Back to Search
Start Over
Reversible Oxidative p‑Doping in 2D Tin Halide Perovskite Field-Effect Transistors.
- Source :
- ACS Energy Letters; 4/12/2024, Vol. 9 Issue 4, p1725-1734, 10p
- Publication Year :
- 2024
Details
- Language :
- English
- ISSN :
- 23808195
- Volume :
- 9
- Issue :
- 4
- Database :
- Supplemental Index
- Journal :
- ACS Energy Letters
- Publication Type :
- Academic Journal
- Accession number :
- 176612984
- Full Text :
- https://doi.org/10.1021/acsenergylett.4c00497