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203 results on '"Slesazeck, S."'

5. Next generation ferroelectric materials for semiconductor process integration and their applications.

Author

Mikolajick, T., Slesazeck, S., Mulaosmanovic, H., Park, M. H., Fichtner, S., Lomenzo, P. D., Hoffmann, M., and Schroeder, U.

Subjects
*FERROELECTRIC materials, *MANUFACTURING processes, *SEMICONDUCTOR materials, *ALUMINUM nitride, *FERROELECTRICITY
Abstract

Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications. [ABSTRACT FROM AUTHOR]

Published
2021
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11. High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO2: Si-Based 1T-1C FeRAM Arrays

Author

Francois, T., primary, Coignus, J., additional, Makosiej, A., additional, Giraud, B., additional, Carabasse, C., additional, Barbot, J., additional, Martin, S., additional, Castellani, N., additional, Magis, T., additional, Grampeix, H., additional, Van Duijn, S., additional, Mounet, C., additional, Chiquet, P., additional, Schroeder, U., additional, Slesazeck, S., additional, Mikolajick, T., additional, Nowak, E., additional, Bocquet, M., additional, Barrett, N., additional, Andrieu, F., additional, and Grenouillet, L., additional

Published
2022
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13. 16kbit HfO 2 :Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility

Author

Francois, T, Coignus, J, Makosiej, A, Giraud, B, Carabasse, C, Barbot, J, Martin, S, Castellani, N, Magis, T, Grampeix, H, van Duijn, S, Mounet, C, Chiquet, P, Schroeder, U, Slesazeck, S, Mikolajick, T, Nowak, E, Bocquet, Marc, Barrett, N, Andrieu, F, Grenouillet, L, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), NaMLab gGmbH, CEA- Saclay (CEA), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; 16kbit 1T-1C FeRAM arrays are demonstrated at 130nm node with TiN/HfO2:Si/TiN ferroelectric capacitors integrated in the Back-End-of-Line (BEOL). Zero bit failure is reported at the array level, with memory window fully open down to 2.5V programming voltage, capacitor area down to 0.16µm² and switching speed down to 4ns. Promising endurance is reported at the array level up to 10 7 cycles. For the first time, solder reflow compatibility is demonstrated for HfO2-based FeRAM. These results pave the way to competitive ultra-low power embedded non-volatile memories at more advanced nodes.

Published
2021

19. Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence

Author

Maneux, C., primary, Mukherjee, C., additional, Deng, M., additional, Dubourg, M., additional, Reveil, L., additional, Bordea, G., additional, Lecestre, A., additional, Larrieu, G., additional, Trommer, J., additional, Breyer, E.T., additional, Slesazeck, S., additional, Mikolajick, T., additional, Baumgartner, O., additional, Karner, M., additional, Pirker, D., additional, Stanojevic, Z., additional, Atienza, David, additional, Levisse, A., additional, Ansaloni, G., additional, Poittevin, A., additional, Bosio, A., additional, Deleruyelle, D., additional, Marchand, C., additional, and O'Connor, I., additional

Published
2021
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20. 16kbit HfO2:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility

Author

Francois, T., primary, Coignus, J., additional, Makosiej, A., additional, Giraud, B., additional, Carabasse, C., additional, Barbot, J., additional, Martin, S., additional, Castellani, N., additional, Magis, T., additional, Grampeix, H., additional, Van Duijn, S., additional, Mounet, C., additional, Chiquet, P., additional, Schroeder, U., additional, Slesazeck, S., additional, Mikolajick, T., additional, Nowak, E., additional, Bocquet, M., additional, Barrett, N., additional, Andrieu, F., additional, and Grenouillet, L., additional

Published
2021
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22. On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2.

Author

Fengler, F. P. G., Hoffmann, M., Slesazeck, S., Mikolajick, T., and Schroeder, U.

Subjects
FERROELECTRICITY, HAFNIUM compounds, ZIRCONIUM compounds, OXIDES, FERROELECTRIC capacitors, HAFNIUM oxide, CRYSTALLOGRAPHY
Abstract

Manifold research has been done to understand the detailed mechanisms behind the performance instabilities of ferroelectric capacitors based on hafnia. The wake-up together with the imprint might be the most controversially discussed phenomena so far. Among crystallographic phase change contributions and oxygen vacancy diffusion, electron trapping as the origin has been discussed recently. In this publication, we provide evidence that the imprint is indeed caused by electron trapping into deep states at oxygen vacancies. This impedes the ferroelectric switching and causes a shift of the hysteresis. Moreover, we show that the wake-up mechanism can be caused by a local imprint of the domains in the pristine state by the very same root cause. The various domain orientations together with an electron trapping can cause a constriction of the hysteresis and an internal bias field in the pristine state. Additionally, we show that this local imprint can even cause almost anti-ferroelectric like behavior in ferroelectric films. [ABSTRACT FROM AUTHOR]

Published
2018
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23. Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs

Author

Mulaosmanovic, H., Müller, F., Lederer, M., Ali, T., Hoffmann, R., Seidel, K., Zhou, H., Ocker, J., Mueller, S., Dunkel, S., Kleimaier, D., Muller, J., Trentzsch, M., Beyer, S., Breyer, E.T., Mikolajick, T., Slesazeck, S., and Publica

Abstract

Long data retention is a critical requirement for many of the potential applications of HfO 2 -based ferroelectric field-effect transistors (FeFETs). However, methods for its rapid assessment are still missing. In this article, we report a detailed investigation of the retention and switching properties of FeFETs fabricated in the 28-nm high-k metal gate technology. We identify a clear correlation between the two properties and propose a method for fast prediction of the device retention behavior, which can be easily adopted to judge different fabrication processes. Finally, we extend the validity of the method to a direct assessment of disturb-free operating conditions, which may be particularly valuable for FeFET array operation.

Published
2020

24. Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories

Author

Mikolajick, T., Mulaosmanovic, H., Hoffmann, M., Max, B., Mittmann, T., Schroeder, U., Slesazeck, S., Mikolajick, T., Mulaosmanovic, H., Hoffmann, M., Max, B., Mittmann, T., Schroeder, U., and Slesazeck, S.

Abstract

Ferroelectricity is very attractive for nonvolatile memories since it allows non-volatility paired with a field driven switching mechanism enabling a very low-power write operation. Non-volatile memories based on ferroelectric lead-zirconium-titanate (PZT) (see fig. la) are available on the market for more than a quarter of a century now [1]. Yet they are limited to niche applications due to the compatibility issues of the ferroelectric material with CMOS processes and the associated limited scalability [2]. The discovery of ferroelectricity in doped hafnium oxide has revived the activities towards a variety of scalable ferroelectric nonvolatile memory devices

Published
2020

25. Dynamic modeling of hysteresis-free negative capacitance in ferroelectric/dielectric stacks under fast pulsed voltage operation

Author

Hoffmann, M., Slesazeck, S., Mikolajick, T., Hoffmann, M., Slesazeck, S., and Mikolajick, T.

Abstract

To overcome the fundamental limit of the transistor subthreshold swing of 60 mV/dec at room temperature, the use of negative capacitance (NC) in ferroelectric materials was proposed [1]. Due to the recent discovery of ferroelectricity in CMOS compatible HfO₂ and ZrO₂ based thin films [2], [3], the promise of ultra-low power steep-slope devices seems within reach. However, concerns have been raised about switching-speed limitations and unavoidable hysteresis in NC devices [4], [5]. Nevertheless, it was shown that NC effects without hysteresis can be observed in fast pulsed voltage measurements on ferroelectric/dielectric capacitors [6], which was recently confirmed using ferroelectric Hf₀.₅ Zr₀.₅ O₂[7], [8]. While in these works only the integrated charge after each pulse was studied, here we investigate for the first time if the transient voltage and charge characteristics are also hysteresis-free.

Published
2020

26. Next Generation Ferroelectric Memories enabled by Hafnium Oxide

Author

Mikolajick, T., Schroeder, U., Lomenzo, P. D., Breyer, E. T., Mulaosmanovic, H., Hoffmann, M., Mittmann, T., Mehmood, F., Max, B., Slesazeck, S., Mikolajick, T., Schroeder, U., Lomenzo, P. D., Breyer, E. T., Mulaosmanovic, H., Hoffmann, M., Mittmann, T., Mehmood, F., Max, B., and Slesazeck, S.

Abstract

Ferroelectrics are theoretically an ideal solution for low write power nonvolatile memories. However, the complexity of ferroelectric perovskites has hindered the scaling of such devices to competitive feature sizes. The discovery of ferroelectricity in hafnium oxide solved this issue. Ferroelectric memories in three variants, capacitor based ferroelectric RAM, ferroelectric field effect transistors and ferroelectric tunneling junctions have become competitors for future memory solutions again. In this paper, the basics and current status of hafnium oxide based ferroelectric memory devices is described and recent results are shown.

Published
2020

27. Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors

Author

Francois, T., primary, Grenouillet, L., additional, Coignus, J., additional, Vaxelaire, N., additional, Carabasse, C., additional, Aussenac, F., additional, Chevalliez, S., additional, Slesazeck, S., additional, Richter, C., additional, Chiquet, P., additional, Bocquet, M., additional, Schroeder, U., additional, Mikolajick, T., additional, Gaillard, F., additional, and Nowak, E., additional

Published
2021
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31. Nanosecond Laser Anneal (NLA) for Si-Implanted HfO2 Ferroelectric Memories Integrated in Back-End of Line (BEOL)

Author

Grenouillet, L., primary, Francois, T., additional, Coignus, J., additional, Kerdiles, S., additional, Vaxelaire, N., additional, Carabasse, C., additional, Mehmood, F., additional, Chevalliez, S., additional, Pellissier, C., additional, Triozon, F., additional, Mazen, F., additional, Rodriguez, G., additional, Magis, T., additional, Havel, V., additional, Slesazeck, S., additional, Gaillard, F., additional, Schroeder, U., additional, Mikolajick, T., additional, and Nowak, E., additional

Published
2020
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33. Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications

Author

Francois, T., primary, Pellissier, C., additional, Slesazeck, S., additional, Havel, V., additional, Richter, C., additional, Makosiej, A., additional, Giraud, B., additional, Breyer, E. T., additional, Materano, M., additional, Chiquet, P., additional, Bocquet, M., additional, Grenouillet, L., additional, Nowak, E., additional, Schroeder, U., additional, Gaillard, F., additional, Coignus, J., additional, Blaise, P., additional, Carabasse, C., additional, Vaxelaire, N., additional, Magis, T., additional, Aussenac, F., additional, and Loup, V., additional

Published
2019
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35. A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films.

Author

Lancaster, S., Mikolajick, T., and Slesazeck, S.

Subjects
FERROELECTRIC thin films, FERROELECTRIC devices, THIN films
Abstract

A wakeup scheme for ferroelectric thin Hf0.5Zr0.5O2 films is presented, based on a gradual switching approach using multiple short pulses with a voltage amplitude roughly equal to the coercive voltage. This enables the on-chip wakeup and switching operation of ferroelectric devices, such as ferroelectric tunnel junctions (FTJs), with identical pulses. After wakeup using alternating pulse trains, which gradually switch the film polarization, FTJ operation is demonstrated to be as effective as after "normal" wakeup, with bipolar pulses of an amplitude larger than the coercive voltage. In this case, the voltage applied during wakeup was reduced by 26%, thereby lowering the required operating power. [ABSTRACT FROM AUTHOR]

Published
2022
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37. Demonstration of High-speed Hysteresis-free Negative Capacitance in Ferroelectric Hf₀.₅Zr₀.₅O₂

Author

Hoffmann, M., Max, B., Mittmann, T., Schroeder, U., Slesazeck, S., and Mikolajick, T.

Subjects
Aluminum oxide, Hysteresis, Capacitance, Voltage measurement, Capacitors, Pulse measurements, Current measurement, ddc:621, Aluminiumoxid, Hysterese, Kapazität, Spannungsmessung, Kondensatoren, Impuls-Messungen, Strommessung
Abstract

We report the experimental observation of hysteresis-free negative capacitance (NC) in thin ferroelectric Hf₀.₅Zr₀.₅O₂ (HZO) films through high-speed pulsed charge-voltage measurements. Hysteretic switching is suppressed by the addition of thin Al₂O₃ layers on top of the HZO to prevent the screening of the polarization. We observe an S-shaped polarization-electric field dependence without hysteresis in agreement with Landau theory, which enables direct extraction of NC modeling parameters for ferroelectric HZO. Hysteresis-free NC is demonstrated down to 100 ns pulse widths limited only by our measurement setup. These results give critical insights into the physics of ferroelectric NC and practical NC device design using ferroelectric HZO.

Published
2018

38. Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology

Author

Breyer, E. T., Mulaosmanovic, H., Slesazeck, S., and Mikolajick, T.

Subjects
ddc:621.3, Logikgatter, Schwellenspannung, nichtflüchtiger Speicher, Feldeffekttransistoren, Logikanordnungen, Spannungsmessung, Logic gates, Threshold voltage, Nonvolatile memory, Field effect transistors, Logic arrays, Voltage measurement, Hardware_LOGICDESIGN
Abstract

Logic-in-memory circuits promise to overcome the von-Neumann bottleneck, which constitutes one of the limiting factors to data throughput and power consumption of electronic devices. In the following we present four-input logic gates based on only two ferroelectric FETs (FeFETs) with hafnium oxide as the ferroelectric material. By utilizing two complementary inputs, a XOR and a XNOR gate are created. The use of only two FeFETs results in a compact and nonvolatile design. This realization, moreover, directly couples the memory and logic function of the FeFET. The feasibility of the proposed structures is revealed by electrical measurements of HKMG FeFET memory arrays manufactured in 28nm technology.

Published
2018

39. On the relationship between field cycling and imprint in ferroelectric Hf₀.₅Zr₀.₅O₂

Author

Fengler, F. P. G., Hoffman, M., Slesazeck, S., Mikolajick, T., and Schroeder, U.

Subjects
Dielectric properties, Crystallographic defects, Ferroelectric capacitors, Transition metal oxides, Ferroelectric materials, ddc:530, Dielektrische Eigenschaften, kristallographische Defekte, Ferroelektrische Kondensatoren, Übergangsmetalloxide, Ferroelektrische Werkstoffe
Abstract

Manifold research has been done to understand the detailed mechanisms behind the performance instabilities of ferroelectric capacitors based on hafnia. The wake-up together with the imprint might be the most controversially discussed phenomena so far. Among crystallographic phase change contributions and oxygen vacancy diffusion, electron trapping as the origin has been discussed recently. In this publication, we provide evidence that the imprint is indeed caused by electron trapping into deep states at oxygen vacancies. This impedes the ferroelectric switching and causes a shift of the hysteresis. Moreover, we show that the wake-up mechanism can be caused by a local imprint of the domains in the pristine state by the very same root cause. The various domain orientations together with an electron trapping can cause a constriction of the hysteresis and an internal bias field in the pristine state. Additionally, we show that this local imprint can even cause almost anti-ferroelectric like behavior in ferroelectric films.

Published
2018

41. IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF

Author

Kolodinski, S., primary, Mart, C., additional, Weinreich, W., additional, Sessi, V., additional, Trommer, J., additional, Chohan, T., additional, Mulaosmanovic, H., additional, Weber, W. M., additional, Slesazeck, S., additional, Peng, B., additional, Esposito, C., additional, Zimmermann, Y., additional, Schroter, M., additional, Xu, X., additional, Testa, P. V., additional, Carta, C., additional, Ellinger, F., additional, Lehmann, S., additional, Drescher, M., additional, and Wiatr, M., additional

Published
2019
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45. Domain Formation in Ferroelectric Negative Capacitance Devices

Author

Hoffmann, M., Slesazeck, S., Mikolajick, T., Hoffmann, M., Slesazeck, S., and Mikolajick, T.

Abstract

The use of ferroelectric negative capacitance (NC) has been proposed as a promising way to reduce the power dissipation in nanoscale devices [1]. According to single-domain (SD) Landau theory, a hysteresis-free NC state in a ferroelectric might be stabilized in the presence of depolarization fields below a certain critical film thickness tF, SD. However, it is well-known that depolarization fields will cause the formation of domains in ferroelectrics to reduce the depolarization energy [2], which is rarely considered in the literature on NC [3]. The improvident use of SD Landau theory to model NC devices seems to be the main reason for the large discrepancy between experimental data and the current theory [4]. Here, we will show by simulation how anti-parallel domain formation can strongly limit the stability of the NC state in a metal-ferroelectric-insulator-metal (MFIM) structure, which is schematically shown in Fig. 1.

Published
2018

50. A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

Author

Dunkel, S., primary, Trentzsch, M., additional, Richter, R., additional, Moll, P., additional, Fuchs, C., additional, Gehring, O., additional, Majer, M., additional, Wittek, S., additional, Muller, B., additional, Melde, T., additional, Mulaosmanovic, H., additional, Slesazeck, S., additional, Muller, S., additional, Ocker, J., additional, Noack, M., additional, Lohr, D.-A., additional, Polakowski, P., additional, Muller, J., additional, Mikolajick, T., additional, Hontschel, J., additional, Rice, B., additional, Pellerin, J., additional, and Beyer, S., additional

Published
2017
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