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205 results on '"Shin, J. C."'

1. Challenges for Doctoral Education in East Asia: A Global and Comparative Perspective

Author

Shin, J. C., Postiglione, Gerard A., and Ho, K. C.

Abstract

East Asian higher education is experiencing a massive growth in doctoral education with the world-class university initiatives. The growth of doctoral education in the region is remarkable especially as seen in the Chinese system which became positioned as the world's second largest doctoral degree-granting system. Yet, there are growing issues in doctoral education related to system reform, graduate employment in a changing job market, program quality, research funding, and even the identity of doctoral education (professional training vs. training next generation scholars). These are globally emerging issues for policy makers and higher education scholars. This article will encourage academic discussions on the challenges and global trends in doctoral education from the comparative perspective of Anglo-American and European systems.

Published
2018
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8. Intersubband Quantum-Box Lasers: Progress and Potential as Uncooled Mid-Infrared Sources

Author

Botez, D., primary, Tsvid, G., additional, D'Souza, M., additional, Shin, J. C., additional, Liu, Z., additional, Park, J. H., additional, Kirch, J., additional, Mawst, L. J., additional, Rathi, M., additional, Kuech, T. F., additional, Vurgaftman, I., additional, Meyer, J., additional, Plant, J., additional, Turner, G., additional, and Zory, P., additional

Published
2010
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13. Fabrication of midinfrared quantum cascade laser via oxygen-enhanced nonselective wet thermal oxidation.

Author

Seibert, C. S., D'Souza, M., Shin, J. C., Mawst, L. J., Botez, D., and Hall, D. C.

Subjects
LASERS, OXIDATION, OXIDES, QUANTUM theory, GALLIUM arsenide
Abstract

A native oxide confined quantum cascade laser operating at λ=5.4 μm was fabricated using oxygen-enhanced nonselective wet thermal oxidation. This process formed an insulating native oxide on the lattice matched In0.53Ga0.47As waveguide core layers and the strain compensated InAlAs/InGaAs active core region after oxidation at 500 °C with 0.7% O2 added relative to the N2 water vapor carrier gas. A device with a threshold current density of Jth=3.2 kA/cm2 was realized. [ABSTRACT FROM AUTHOR]

Published
2011
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14. Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy.

Author

Song, J. D., Park, Y. M., Shin, J. C., Lim, J. G., Park, Y. J., Choi, W. J., Han, I. K., Lee, J. I., Kim, H. S., and Park, C. G.

Subjects
ARSENIC, INDIUM, QUANTUM dots, SEMICONDUCTORS, EPITAXY, PHOTOLUMINESCENCE
Abstract

We compared the structural and optical properties of InAs/GaAs quantum dots grown by migration enhanced epitaxy, with and without arsenic, during indium deposition. The uniformity and size of the quantum dots are enhanced in a sample without arsenic. As a result, narrower and longer wavelength photoluminescence is observed in this sample. Furthermore, the thickness of the wetting layers is reduced by ∼20% in the sample without arsenic, and this result agrees well with the speculation that metallic indium has a smaller driving force for corrugating the InAs wetting layers before they are transformed from two-dimensional to three-dimensional layers. Additionally, the photoluminescence linewidth of the sample without arsenic is insensitive to the cryostat temperature due to two major factors: the reduced thickness of the wetting layers and the enhanced uniformity. In the sample with arsenic, however, the photoluminescence linewidth shows typical anomalies. [ABSTRACT FROM AUTHOR]

Published
2004
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