with 1 mol % Sb for Sr. Electronic property measurements indicate that the compound is quite insulating with an electrical conductivity of 2.9 S/cm at 873 K, which was improved to 6.7 S/cm by 0.5 mol % Sb doping. Thermopower data revealed that SrHfSe3 is a p-type semiconductor with thermopower values rea...

The quaternary rare-earth sulfides Nd7FeInS13 and Pr7CoInS13 were prepared by reactions of the elements at 1050 °C. Single-crystal X-ray diffraction revealed that they adopt a new orthorhombic structure type (space group Pnma, Z =4; a =11.2079(5) A, b =3.9686(2) A, and c =44.1642(18) A for Nd7FeInS13; a =11.2303(6) A, b =3.9876(2) A, and c =44.506(2) A for Pr7CoInS13). The structure contains two types of one-dimensional chains extending along the b-direction: corner-sharing tetrahedra centred by transition-metal atoms (M = Fe, Co), and edge-sharing octahedra centred by In atoms. The RE atoms (RE = Nd, Pr) are coordinated in monocapped or bicapped trigonal prismatic geometry. In terms of these RE-centred trigonal prisms, the structure of Nd7FeInS13 and Pr7CoInS13 can be considered to be built up of fragments of the structures of Y2HfS5 and RE2S3 (β-Cr3C2-type). Magnetic measurements on Pr7CoInS13 indicated paramagnetic behaviour with no transitions down to 2 K.

Two new biaxial, diamond-like semiconductors, Li2CdGeSe4 and Li2CdSnSe4, were prepared via high-temperature, solid-state synthesis. Single crystal X-ray diffraction and X-ray powder diffraction coupled with Rietveld refinement were used to refine the crystal structures and assess the phase purity, respectively. Both compounds adopt the lithium cobalt(II) silicate structure type. Strong second-order nonlinear optical (NLO) susceptibility, phase matchability, relatively high thermal stability, and excellent transparency deem both materials potential infrared (IR) NLO candidates. Li2CdGeSe4 and Li2CdSnSe4 display optical bandgaps of approximately 2.5 and 2.2 eV, respectively. Li2CdSnSe4 exhibits a strong, red-light emission under 1064 nm excitation, allowing the compound to release energy that accumulates by two-photon absorption under Nd:YAG laser radiation. Therefore, Li2CdSnSe4 shows a high laser-induced damage threshold (LIDT) of 0.7 GW cm−2. This special phenomenon is remarkable and may open a new avenue in searching for promising IR NLO materials with large LIDTs.

Several compositions of the Cu3NbS4−xSex (x = 0, 0.1, 0.2, 0.4, 0.6, 0.8, and 4) series were synthesized through combination of the elements using conventional solid-state reactions. X-ray powder diffraction patterns suggest that the synthesized polycrystalline powder samples are isostructural to sulvanite (Cu3VS4). However, plotting the refined lattice parameters as well as the measured “true” density as a function of Se content (x) showed deviations from linearity, suggesting that the Cu3NbS4−xSex series is not a “true” solid solution. Differential scanning calorimetry data showed that all compounds incongruently melt at ∼1100 K and recrystallize with a minor impurity phase. Optical diffuse reflectance UV/Vis/NIR spectroscopy revealed a nearly linear contraction of the optical band gap with increasing Se content. The direct band gap decreases from 2.53 eV for x = 0.1 to 2.43 eV for x = 0.8. Electronic transport data indicate p-type semiconducting behavior for all samples. Thermal conductivity data showed a rather surprising trend, with the substituted compositions exhibiting higher thermal conductivity than the two end members.

The four ternary arsenides ATt3As3 (A=K, Rb; Tt=Ge, Sn) were obtained by reaction of the elements at 600–650 °C. They adopt an orthorhombic structure (space group Pnma, Z=4, with cell parameters ranging from a=9.9931(11) A, b=3.7664(4) A, c=18.607(2) A for KGe3As3 to a=10.3211(11) A, b=4.0917(4) A, c=19.570(2) A for RbSn3As3) containing corrugated [Tt3As3] layers built from Tt-centred trigonal pyramids and tetrahedra forming five-membered rings decorated with As handles. They can be considered to be Zintl phases with Tt atoms in +4, +3, and +1 oxidation states. Band structure calculations predict that these compounds are semiconductors with narrow band gaps (0.71 eV in KGe3As3, 0.50 eV in KSn3As3).

Eight new compounds with a general formula Ca14–xRExMnSb11 (RE = La–Nd, Sm, Gd–Dy; x ≈ 1) were synthesized by the molten flux method and their structures were established via single-crystal X-ray diffraction. The overarching goal of this study was to investigate the effect of electron doping, via substitution of RE3+ at Ca2+ sites, on the crystal structure and physical properties of Ca14MnSb11, which is a candidate for thermoelectric applications. All studied phases are isostructural, and crystallize in the tetragonal body-centered space group I41/acd (Ca14AlSb11 structure type, Pearson index tI208). The structure is made up of MnSb410– tetrahedra, randomly mixed Ca2+ and RE3+ cations, Sb3– anions, and linear Sb37– polyanions. Comprehensive structural work confirms high rare-earth metal content with Ca2+/RE3+ randomly mixed on all four cation sites, with the caveat that the larger RE atoms (La–Nd) prefer to occupy the Ca2 site, while the smaller RE atoms (Sm, Gd, Tb, and Dy) preferably occupy the Ca1 site. Nearly phase-pure polycrystalline samples have been synthesized using solid-state reactions, and have been used for physical property measurements. The resistivities of the bulk Ca14–xRExMnSb11 (RE = La–Nd, Sm, Gd; x ≈ 1) samples reveal semiconducting behavior, consistent with the notion of electron doping in the parent p-type Ca14MnSb11 material. Magnetic susceptibilities suggest complex magnetic ordering at temperatures below ca. 50 K, likely originating from coupling between two or more magnetic sub-lattices.

Single-phase polycrystalline powders of Sr

The series of quaternary sulfides with general formula Ln2CuMS5 (Ln=La, Ce; M=Sb, Bi) have been synthesized by solid-state reactions. Three representative members have been structurally characterized by single-crystal X-ray diffraction. La2CuSbS5 crystallizes in a new structure type (space group Ima2 (no. 46), Z=4, a=13.401(2) A, b=7.592(1) A, c=7.598(1) A, V=773.1(3) A3). The bismuth analogs of composition La2CuBiS5 and Ce2CuBiS5 crystallize with the La2CuInSe5 structure type (space group Pnma (no. 62), Z=4). Lattice parameters for La2CuBiS5: a=11.9213(5) A, b=3.9967(2) A, c=17.0537(8) A, V=812.56(7) A3; lattice parameters for Ce2CuBiS5: a=11.9179(15) A, b=3.9596(5) A, c=16.955(2) A, V=800.13(17) A3). The similarities and the differences between the two structures are discussed. Electronic structure calculations for La2CuSbS5 and La2CuBiS5 are also presented; they suggest semiconducting behavior with energy gaps exceeding 1.7 eV.

Three new Zintl phases, Na11Ca2Al3Sb8, Na4CaGaSb3, and Na15Ca3In5Sb12, have been synthesized by solid-state reactions, and their structures have been determined by single-crystal X-ray diffraction. Na11Ca2Al3Sb8 crystallizes with its own structure type (Pearson index oP48) with the primitive orthorhombic space group Pmn21 (No. 31). The structure is best viewed as [Al3Sb8]15– units of fused AlSb4 tetrahedra, a novel type of Zintl ion, with Na+ and Ca2+ cations that solvate them. Na4CaGaSb3 also crystallizes in its own type with the primitive monoclinic space group Pc (No. 7; Pearson index mP36), and its structure boasts one-dimensional [GaSb3]6– helical chains of corner-shared GaSb4 tetrahedra. The third new compound, Na15Ca3In5Sb12, crystallizes with the recently reported K2BaCdSb2 structure type (space group Pmc21; Pearson index oP12). The Na15Ca3In5Sb12 structure is based on polyanionic layers made of corner-shared InSb4 tetrahedra. Approximately one-sixth of the In sites are vacant in a statistical man...

Crystal structure of the new ternary antimonide Y 3 Ni 6 Sb 5 was investigated using X-ray single crystal data: own type of structure, space group P 2 1 / m , a = 1.06358(6) nm, b = 0.42030(3) nm, c = 1.26520(9), β = 113.326(3)°, Z = 2, R F = 0.055, wR F = 0.063 for 1341 independent reflections and 98 variable parameters. Isotypic compounds Gd 3 Ni 6 Sb 5 and Tb 3 Ni 6 Sb 5 were synthesized. Magnetic and electric transport properties were studied in the temperature range above 5 K. Y 3 Ni 6 Sb 5 is a temperature independent Pauli type paramagnet. The Gd 3 Ni 6 Sb 5 compound orders ferromagnetically at T C = 8 K, whereas the Tb 3 Ni 6 Sb 5 homologue is an antiferromagnet at T N –5 K. The onset of magnetic ordering is also proved by the electrical resistivity measurements. The analysis of the resistivity, ρ ( T ), measurements for Y 3 Ni 6 Sb 5 resulted in a Debye temperature Θ D = 135 K.

Reactions of the elements at high temperature resulted in the quaternary arsenides KCdGeAs2 (650 °C) and RbCdGeAs2 (600 °C). Single-crystal X-ray diffraction analysis reveals that they adopt a new triclinic structure type (space group P1̅, Pearson symbol aP20, Z = 4; a = 8.0040(18) Å, b = 8.4023(19) Å, c = 8.703(2) Å, α = 71.019(3)°, β = 75.257(3)°, γ = 73.746(3)° for KCdGeAs2; a = 8.2692(13) Å, b = 8.4519(13) Å, c = 8.7349(13) Å, α = 71.163(2)°, β = 75.601(2)°, γ = 73.673(2)° for RbCdGeAs2). Two-dimensional anionic layers [CdGeAs2](-) are separated by A(+) cations and are built from ethane-like Ge2As6 units forming infinite chains connected via three- and four-coordinated Cd atoms. Being Zintl phases, these compounds satisfy charge balance and are expected to be semiconducting, as confirmed by band structure calculations on KCdGeAs2, which reveal a band gap of 0.8 eV. KCdGeAs2 is diamagnetic.

Three series of quaternary rare-earth transition-metal pnictides REMM′Pn2 (M=Cu, Ag; M′=Zn; Pn=P, As) have been prepared by reaction of the elements at 800 °C, with crystal growth promoted through the addition of iodine. The extent of RE substitution is broad in these series: RECuZnAs2 (RE=Y, La Nd, Sm, Gd–Lu), REAgZnP2 (RE=La–Nd, Sm, Gd–Dy), and REAgZnAs2 (RE=La Nd, Sm, Gd Dy). Powder and single-crystal X-ray diffraction analysis revealed that they adopt the trigonal CaAl2Si2-type structure (space group P 3 ¯ m1, Z=1), in which Cu or Ag atoms are disordered with Zn atoms over the unique tetrahedrally coordinated transition-metal site. Magnetic measurements indicated Curie–Weiss behavior for several members of the RECuZnAs2 and REAgZnP2 series. Core-line X-ray photoelectron spectra (XPS) collected on some RECuZnAs2 members corroborate the charge assignment deduced by the Zintl concept for these compounds, (RE3+)(M1+)(Zn2+)(Pn3−)2. Optical diffuse reflectance spectra and valence band XPS spectra established that these compounds are small band-gap semiconductors (up to ~0.8 eV in REAgZnP2) or semimetals (RECuZnAs2). Band structure calculations also support this electronic structure and indicate that the band gap can be narrowed through appropriate chemical substitution (RE=smaller atoms, M=Cu, and Pn=As).

Six series of quaternary rare-earth transition-metal chalcogenides RE3MGaCh7 (M=Fe, Co, Ni; Ch=S, Se), comprising 33 compounds in total, have been prepared by reactions of the elements at 1050 °C (for the sulphides) or 900 °C (for the selenides). They adopt noncentrosymmetric hexagonal structures (ordered Ce3Al1.67S7-type, space group P63, Z=2) with cell parameters in the ranges of a=9.5–10.2 A and c=6.0–6.1 A for the sulphides and a=10.0–10.5 A and c=6.3–6.4 A for the selenides as refined from powder X-ray diffraction data. Single-crystal structures were determined for five members of the sulphide series RE3FeGaS7 (RE=La, Pr, Tb) and RE3CoGaS7 (RE=La, Tb). The highly anisotropic crystal structures consist of one-dimensional chains of M-centred face-sharing octahedra and stacks of Ga-centred tetrahedra all pointing in the same direction. Magnetic measurements on the sulphides reveal paramagnetic behaviour in some cases and long-range antiferromagnetic behaviour with low Neel temperatures (15 K or lower) in others. Ga L-edge XANES spectra support the presence of highly cationic Ga tetrahedral centres with a tendency towards more covalent Ga–Ch character on proceeding from the sulphides to the selenides. Band structure calculations on La3FeGaS7 indicate that the electronic structure is dominated by Fe 3d-based states near the Fermi level.

Six quaternary rare-earth-containing sulphides RE3MInS7 (M=Fe, Co, Ni) have been prepared by reactions of the elements at 1050–1150 °C. They are the first examples of chalcogenides RE3MM'Ch7 adopting related La3CuSiS7- or ordered Ce3Al1.67S7-type structures in which the M' component is indium. They crystallize in the noncentrosymmetric hexagonal space group P63 with Z=2 and cell parameters in the ranges of a=9.95–10.15 A and c=6.25–6.29 A for RE3FeInS7 (RE=La–Pr), RE3CoInS7 (RE=La, Ce), and La3NiInS7. The crystal structure consists of parallel chains of face-sharing M-centred octahedra and stacks of In-centred tetrahedra, all pointing in the same polar direction, with seven-coordinate La atoms in the intervening spaces. X-ray photoelectron spectra support the valence assignments implied by the formulation (RE3+)3(M2+)(In3+)(S2−)7. Magnetic measurements are suggestive of antiferromagnetic coupling between the M moments. Band structure calculations reveal that a band gap of 0.25 eV is present in La3FeInS7, whereas the increased electron count in La3CoInS7 and La3NiInS7 causes the Fermi level to cut narrow bands.

The ternary pnictides Rb4Zn7As7 and Rb7Mn12Sb12 and their quaternary derivatives Rb4Mn3.5Zn3.5Sb7 and Rb7Mn4Cd8Sb12 have been prepared by reactions of the elements at 600 °C. They crystallize in two new structure types: orthorhombic Rb4Zn7As7-type (space group Cmcm, Z = 4; a = 4.1883(4) A, b = 24.844(2) A, c = 17.6056(17) A for Rb4Zn7As7; a = 4.3911(8) A, b = 26.546(5) A, c = 18.743(4) A for Rb4Mn3.5Zn3.5Sb7) and monoclinic Rb7Mn12Sb12-type (space group C2/m, Z = 2; a = 26.544(12) A, b = 4.448(2) A, c = 16.676(8) A, β = 103.183(8)° for Rb7Mn12Sb12; a = 27.009(4) A, b = 4.5752(7) A, c = 16.727(3) A, β = 103.221(2)° for Rb7Mn4Cd8Sb12). These related structures contain corrugated anionic layers built up by connecting ribbons of edge-sharing tetrahedra in a zigzag-like manner with chains of Mn-centered square pyramids located at the hinges. Homoatomic pnicogen–pnicogen bonding occurs in the form of Pn2 pairs. The compounds are formally deficient by one electron per formula unit, as confirmed by band structure...

The CaCu4P2-type pnictides EuAg4As2 and EuAg4Sb2 both contain stable divalent europium. Temperature dependent magnetic susceptibility measurements revealed experimental magnetic moments of 7.91(1) and 8.00(1) μB/Eu atom for the arsenide and antimonide, respectively. This is supported by 151Eu Mossbauer spectra which show isomer shifts of −11.33(1) (EuAg4As2) and −11.71(1) mm/s (EuAg4Sb2). Both pnictides show antiferromagnetic ordering below Neel temperatures of 14.9(5) (EuAg4As2) and 11.0(5) K (EuAg4Sb2). The antiferromagnetic ground state is only stable at low field strength. Metamagnetic transitions occur at critical field strengths of 4.4 (arsenide) and 2.4 kOe (antimonide) with saturation near 7 μB at 80 kOe and 5 K, indicating full parallel spin alignment. This is expressed by large magnetic hyperfine fields of 27.6(1) and 26.2(1) T at the europium nuclei of EuAg4As2 and EuAg4Sb2, respectively. 121Sb data of EuAg4Sb2 show a transferred hyperfine field of 9.8(2) T.

Through arc-melting reactions of the elements and annealing at 800 °C, the ternary rare-earth germanides RE 3 Ru 2 Ge 3 and RE 3 Ir 2 Ge 3 have been prepared for most of the smaller RE components ( RE =Y, Gd–Tm, Lu). In the iridium-containing reactions, the new phases RE 2 IrGe 2 were also generally formed as by-products. Powder X-ray diffraction revealed orthorhombic Hf 3 Ni 2 Si 3 -type structures (space group Cmcm , Z =4) for RE 3 M 2 Ge 3 ( M =Ru, Ir) and monoclinic Sc 2 CoSi 2 -type structures (space group C 2/ m , Z =4) for RE 2 IrGe 2 . Full crystal structures were determined by single-crystal X-ray diffraction for all members of RE 3 Ru 2 Ge 3 ( a =4.2477(6) A, b =10.7672(16) A, c =13.894(2) A for RE =Y; a =4.2610(3)–4.2045(8) A, b =10.9103(8)–10.561(2) A, c =14.0263(10)–13.639(3) A in the progression of RE from Gd to Lu) and for Tb 3 Ir 2 Ge 3 ( a =4.2937(3) A, b =10.4868(7) A, c =14.2373(10) A). Both structures can be described in terms of CrB- and ThCr 2 Si 2 -type slabs built from Ge-centred trigonal prisms. However, band structure calculations on Y 3 Ru 2 Ge 3 support an alternative description for RE 3 M 2 Ge 3 based on [ M 2 Ge 3 ] layers built from linked M Ge 4 tetrahedra, which emphasizes the strong M –Ge covalent bonds present. The temperature dependence of the electrical resistivity of RE 3 Ru 2 Ge 3 generally indicates metallic behaviour but with low-temperature transitions visible for some members ( RE =Gd, Tb, Dy) that are probably associated with magnetic ordering of the RE atoms. Anomalously, Y 3 Ru 2 Ge 3 exhibits semiconductor-like behaviour of uncertain origin. Magnetic measurements on Dy 3 Ru 2 Ge 3 reveal antiferromagnetic ordering at 3 K and several unusual field-dependent transitions suggestive of complex spin reorientation processes.

Dirubidium pentacadmium tetraarsenide, Rb2Cd5As4, dirubidium pentazinc tetraantimonide, Rb2Zn5Sb4, and the solid-solution phase dirubidium pentacadmium tetra(arsenide/antimonide), Rb2Cd5(As,Sb)4[or Rb2Cd5As3.00(1)Sb1.00(1)], have been prepared by direct reaction of the component elements at high temperature. These compounds are charge-balanced Zintl phases and adopt the orthorhombic K2Zn5As4-type structure (Pearson symboloC44), featuring a three-dimensional [M5Pn4]2−framework [M= Zn or Cd;Pnis a pnicogen or Group 15 (Group V) element] built of linkedMPn4tetrahedra, and large channels extending along thebaxis which host Rb+cations. The As and Sb atoms in Rb2Cd5(As,Sb)4are randomly disordered over the two available pnicogen sites. Band-structure calculations predict that Rb2Cd5As4is a small-band-gap semiconductor and Rb2Zn5Sb4is a semimetal.

Ten quaternary arsenides AM(1.5)Tt(0.5)As2 (A = Na, K, Rb; M = Zn, Cd; Tt = Si, Ge, Sn) have been prepared by stoichiometric reactions of the elements at 600-650 °C. Seven of them (NaZn(1.5)Si(0.5)As2, NaZn(1.5)Ge(0.5)As2, NaZn(1.5)Sn(0.5)As2, NaCd(1.5)Sn(0.5)As2, KZn(1.5)Sn(0.5)As2, KCd(1.5)Sn(0.5)As2, RbCd(1.5)Sn(0.5)As2) adopt the trigonal CaAl2Si2-type structure (Pearson symbol hP5, space group P3m1, Z = 1, a = 4.0662(3)-4.4263(7) Å, c = 7.4120(5)-8.4586(14) Å), whereas the remaining three (KZn(1.5)Si(0.5)As2, KZn(1.5)Ge(0.5)As2, RbZn(1.5)Ge(0.5)As2) adopt the tetragonal ThCr2Si2-type structure (Pearson symbol tI10, space group I4/mmm, Z = 2, a = 4.0613(10)-4.1157(5) Å, c = 14.258(3)-14.662(2) Å). Both structure types contain anionic [M(1.5)Tt(0.5)As2] slabs that are built from edge-sharing tetrahedra and that stack alternately with nets of A cations. A structure map delineates the formation of these structure types for AM(1.5)Tt(0.5)As2 as a function of simple radius ratios. Although these arsenides have charge-balanced formulations, band structure calculations on NaZn(1.5)Tt(0.5)As2 (Tt = Si, Ge, Sn) indicate that semimetallic behavior is predicted as a result of overlap of the valence and conduction bands.

The ternary rare-earth zinc arsenides RE Zn 2 As 3 ( RE =La–Pr) have been prepared by reactions of the elements at 800 °C. They adopt new tetragonal structure types, with the La member (space group I 4/ mmm , Z =4, a =4.1133(2) A, c =32.1246(14) A) differing from the Ce and Pr members (space group P 4/ nmm , Z =2, a =4.0804(6)–4.0534(12) A, c =16.089(5)–16.059(10) A, respectively) in the disposition of RE -centred square antiprisms on opposite sides of square As nets. The structures contain thick anionic slabs, built from edge-sharing ZnAs 4 tetrahedra, that can be considered either as stackings of three PbO-type layers or as fragments of the fluorite-type structure. These slabs are deficient in Zn and are reminiscent of the same features in binary arsenide Zn 3 As 2 . LaZn 2 As 3 exhibits temperature-independent paramagnetism whereas CeZn 2 As 3 follows modified Curie–Weiss behavior consistent with Ce 3+ species but with no occurrence of long-range ordering.

Construction of the isothermal section in the metal-rich portion (67 atom % P) of the Mo-Fe-P phase diagram at 800 °C has led to the identification of two new ternary phases: (Mo(1-x)Fe(x))(2)P (x = 0.30-0.82) and (Mo(1-x)Fe(x))(3)P (x = 0.10-0.15). The occurrence of a Co(2)Si-type ternary phase (Mo(1-x)Fe(x))(2)P, which straddles the equiatomic composition MoFeP, is common to other ternary transition-metal phosphide systems. However, the ternary phase (Mo(1-x)Fe(x))(3)P is unusual because it is distinct from the binary phase Mo(3)P, notwithstanding their similar compositions and structures. The relationship has been clarified through single-crystal X-ray diffraction studies on Mo(3)P (α-V(3)S-type, space group I42m, a = 9.7925(11) Å, c = 4.8246(6) Å) and (Mo(0.85)Fe(0.15))(3)P (Ni(3)P-type, space group I4, a = 9.6982(8) Å, c = 4.7590(4) Å) at -100 °C. Representation in terms of nets containing fused triangles provides a pathway to transform these closely related structures through twisting. Band structure calculations support the adoption of these structure types and the site preference of Fe atoms. Electrical resistivity measurements on (Mo(0.85)Fe(0.15))(3)P reveal metallic behavior but no superconducting transition.

The pnictides RE(2)Mn(3)Cu(9)Pn(7) (Pn = P, As) have been prepared by stoichiometric reaction of the elements at 800 °C. They are quaternary ordered variants of the hexagonal Zr(2)Fe(12)P(7)-type structure (Pearson symbol hP21, space group P6, Z = 1; a = 9.6444(3)-9.5970(7) Å, c = 3.9027(1)-3.7761(3) Å for RE(2)Mn(3)Cu(9)P(7) (RE = La-Nd, Sm, Gd-Dy); a = 9.9376(6)-9.9130(3) Å, c = 4.0194(2)-3.9611(1) Å for RE(2)Mn(3)Cu(9)As(7) (RE = La-Nd)). Of the four possible sites available for the transition metal, the square pyramidal site (CN5) is occupied preferentially by Mn atoms, whereas the three tetrahedral sites (CN4) are occupied by Cu atoms. On proceeding to smaller RE members in the RE(2)Mn(3)Cu(9)Pn(7) series, one of the transition-metal-centered polyhedra (Cu1) tends to become less distorted, while the remaining three (Cu2, Cu3, Mn4) become more distorted. Band structure calculations on La(2)Mn(3)Cu(9)P(7) confirm that Mn-P and Cu-P contacts provide the strongest bonding interactions. Electrical resistivity measurements on Ce(2)Mn(3)Cu(9)P(7) reveal metallic behavior with transitions at 165 and 18 K, probably of magnetic origin.

Eight new compounds with a general formula Ca14–xRExMnSb11 (RE = La–Nd, Sm, Gd–Dy; x ≈ 1) were synthesized by the molten flux method and their structures were established via single-crystal X-ray diffraction. The overarching goal of this study was to investigate the effect of electron doping, via substitution of RE3+ at Ca2+ sites, on the crystal structure and physical properties of Ca14MnSb11, which is a candidate for thermoelectric applications. All studied phases are isostructural, and crystallize in the tetragonal body-centered space group I41/acd (Ca14AlSb11 structure type, Pearson index tI208). The structure is made up of MnSb410– tetrahedra, randomly mixed Ca2+ and RE3+ cations, Sb3– anions, and linear Sb37– polyanions. Comprehensive structural work confirms high rare-earth metal content with Ca2+/RE3+ randomly mixed on all four cation sites, with the caveat that the larger RE atoms (La–Nd) prefer to occupy the Ca2 site, while the smaller RE atoms (Sm, Gd, Tb, and Dy) preferably occupy the Ca1 site. Nearly phase-pure polycrystalline samples have been synthesized using solid-state reactions, and have been used for physical property measurements. The resistivities of the bulk Ca14–xRExMnSb11 (RE = La–Nd, Sm, Gd; x ≈ 1) samples reveal semiconducting behavior, consistent with the notion of electron doping in the parent p-type Ca14MnSb11 material. Magnetic susceptibilities suggest complex magnetic ordering at temperatures below ca. 50 K, likely originating from coupling between two or more magnetic sub-lattices.

Crystals of Ba7Al4Sb9 (I), Ba7Ga4P9 (II), and Ba7Ga4As9 (III) are prepared by melting the respective elements in molten Al or Pb fluxes (evacuated silica tubes, 960 °C, 20 h (Al flux) or 40 h (Pb flux)).

The four ternary arsenides ATt3As3 (A=K, Rb; Tt=Ge, Sn) were obtained by reaction of the elements at 600–650 °C. They adopt an orthorhombic structure (space group Pnma, Z=4, with cell parameters ranging from a=9.9931(11) A, b=3.7664(4) A, c=18.607(2) A for KGe3As3 to a=10.3211(11) A, b=4.0917(4) A, c=19.570(2) A for RbSn3As3) containing corrugated [Tt3As3] layers built from Tt-centred trigonal pyramids and tetrahedra forming five-membered rings decorated with As handles. They can be considered to be Zintl phases with Tt atoms in +4, +3, and +1 oxidation states. Band structure calculations predict that these compounds are semiconductors with narrow band gaps (0.71 eV in KGe3As3, 0.50 eV in KSn3As3).

The series of quaternary sulfides with general formula Ln2CuMS5 (Ln=La, Ce; M=Sb, Bi) have been synthesized by solid-state reactions. Three representative members have been structurally characterized by single-crystal X-ray diffraction. La2CuSbS5 crystallizes in a new structure type (space group Ima2 (no. 46), Z=4, a=13.401(2) A, b=7.592(1) A, c=7.598(1) A, V=773.1(3) A3). The bismuth analogs of composition La2CuBiS5 and Ce2CuBiS5 crystallize with the La2CuInSe5 structure type (space group Pnma (no. 62), Z=4). Lattice parameters for La2CuBiS5: a=11.9213(5) A, b=3.9967(2) A, c=17.0537(8) A, V=812.56(7) A3; lattice parameters for Ce2CuBiS5: a=11.9179(15) A, b=3.9596(5) A, c=16.955(2) A, V=800.13(17) A3). The similarities and the differences between the two structures are discussed. Electronic structure calculations for La2CuSbS5 and La2CuBiS5 are also presented; they suggest semiconducting behavior with energy gaps exceeding 1.7 eV.

The ternary rare-earth-metal chromium gallides RE 4 CrGa 12 ( RE =Tb–Tm) have been prepared by reactions of the elements at 1000 °C in the presence of excess gallium used as a self-flux. Their structures are derived by inserting Cr atoms into a quarter of the empty Ga 6 octahedral clusters found in the parent binary gallides RE Ga 3 (AuCu 3 -type), although single-crystal X-ray diffraction studies suggest that complex superstructures may be adopted. An ideal ordered Y 4 PdGa 12 -type structure was successfully refined for a crystal of Dy 4 CrGa 12 (Pearson symbol cI 34, space group Im 3 ¯ m , Z =2, a =8.572(1) A). Magnetic measurements on single-crystal samples reveal ferromagnetic or possibly ferrimagnetic ordering for the Tb, Dy, and Er members ( T C =22, 15, and 2.8 K, respectively) and antiferromagnetic ordering for the Ho member ( T N =7.5 K). Band structure calculations on a hypothetical “Y 4 CrGa 12 ” model suggest that the Cr atoms carry no local magnetic moment.

The ternary arsenide BaAg{sub 2}As{sub 2} has been prepared by reaction of the elements at 850 Degree-Sign C. Single-crystal and powder X-ray diffraction analysis revealed that it adopts the ThCr{sub 2}Si{sub 2}-type structure (Pearson symbol tI10, space group I4/mmm, Z=2, a=4.6025(3) A, c=10.8672(6) A at 295 K) featuring [Ag{sub 2}As{sub 2}] layers interconnected by homoatomic As-As bonds along the c-direction. Band structure calculations indicate no gap at the Fermi level, and support the occurrence of strong As-As and weak Ag-Ag bonding. The asymmetric lineshape and the absence of a BE shift in the Ag 3d{sub 5/2} core-line peak relative to the element suggest delocalization of the Ag valence electrons. A significant negative BE shift (1.0 eV) in the As 3d{sub 5/2} core-line peak relative to the element confirms the presence of anionic As atoms. A reversible transition is observed at 175 K in the electrical resistivity, and is probably related to a structural phase transition. - Graphical abstract: BaAg{sub 2}As{sub 2} adopts a ThCr{sub 2}Si{sub 2}-type structure with As-As pairs and undergoes a transition at 175 K in its electrical resistivity. Highlights: Black-Right-Pointing-Pointer BaAg{sub 2}As{sub 2} fills the gap within the BaM{sub 2}As{sub 2} series containing 4d metals. Black-Right-Pointing-Pointer [Ag{submore » 2}As{sub 2}] layers are linked by As-As pairs. Black-Right-Pointing-Pointer XPS studies support the assignment of monovalent Ag and anionic As atoms. Black-Right-Pointing-Pointer An anomaly is observed at 175 K in the electrical resistivity.« less

Four ternary pnictides AAg{sub 4}Pn{sub 2} (A=Sr, Eu; Pn=As, Sb) were prepared by reactions of the elements at 850 Degree-Sign C and their crystal structures were determined from single-crystal X-ray diffraction studies. These silver-containing pnictides AAg{sub 4}Pn{sub 2} adopt the trigonal CaCu{sub 4}P{sub 2}-type structure (Pearson symbol hR21, space group R3-bar m, Z=3; a=4.5555(6) A, c=24.041(3) A for SrAg{sub 4}As{sub 2}; a=4.5352(2) A, c=23.7221(11) A for EuAg{sub 4}As{sub 2}; a=4.7404(4) A, c=25.029(2) A for SrAg{sub 4}Sb{sub 2}; a=4.7239(3) A, c=24.689(2) A for EuAg{sub 4}Sb{sub 2}), which can be derived from the trigonal CaAl{sub 2}Si{sub 2}-type structure of the isoelectronic zinc-containing pnictides AZn{sub 2}Pn{sub 2} by insertion of additional Ag atoms into trigonal planar sites within [M{sub 2}Pn{sub 2}]{sup 2-} slabs built up of edge-sharing tetrahedra. Band structure calculations on SrAg{sub 4}As{sub 2} and SrAg{sub 4}Sb{sub 2} revealed that these charge-balanced Zintl phases actually exhibit no gap at the Fermi level and are predicted to be semimetals. - Graphical abstract: SrAg{sub 4}As{sub 2} and related pnictides adopt a CaCu{sub 4}P{sub 2}-type structure in which additional Ag atoms enter trigonal planar sites within slabs built from edge-sharing tetrahedra. Highlights: Black-Right-Pointing-Pointer AAg{sub 4}Pn{sub 2} are the first Ag-containing members of the CaCu{sub 4}P{submore » 2}-type structure. Black-Right-Pointing-Pointer Ag atoms are stuffed in trigonal planar sites within CaAl{sub 2}Si{sub 2}-type slabs. Black-Right-Pointing-Pointer Ag-Ag bonding develops through attractive d{sup 10}-d{sup 10} interactions.« less

The ternary arsenides A(2)Zn(2)As(3) and the quaternary derivatives A(2)Ag(2)ZnAs(3) (A = Sr, Eu) have been prepared by stoichiometric reaction of the elements at 800 °C. Compounds A(2)Zn(2)As(3) crystallize with the monoclinic Ba(2)Cd(2)Sb(3)-type structure (Pearson symbol mC28, space group C2/m, Z = 4; a = 16.212(5) Å, b = 4.275(1) Å, c = 11.955(3) Å, β = 126.271(3)° for Sr(2)Zn(2)As(3); a = 16.032(4) Å, b = 4.255(1) Å, c = 11.871(3) Å, β = 126.525(3)° for Eu(2)Zn(2)As(3)) in which CaAl(2)Si(2)-type fragments, built up of edge-sharing Zn-centered tetrahedra, are interconnected by homoatomic As-As bonds to form anionic slabs [Zn(2)As(3)](4-) separated by A(2+) cations. Compounds A(2)Ag(2)ZnAs(3) crystallize with the monoclinic Yb(2)Zn(3)Ge(3)-type structure (Pearson symbol mC32, space group C2/m; a = 16.759(2) Å, b = 4.4689(5) Å, c = 12.202(1) Å, β = 127.058(1)° for Sr(2)Ag(2)ZnAs(3); a = 16.427(1) Å, b = 4.4721(3) Å, c = 11.9613(7) Å, β = 126.205(1)° for Eu(2)Ag(2)ZnAs(3)), which can be regarded as a stuffed derivative of the Ba(2)Cd(2)Sb(3)-type structure with additional transition-metal atoms in tetrahedral coordination inserted to link the anionic slabs together. The Ag and Zn atoms undergo disorder but with preferential occupancy over four sites centered in either tetrahedral or trigonal planar geometry. The site distribution of these metal atoms depends on a complex interplay of size and electronic factors. All compounds are Zintl phases. Band structure calculations predict that Sr(2)Zn(2)As(3) is a narrow band gap semiconductor and Sr(2)Ag(2)ZnAs(3) is a semimetal. Electrical resistivity measurements revealed band gaps of 0.04 eV for Sr(2)Zn(2)As(3) and 0.02 eV for Eu(2)Zn(2)As(3), the latter undergoing an apparent metal-to-semiconductor transition at 25 K.

The ternary rare-earth zinc arsenides RE Zn 1− x As 2 ( RE =La–Nd, Sm) were prepared by reaction of the elements at 800 °C. Single-crystal and powder X-ray diffraction analysis revealed a defect SrZnBi 2 -type average structure for the La member (Pearson symbol tI 16, space group I 4/ mmm , Z =4; a =4.0770(9) A, c =20.533(5) A), in contrast to defect HfCuSi 2 -type average structures for the remaining RE members (Pearson symbol tP 8, space group P 4/ nmm , Z =2; a =4.0298(5)–3.9520(4) A, c =10.222(1)–10.099(1) A in the progression from Ce to Sm). The homogeneity range is not appreciable (estimated to be narrower than 0.6 x 1− x As 2 ) and the formula RE Zn 0.67 As 2 likely represents the Zn-rich phase boundary. The Ce–Nd members are Curie–Weiss paramagnets. LaZn 0.67 As 2 shows activated behavior in its electrical resistivity, whereas SmZn 0.67 As 2 exhibits anomalies in its temperature dependence of the electrical resistivity.

The quaternary germanide arsenides ZrCuGeAs and HfCuGeAs were prepared by reaction of “ZrCuGe” or “HfCuGe” precursor materials with As at 800 °C. They are new representatives of the ZrCuSiAs-type structure (tetragonal, space group P4/nmm, Z = 2, Pearson symbol tP8), as determined by single-crystal X-ray diffraction on ZrCuGeAs (a = 3.7155(2) A, c = 9.5644(6) A) and powder X-ray diffraction on HfCuGeAs (a = 3.6935(3) A, c = 9.5557(9) A). They belong in the small category of ZrCuSiAs-type compounds exhibiting strong covalent bonding in three dimensions, as reflected in their location in a structure map and as confirmed by band structure calculations. X-ray photoelectron spectroscopy provides evidence for anionic As atoms. Both compounds exhibit temperature-independent Pauli paramagnetism.

Ternary rare-earth cobalt gallides RE4Co3Ga16 (RE = Gd–Er, Y) have been prepared by arc-melting of the elements followed by annealing at 800 °C. Single crystals of the Gd and Tb members were also grown in the presence of a Ga self-flux. They extend the rare-earth substitution possible in the Sm4Co3Ga16-type structure (Pearson symbol tP23, space group P4/mmm, Z = 1), in which additional Co atoms enter as self-interstitials into the parent RE2CoGa8 structure. Structural refinements were carried out on single-crystal (RE = Gd, Tb) and powder (RE = Dy, Ho, Er, Y) X-ray diffraction data. Cell parameters lie in the ranges of a = 6.03–5.96 A and c = 11.11–10.96 A. Magnetic measurements on RE4Co3Ga16 (RE = Gd, Tb, Dy) reveal that they order antiferromagnetically below TN of 19, 25, and 14 K, respectively; Y4Co3Ga16 is Pauli paramagnetic. The electrical resistivity of Tb4Co3Ga16 undergoes a transition coincident with the magnetic ordering temperature. Band structure calculations on Y4Co3Ga16 indicate that the major bonding contributions arise from Co–Ga and Ga–Ga interactions, with the stuffing of interstitial Co atoms into octahedral sites of the parent Y2CoGa8 structure, which provides additional Co–Ga bonding stabilization.

The quaternary rare-earth phosphides RECuZnP2 (RE=Pr, Nd, Gd–Tm, Lu) have been prepared by reaction of the elements at 900 °C, completing this versatile series which forms for nearly all RE metals. They adopt the trigonal CaAl2Si2-type structure (Pearson symbol hP5, space group P3m1, Z=1), as confirmed by single-crystal X-ray diffraction analysis on ErCuZnP2 and powder X-ray diffraction analysis on the remaining members. The Cu and Zn atoms are assumed to be disordered over the single transition-metal site. Band structure calculations on a hypothetically ordered YCuZnP2 model suggest a semimetal, with a zero band gap between the valence and conduction bands. This electronic structure is supported by XPS valence band spectra for RECuZnP2 (RE=Gd–Er), in which the intensity drops off smoothly at the Fermi edge. The absence of a band gap permits the electron count to deviate from the precise value of 16 e− per formula unit, as demonstrated by the formation of a solid solution in GdCuxZn2−xP2 (1.0≤x≤1.3), while still retaining the CaAl2Si2-type structure. Because the Cu 2p XPS spectra indicate that the Cu atoms are always monovalent, the substitution of Cu for Zn leads to a decrease in electron count and a lowering of the Fermi level in the valence band. The magnetic susceptibility of RECuZnP2 (RE=Gd–Er), which obeys the Curie–Weiss law, confirms the presence of trivalent RE atoms.

The rare-earth iron arsenides RE(12)Fe(57.5)As(41) (RE = La, Ce) have been prepared by direct reactions of the elements in the presence of a Sn flux. Analysis of single-crystal X-ray diffraction data reveals that they adopt a new orthorhombic structure type (Pearson symbol oP236, space group Pmmn, Z = 2; a = 10.8881(9) A, b = 25.753(2) A, c = 12.5436(10) A for RE = La; a = 10.8376(8) A, b = 25.639(2) A, c = 12.4701(9) A for RE = Ce). In this metal-rich arsenide, the complex three-dimensional network (derived from 4 RE, 24 Fe, and 17 As sites) can be described as being built from unusual wavelike layers of connected As-centered trigonal prisms. Five of the Fe sites are partially occupied. The electronic structure of these compounds was probed through core-line X-ray photoelectron spectra. Magnetic susceptibility measurements indicated ferromagnetic ordering at T(C) = 125 and 95 K for the La and Ce compounds, respectively. Electrical resistivity measurements on single crystals of Ce(12)Fe(57.5)As(41) showed metallic behavior with a prominent transition that coincides closely with the ferromagnetic ordering temperature.

Arc-melting and annealing of the elements (evacuated silica tubes, 800 °C, 1 week) is used to prepare ≈50 new quaternary germanides of the series Ln4M2InGe4 (Ln: Ce—Lu except Eu and Yb; M: Fe, Co, Ni, Ru, Rh, Ir) and a different but closely related series Ln4RhInGe4.

Single crystals of the new title Zintl phases are prepared by solid state reactions from mixtures of the elements in the molar ratio of Na:Ca:M:Sb = 3:3:1:4 (M: Al, Ga, In) in sealed Nb containers (1173 K, 24 h).

The title compounds are prepared from the elements (800 °C, 10 d) and characterized by powder and single crystal XRD, electrical resistivity measurements, and TB-LMTO-ASA band structure calculations.

The formation of quaternary rare-earth (RE) germanides containing transition metals (M's) from groups 6 to 10 was investigated through arc-melting and annealing reactions at 800 °C; about 50 new compounds were obtained. These include several new series of quaternary germanides RE4M2InGe4 (M = Fe, Co, Ru, Rh, Ir), previously known only for M = Mn and Ni; additional members of RE4Ni2InGe4 extended to other RE substituents; and a different but closely related series RE4RhInGe4. Detailed crystal structures were determined by single-crystal X-ray diffraction studies for 20 compounds. Monoclinic structures in space group C2/m are adopted by RE4M2InGe4 (Ho4Ni2InGe4-type, a = 15.1-16.5 A, b = 4.1-4.4 A, c = 6.9-7.3 A, β = 106.2-108.6°) and RE4RhInGe4 (own type, a = 20.0-20.2 A, b = 4.2-4.3 A, c = 10.1-10.2 A, β = 105.0-105.3°). Both structures contain frameworks built from MGe4 tetrahedra, InGe4 square planes, and Ge2 dimers, delimiting tunnels occupied by RE atoms. These structures can also be derived by cutting slabs along different directions from the more symmetrical RE2InGe2 structure. Although the Ge2 dimers are relatively invariant, the InGe4 square planes can undergo distortion to form two sets of short versus long In-Ge distances. This distortion results from a competition between M-Ge bonding in the MGe4 tetrahedra and In-Ge bonding in the InGe4 square planes.