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Physical and circuit modeling of HfO2 based ferroelectric memories and devices
- Publication Year :
- 2018
- Publisher :
- Institute of Electrical and Electronics Engineers Inc., 2018.
- Subjects :
- FeFET
ferroelectric memory
modeling
negative capacitance
neuromorphic
synapse
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.od......3674..25073e3406698de63e9b5c02d5580383