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Double-perovskite oxides have attracted recent attention due to their attractive functionalities and application potential. In this paper, we demonstrate the effect of dual controls, i.e., the deposition pressure of oxygen (P$_O2$) and lattice mismatch ($\epsilon$), on tuning magnetic properties in epitaxial double-perovskite Sr$_2$FeReO$_6$ films. In a nearly-lattice-matched Sr$_2$FeReO$_6$/SrTiO$_3$ film, the ferrimagnetic-to-paramagnetic phase transition occurs when P$_O2$ is reduced to 30 mTorr, probably due to the formation of Re$^{4+}$ ions that replace the stoichiometric Re$^{5+}$ to cause disorders of $B$-site ions. On the other hand, a large compressive strain or tensile strain shifts this critical P$_O2$ to below 1 mTorr or above 40 mTorr, respectively. The observations could be attributed to the modulation of $B$-site ordering by epitaxial strain through affecting elemental valence. Our results provide a feasible way to expand the functional tunability of magnetic double-perovskite oxides that hold great promise for spintronic devices., Comment: Main text 18 pages, 5 figures; Supplementary information 8 pages, 4 figures

We report the observation of superconductivity in infinite-layer Ca-doped LaNiO

Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin-orbit coupling, 5d transition metal oxides based two-dimensional electron systems (2DESs) have been prospected as one of the potential intrants for modern electronics. However, despite the lighter electron mass, the mobility of carriers, a key requisite for high-performance devices, in 5d-oxides devices remains far behind their 3d-oxides analogs. The carriers mobility in these oxides is significantly hampered by the inevitable presence of defects generated during the growth process. Here, we report very high mobility ($\sim$ 22650 cm$^2$V$^{-1}$s$^{-1}$) of 5d-2DES confined at the LaAlO$_3$/KTaO$_3$ interface. The high mobility, which is beyond the values observed in LaAlO$_3$/SrTiO$_3$ and $\gamma$-Al$_2$O$_3$/SrTiO$_3$ systems in the same carrier-density range, is achieved using the ionic-liquid gating at room temperature. We postulate that the ionic-liquid gating affects the oxygen vacancies and efficiently reduces any disorder at the interface. Investigating density and mobility in a broad range of back-gate voltage, we reveal that the mobility follows the power-law $\mu \propto n^{1.2}$, indicating the very high quality of ionic-liquid-gated LaAlO$_3$/KTaO$_3$ devices, consistent with our postulate. Further, the analysis of the quantum oscillations measured in high magnetic fields confirms that the high-mobility electrons occupy the electronic sub-bands emerging from the Ta:5d orbitals of KTaO$_3$., Comment: 20 pages, 6 figures

Investigating Shubnikov-de Haas (SdH) oscillations in high magnetic fields, we experimentally infer the electronic band structure of the quasi-two-dimensional electron gas (2DEG) at the ionic-liquid gated amorphous ($a$)-${\mathrm{LaAlO}}_{3}/{\mathrm{KTaO}}_{3}$ interface. The angular dependence of SdH oscillations indicates a 2D confinement of a majority of electrons at the interface. However, additional SdH oscillations with an angle-independent frequency observed at high tilt angles indicate the coexistence of 3D charge carriers extending deep into the ${\mathrm{KTaO}}_{3}$. The SdH oscillations measured in magnetic fields perpendicular to the interface show four frequencies corresponding to four 2D subbands with different effective masses ($0.20\phantom{\rule{0.16em}{0ex}}{m}_{e}\ensuremath{-}0.55\phantom{\rule{0.16em}{0ex}}{m}_{e}$). The single-frequency oscillations originating from 3D electrons yields a larger effective mass of $\ensuremath{\sim}0.70\phantom{\rule{0.16em}{0ex}}{m}_{e}$. Overall, the inferred subbands are in good agreement with the theoretical calculations and angle-resolved photoemission spectroscopy studies on 2DEG at ${\mathrm{KTaO}}_{3}$ surface.

The effects of atomic-scale disorder and charge (de)localization hold significant importance, and they provide essential insights to unravel the role that strong and weak correlations play in condensed matter systems. In the case of perovskite oxide heterostructures, while disorders introduced via various external stimuli have strong influences over the (de)localization of interfacial two-dimensional (2D) electrons, these factors alone could not fully account for the system's charge dynamics where interfacial hybridization holds very strong influence. Here, we determine that the displaced 2D free electrons have been localized in the specific hybridized states of the LaAlO3/SrTiO3 interface. This experimental study combines both transport measurements and temperature-dependent x-ray absorption spectroscopy and suggests that the localization of 2D electrons can be induced via temperature reduction or ionic liquid gating. Furthermore, this localization effect is found to be applicable to both amorphous and crystalline interfacial systems. In particular, we demonstrate that interfacial hybridization plays a pivotal role in regulating the 2D electron localization effects. Our study resolves the location where the 2D electrons are localized not only does it highlight the importance of interfacial hybridization but it also opens a new avenue for device fabrication in amorphous film systems where charge localization can be done at much great ease as compared to epitaxial crystalline heterostructures.

Nickel-based complex oxides have served as a playground for decades in the quest for a copper-oxide analog of the high-temperature (high-Tc) superconductivity. They may provide key points towards understanding the mechanism and an alternative route for high-Tc superconductors. The recent discovery of superconductivity in the infinite-layer nickelate thin films has fulfilled this pursuit. Thus far, however, material synthesis remains challenging. The demonstration of perfect diamagnetism is still missing, and understanding of the role of the interface and bulk to the superconducting properties is still lacking. Here, we synthesized high-quality Nd0.8Sr0.2NiO2 thin films with different thicknesses and investigated the interface and strain effects on the electrical, magnetic and optical properties. Perfect diamagnetism is demonstrated, confirming the occurrence of superconductivity in the thin films. Unlike the thick films in which the normal-state Hall coefficient (RH) changes signs as the temperature decreases, the RH of films thinner than 6.1 nm remains negative, suggesting a thickness-driven band structure modification. Moreover, X-ray absorption spectroscopy reveals the Ni-O hybridization nature in doped infinite-layer nickelates, and the hybridization is enhanced as the thickness decreases. Consistent with band structure calculations on the nickelate/SrTiO3 heterostructure, the interface and strain effect induce a dominating electron-like band in the ultrathin film, thus causing the sign change of the RH.

Plasmons, collective excitations of charge density, have attracted much interest in fundamental science and applications. While plasmons have been observed in metal-like phase of high-Tc supercondu...

Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ interface at room temperature. The polarity of a ~3.2 nm Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin film is preserved with a two-dimensional mobile carrier density of ~0.05 electron per unit cell. We show that the electronic reconstruction resulting from the competition between the built-in electric field of LaAlO$_3$ and the polarization of Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ is responsible for this unusual two-dimensional conducting polar phase. The general concept of exploiting mutually exclusive properties at oxide interfaces via electronic reconstruction may be applicable to other strongly-correlated oxide interfaces, thus opening windows to new functional nanoscale materials for applications in novel nanoelectronics., Comment: Main text: 25 pages, 4 figures Supplementary note: 19 pages, 11 figures

Efficient photocatalysis is important for sustainable energy. Recently, an unconventional photocatalyst based on intrinsic plasmon, called intrinsic plasmonic photocatalyst (IPP), seems promising for higher efficiency in hydrogen evolution. This catalyst seems to benefit from the advantages of visible light absorption, plasmon-assisted hot carrier generation, and good catalytic stability over conventional semiconductor photocatalysts. In this work, we report the relative hydrogen evolution efficiency under visible light irradiation of a family of IPP based on alkaline earth niobates (MNbO3, where M = Ca, Sr, or Ba), with efficiency of CaNbO3 > SrNbO3 > BaNbO3. The contributions of electron–phonon coupling time constant and solar energy absorption to the hydrogen evolution efficiency are identified as key based on our comprehensive study and characterization of carrier density (1022 cm–3), plasmon absorption, carrier dynamics, and surface area. This study demonstrates a generic approach to create a family of IPPs and further validates the role of solar energy absorption by intrinsic plasmon resonance in the enhancement of photocatalytic efficiency. Ministry of Education (MOE) National Research Foundation (NRF) Accepted version The NUS researchers acknowledge Singapore National Research Foundation under its Competitive Research Funding ’Oxide Electronics on silicon beyond Moore’ (NRF-CRP15-2015-01). X.R.W. acknowledges the support from the Nanyang Assistant Professorship grant from Nanyang Technological University, Academic Research Fund Tier 1 (RG108/17 and RG177/18) from Singapore Ministry of Education. P.Y. is supported by SSLS via NUS Core Support (C-380-003-003-001). The authors thank the Singapore Synchrotron Light Source (SSLS) for providing the facility necessary for conducting the research. The laboratory is a National Research Infrastructure under the National Research Foundation (NRF) Singapore. The authors also thank for the support from Dr. Zhongxin Chen for the photocatalytic reaction measurements. The computational work for this article was partially performed on resources of the National Supercomputing Centre, Singapore (https://www.nscc.sg).

We report the observation of superconductivity in infinite-layer Ca-doped LaNiO$_2$ (La$_{1-x}$Ca$_x$NiO$_2$) thin films and construct their phase diagram. Unlike the metal-insulator transition in Nd- and Pr-based nickelates, the undoped and underdoped La1-xCaxNiO2 thin films are entirely insulating from 300 K down to 2 K. A superconducting dome is observed at 0.15, Comment: 26 pages, 3 main figures, 6 supplementary figures

The magnetic Weyl fermion originates from the time reversal symmetry (TRS)-breaking in magnetic crystalline structures, where the topology and magnetism entangle with each other. Therefore, the magnetic Weyl fermion is expected to be effectively tuned by the magnetic field and electrical field, which holds promise for future topologically protected electronics. However, the electrical field control of the magnetic Weyl fermion has rarely been reported, which is prevented by the limited number of identified magnetic Weyl solids. Here, the electric field control of the magnetic Weyl fermion is demonstrated in an epitaxial SrRuO

Recently, Topological Hall Effect (THE) has been unravelled in various perovskite iridate, ruthenate and manganite interfaces, suggesting the presence of magnetic Skyrmion-like bubbles. Among the materials and sample structures investigated so far, the physical properties were not free from influences of substrates, which are templates for crystalline epitaxial growth. Additional contributions of Dzyaloshinskii-Moriya Interaction or Berry curvatures by the substrates may originate from several structural factors such as in-plane strain, octahedral rotation or terminations. In this report, we employ the water-soluble Sr3Al2O6 sacrificial buffer layer to prepare freestanding SrRuO3/SrIrO3 heterostructures with high-quality interfaces, and THE-like humps are observed up to 90 K. Analysing the Hall signal with the rotation of magnetic field direction suggests there are magnetically decoupled regions. This scheme also paves the way for several magnetic texture imaging techniques in transmission mode for future studies.

Exploring exotic interface magnetism due to charge transfer and strong spin-orbit coupling has profound application in the future development of spintronic memory. Here, the emergence and tuning of topological Hall effect (THE) from a CaMnO3 /CaIrO3 /CaMnO3 trilayer structure are studied in detail, which suggests the presence of magnetic Skyrmion-like bubbles. First, by tilting the magnetic field direction, the evolution of the Hall signal suggests a transformation of Skyrmions into topologically-trivial stripe domains, consistent with behaviors predicted by micromagnetic simulations. Second, by varying the thickness of CaMnO3 , the optimal thicknesses for the THE signal emergence are found, which allow identification of the source of Dzyaloshinskii-Moriya interaction (DMI) and its competition with antiferromagnetic superexchange. Employing high-resolution transmission electron microscopy, randomly distributed stacking faults are identified only at the bottom interface and may avoid mutual cancellation of DMI. Last, a spin-transfer torque experiment also reveals a low threshold current density of ≈109 A m-2 for initiating the bubbles' motion. This discovery sheds light on a possible strategy for integrating Skyrmions with antiferromagnetic spintronics.

Infinite-layer Nd_{1-x}Sr_{x}NiO_{2} thin films with Sr doping level x from 0.08 to 0.3 are synthesized and investigated. We find a superconducting dome x between 0.12 and 0.235 accompanied by a weakly insulating behavior in both under- and overdoped regimes. The dome is akin to that in the electron-doped 214-type and infinite-layer cuprate superconductors. For x≥0.18, the normal state Hall coefficient (R_{H}) changes the sign from negative to positive as the temperature decreases. The temperature of the sign changes decreases monotonically with decreasing x from the overdoped side and approaches the superconducting dome at the midpoint, suggesting a reconstruction of the Fermi surface with the dopant concentration across the dome.

Disorder-induced magnetoresistance (MR) effect is quadratic at low perpendicular magnetic fields and linear at high fields. This effect is technologically appealing, especially in the two-dimensional (2D) materials such as graphene, since it offers potential applications in magnetic sensors with nanoscale spatial resolution. However, it is a great challenge to realize a graphene magnetic sensor based on this effect because of the difficulty in controlling the spatial distribution of disorder and enhancing the MR sensitivity in the single-layer regime. Here, we report a room-temperature colossal MR of up to 5,000% at 9 T in terraced single-layer graphene. By laminating single-layer graphene on a terraced substrate, such as TiO2 terminated SrTiO3, we demonstrate a universal one order of magnitude enhancement in the MR compared to conventional single-layer graphene devices. Strikingly, a colossal MR of >1,000% was also achieved in the terraced graphene even at a high carrier density of ~1012 cm-2. Systematic studies of the MR of single-layer graphene on various oxide- and non-oxide-based terraced surfaces demonstrate that the terraced structure is the dominant factor driving the MR enhancement. Our results open a new route for tailoring the physical property of 2D materials by engineering the strain through a terraced substrate., 64 pages; Main 31 pages, 4 figures; Supplementary 33 pages, 18 figures

Using interlayer interaction to control functional heterostructures with atomic-scale designs has become one of the most effective interface-engineering strategies nowadays. Here, we demonstrate the effect of a crystalline LaFeO3 buffer layer on amorphous and crystalline LaAlO3/SrTiO3 heterostructures. The LaFeO3 buffer layer acts as an energetically favored electron acceptor in both LaAlO3/SrTiO3 systems, resulting in modulation of interfacial carrier density and hence metal-to-insulator transition. For amorphous and crystalline LaAlO3/SrTiO3 heterostructures, the metal-to-insulator transition is found when the LaFeO3 layer thickness crosses 3 and 6 unit cells, respectively. Such different critical LaFeO3 thicknesses are explained in terms of distinct characteristic lengths of the redox-reaction-mediated and polar-catastrophe-dominated charge transfer, controlled by the interfacial atomic contact and Thomas-Fermi screening effect, respectively. Our results not only shed light on the complex interlayer charge transfer across oxide heterostructures but also provides a new route to precisely tailor the charge-transfer process at a functional interface., 40 Pages, 14 Figures, 1 Table

Neurogenic bladder disorders are common among patients with spinal cord lesions, which often result in upper and lower urinary tract complications. Urinary tract infection has remained the most frequent type of infection in this population. Our aim is to review systematically the literature on the outcome of different intervention methods to reduce urinary tract infection incidence. A literature search was conducted in the database of Medline, PubMed, Embase, and Scopus. After screening 1559 articles, 42 were included in this review. The intervention methods can be categorized into the four following groups: (1) indwelling catheterization and intermittent catheterization, (2) medications, (3) surgery, and (4) others. Intermittent catheterization is still the most recommended treatment for persons with spinal cord lesions. Hydrophilic catheters are more suitable for adults than children because of complex handling. Bladder management with spontaneous voiding is initially considered for infants and toddlers with spina bifida. Antibiotics treatment should be based on the results of urine cultures. Shortening the course of antibiotics treatment can reduce its adverse effects but may increase urinary tract infection recurrence. Because botulinum toxin injections and bladder surgery can improve urodynamic function, both are conducive toward lowering urinary tract infection incidence.

Electrical control of material properties based on ionic liquids (IL) has seen great development and emerging applications in the field of functional oxides, mainly understood by the electrostatic and electrochemical gating mechanisms. Compared to the fast, flexible, and reproducible electrostatic gating, electrochemical gating is less controllable owing to the complex behaviors of ion migration. Here, the interface‐dependent oxygen migration by electrochemical gating is resolved at the atomic scale in the LaAlO3–SrTiO3 system through ex situ IL gating experiments and on‐site atomic‐resolution characterization. The difference between interface structures leads to the controllable electrochemical oxygen migration by filling oxygen vacancies. The findings not only provide an atomic‐scale insight into the origin of interface‐dependent electrochemical gating but also demonstrate an effective way of engineering interface structure to control the electrochemical gating., The interface‐dependent oxygen migration by electrochemical gating is resolved at the atomic scale in the LaAlO3–SrTiO3 system through ex situ ionic liquid gating experiments and on‐site atomic‐resolution characterization. The difference between interface structures leads to the controllable electrochemical oxygen migration by filling oxygen vacancies.

We report the control of the interplane magnetic exchange coupling in CaIrO3 perovskite thin films and superlattices with SrTiO3. By analyzing the anisotropic magneto-transport data, we demonstrate...

Despite several attempts, the intimate electronic structure of two-dimensional electron systems buried at the interface between LaAlO3 and SrTiO3 still remains to be experimentally revealed. Here, we investigate the transport properties of a high-mobility quasi-two-dimensional electron gas at this interface under high magnetic field (55 T) and provide new insights for electronic band structure by analyzing the Shubnikov-de Haas oscillations. Interestingly, the quantum oscillations are not 1∕B-periodic and produce a highly non-linear Landau plot (Landau level index versus 1/B). We explore different scenarios leading to 1/B-aperiodic oscillations where the charge and the chemical potential vary as the magnetic field increases. Overall, the magneto-transport data are discussed in light of high-resolution scanning transmission electron microscopy (HRSTEM) analysis of the interface as well as calculations from density functional theory.

Large polarons have been of significant recent technological interest as they screen and protect electrons from point-scattering centers. Anatase TiO2 is a model system for studying large polarons as they can be studied systematically over a wide range of temperature and carrier density. The electronic and magneto transport properties of reduced anatase TiO2 epitaxial thin films are analyzed considering various polaronic effects. Unexpectedly, with increasing carrier concentration, the mobility increases, which rarely happens in common metallic systems. We find that the screening of the electron–phonon (e–ph) coupling by excess carriers is necessary to explain this unusual dependence. We also find that the magnetoresistance could be decomposed into a linear and a quadratic component, separately characterizing the carrier transport and trapping as a function of temperature, respectively. The various transport behaviors could be organized into a single phase diagram, which clarifies the evolution of large p...

Complex-oxide materials exhibit physical properties that involve the interplay of charge and spin degrees of freedom. However, an ambipolar oxide that is able to exhibit both electron-doped and hole-doped ferromagnetism in the same material has proved elusive. Here we report ambipolar ferromagnetism in LaMnO3, with electron–hole asymmetry of the ferromagnetic order. Starting from an undoped atomically thin LaMnO3 film, we electrostatically dope the material with electrons or holes according to the polarity of a voltage applied across an ionic liquid gate. Magnetotransport characterization reveals that an increase of either electron-doping or hole-doping induced ferromagnetic order in this antiferromagnetic compound, and leads to an insulator-to-metal transition with colossal magnetoresistance showing electron–hole asymmetry. These findings are supported by density functional theory calculations, showing that strengthening of the inter-plane ferromagnetic exchange interaction is the origin of the ambipolar ferromagnetism. The result raises the prospect of exploiting ambipolar magnetic functionality in strongly correlated electron systems., An ambipolar ferromagnet with both electron- and hole-doped ferromagnetism in a single material would facilitate understanding of ferromagnetic semiconductors for spintronic applications. Here the authors demonstrate ambipolar ferromagnetism in LaMnO3, using ionic liquid gating enabled electrostatic doping to produce electron–hole asymmetry.

Engineering ferromagnetism, by modulating its magnitude or anisotropy, is an important topic in the field of magnetism and spintronics. Among different types of magnetic materials, ferromagnetic insulators, in which magnetic moment unusually coexists with localized electrons, are of particular interest. Here, we report a remarkable interfacial enhancement of the ferromagnetism by adding one unit-cell LaAlO3 adjacent to an insulating LaMnO3 ultrathin film. The enhancement of ferromagnetism is explained in terms of charge transfer at the interface, as evidenced by X-ray absorption spectroscopy and ab initio calculations. This study demonstrates an effective and dramatic approach to modulate the functionality of ferromagnetic insulators, contributing to the arsenal of engineering techniques for future spintronics.

The magnetic Weyl fermion originates from the time reversal symmetry (TRS)-breaking in magnetic crystalline structures, where the topology and magnetism entangle with each other. Therefore, the magnetic Weyl fermion is expected to be effectively tuned by the magnetic field and electrical field, which holds promise for future topologically protected electronics. However, the electrical field control of the magnetic Weyl fermion has rarely been reported, which is prevented by the limited number of identified magnetic Weyl solids. Here, the electric field control of the magnetic Weyl fermion is demonstrated in an epitaxial SrRuO3 (111) thin film. The magnetic Weyl fermion in the SrRuO3 films is indicated by the chiral anomaly induced magnetotransport, and is verified by the observed Weyl nodes in the electronic structures characterized by the angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. Through the ionic-liquid gating experiment, the effective manipulation of the Weyl fermion by electric field is demonstrated, in terms of the sign-change of the ordinary Hall effect, the nonmonotonic tuning of the anomalous Hall effect, and the observation of the linear magnetoresistance under proper gating voltages. The work may stimulate the searching and tuning of Weyl fermions in other magnetic materials, which are promising in energy-efficient electronics.

Electrolyte gating is widely used to induce large carrier density modulation on solid surfaces to explore various properties. Most of past works have attributed the charge modulation to electrostatic field effect. However, some recent reports have argued that the electrolyte gating effect in VO2, TiO2 and SrTiO3 originated from field-induced oxygen vacancy formation. This gives rise to a controversy about the gating mechanism, and it is therefore vital to reveal the relationship between the role of electrolyte gating and the intrinsic properties of materials. Here, we report entirely different mechanisms of electrolyte gating on two high-Tc cuprates, NdBa2Cu3O7-{\delta} (NBCO) and Pr2-xCexCuO4 (PCCO), with different crystal structures. We show that field-induced oxygen vacancy formation in CuO chains of NBCO plays the dominant role while it is mainly an electrostatic field effect in the case of PCCO. The possible reason is that NBCO has mobile oxygen in CuO chains while PCCO does not. Our study helps clarify the controversy relating to the mechanism of electrolyte gating, leading to a better understanding of the role of oxygen electro migration which is very material specific., Comment: 4 figures; Supporting Information included at the end of the main text

In article number 1900446, Shi Jie Wang, Wenjing Zhang, Andrivo Rusydi, Andrew T. S. Wee, and co‐workers observe high‐energy excitons that are generated by a new mechanism in monolayer‐MoS2 on SrTiO3, which are attributed to the change in many‐body interactions that couples with interfacial orbital‐hybridization. The interfacial interactions lead to a fermi‐surface feature at the interface. The results provide an understanding of 2D‐transition metal dichalcogenides heterointerfaces and show the crucial role that many‐body interactions play at the atomic level.

Interface-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking are of importance for fundamental physics and device applications. How interfaces affect the interplay between charge, spin, orbital, and lattice degrees of freedom is the key to boosting device performance. In LaMnO

Ferromagnet/two-dimensional transition-metal dichalcogenide (FM/2D TMD) interfaces provide attractive opportunities to push magnetic information storage to the atomically thin limit. Existing work has focused on FMs contacted with mechanically exfoliated or chemically vapor-deposition-grown TMDs, where clean interfaces cannot be guaranteed. Here, we report a reliable way to achieve contamination-free interfaces between ferromagnetic CoFeB and molecular-beam epitaxial MoSe2. We show a spin reorientation arising from the interface, leading to a perpendicular magnetic anisotropy (PMA), and reveal the CoFeB/2D MoSe2 interface allowing for the PMA development in a broader CoFeB thickness-range than common systems such as CoFeB/MgO. Using X-ray magnetic circular dichroism analysis, we attribute generation of this PMA to interfacial d-d hybridization and deduce a general rule to enhance its magnitude. We also demonstrate favorable magnetic softness and considerable magnetic moment preserved at the interface and theoretically predict the interfacial band matching for spin filtering. Our work highlights the CoFeB/2D MoSe2 interface as a promising platform for examination of TMD-based spintronic applications and might stimulate further development with other combinations of FM/2D TMD interfaces.

We present a new measurement method which can be used to image gap nodal structure of superconductors whose pairing symmetry is under debate. This technique utilizes a high quality factor microwave resonance involving the sample of interest. While supporting a circularly symmetric standing wave current pattern, the sample is perturbed by a scanned laser beam, creating a photoresponse that was previously shown to reveal the superconducting gap anisotropy. Simulation and the measurement of the photoresponse of an unpatterned Nb film show less than 8\% anisotropy, as expected for a superconductor with nearly isotropic energy gap along with expected systematic uncertainty. On the other hand, measurement of a YBa$_2$Cu$_3$O$_{7-\delta}$ thin film shows a clear 4-fold symmetric image with $\mathtt{\sim}12.5$\% anisotropy, indicating the well-known 4-fold symmetric $d_{x^2-y^2}$ gap nodal structure in the $ab$-plane. The deduced gap nodal structure can be further cross-checked by low temperature surface impedance data, which is simultaneously measured. The important advantage of the presented method over the previous spiral resonator method is that it does not require a complicated lithographic patterning process which limits one from testing various kinds of materials due to photoresponse arising from patterning defects. This advantage of the presented technique, and the ability to measure unpatterned samples such as planar thin films and single crystals, enables one to survey the pairing symmetry of a wide variety of unconventional superconductors., Comment: 11 pages, 10 figures

Interface‐driven magnetic effects and phenomena associated with spin–orbit coupling and intrinsic symmetry breaking are of importance for fundamental physics and device applications. How interfaces affect the interplay between charge, spin, orbital, and lattice degrees of freedom is the key to boosting device performance. In LaMnO3/SrTiO3 (LMO/STO) polar–nonpolar heterostructures, electronic reconstruction leads to an antiferromagnetic to ferromagnetic transition, making them viable for spin filter applications. The interfacial electronic structure plays a critical role in the understanding of the microscopic origins of the observed magnetic phase transition, from antiferromagnetic at 5 unit cells (ucs) of LMO or below to ferromagnetic at 6 ucs or above, yet such a study is missing. Here, an atomic scale understanding of LMO/STO ambipolar ferromagnetism is offered by quantifying the interface charge distribution and performing first‐principles density functional theory (DFT) calculations across this abrupt magnetic transition. It is found that the electronic reconstruction is confined within the first 3 ucs of LMO from the interface, and more importantly, it is robust against oxygen nonstoichiometry. When restoring stoichiometry, an enhanced ferromagnetic insulating state in LMO films with a thickness as thin as 2 nm (5 uc) is achieved, making LMO readily applicable as barriers in spin filters. Ministry of Education (MOE) Nanyang Technological University National Research Foundation (NRF) Accepted version M.L. and C.T. contributed equally to this work. The authors thank Prof. J. M. D. Coey for discussion on the experimental results. This work is supported by the Lee Kuan Yew Postdoctoral Fellowship through a Singapore Ministry of Education Tier 1 (Grant R-284- 000-158-114). X.R.W. acknowledges support from the Nanyang Assistant Professorship grant from Nanyang Technological University and Academic Research Fund Tier 1 (RG108/17 and RG177/18) and Tier 3 (MOE2018-T3-1-002) from the Singapore Ministry of Education. S.J.P. acknowledges support from the National University of Singapore and the Ministry of Education under its Tier 2 Grant (MOE2017-T2-1-129). A.A. acknowledges the support from NUS Academic Research Fund (No. R-144-000-391-114 and No. R-144-000-403- 114) and the Singapore National Research Foundation (NRF) under the Competitive Research Programs (CRP Grant No. NRF-CRP15-2015-01).

The erasable and recreatable 2D electron gas at SrTiO3-based heterointerface paves the way towards future novel electronics., While benefiting greatly from electronics, our society also faces a major problem of electronic waste, which has already caused environmental pollution and adverse human health effects. Therefore, recyclability becomes a must-have feature in future electronics. Here, we demonstrate an erasable and recreatable two-dimensional electron gas (2DEG), which can be easily created and patterned by depositing a water-dissolvable overlayer of amorphous Sr3Al2O6 (a-SAO) on SrTiO3 (STO) at room temperature. The 2DEG can be repeatedly erased or recreated by depositing the a-SAO or dissolving in water, respectively. Photoluminescence results show that the 2DEG arises from the a-SAO–induced oxygen vacancy. Furthermore, by gradually depleting the 2DEG, a transition of nonlinear to linear Hall effect is observed, demonstrating an unexpected interfacial band structure. The convenience and repeatability in the creation of the water-dissolvable 2DEG with rich physics could potentially contribute to the exploration of next generation electronics, such as environment-friendly or water-soluble electronics.

Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ (LAO/STO) interface through ionic liquid-assisted electric field effect. By changing the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19380 cm$^2$/Vs are realized, leading to quantum oscillations of the conductivity at the LAO/STO interface. The present results suggest that high-mobility oxide interfaces which exhibit quantum phenomena could be obtained by ionic liquid-assisted field effect., 22 pages, 4 figures, ACS Nano, March 09, 2016

Large polarons have been of significant recent technological interest as they screen and protect electrons from point-scattering centers. Anatase TiO

Engineering ferromagnetism, by modulating its magnitude or anisotropy, is an important topic in the field of magnetism and spintronics. Among different types of magnetic materials, ferromagnetic insulators, in which magnetic moment unusually coexists with localized electrons, are of particular interest. Here, we report a remarkable interfacial enhancement of the ferromagnetism by adding one unit-cell LaAlO

A modified sol–gel (MSG) method was developed to synthesize perovskite La1−x Sr x MnO3 (x = 0.2, 0.4, 0.6, 0.8) with large specific surface area that allows for control of their particle size from the micrometer level to the nanometer level with novel nanoporous structure. The MSG method utilized carbon black (Vulcan XC-72R) as a pore-forming material during the preparation process. Two important process parameters, the calcination temperature and the pore former material addition, were investigated to control the size of the La1−x Sr x MnO3 particles. The phase evolution of La1−x Sr x MnO3 powders was investigated by thermogravimetric analysis (TG/DSC) and X-ray diffraction pattern. The results showed that the pure La0.6Sr0.4MnO3 phase has been obtained at about 550 °C in air, which is lowered around 150 °C comparing to conventional sol–gel method. In scanning electron microscope studied, it presented novel homogeneous nanoporous morphology with the average particle size from 30 to 100 nm. Based on the Brunauer–Emmett–Teller method analysis, the specific surface area of La1−x Sr x MnO3 was significantly influenced by the calcination temperature, the pore former material addition and the strontium content. The largest specific surface area of La0.2Sr0.8MnO3 reached 114.3 m2/g.

The ability to change states using voltage in ferroelectric tunnel junctions (FTJs) offers a route for lowering the switching energy of memories. Enhanced tunneling electroresistance in FTJ can be achieved by asymmetric electrodes or introducing metal–insulator transition interlayers. However, a fundamental understanding of the role of each interface in a FTJ is lacking and compatibility with integrated circuits has not been explored adequately. Here, we report an incisive study of FTJ performance with varying asymmetry of the electrode/ferroelectric interfaces. Surprisingly high TER (∼400%) can be achieved at BaTiO3 layer thicknesses down to two unit cells (∼0.8 nm). Further our results prove that band offsets at each interface in the FTJs control the TER ratio. It is found that the off state resistance (ROff) increases much more rapidly with the number of interfaces compared to the on state resistance (ROn). These results are promising for future low energy memories.

Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3 (STO) crystals and LaAlO3 (LAO) overlayer through the measurements of electrical transport, X-ray absorption spectroscopy (XAS) and photoluminescence (PL) spectra. We found that oxygen vacancies (Ovac) were filled selectively and irreversibly after gating due to oxygen electromigration at the amorphous LAO/STO interface, resulting in a reconstruction of its interfacial band structure. Because of the filling of Ovac, the amorphous interface also showed an enhanced electron mobility and quantum oscillation of the conductance. Further, the filling effect could be controlled by the degree of the crystallinity of the LAO overlayer by varying the growth temperatures. Our results reveal the different effects induced by electrolyte gating, providing further clues to understand the mechanism of electrolyte gating on buried interfaces and also opening a new avenue for constructing high-mobility oxide interfaces., 5 figures; Supplementary materials included at the end of the main text

The quasi-two-dimensional electron gas at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility $(\mathrm{L}{\mathrm{a}}_{0.3}\mathrm{S}{\mathrm{r}}_{0.7})(\mathrm{A}{\mathrm{l}}_{0.65}\mathrm{T}{\mathrm{a}}_{0.35}){\mathrm{O}}_{3}/\mathrm{SrTi}{\mathrm{O}}_{3}$ interface. Before oxygen annealing, the as-grown interface exhibits a high electron density and electron occupancy of two subbands: higher-mobility electrons (${\ensuremath{\mu}}_{1}\ensuremath{\approx}{10}^{4}\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{2}\phantom{\rule{0.16em}{0ex}}{\mathrm{V}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\mathrm{s}}^{\ensuremath{-}1}$ at 2 K) occupy the lower-energy $3{d}_{\mathrm{xy}}$ subband, while lower-mobility electrons (${\ensuremath{\mu}}_{1}\ensuremath{\approx}{10}^{3}\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{2}\phantom{\rule{0.16em}{0ex}}{\mathrm{V}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\mathrm{s}}^{\ensuremath{-}1}$ at 2 K) propagate in the higher-energy $3{d}_{\mathrm{xz}/\mathrm{yz}}$-dominated subband. After removing oxygen vacancies by annealing in oxygen, only a single type of $3{d}_{\mathrm{xy}}$ electrons remain at the annealed interface, showing tunable Shubnikov--de Haas oscillations below 9 T at 2 K and an effective mass of $0.7{m}_{\mathrm{e}}$. By contrast, no oscillation is observed at the as-grown interface even when electron mobility is increased to $50\phantom{\rule{4pt}{0ex}}000\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{2}\phantom{\rule{0.16em}{0ex}}{\mathrm{V}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\mathrm{s}}^{\ensuremath{-}1}$ by gating voltage. Our results reveal the important roles of both carrier mobility and subband occupancy in tuning the quantum transport at oxide interfaces.

Anisotropic magnetoresistance (AMR) was observed by Lord Kelvin one-and-half centuries ago in iron and nickel. The resistance of these ferromagnetic conductors showed a few percent change when a magnetic field was applied along or across the current. Subsequently, a 20% AMR was demonstrated in alloys of nickel and iron (permalloys). Efforts have then been devoted to extend this effect in multifunctional materials. The oxide heterostructure exhibiting two-dimensional electron liquid is one of the potential candidates as it has shown to exhibit emergent magnetic ordering, strong spin-orbit interactions, and anisotropic magnetoresistance. Here we show a giant crystalline AMR as large as 57% to 104% in anisotropic quantum wells based on nonmagnetic perovskite oxides $\mathrm{LaAl}{\mathrm{O}}_{3}$ and $\mathrm{SrTi}{\mathrm{O}}_{3}$, providing an alternative way in tailoring AMR with an extremely large effect. The AMR maximum appears when the magnetic field points along the in-plane $[1\overline{1}0]$ direction, irrespective of the direction of current flow, which is consistent with the idea of crystalline AMR. Data analysis and density functional theory calculation show that the observed giant crystalline AMR mainly originates from the strong anisotropic spin-orbit field at the interface due to its unique elliptical Fermi surface related to its orbital configuration and reconstruction. This work demonstrates that perovskite oxide interface is a unique platform for orbital physics.

Resistive switching phenomena form the basis of competing memory technologies. Among them, resistive switching, originating from oxygen vacancy migration (OVM), and ferroelectric switching offer two promising approaches. OVM in oxide films/heterostructures can exhibit high/low resistive state via conducting filament forming/deforming, while the resistive switching of ferroelectric tunnel junctions (FTJs) arises from barrier height or width variation while ferroelectric polarization reverses between asymmetric electrodes. Here the authors demonstrate a coexistence of OVM and ferroelectric induced resistive switching in a BaTiO3 FTJ by comparing BaTiO3 with SrTiO3 based tunnel junctions. This coexistence results in two distinguishable loops with multi-nonvolatile resistive states. The primary loop originates from the ferroelectric switching. The second loop emerges at a voltage close to the SrTiO3 switching voltage, showing OVM being its origin. BaTiO3 based devices with controlled oxygen vacancies enable us to combine the benefits of both OVM and ferroelectric tunneling to produce multistate nonvolatile memory devices.