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Thermoelectric materials, enabling direct waste-heat to electricity conversion, need to be highly electrically conducting while simultaneously thermally insulating. This is fundamentally challenging since electrical and thermal conduction are usually coupled. Here, we discover that quasi-2D conjugated coordination polymer films exhibit this ideal mix of antithetical properties due to coexistence of defect-tolerant charge transport and defect-sensitive heat propagation. The former is highlighted by the highest conductivities > 2000 S cm-1 with metallic temperature dependence observed in disordered films with paracrystallinity > 10%, while the latter manifests in low, temperature-activated lattice thermal conductivities (< 0.38 W m-1 K-1) originating from small-amplitude, quasi-harmonic lattice dynamics with disorder-limited lifetimes and vibrational scattering length on the order of interatomic spacing. Based on temperature-dependent thermoelectric and magnetotransport experiments we identify a two-carrier (hole-electron), ambipolar metallic transport regime as the origin of relatively small Seebeck coefficients in these materials. Our findings identify conjugated coordination polymers as attractive materials for applications in thermoelectric energy harvesting, (bio)electronics and energy storage., Comment: 28 pages, 5 figures

Thermoelectric materials convert a temperature gradient into a voltage. This phenomenon is relatively well understood for inorganic materials, but much less so for organic semiconductors (OSs). These materials present a challenge because the strong thermal fluctuations of electronic coupling between the molecules result in partially delocalized charge carriers that cannot be treated with traditional theories for thermoelectricity. Here we develop a novel quantum dynamical simulation approach revealing in atomistic detail how the charge carrier wavefunction moves along a temperature gradient in an organic molecular crystal. We find that the wavefunction propagates from hot to cold in agreement with experiment and we obtain a Seebeck coefficient in good agreement with values obtained from experimental measurements that are also reported in this work. Detailed analysis of the dynamics reveals that the directional charge carrier motion is due to the gradient in thermal electronic disorder, more specifically in the spatial gradient of thermal fluctuations of electronic couplings. It causes an increase in the density of thermally accessible electronic states, the delocalization of states and the non-adiabatic coupling between states with decreasing temperature. As a result, the carrier wavefunction transitions with higher probability to a neighbouring electronic state towards the cold side compared to the hot side generating a thermoelectric current. Our dynamical perspective of thermoelectricity suggests that the temperature dependence of electronic disorder plays an important role in determining the magnitude of the Seebeck coefficient in this class of materials, opening new avenues for design of OSs with improved Seebeck coefficients.

The molecular-based ferrimagnetic insulator V(TCNE)x has gained recent interest for efficient spin-wave excitation due to its low Gilbert damping ratio a=4E-5, and narrow ferromagnetic resonance linewidth f=1Oe. Here we report a clean spin pumping signal detected on V(TCNE)x/metal bilayer structures, free from spin rectification or thermal artifacts. On-chip coupling of microwave power is achieved via a coplanar waveguide to measure the in-plane angle-dependence of the inverse spin-Hall effect under ferromagnetic resonance conditions with respect to a constant external magnetic field. A signature of pure spin current from V(TCNE)x is observed in both platinum and permalloy metal layers, demonstrating the utility of V(TCNE)x for magnon spintronics studies in molecule/solid-state heterostructures., Comment: Need to add more simulation results on EM coupling

Magnetic resonance methods offer a unique chance for in-depth study of conductive organic material systems, not only accounts for number of charge carriers, but also allows manipulations of spin dynamics of particles. Here we present a study of continuous-wave electrically detected magnetic resonance on a range of organic conjugate polymers under transistor architecture, with tunability in both carrier concentration and drifting electric field. We demonstrate the general existence of bipolaron between mobile and trapped charges at the magnetic resonance condition, then estimates the wavefunction expansion of charge carriers on their hopping sites along conductive pathways. This finding allows direct observation of energetically disordered trap sites under the charge hopping picture, linking-up the microscopic structural properties to the bulk electronic performances., Comment: No ready for publishing, need more about discussion about the wavefunctions

JISA is a software library, written in Java, aimed at providing an easy, flexible and standardised means of creating experimental control software for physical sciences researchers. Specifically, with an emphasis on enabling measurement code to be written in an instrument-agnostic way, allowing such routines to be reused across multiple different setups without requiring modification. Additionally, it provides a simple means of recording and handling data, as well as pre-built graphical user interface (GUI) "blocks" to enable the relatively easy creation of graphical control systems. Together these allow users to quickly piece together test-and-measurement programs with coherent user interfaces, without requiring much experience of such things., Comment: Submitted to SoftwareX, under review

Solution-processable near-infrared (NIR) photodetectors are urgently needed for a wide range of next-generation electronics, including sensors, optical communications and bioimaging. However, there is currently a compromise between low toxicity and slow (<300 kHz cut-off frequency) organic materials versus faster detectors (>300 kHz cut-off frequency) based on compounds containing toxic lead or cadmium. Herein, we circumvent this trade-off by developing solution-processed AgBiS2 photodetectors with high cut-off frequencies under both white light (>1 MHz) and NIR (approaching 500 kHz) illumination. These high cut-off frequencies are due to the short transit distances of charge-carriers in the AgBiS2 photodetectors, which arise from the strong light absorption of these materials, such that film thicknesses well below 120 nm are adequate to absorb >65% of near-infrared to visible light. By finely controlling the thickness of the photoactive layer, we can modulate the charge-collection efficiency, achieve low dark current densities, and minimize the effects of ion migration to realize fast photodetectors that are stable in air. These outstanding characteristics enable real-time heartbeat sensors based on NIR AgBiS2 photodetectors. # equal contribution, * corresponding authors, Comment: 29 pages, 4 figures, 1 table

The family of hybrid organic-inorganic lead-halide perovskites are the subject of intense interest for optoelectronic applications, from light-emitting diodes to photovoltaics to X-ray detectors. Due to the inert nature of most organic molecules, the inorganic sublattice generally dominates the electronic structure and therefore optoelectronic properties of perovskites. Here, we use optically and electronically active carbazole-based Cz-Ci molecules, where Ci indicates an alkylammonium chain and i indicates the number of CH2 units in the chain, varying from 3-5, as cations in the 2D perovskite structure. By investigating the photophysics and charge transport characteristics of (Cz-Ci)2PbI4, we demonstrate a tunable electronic coupling between the inorganic lead-halide and organic layers. The strongest interlayer electronic coupling was found for (Cz-C3)2PbI4, where photothermal deflection spectroscopy results remarkably demonstrate an organic-inorganic charge transfer state. Ultrafast transient absorption spectroscopy measurements demonstrate ultrafast hole transfer from the photoexcited lead-halide layer to the Cz-Ci molecules, the efficiency of which increases by varying the chain length from i=5 to i=3. The charge transfer results in long-lived carriers (10-100 ns) and quenched emission, in stark contrast with the fast (sub-ns) and efficient radiative decay of bound excitons in the more conventional 2D perovskite (PEA)2PbI4, in which phenylethylammonium (PEA) acts as an inert spacer. Electrical charge transport measurements further support enhanced interlayer coupling, showing increased out-of-plane carrier mobility from i=5 to i=3. This study paves the way for the rational design of 2D perovskites with combined inorganic-organic electronic proper-ties through the wide range of functionalities available in the world of organics., Comment: 16 main text pages + 20 supplemental text pages, 5 main text figures + 19 supplemental figures

Hall effect measurements in doped polymer semiconductors are widely reported, but are difficult to interpret due to screening of Hall voltages by carriers undergoing incoherent transport. Here, we propose a refined analysis for such Hall measurements, based on measuring the Hall coefficient as a function of temperature, and modelling carriers as existing in a regime of variable "deflectability" (i.e. how strongly they "feel" the magnetic part of the Lorentz force). By linearly interpolating each carrier between the extremes of no deflection and full deflection, we demonstrate that it is possible to extract the (time-averaged) concentration of deflectable charge carriers, $\left$, the average, temperature-dependent mobility of those carriers, $\left<\mu_d\right>(T)$, as well as the ratio of conductivity that comes from such deflectable transport, $d(T)$. Our method was enabled by the construction of an improved AC Hall measurement system, as well as an improved data extraction method. We measured Hall bar devices of ion-exchange doped films of PBTTT-C$_{14}$ from 10--300 K. Our analysis provides evidence for the proportion of conductivity arising from deflectable transport, $d(T)$, increasing with doping level, ranging between 15.4% and 16.4% at room temperature. When compared to total charge-carrier-density estimates from independent methods, the values of $\left$ extracted suggest that carriers spend $\sim$37% of their time of flight being deflectable in the most highly doped of the devices measured here. The extracted values of $d(T)$ being less than half this value thus suggest that the limiting factor for conductivity in such highly doped devices is carrier mobility, rather than concentration., Comment: Accepted for publication in APS Physical Review Materials

Investigation of the inherent field-driven charge transport behaviour of 3D lead halide perovskites has largely remained a challenging task, owing primarily to undesirable ionic migration effects near room temperature. In addition, the presence of methylammonium in many high performing 3D perovskite compositions introduces additional instabilities, which limit reliable room temperature optoelectronic device operation. Here, we address both these challenges and demonstrate that field-effect transistors (FETs) based on methylammonium-free, mixed-metal (Pb/Sn) perovskite compositions, that are widely studied for solar cell and light-emitting diode applications, do not suffer from ion migration effects as their pure Pb counterparts and reliably exhibit hysteresis free p-type transport with high mobility reaching 5.4 $cm^2/Vs$, ON/OFF ratio approaching $10^6$, and normalized channel conductance of 3 S/m. The reduced ion migration is also manifested in an activated temperature dependence of the field-effect mobility with low activation energy, which reflects a significant density of shallow electronic defects. We visualize the suppressed in-plane ionic migration in Sn-containing perovskites compared to their pure-Pb counterparts using photoluminescence microscopy under bias and demonstrate promising voltage and current-stress device operational stabilities. Our work establishes FETs as an excellent platform for providing fundamental insights into the doping, defect and charge transport physics of mixed-metal halide perovskite semiconductors to advance their applications in optoelectronic devices., Comment: 26 pages, 5 figures, Satyaprasad P. Senanayak and Krishanu Dey contributed equally

Over the last two decades organic spintronics has developed into a striving field with exciting reports of long spin diffusion lengths and spin relaxation times in organic semiconductors (OSCs). Easily processed and inexpensive, OSCs are considered a potential alternative to inorganic materials for use in spintronic applications. Spin currents have been detected in a wide range of materials, however, there is still uncertainty over the origin of the signals. Recently, we explored spin transport through an organic semiconductor with lateral spin injection and detection architectures, where the injected spin current is detected non-locally via spin-to-charge conversion in an inorganic detector. In this work we show that the widely-used control experiments like linear power dependence and inversion of the signal with the magnetic field are not sufficient evidence of spin transport and can lead to an incorrect interpretation of the signal. Here, we use in-plane angular dependent measurements to separate pure spin signal from parasitic effects arising from spin rectification (SREs). Apart from well established anisotropic magnetoresistance (AMR) and anomalous Hall effect (AHE), we observed a novel effect which we call spurious inverse spin Hall effect (ISHE). It strongly resembles ISHE behaviour, but arises in the ferromagnet rather than the detector meaning this additional effect has to be considered in future work.

Optically addressable spins in materials are important platforms for quantum technologies, such as repeaters and sensors. Identification of such systems in two-dimensional (2d) layered materials offers advantages over their bulk counterparts, as their reduced dimensionality enables more feasible on-chip integration into devices. Here, we report optically detected magnetic resonance (ODMR) from previously identified carbon-related defects in 2d hexagonal boron nitride (hBN). We show that single-defect ODMR contrast can be as strong as 6% and displays a magnetic-field dependence with both positive or negative sign per defect. This bipolarity can shed light into low contrast reported recently for ensemble ODMR measurements for these defects. Further, the ODMR lineshape comprises a doublet resonance, suggesting either low zero-field splitting or hyperfine coupling. Our results offer a promising route towards realising a room-temperature spin-photon quantum interface in hexagonal boron nitride.

Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily from charge trapping by the Coulomb potentials of the dopant counter-ions. Here, we present a combined experimental and theoretical study rebutting this belief. Using a newly developed doping technique, we find the conductivity of several classes of high-mobility conjugated polymers to be strongly correlated with paracrystalline disorder but poorly correlated with ionic size, suggesting that Coulomb traps do not limit transport. A general model for interacting electrons in highly doped polymers is proposed and carefully parameterized against atomistic calculations, enabling the calculation of electrical conductivity within the framework of transient localisation theory. Theoretical calculations are in excellent agreement with experimental data, providing insights into the disordered-limited nature of charge transport and suggesting new strategies to further improve conductivities.

There is a growing interest in utilizing the distinctive material properties of organic semiconductors for spintronic applications. Here, we explore injection of pure spin current from Permalloy into a small molecule system based on dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene (DNTT) at ferromagnetic resonance. The unique tunability of organic materials by molecular design allows us to study the impact of interfacial properties on the spin injection efficiency systematically. We show that both, spin injection efficiency at the interface as well as the spin diffusion length can be tuned sensitively by the interfacial molecular structure and side chain substitution of the molecule.

In the majority of molecular optimization tasks, predictive machine learning (ML) models are limited due to the unavailability and cost of generating big experimental datasets on the specific task. To circumvent this limitation, ML models are trained on big theoretical datasets or experimental indicators of molecular suitability that are either publicly available or inexpensive to acquire. These approaches produce a set of candidate molecules which have to be ranked using limited experimental data or expert knowledge. Under the assumption that structure is related to functionality, here we use a molecular fragment-based graphical autoencoder to generate unique structural fingerprints to efficiently search through the candidate set. We demonstrate that fragment-based graphical autoencoding reduces the error in predicting physical characteristics such as the solubility and partition coefficient in the small data regime compared to other extended circular fingerprints and string based approaches. We further demonstrate that this approach is capable of providing insight into real world molecular optimization problems, such as searching for stabilization additives in organic semiconductors by accurately predicting 92% of test molecules given 69 training examples. This task is a model example of black box molecular optimization as there is minimal theoretical and experimental knowledge to accurately predict the suitability of the additives.

Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron-phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high mobility molecular semiconductors, state-of-the-art quantum mechanical simulations of the vibrational modes and the ensuing electron phonon coupling constants are combined with experimental measurements of the low-frequency vibrations using inelastic neutron scattering and terahertz time-domain spectroscopy. In this way, the long-axis sliding motion is identified as a killer phonon mode, which in some molecules contributes more than 80% to the total thermal disorder. Based on this insight, a way to rationalize mobility trends between different materials and derive important molecular design guidelines for new high mobility molecular semiconductors is suggested., Comment: 10 pages, 5 figures

The tunability of high-mobility organic semi-conductors (OSCs) holds great promise for molecular spintronics. In this study, we show this extreme variability - and therefore potential tunability - of the molecular gyromagnetic coupling ("g-") tensor with respect to the geometric and electronic structure in a much studied class of OSCs. Composed of a structural theme of phenyl- and chalcogenophene (group XVI element containing, five-membered) rings and alkyl functional groups, this class forms the basis of several intensely studied high-mobility polymers and molecular OSCs. We show how in this class the g-tensor shifts, $\Delta g$, are determined by the effective molecular spin-orbit coupling (SOC), defined by the overlap of the atomic spin-density and the heavy atoms in the polymers. We explain the dramatic variations in SOC with molecular geometry, chemical composition, functionalization, and charge life-time using a first-principles theoretical model based on atomic spin populations. Our approach gives a guide to tuning the magnetic response of these OSCs by chemical synthesis.

Low-dimensional magnetic materials with spin-$\frac{1}{2}$ moments can host a range of exotic magnetic phenomena due to the intrinsic importance of quantum fluctuations to their behavior. Here, we report the structure, magnetic structure and magnetic properties of copper(II) thiocyanate, Cu(NCS)$_2$, a one-dimensional coordination polymer which displays low-dimensional quantum magnetism. Magnetic susceptibility, electron paramagnetic resonance (EPR) spectroscopy, $^{13}$C magic-angle spinning nuclear magnetic resonance (MASNMR) spectroscopy, and density functional theory (DFT) investigations indicate that Cu(NCS)$_2$ behaves as a two-dimensional array of weakly coupled antiferromagnetic spin chains ($J_2 = 133(1)$ K, $\alpha = J_1/J_2 = 0.08$). Powder neutron-diffraction measurements confirm that Cu(NCS)$_2$ orders as a commensurate antiferromagnet below $T_\mathrm{N} = 12$ K, with a strongly reduced ordered moment (0.3 $\mu_\mathrm{B}$) due to quantum fluctuations., Comment: 11 pages, 7 figures

The control of spins and spin to charge conversion in organics requires understanding the molecular spin-orbit coupling (SOC), and a means to tune its strength. However, quantifying SOC strengths indirectly through spin relaxation effects has proven diffi- cult due to competing relaxation mechanisms. Here we present a systematic study of the g-tensor shift in molecular semiconductors and link it directly to the SOC strength in a series of high mobility molecular semiconductors with strong potential for future devices. The results demonstrate a rich variability of the molecular g-shifts with the effective SOC, depending on subtle aspects of molecular composition and structure. We correlate the above g -shifts to spin-lattice relaxation times over four orders of magnitude, from 200 {\mu}s to 0.15 {\mu}s, for isolated molecules in solution and relate our findings for isolated molecules in solution to the spin relaxation mechanisms that are likely to be relevant in solid state systems., Comment: Accepted for publication in Nature Communications

Coupling between conduction electrons and localized magnetization is responsible for a variety of phenomena in spintronic devices. This coupling enables to generate spin currents from dynamical magnetization. Due to the nonlinearity of magnetization dynamics, the spin-current emission through the dynamical spin-exchange coupling offers a route for nonlinear generation of spin currents. Here, we demonstrate spin-current emission governed by nonlinear magnetization dynamics in a metal/magnetic insulator bilayer. The spin-current emission from the magnetic insulator is probed by the inverse spin Hall effect, which demonstrates nontrivial temperature and excitation power dependences of the voltage generation. The experimental results reveal that nonlinear magnetization dynamics and enhanced spin-current emission due to magnon scatterings are triggered by decreasing temperature. This result illustrates the crucial role of the nonlinear magnon interactions in the spin-current emission driven by dynamical magnetization, or nonequilibrium magnons, from magnetic insulators.

A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determination of both contact and channel resistance from the analysis of the current voltage characteristics of a single device, with no a-priori assumption on the two parameters. It solves the inconsistencies in the commonly accepted mobility extraction methods and provides new possibilities for the analysis of the injection and transport processes in semiconducting materials., Comment: Submitted to Applied Physics Letters