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Your search keyword '"Stamper, A.K."' showing total 19 results
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19 results on '"Stamper, A.K."'

1. Low-temperature chemical vapor deposition processes and dielectrics for microelectronic circuit manufacturing at IBM

Author

Cote, D.R., Nguyen, S.V., Cote, W.J., Pennington, S.L., Stamper, A.K., and Podlesnik, D.V.

Subjects
International Business Machines Corp. -- Product development -- 00304653, Chemical vapor deposition -- Methods, Microelectronic packaging -- Research
Abstract

Significant progress has been made over the past decade in low-temperature plasma-enhanced and thermal chemical vapor deposition (CVD). The progress has occurred in response to the high demands placed on the insulators of multilevel microelectronic circuits because of the continuing reduction in circuit dimensions. High-aspect-ratio gap filling is foremost among these demands, which also include lower processing temperatures and improved dielectric planarization. This paper reviews the history of interlevel and intermetal dielectrics used in microelectronic circuit manufacturing at IBM and the current status of processes used in IBM manufacturing and development lines, and describes the challenges for future memory and logic chip applications.

Published
1995

2. Effects of failure criteria on the lifetime distribution of dual-damascene Cu line/via on W.

Author

Liu, R.F., Hu, C.-K., Gignac, L., Harper, J.M.E., Lloyd, J., Liu, X.-H., and Stamper, A.K.

Subjects
TUNGSTEN, COPPER, DAMASCENING, ELECTRODIFFUSION, ELECTRIC insulators & insulation, SILICON nitride
Abstract

Electromigration lifetime was studied on 0.23 μm wide Cu dual-damascene lines connected to underlying W lines with a TaN/Ta liner and SiN[sub x]/SiO[sub 2] insulator. The failure criteria used to study electromigration lifetime were based on the increase in test line resistance. Over 900 samples were tested to observe early electromigration Cu lifetime. Experimental results show that the lifetime distribution of samples tested using a failure criterion of 1% (3 Ω) resistance increase at the test temperature is best described by a trimodal function. However, the lifetime distribution of samples tested using a failure criterion of 50% is best described by a bimodal function. This difference in lifetime distribution is due to three types of observed deviant line resistance behaviors (plateau, fluctuating, and uphill) of certain samples which are caused by different types of void growth and a variation in liner stability. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2004
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3. RF MEMS CAPACITOR INTEGRATION

Author

Stamper, A.K., primary, Cunningham, S.J., additional, DeReus, D.R., additional, Gillman, C., additional, Gordon, M.D., additional, He, Z.-X., additional, Jahnes, C.V., additional, Luce, S.L., additional, Maling, J., additional, Morris, A.S., additional, Murphy, W.J., additional, Vitomirov, I., additional, White, E.J., additional, Wong, B.K., additional, and Lai, N., additional

Published
2012
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5. Planar MEMS RF capacitor integration.

Author

Stamper, A.K., Jahnes, C.V., Dupuis, S.R., Gupta, A., He, Z.-X., Herrin, R.T., Luce, S.E., Maling, J., Miga, D.R., Murphy, W.J., White, E.J., Cunningham, S.J., DeReus, D.R., Vitomirov, I., and Morris, A.S.

Published
2011
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