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Magnetoelectric oxide heterostructures are proposed active layers for spintronic memory and logic devices, where information is conveyed through spin transport in the solid state. Incomplete theories of the coupling between local strain, charge, and magnetic order have limited their deployment into new information and communication technologies. In this study, we report direct, local measurements of strain- and charge-mediated magnetization changes in the La0.7Sr0.3MnO3/PbZr0.2Ti0.8O3 system using spatially resolved characterization techniques in both real and reciprocal space. Polarized neutron reflectometry reveals a graded magnetization that results from both local structural distortions and interfacial screening of bound surface charge from the adjacent ferroelectric. Density functional theory calculations support the experimental observation that strain locally suppresses the magnetization through a change in the Mn-eg orbital polarization. We suggest that this local coupling and magnetization suppression may be tuned by controlling the manganite and ferroelectric layer thicknesses, with direct implications for device applications.

A series of LaAlO3 thin films with different thicknesses were deposited by pulsed laser deposition at temperatures from 720 °C to 800 °C. The results from grazing incidence x-ray diffraction and reciprocal space mapping indicate that a thin layer of LaAlO3 adjacent to the SrTiO3 substrate remains almost coherently strained to the substrate, while the top layer starts to relax quickly above a certain critical thickness, followed by a gradual relaxation at larger film thickness when they are grown at lower temperatures. The atomic force microscopy results show that the fast relaxation is accompanied by the formation of cracks on the film surface. This can be ascribed to the larger energy release rate when compared with the resistance of LaAlO3 to cracking, according to calculations from the Griffith fracture theory. For films grown at 720 °C, a drop in sheet resistance by two orders of magnitude is observed when the top layer starts to relax, indicating a relationship between the strain and the conductivity of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface. The strain engineered by growth temperature provides a useful tool for the manipulation of the electronic properties of oxide heterointerfaces. [ABSTRACT FROM AUTHOR]

The article discusses about the self-assembly of nanostructures from conjugates of elastin-like peptides and collagen-like peptides (ELP-CLP) has studied as means to produce thermoresponsive, collagen-binding drug delivery vehicles. Topics include the lower transition temperature of conjugates with ELP or CLP domains enables the formation of nanoparticles physiological temperature; and the chemical structure, molecular geometry, and solvent conditions has tuned to affect the size, and shape.

For potential applications in superconducting RF cavities, we have investigated the properties of polycrystalline MgB2 films, including the thickness dependence of the lower critical field Hc1. MgB2 thin films were fabricated by hybrid physical-chemical vapor deposition on (0001) SiC substrate either directly (for epitaxial films) or with a MgO buffer layer (for polycrystalline films). When the film thickness decreased from 300 nm to 100 nm, Hc1 at 5 K increased from around 600 Oe to 1880 Oe in epitaxial films and to 1520 Oe in polycrystalline films. The result is promising for using MgB2/MgO multilayers to enhance the vortex penetration field. [ABSTRACT FROM AUTHOR]

Photocorrosion stable WO(3) nanowire arrays are synthesized by a solvothermal technique on fluorine-doped tin oxide coated glass. WO(3) morphologies of hexagonal and monoclinic structure, ranging from nanowire to nanoflake arrays, are tailored by adjusting solution composition with growth along the (001) direction. Photoelectrochemical measurements of illustrative films show incident photon-to-current conversion efficiencies higher than 60% at 400 nm with a photocurrent of 1.43 mA/cm(2) under AM 1.5G illumination. Our solvothermal film growth technique offers an exciting opportunity for growth of one-dimensional metal oxide nanostructures with practical application in photoelectrochemical energy conversion.