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28 results on '"Snyder, D.W."'

5. Tensile stress generation and dislocation reduction in Si-doped [Al.sub.x][Ga.sub.1-x]N films

Author

Manning, I.C., Weng, X., Acord, J.D., Fanton, M.A., Snyder, D.W., and Redwing, J.M.

Subjects
Aluminum alloys -- Electric properties, Aluminum alloys -- Mechanical properties, Chemical vapor deposition -- Usage, Gallium -- Electric properties, Gallium -- Mechanical properties, Semiconductor doping -- Analysis, Silicon carbide -- Electric properties, Silicon carbide -- Mechanical properties, Stress analysis (Engineering) -- Usage, Physics
Abstract

The effects of Si doping on the evolution of stress in [Al.sub.x][Ga.sub.1-x]N:Si thin films grown on 6H-SiC by metal organic chemical vapor deposition are examined by using in situ water curvature measurements. The model describing tensile stress generated by dislocation effective climb is modified for accounting for the dislocation reduction and has produced an improved fit to the experimental stress-thickness data.

Published
2009

6. Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

Author

H.J. Chung, Polyakov, A.Y., Huh, S.W., Nigam, S., Skowronski, M., Fanton, M.A., Weiland, B.E., and Snyder, D.W.

Subjects
Silicon carbide -- Chemical properties, Halides -- Chemical properties, Chemical vapor deposition -- Analysis, Physics
Abstract

High-purity 6H-SiC single crystals were grown by the halide chemical-vapor deposition process. Growth was performed in a vertical hot-wall reactor with a separate injection of a silicon precursor and a carbon precursor.

Published
2005

13. Structure-based design of the first potent and selective inhibitor of human non-pancreatic secretory phospholipase A2

Author

Schevitz, R.W., primary, Bach, N.J., additional, Carlson, D.G., additional, Chirgadze, N.Y., additional, Clawson, D.K., additional, Dillard, R.D., additional, Draheim, S.E., additional, Hartley, L.W., additional, Jones, N.D., additional, Mihelich, E.D., additional, Olkowski, J.L., additional, Snyder, D.W., additional, Sommers, C., additional, and Wery, J.-P., additional

Published
1995
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20. The Decision to Join a Union

Author

Snyder, D.W.

Subjects
Labor unions -- Membership, Labor unions -- Study and teaching, Business, Business, regional
Published
1983

21. Structure-based design of the first potent and selective inhibitor of human non-pancreatic secretory phospholipase A2

Author

Schevitz, R.W., Bach, N.J., Carlson, D.G., Chirgadze, N.Y., Clawson, D.K., Dillard, R.D., Draheim, S.E., Hartley, L.W., Jones, N.D., Mihelich, E.D., Olkowski, J.L., Snyder, D.W., Sommers, C., and Wery, J.-P.

Abstract

A lead compound obtained from a high volume human non-pancreatic secretory phospholipase A2(hnps-PLA2) screen has been developed into a potent inhibitor using detailed structural knowledge of inhibitor binding to the enzyme active site. Four crystal structures of hnps-PLA2complexed with a series of increasingly potent indole inhibitors were determined and used as the structural basis for both understanding this binding and providing valuable insights for further development. The application of structure-based drug design has made possible improvements in the binding of this screening lead to the enzyme by nearly three orders of magnitude. Furthermore, the optimized structure (LY311727) displayed 1,500-fold selectivity when assayed against porcine pancreatic s-PLA2.

Published
1995
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22. Effect of substrate misorientation on surface morphology of homoepitaxial CdTe films grown by...

Author

Snyder, D.W., Mahajan, S., Ko, E.I., and Sides, P.J.

Subjects
*EPITAXY, *METAL organic chemical vapor deposition
Abstract

Investigates the effect of substrate misorientation on surface morphology of CdTe homoepitaxial films deposited by organometallic vapor phase epitaxy (OMVPE). Effect of misorientation of CdTe(100) substrates on formation of hillocks in CdTe films deposited by OMVPE; Double-crystal x-ray rocking curves.

Published
1991
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28. Effects of composition on dislocation microstructure and stress in Si-doped Al x Ga1−x N

Author

Manning, I.C., Weng, X., Fanton, M.A., Snyder, D.W., and Redwing, J.M.

Subjects
*GALLIUM nitride, *DISLOCATIONS in crystals, *SILICON, *MICROSTRUCTURE, *SEMICONDUCTOR doping, *STRAINS & stresses (Mechanics), *ALUMINUM, *METAL organic chemical vapor deposition
Abstract

Abstract: The stress evolution of Si-doped Al x Ga1−x N epilayers with x ranging from 0 to 0.62 was examined using an in situ wafer curvature measurement technique. Transmission electron microscopy was used to assess the effects of Si concentration and composition on defect microstructure. It was found that the density of edge-type threading dislocations (TDs) increased with increasing x, corresponding to the evolution of higher magnitudes of tensile stress, attributed to TD inclination. The results are discussed in the context of proposed inclination mechanisms that feature jog formation as the process leading to TD inclination. [Copyright &y& Elsevier]

Published
2010
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