1. Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements
- Author
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Javier Mateos, V. J. Raposo, E. Perez-Martin, Christophe Gaquiere, H. Sanchez-Martin, Tomas Gonzalez, D. Vaquero, Ignacio Iniguez-de-la-Torre, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Spanish MINECO [TEC2017-83910-R], FEDEREuropean Commission [TEC2017-83910-R, SA254P18], Junta de Castilla y LeonJunta de Castilla y Leon [SA254P18], and Ministry of Science and Innovation (Ministry of Universities)
- Subjects
Materials science ,02 engineering and technology ,Trapping ,MIcrowave detection ,7. Clean energy ,01 natural sciences ,GaN ,Trap (computing) ,[SPI]Engineering Sciences [physics] ,Responsivity ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Electrical and Electronic Engineering ,Safety, Risk, Reliability and Quality ,Electrical impedance ,Traps ,Surface states ,Diode ,010302 applied physics ,Self-switching diodes ,business.industry ,020208 electrical & electronic engineering ,Heterojunction ,Atmospheric temperature range ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Optoelectronics ,business - Abstract
The presence of trap states in self-switching diodes (SSD) based on an AlGaN/GaN heterojunction has been identified by means of their AC characterization between 75 kHz to 30 MHz in a wide temperature range, from 80 K to 300 K. Measurements allow us to determine two different characteristic energies of the traps, 12 meV and 61 meV, being associated to a distribution of surface states and one discrete bulk trap, respectively. The impact of the trapping effects on microwave detection at zero-bias has also been analyzed in the same temperature range, the measured responsivity showing an unusual enhancement and a low-frequency roll-off at low temperatures., Spanish MINECO and FEDER through project TEC2017-83910-R and Junta de Castilla y León and FEDER through project SA254P18
- Published
- 2020