Search

Research was conducted to examine the effect of supersonic jets on growth, film quality and uniformity using silicon epitaxy as a model system. A comparison was made between the silicon growth from supersonic jets of SiH4 and the growth from supersonic jets of Si2H6. Results demonstrate that at higher substrate temperatures, the high kinetic energy SiH4 jet exhibited a higher growth rate than the low kinetic energy SiH4 jet despite the fact that the flux of the high energy jet had a factor of 8 lower than the flux of the low energy jet.

One fills orders for industry, the other conjures rare compounds for their own sake. For both men, crystal growing is an obsessive craft Call it a calorie-free Thanksgiving. Victor Moritz [...]

A new model for the growth of polycrystalline Si from SiF4 SiH4 H2 plasma, based on the etching model, depends on rf power and electrode to regulate the F radical concentration. Etching depends on the residence time of the diffused radicals, which is regulated by gas pressure. Optimum crystallinity occurs with high pressure, while an excess of F radicals deteriorates crystallinity.

A study was done on poly-Si thin films formed by recrystallization of alpha-Si either with annealing or ion implantation and subsequent annealing with the complementary optical techniques of apectroscopic ellipsometry and Raman spectroscopy. Results show the formation of silicon oxinitride on the near-surface region of the poly-Si films. The ion implanted and annealed samples showed less disordered material, larger crystalline volume fraction and enhanced grain size compared to those annealed only.

The effects of dopants in the epitaxial growth temperature of silicon films were investigated through rapid thermal processing chemical vapor deposition (RTPCVD) method. Boron and arsenic-doped epitaxial layers were formed from the chemical reaction of arsenic hydroxide with silicon substrate at a temperature of 800 degrees centigrade. Results show that dopant incorporation lowered the epitaxial growth temperature of silicon films.