Growth and characterization of silicon thin films employing supersonic jets of SiH4 on the polysilicon and Si(100)

Research was conducted to examine the effect of supersonic jets on growth, film quality and uniformity using silicon epitaxy as a model system. A comparison was made between the silicon growth from supersonic jets of SiH4 and the growth from supersonic jets of Si2H6. Results demonstrate that at higher substrate temperatures, the high kinetic energy SiH4 jet exhibited a higher growth rate than the low kinetic energy SiH4 jet despite the fact that the flux of the high energy jet had a factor of 8 lower than the flux of the low energy jet.