9 results on '"Souliman El Moussaoui"'
Search Results
2. Element-selective magnetization states in a Gd23Fe67Co10 alloy, probed by soft X-ray resonant magneto-optical Kerr effect
- Author
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Toshihide Sumi, Tomoaki Senoo, Masafumi Horio, Souliman El Moussaoui, Eiken Nakamura, Kiyohisa Tanaka, Arata Tsukamoto, and Iwao Matsuda
- Subjects
General Engineering ,General Physics and Astronomy - Abstract
The core-level resonant magneto-optical Kerr effect of a ferrimagnetic metal alloy, Gd23Fe67Co10, was measured at the Fe M-shell and Gd N-shell absorption edges using rotating analyzer ellipsometry. A large Kerr rotation angle of several degrees was detected at room temperature. The signal was found to be strong enough for element-selective magneto-optical experiments to trace various magnetic events, such as all-optical magnetization switching.
- Published
- 2022
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3. Element-selectively tracking ultrafast demagnetization process in Co/Pt multilayer thin films by the resonant magneto-optical Kerr effect
- Author
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Shigeki Owada, Kohei Yamamoto, Makina Yabashi, Iwao Matsuda, Susumu Yamamoto, Hiroki Wadati, Takeshi Seki, Koki Takanashi, Yasuyuki Hirata, Souliman El Moussaoui, and Yuya Kubota
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010302 applied physics ,Condensed Matter - Materials Science ,Magnetization dynamics ,Kerr effect ,Materials science ,Physics and Astronomy (miscellaneous) ,Condensed matter physics ,Demagnetizing field ,Free-electron laser ,Materials Science (cond-mat.mtrl-sci) ,FOS: Physical sciences ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Magneto-optic Kerr effect ,Ferromagnetism ,0103 physical sciences ,Atom ,Thin film ,0210 nano-technology - Abstract
We examined the photo-induced dynamics of ferromagnetic Co/Pt thin films demonstrating perpendicular magnetic anisotropy with element specificity using resonant polar magneto-optical Kerr effect measurements at Pt~N${}_{6,7}$ and Co~M${}_{2,3}$ edges with an x-ray free electron laser. The obtained results showed a clear element dependence of photo-induced demagnetization time scales: $\tau_\textrm{demag.}^\textrm{Co}=80\pm60~\textrm{fs}$ and $\tau_\textrm{demag.}^\textrm{Pt}=640\pm140~\textrm{fs}$. This dependence is explained by the induced moment of the Pt atom by current flow from the Co layer through the interfaces. The observed magnetization dynamics of Co and Pt can be attributed to the characteristics of photo-induced Co/Pt thin film phenomena including all-optical switching.
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- 2020
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4. Finite size effect on the structural and magnetic properties of MnAs/GaAs(001) patterned microstructures thin films
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Antoine Barbier, Francesco Maccherozzi, Daniel Bonamy, Souliman El Moussaoui, François Montaigne, Rachid Belkhou, Cristian Mocuta, Ernst Bauer, Stefan Stanescu, Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Systèmes Physiques Hors-équilibre, hYdrodynamique, éNergie et compleXes (SPHYNX), Service de physique de l'état condensé (SPEC - UMR3680), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, College of Science and Technology, Nihon University, Laboratoire Nano-Magnétisme et Oxydes (LNO), Institut Jean Lamour (IJL), Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), DIAMOND Light source, Department of Physics, Arizona State University (ASU), Arizona State University [Tempe] (ASU), and Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS)
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[PHYS]Physics [physics] ,010302 applied physics ,Phase transition ,Multidisciplinary ,Materials science ,Condensed matter physics ,Magnetic domain ,Transition temperature ,lcsh:R ,Relaxation (NMR) ,Elastic energy ,lcsh:Medicine ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Epitaxy ,01 natural sciences ,Article ,Condensed Matter::Materials Science ,Low-energy electron microscopy ,Phase (matter) ,0103 physical sciences ,lcsh:Q ,lcsh:Science ,0210 nano-technology - Abstract
MnAs epitaxial thin films on GaAs(001) single crystalline substrates crystallize at room temperature (RT) in a mixture of two crystalline phases with distinct magnetic properties, organized as stripes along the MnAs [0001] direction. This particular morphology is driven by anisotropic epitaxial strain. We elucidate here the physical mechanisms at the origin of size reduction effect on the MnAs crystalline phase transition. We investigated the structural and magnetic changes in MnAs patterned microstructures (confined geometry) when the lateral dimension is reduced to values close to the periodicity and width of the stripes observed in continuous films. The effects of the microstructure’s lateral size, shape and orientation (with respect to the MnAs $$\mathrm{[11}\bar{2}\mathrm{0]}$$ [11 2 ¯ 0] direction) were characterized by local probe synchrotron X-ray diffraction (μ-XRD) using a focused X-ray beam, X-ray Magnetic Circular Dichroïsm - Photo Emission Electron Microscopy (XMCD-PEEM) and Low Energy Electron Microscopy (LEEM). Changes in the transition temperature and the crystalline phase distribution inside the microstructures are evidenced and quantitatively measured. The effect of finite size and strain relaxation on the magnetic domain structure is also discussed. Counter-intuitively, we demonstrate here that below a critical microstructure size, bulk MnAs structural and magnetic properties are restored. To support our observations we developed, tested and validated a model based on the size-dependence of the elastic energy and strain relaxation to explain this phase re-distribution in laterally confined geometry.
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- 2017
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5. The Non-Local Energy Dissipation in All-Optical Magnetization Switching of GdFeCo Thin Films
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Ryohei Ueda, Shinnosuke Terashita, Souliman El Moussaoui, Hiroki Yoshikawav, and Arata Tsukamoto
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Magnetization ,Materials science ,Condensed matter physics ,Magnetic domain ,Excited state ,Nucleation ,Atomic ratio ,Thin film ,Dissipation ,Penetration depth - Abstract
Clarifying the relation between All-Optical magnetization switching (AOS) [1] and the non-local energy dissipation process, we focus on the contribution from energy dissipation process on depth direction. For this purpose, we research the differently designed structure dependency of created magnetic domain. Its dependency is observed from the reversal phenomena, AOS or the multi-domains by Thermo-Magnetic Nucleation (TMN) in GdFeCo multi-layer thin films. We obserbed these phenomena that is excited by a femtosecond laser pulse on the multilayer: following the stack design hereafter: SiN (60 nm) / $\text{Gd}_{x}(\text{Fe}_{87.5}\text{Co}_{12.5})_{100-x}(l)$ / SiN (m) / AITi (n) / glass sub., (where x is the Gd atomic percent and the {l, m, n} indexes are the thickness in nm of the respective layer (l = 10 ~30 nm, $m$ = 5 or 0 nm, $n$ = 10 or 0 nm) with a polarizing microscope. And $l$ is designed around penetration depth.
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- 2016
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6. Studying nanomagnets and magnetic heterostructures with X-ray PEEM at the Swiss Light Source
- Author
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Ana Balan, Frithjof Nolting, Arantxa Fraile Rodríguez, Souliman El Moussaoui, Armin Kleibert, L. Le Guyader, Michele Buzzi, and Jörg Raabe
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Magnetization dynamics ,Radiation ,Materials science ,Magnetic domain ,business.industry ,Analytical chemistry ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Magnetization ,Photoemission electron microscopy ,X-ray magnetic circular dichroism ,Femtosecond ,Magnetic nanoparticles ,Optoelectronics ,Physical and Theoretical Chemistry ,business ,Spectroscopy ,Swiss Light Source - Abstract
Polarization dependent X-ray absorption spectroscopy and microscopy enables the element selective investigation of magnetic systems at the nanoscale. At the Swiss Light Source a photoemission electron microscope is used for the study of a broad variety of systems. Here, a review of recent activities is presented with a focus on instrumental and analytical developments. A new procedure for the 3 dimensional determination of the magnetization vector has been developed, and is demonstrated for GdFeCo microstructures displaying in-plane and out-of-plane domains, and sub-20 nm Fe nanoparticles. The recent progress for measurements in applied magnetic fields is presented and a new set-up for time-resolved measurements employing femtosecond laser pulses is described.
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- 2012
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7. Magnetic layer thickness dependence of all-optical magnetization switching in GdFeCo thin films
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Arata Tsukamoto, Ryohei Ueda, Hiroki Yoshikawa, Souliman El Moussaoui, and Shinnosuke Terashita
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Materials science ,Condensed matter physics ,Magnetic domain ,business.industry ,General Engineering ,Nucleation ,General Physics and Astronomy ,02 engineering and technology ,Thermomagnetic convection ,Dissipation ,021001 nanoscience & nanotechnology ,Laser ,01 natural sciences ,Fluence ,law.invention ,Magnetization ,Optics ,law ,0103 physical sciences ,Thin film ,010306 general physics ,0210 nano-technology ,business - Abstract
To clarify the relationship between all-optical magnetization switching (AOS) and nonlocal and nonadiabatic energy dissipation process, we focus on the contribution from energy dissipation in the depth direction. Differently designed structure dependence of created magnetic domain is observed from the reversal phenomenon, AOS, or multidomains by thermomagnetic nucleation (TMN) in GdFeCo multilayer thin films. TMN depends on the shared absorbed energy throughout the continuous metallic volume. On the other hand, AOS critically depends on nonadiabatic energy dissipation process with the electron system in sub-picoseconds. Furthermore, the laser fluence dependence of AOS-created domain sizes indicates that the value of irradiated laser fluence threshold per magnetic domain volume is almost constant. However, a lower laser irradiation fluence below 1–2 mW has a larger value and thickness dependence. From these results, we suggest that AOS depends on energy dissipation from the incident surface in the depth direction for a few picoseconds.
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- 2016
- Full Text
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8. Large-Area and High-Quality Epitaxial Graphene on Off-Axis SiC Wafers
- Author
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M. Eddrief, Rachid Belkhou, Mathieu G. Silly, Fausto Sirotti, Claire Mathieu, Abdelkarim Ouerghi, Matthieu Picher, Souliman El Moussaoui, Massimiliano Marangolo, Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), ANR, and RTRA Triangle de la Physique
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spectroscopy ,Materials science ,General Physics and Astronomy ,Nanotechnology ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,law.invention ,law ,General Materials Science ,Wafer ,Electronics ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,Graphene oxide paper ,vicinal SiC ,Graphene ,General Engineering ,low-energy electron microscopy ,021001 nanoscience & nanotechnology ,epitaxial graphene ,0104 chemical sciences ,Low-energy electron microscopy ,electronic properties ,scanning tunneling microscopy ,Sublimation (phase transition) ,Scanning tunneling microscope ,0210 nano-technology ,Graphene nanoribbons - Abstract
International audience; The growth of large and uniform graphene layers remains very challenging to this day due to the close correlation between the electronic and transport properties and the layer morphology. Here, we report the synthesis of uniform large-scale mono- and bilayers of graphene on off-axis 6H-SiC(0001) substrates. The originality of our approach consists of the fine control of the growth mode of the graphene by precise control of the Si sublimation rate. Moreover, we take advantage of the presence of nanofacets on the off-axis substrate to grow a large and uniform graphene with good long-range order. We believe that our approach represents a significant step toward the scalable synthesis of graphene films with high structural qualities and fine thickness control, in order to develop graphene-based electronic devices.
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- 2012
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9. Magnetic layer thickness dependence of all-optical magnetization switching in GdFeCo thin films.
- Author
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Hiroki Yoshikawa, Souliman El Moussaoui, Shinnosuke Terashita, Ryohei Ueda, and Arata Tsukamoto
- Abstract
To clarify the relationship between all-optical magnetization switching (AOS) and nonlocal and nonadiabatic energy dissipation process, we focus on the contribution from energy dissipation in the depth direction. Differently designed structure dependence of created magnetic domain is observed from the reversal phenomenon, AOS, or multidomains by thermomagnetic nucleation (TMN) in GdFeCo multilayer thin films. TMN depends on the shared absorbed energy throughout the continuous metallic volume. On the other hand, AOS critically depends on nonadiabatic energy dissipation process with the electron system in sub-picoseconds. Furthermore, the laser fluence dependence of AOS-created domain sizes indicates that the value of irradiated laser fluence threshold per magnetic domain volume is almost constant. However, a lower laser irradiation fluence below 1–2 mW has a larger value and thickness dependence. From these results, we suggest that AOS depends on energy dissipation from the incident surface in the depth direction for a few picoseconds. [ABSTRACT FROM AUTHOR]
- Published
- 2016
- Full Text
- View/download PDF
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