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This book reveals the origin of the excellent properties of hydrogenated semiconductor materials and their great potential for nanoelectronics, renewable energy, and biological applications by systematically analysing the interrelationships and physical scenarios involved in hydrogenated surface engineering, structure, physical properties, and functions. This book addresses science-passionate readers like scientists and R&D engineers who are interested in synthesis, properties and applications of emerging hydrogenated semiconductor materials, providing them with a quick overview of the latest developments in these fields, and new ideas along with methods for their research works.

The book presents the basic steps and the technical implementation of individual processes for microelectronic circuit integration in silicon. Interaction and influences of e. g. oxidation, etching, doping and thermal processes for integrating CMOS- and Bipolar circuits are discussed in detail, beginning with the purification of silicon up to the encapsulated integrated circuit. It includes modern processes like atomic layer deposition and etching for nanoscale structures and compares improvements like silicide contacts, copper metallization, high-k dielectrics, and SOI and FINFET structures. All processes are presented looking from the process engineer's view.

This book will provide readers with a good overview of some of most recent advances in the field of High-Z materials. There will be a good mixture of general chapters in both technology and applications in opto-electronics, X-ray detection and emerging optoelectronics applications. The book will have an in-depth review of the research topics from world-leading specialists in the field.

IV–VI and IV–VI2 semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic devices as light-emitting diodes and solar cells. The electrical properties of these semiconductors can also be tuned by adding impurity atoms. Because of their wide application in various devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. Doping with impurities is a common method of modifying and diversifying the properties of physical and chemical semiconductors. This book covers all known information about phase relations in quaternary systems based on IV–VI and IV–VI2 semiconductors, providing the first systematic account of phase equilibria in quaternary systems based on IV–VI and IV–VI2 semiconductors and making research originally published in Ukrainian and Russian accessible to the wider scientific community. This book will be of interest to undergraduate and graduate students studying materials science, solid-state chemistry, and engineering. It will also be relevant for researchers at industrial and national laboratories, in addition to phase diagram researchers, inorganic chemists, and solid-state physicists.Key Features: Provides up-to-date experimental and theoretical information A source of information for synthesizing semiconducting materials with predetermined properties Delivers a critical evaluation of many industrially important systems presented in the form of two-dimensional sections for the condensed phases

”Quantum Phenomena do not occur in a Hilbert space. They occur in a laboratory”. - Asher Peres Semiconductor physics is a laboratory to learn and discover the concepts of quantum mechanics and thermodynamics, condensed matter physics, and materials science, and the payoffs are almost immediate in the form of useful semiconductor devices. Debdeep Jena has had the opportunity to work on both sides of the fence - on the fundamental materials science and quantum physics of semiconductors, and in their applications in semiconductor electronic and photonic devices. In Quantum Physics of Semiconductors and Nanostructures, Jena uses this experience to make each topic as tangible and accessible as possible to students at all levels. Consider the simplest physical processes that occur in semiconductors: electron or hole transport in bands and over barriers, collision of electrons with the atoms in the crystal, or when electrons and holes annihilate each other to produce a photon. The correct explanation of these processes require a quantum mechanical treatment. Any shortcuts lead to misconceptions that can take years to dispel, and sometimes become roadblocks towards a deeper understanding and appreciation of the richness of the subject. A typical introductory course on semiconductor physics would then require prerequisites of quantum mechanics, statistical physics and thermodynamics, materials science, and electromagnetism. Rarely would a student have all this background when (s)he takes a course of this nature in most universities. Jena's work fills in these gaps and gives students the background and deeper understanding of the quantum physics of semiconductors and nanostructures.

IV-VI and IV-VI2 semiconductors are among the most interesting materials in semiconductor physics. The electrical properties of these semiconductors can also be tuned by adding impurity atoms. These semiconductors either have already found use or are promising materials for infrared sensors and sources, thermoelectric elements, solar cells, memory elements, etc. The basic characteristics of these compounds, namely, narrow bandgap, high permittivity, relatively high radiation resistance, high mobility of charge carriers, and high bond ionicity, are unique among semiconductor substances. Because of their wide application in various devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. Doping with impurities is a common method of modifying and diversifying the properties of physical and chemical semiconductors. This book covers all known information about phase relations in ternary systems based on IV-VI and IV-VI2 semiconductors, providing the first systematic account of phase equilibria in ternary systems and making research originally published in Russia accessible to the wider scientific community. This book will be of interest to undergraduate and graduate students studying materials science, solid state chemistry, and engineering. It will also be relevant for researchers at industrial and national laboratories, in addition to phase diagram researchers, inorganic chemists, and solid-state physicists.FEATURES Provides up-to-date experimental and theoretical information Allows readers to synthesize semiconducting materials with predetermined properties Delivers a critical evaluation of many industrially important systems presented in the form of two-dimensional sections for the condensed phases

Black phosphorus (BP)-based two-dimensional (2D) nanomaterials are used as components in practical industrial applications in biomedicine, electronics, and photonics. There is a need to controllably shape engineered scalable structures of 2D BP building blocks, and their assembly/organization is desired for the formation of three-dimensional (3D) forms such as macro and hybrid architectures, as it is expected that these architectures will deliver even better materials performance in applications. Semiconducting Black Phosphorus: From 2D Nanomaterial to Emerging 3D Architecture provides an overview of the various synthetic strategies for 2D BP single-layer nanomaterials, their scalable synthesis, properties, and assemblies into 3D architecture. The book covers defect engineering and physical properties of black phosphorous; describes different strategies for the development of 2D nanostructures of BP with other species such as polymers, organic molecules, and other inorganic materials; offers a comparative study of 3D BP structures with other 3D architectures such as dichalcogenides (TMDs, graphene, and boron nitride); and discusses in detail applications of 3D macrostructures of BP in various fields such as energy, biomedical, and catalysis.This is an essential reference for researchers and advanced students in materials science and chemical, optoelectronic, and electrical engineering.

Despite a long tradition of sophisticated, creative materials synthesis among quantum materials researchers, a sense of broader community has been lacking. In initiating the Fundamentals of Quantum Materials Winter School held annually at the University of Maryland, we wanted to bring together the next generation of growers to learn techniques and pointers directly from senior scientists, and it turns out that we were not alone. The enthusiasm from both students and teachers has been both gratifying and invigorating. Four schools later, we can confidently say that physicists, chemists, and materials scientists, experimentalists and theorists alike, all want to know how to make a good sample. With this in mind, we asked our lecturers to record their most important ideas and share their expertise with a broader audience. This resource is a compilation of fundamental and practical guides on the modern methods of materials synthesis utilized by these experts. We hope that you enjoy reading their essential guidance and state-of-the-art techniques as you explore the Fundamentals of Quantum Materials.

This book introduces the wider field of functional nanomaterials sciences, with a strong emphasis on semiconductor photonics. Whether you are studying photonic quantum devices or just interested in semiconductor nanomaterials and their benefits for optoelectronic applications, this book offers you a pedagogical overview of the relevant subjects along with topical reviews. The book discusses different yet complementary studies in the context of ongoing international research efforts, delivering examples from both fundamental and applied research to a broad readership. In addition, a hand-full of useful optical techniques for the characterization of semiconductor quantum structures and materials are addressed. Moreover, nanostructuring methods for the production of low-dimensional systems, which exhibit advantageous properties predominantly due to quantum effects, are summarized. Science and engineering professionals in the interdisciplinary domains of nanotechnology, photonics, materials sciences, and quantum physics can familiarize themselves with selected highlights with eyes towards photonic applications in the fields of two-dimensional materials research, light–matter interactions, and quantum technologies.

Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems. The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas. Key Features Provides comprehensive coverage of wide bandgap semiconductor-based electronicsCovers both materials and devicesIncludes cutting-edge research not covered in other booksVery experienced editors – they have produced 19 other books in related areas

This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga₂O₃). Ga₂O₃ has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga₂O₃ is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community.Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga₂O₃.

Flexibility and stretchability of electronics are crucial for next generation electronic devices that involve skin contact sensing and therapeutic actuation. This handbook provides a complete entrée to the field, from solid-state physics to materials chemistry, processing, devices, performance, and reliability testing, and integrated systems development. This work shows how microelectronics, signal processing, and wireless communications in the same circuitry are impacting electronics, healthcare, and energy applications.Key Features:• Covers the fundamentals to device applications, including solid-state and mechanics, chemistry, materials science, characterization techniques, and fabrication;• Offers a comprehensive base of knowledge for moving forward in this field, from foundational research to technology development;• Focuses on processing, characterization, and circuits and systems integration for device applications;• Addresses the basic physical properties and mechanics, as well as the nuts and bolts of reliability and performance analysis;• Discusses various technology applications, from printed electronics to logic and memory devices, sensors, actuators, displays, and energy storage and harvesting.This handbook will serve as the one-stop knowledge base for readership who are interested in flexible and stretchable electronics.

Defects in Nanocrystals: Structural and Physico-Chemical Aspects discusses the nature of semiconductor systems and the effect of the size and shape on their thermodynamic and optoelectronic properties at the mesoscopic and nanoscopic levels. The nanostructures considered in this book are individual nanometric crystallites, nanocrystalline films, and nanowires of which the thermodynamic, structural, and optical properties are discussed in detail. The work: Outlines the influence of growth processes on their morphology and structure Describes the benefits of optical spectroscopies in the understanding of the role and nature of defects in nanostructured semiconductors Considers the limits of nanothermodynamics Details the critical role of interfaces in nanostructural behavior Covers the importance of embedding media in the physico-chemical properties of nanostructured semiconductors Explains the negligible role of core point defects vs. surface and interface defects Written for researchers, engineers, and those working in the physical and physicochemical sciences, this work comprehensively details the chemical, structural, and optical properties of semiconductor nanostructures for the development of more powerful and efficient devices.

2D Semiconductor Materials and Devices reviews the basic science and state-of-art technology of 2D semiconductor materials and devices. Chapters discuss the basic structure and properties of 2D semiconductor materials, including both elemental (silicene, phosphorene) and compound semiconductors (transition metal dichalcogenide), the current growth and characterization methods of these 2D materials, state-of-the-art devices, and current and potential applications. - Reviews a broad range of emerging 2D electronic materials beyond graphene, including silicene, phosphorene and compound semiconductors - Provides an in-depth review of material properties, growth and characterization aspects—topics that could enable applications - Features contributions from the leading experts in the field

Understanding the formation and introduction mechanisms of defects in semiconductors is essential to understanding their properties. Although many defect-related problems have been identified and solved over the past 60 years of semiconductor research, the quest for faster, cheaper, lower power, and new kinds of electronics generates an ongoing need for new materials and properties, and so creates new defect-related challenges.

This book presents the first established experimental results of an emergent field: 2-dimensional materials as platforms for quantum technologies, specifically through the optics of quantum-confined excitons. It also provides an extensive review of the literature from a number of disciplines that informed the research, and introduces the materials of focus – 2d Transition Metal Dichalcogenides (2d-TMDs) – in detail, discussing electronic and chemical structure, excitonic behaviour and response to strain. This is followed by a brief overview of quantum information technologies, including concepts such as single-photon sources and quantum networks. The methods chapter addresses quantum optics techniques and 2d-material processing, while the results section shows the development of a method to deterministically create quantum dots (QDs) in the 2d-TMDs, which can trap single-excitons; the fabrication of atomically thin quantum light-emitting diodes to induce all-electrical single-photon emission from the QDs, and lastly, the use of devices to controllably trap single-spins in the QDs –the first step towards their use as optically-addressable matter qubits.

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;Enables design of smaller, cheaper and more efficient power supplies.

Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. - Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance - Examines why diamond semiconductors could lead to superior power electronics - Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics

Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and'how to'on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

This book provides technological perspective and comprehensive overview on the research efforts related to II-VI group cadmium based semiconducting nanomaterials. It describes state-of-the-art information on different synthesis methods for preparation of these materials using a variety of experimental strategies. The effects of synthesis roots on structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport characteristics of these nano-structures are systematically analyzed. A wide target readership comprising of students, researchers, scholars, scientists, technicians, academicians, industrialists can benefit from this book, as cadmium based semiconductors possess significant research and industrial interest thanks to their innovative properties.

Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic.This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students.

The rapidly advancing Silicon Carbide technology has demonstrated a great potential in high-power low-loss semiconductor electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for development of high temperature electronics and semiconductor devices operating in harsh environment. Keywords: Silicon Carbide Technology, Semiconductor Devices, SiC Device Fabrication, SiC Device Characterization, SiC Surface Cleaning, SiC Surface Etching, Electrical Characterization of SiC, Ohmic Contacts to SiC, Contact Resistivity Analysis, Ohmic Contact Fabrication, Metallization Schemes, Thermal Stability of Ohmic Contacts to SiC, Schottky Contacts to SiC, Schottky Barrier Formation, Schottky Diodes, Junction Barrier Schottky Diodes, Si/ SiC Heterojunction Diodes, Schottky Barrier Inhomogeneity in SiC, SiC Power Electronics, Temperature/Light Sensors, SiC Switching Devices, High Temperature Electronics, High Frequency Electronics, Thermal Stability of SiC.

This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices'performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

As wide band semiconductors with rich morphologies and interesting electric, optical, mechanical and piezoelectric properties, ZnO nanostructures have great potential in applications, such as strain sensors, UV detectors, blue LED, nano generators, and biosensors. ZnO Nanostructures: Fabrication and Applications covers the controllable synthesis and property optimization of ZnO nanostructures through to the preparation and performance of nanodevices for various applications. The book also includes recent progress in property modulation of ZnO nanomaterials and new types of devices as well as the latest research on self-powered devices and performance modulation of ZnO nanodevices by multi-field coupled effects. Authored by a leading researcher working within the field, this volume is applicable for those working in nanostructure fabrication and device application in industry and academia and is appropriate from advanced undergraduate level upwards.

Electronic devices based on oxide semiconductors are the focus of much attention, with crystalline materials generating huge commercial success. Indium–gallium–zinc oxide (IGZO) transistors have a higher mobility than amorphous silicon transistors, and an extremely low off-state current. C-axis aligned crystalline (CAAC) IGZO enables aggressive down-scaling, high reliability, and process simplification of transistors in displays and LSI devices. This original book introduces the CAAC-IGZO structure, and describes the physics and technology of this new class of oxide materials. It explains the crystallographic classification and characteristics of crystalline oxidesemiconductors, their crystallographic characteristics and physical properties, and how this unique material has made a major contribution to the field of oxide semiconductor thin films. Two further books in this series describe applications of CAAC-IGZO in flat-panel displays and LSI devices. Key features: Introduces the unique and revolutionary, yet relatively unknown crystalline oxide semiconductor CAAC-IGZO Presents crystallographic overviews of IGZO and related compounds. Offers an in-depth understanding of CAAC-IGZO. Explains the fabrication method of CAAC-IGZO thin films. Presents the physical properties and latest data to support high-reliability crystalline IGZO based on hands-on experience. Describes the manufacturing process the CAAC-IGZO transistors and introducesthe device application using CAAC-IGZO.

Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) in these materials and devices, such as high-power and high brightness UV-blue-green-white light emitting diodes (LEDs), UV-blue-green laser diodes (LDs), photo-detectors and various optoelectronics and electronics devices and applications.The Nobel Prize in Physics 2014 was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura'for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources'. Red and green diodes had been invented since 1960s-70s but without blue LED. Despite considerable efforts, the blue LED had remained a challenge for a long time. The success and inventions on GaN-based LEDs were revolutionary and benefiting for mankind. III-Nitrides-based industry has formed and acquired rapid developments over the world. Incandescent light bulbs lit the 20th century and the 21st century will be lit by LED lamps.Before this book, the editor has edited two books, III-Nitride Semiconductor Materials (2006) and III-Nitride Devices and Nanoengineering (2008), both published by ICP/WSP, in the fields of III-Nitride. The developments of these materials and devices are moving rapidly. Many data or knowledge, some even just published only recently, have been modified and needed to be upgraded. This new book, III-Nitride Materials, Devices and Nano-Structures as the third instalment, will cover the rapid new developments and achievements in the III-Nitride fields, particularly those made since 2009.

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99% have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10% of global electricity consumption.The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

LEDs are in the midst of revolutionizing the lighting industry Up-to-date and comprehensive coverage of light-emitting materials and devices used in solid state lighting and displays Presents the fundamental principles underlying luminescence Includes inorganic and organic materials and devices LEDs offer high efficiency, long life and mercury free lighting solutions

III-V semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic devices as light-emitting diodes and solar cells. Because of their wide applications in a variety of devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. This new book covers all known information about phase relations in ternary systems based on III-V semiconductors.This book will be of interest to undergraduate and graduate students studying materials science, solid state chemistry, and engineering. It will also be relevant for researchers at industrial and national laboratories, in addition to phase diagram researchers, inorganic chemists, and solid state physicists.

This informative book focuses on newly developed functional materials and their applications for electronic and spintronic devices. Electronic devices have become a part of our daily modern life, involving mobile phones, data storage, computers, and satellites, and there is relentless growth in microelectronics. This volume covers the topics of oxide materials for electronics devices, new materials, and new properties, especially in newly developed research areas, such as oxide magnetic semiconductors and two-dimensional electron gas. Key features: Emphasizes functional materials for electronic devices, including two-dimensional materials, two-dimensional electron gas, multiferroic materials, memory materials, sensor materials, and spintronic materials. Describes the basics as well as new developments of these functional materials and devices.

This book highlights the display applications of c-axis aligned crystalline indium–gallium–zinc oxide (CAAC-IGZO), a new class of oxide material that challenges the dominance of silicon in the field of thin film semiconductor devices. It is an enabler for displays with high resolution and low power consumption, as well as high-productivity manufacturing. The applications of CAAC-IGZO focus on liquid crystal displays (LCDs) with extremely low power consumption for mobile applications, and high-resolution and flexible organic light-emitting diode (OLED) displays, and present a large number of prototypes developed at the Semiconductor Energy Laboratory. In particular, the description of LCDs includes how CAAC-IGZO enables LCDs with extremely low refresh rate that provides ultra-low power consumption in a wide range of use cases. Moreover, this book also offers the latest data of IGZO. The IGZO has recently achieved a mobility of 65.5 cm2ƒ}V-s, and it is expected to potentially exceed 100 cm2ƒ}V-s as high as that of LTPS. A further two books in the series will describe the fundamentals of CAAC-IGZO, and the application to LSI devices. Key features: • Introduces different oxide semiconductor field-effect transistor designs and their impact on the reliability and performance of LCDs and OLED displays, both in pixel and panel-integrated driving circuits. • Reviews fundamentals and presents device architectures for high-performance and flexible OLED displays, their circuit designs, and oxide semiconductors as an enabling technology. • Explains how oxide semiconductor thin-film transistors drastically can improve resolution and lower power consumption of LCDs.

This book provides a comprehensive summary of the status of emerging sensor technologies and provides a framework for future advances in the field. Chemical sensors have gained in importance in the past decade for applications that include homeland security, medical and environmental monitoring and also food safety. A desirable goal is the ability to simultaneously analyze a wide variety of environmental and biological gases and liquids in the field and to be able to selectively detect a target analyte with high specificity and sensitivity. The goal is to realize real-time, portable and inexpensive chemical and biological sensors and to use these as monitors for handheld gas, environmental pollutant, exhaled breath, saliva, urine, or blood, with wireless capability.In the medical area, frequent screening can catch the early development of diseases, reduce the suffering of patients due to late diagnoses, and lower the medical cost. For example, a 96% survival rate has been predicted in breast cancer patients if the frequency of screening is every three months. This frequency cannot be achieved with current methods of mammography due to high cost to the patient and invasiveness (radiation). In the area of detection of medical biomarkers, many different methods, including enzyme-linked immunsorbent assay (ELISA), particle-based flow cytometric assays, electrochemical measurements based on impedance and capacitance, electrical measurement of microcantilever resonant frequency change, and conductance measurement of semiconductor nanostructures, gas chromatography (GC), ion chromatography, high density peptide arrays, laser scanning quantitiative analysis, chemiluminescence, selected ion flow tube (SIFT), nanomechanical cantilevers, bead-based suspension microarrays, magnetic biosensors and mass spectrometry (MS) have been employed. Depending on the sample condition, these methods may show variable results in terms of sensitivity for some applications and may not meet the requirements for a handheld biosensor.

An Essential Guide to Electronic Material Surfaces and Interfaces is a streamlined yet comprehensive introduction that covers the basic physical properties of electronic materials, the experimental techniques used to measure them, and the theoretical methods used to understand, predict, and design them. Starting with the fundamental electronic properties of semiconductors and electrical measurements of semiconductor interfaces, this text introduces students to the importance of characterizing and controlling macroscopic electrical properties by atomic-scale techniques. The chapters that follow present the full range of surface and interface techniques now being used to characterize electronic, optical, chemical, and structural properties of electronic materials, including semiconductors, insulators, nanostructures, and organics. The essential physics and chemistry underlying each technique is described in sufficient depth for students to master the fundamental principles, with numerous examples to illustrate the strengths and limitations for specific applications. As well as references to the most authoritative sources for broader discussions, the text includes internet links to additional examples, mathematical derivations, tables, and literature references for the advanced student, as well as professionals in these fields. This textbook fills a gap in the existing literature for an entry-level course that provides the physical properties, experimental techniques, and theoretical methods essential for students and professionals to understand and participate in solid-state electronics, physics, and materials science research. An Essential Guide to Electronic Material Surfaces and Interfaces is an introductory-to-intermediate level textbook suitable for students of physics, electrical engineering, materials science, and other disciplines. It is essential reading for any student or professional engaged in surface and interface research, semiconductor processing, or electronic device design.

The book is devoted to nanostructures and nanostructured materials containing both amorphous and crystalline phases with a particular focus on their thermal properties. It is the first time that theoreticians and experimentalists from different domains gathered to treat this subject. It contains two distinct parts; the first combines theory and simulations methods with specific examples, while the second part discusses methods to fabricate nanomaterials with crystalline and amorphous phases and experimental techniques to measure the thermal conductivity of such materials. Physical insights are given in the first part of the book, related with the existing theoretical models and the state of art simulations methods (molecular dynamics, ab-initio simulations, kinetic theory of gases). In the second part, engineering advances in the nanofabrication of crystalline/amorphous heterostructures (heavy ion irradiation, electrochemical etching, aging/recrystallization, ball milling, PVD, laser crystallization and magnetron sputtering) and adequate experimental measurement methods are analyzed (Scanning Thermal Microscopy, Raman, thermal wave methods and x-rays neutrons spectroscopy).

This book presents the latest developments in semiconducting materials and devices, providing up-to-date information on the science, processes, and applications in the field. A wide range of topics are covered, including optoelectronic devices, metal–semiconductor junctions, heterojunctions, MISFETs, LEDs, semiconductor lasers, photodiodes, switching diodes, tunnel diodes, Gunn diodes, solar cells, varactor diodes, IMPATT diodes, and advanced semiconductors. Detailed attention is paid to advanced and futuristic materials. In addition, clear explanations are provided of, for example, electron theories, high-field effects, the Hall effect, transit-time effects, drift and diffusion, breakdown mechanisms, equilibrium and transient conditions, switching, and biasing. The book is designed to meet the needs of undergraduate engineering students and will also be very useful for postgraduate students; it will assist in preparation for examinations at colleges and universities and for other examinations in engineering. Practice questions are therefore presented in both essay and multiple choice format, and many solved examples and unsolved problems are included.

This book has been designed as a result of the author's teaching experiences; students in the courses came from various disciplines and it was very difficult to prescribe a suitable textbook, not because there are no books on these topics, but because they are either too exhaustive or very elementary. This book, therefore, includes only relevant topics in the fundamentals of the physics of semiconductors and of electrochemistry needed for understanding the intricacy of the subject of photovoltaic solar cells and photoelectrochemical (PEC) solar cells. The book provides the basic concepts of semiconductors, p:n junctions, PEC solar cells, electrochemistry of semiconductors, and photochromism. Researchers, engineers and students engaged in researching/teaching PEC cells or knowledge of our sun, its energy, and its distribution to the earth will find essential topics such as the physics of semiconductors, the electrochemistry of semiconductors, p:n junctions, Schottky junctions, the concept of Fermi energy, and photochromism and its industrial applications.'The topics in this book are explained with clear illustration and indispensable terminology. It covers both fundamental and advanced topics in photoelectrochemistry and I believe that the content presented in this monograph will be a resource in the development of both academic and industrial research'.—Professor Akira Fujishima, President, Tokyo University of Science, and Director, Photocatalysis International Research Center, Tokyo University of Science, Japan

This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process. A further two books in the series will describe the fundamentals; and the specific application of CAAC-IGZO to LCD and OLED displays. Key features: • Outlines the physics and characteristics of CAAC-IGZO FETs that contribute to favorable operations of LSI devices. • Explains the application of CAAC-IGZO to LSI devices, highlighting attributes including low off-state current, low power consumption, and excellent charge retention. • Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc., referring to prototype chips fabricated by a hybrid process of CAAC-IGZO and Si FETs.

Due to their unique optical, thermal, catalytic, magnetic and electronic properties, nano-sized semiconductors have a huge potential in a great number of technological applications, ranging from photovoltaics and photocatalysis to biosensors and medicine. In the last couple of decades, the synthesis and characterization of these materials has been of key interest not only to materials scientists but also to researchers working in the field of physics, chemistry, molecular biology and medicine. The main focus of the present book is the characterization of a number of nano-semiconducting materials, using such techniques as powder X-ray diffraction, UV-visible spectrophotometry, Raman spectrometry, scanning electron microscopy, transmission electron microscopy and vibrating sample magnetometry. The materials studied include ZnS, TiO2, NiO, Ga doped ZnO, Mn doped SnO2, Mn doped CeO2 and Mn doped ZrO2. Of special interest has been the analysis of the electron density distribution within the nano samples. The results give deep insights into the atomic structures on which these crystals are based and on the binding characteristics between the atoms and the ways in which these characteristics can be changed. As the decisive properties of these materials depend upon the electron density distributions and their variations due to sample preparation specifics, temperature and the presence of doping elements, these results give important hints on the direction in which further research should be directed.

Semiconductor Nanowires: Part A, Number 93 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. - Contains comments from leading contributors in the field semiconductor nanowires - Provides reviews of the most important recent literature - Presents a broad view, including an examination of semiconductor nanowires - Comprises up to date advancements in the technological development of nanowire devices and systems, and is comprehensive enough to be used as a reference book on nanowires as well as a graduate student text book

The nonlinear behavior of nitrogen and the passivation effect of hydrogen in dilute nitrides open the way to the manufacture of a new class of nanostructured devices with in-plane variation of the optical band gap. This book addresses the modifications of the electronic structure and of the optical and structural properties induced in these technol

This book reviews the current status of semiconductor materials for conversion of sunlight to electricity, and highlights advances in both basic science and manufacturing. Photovoltaic (PV) solar electric technology will be a significant contributor to world energy supplies when reliable, efficient PV power products are manufactured in large volumes at low cost. Expert chapters cover the full range of semiconductor materials for solar-to-electricity conversion, from crystalline silicon and amorphous silicon to cadmium telluride, copper indium gallium sulfide selenides, dye sensitized solar cells, organic solar cells, and environmentally friendly copper zinc tin sulfide selenides. The latest methods for synthesis and characterization of solar cell materials are described, together with techniques for measuring solar cell efficiency. Semiconductor Materials for Solar Photovoltaic Cells presents the current state of the art as well as key details about future strategies to increase the efficiency and reduce costs, with particular focus on how to reduce the gap between laboratory scale efficiency and commercial module efficiency. This book will aid materials scientists and engineers in identifying research priorities to fulfill energy needs, and will also enable researchers to understand novel semiconductor materials that are emerging in the solar market. This integrated approach also gives science and engineering students a sense of the excitement and relevance of materials science in the development of novel semiconductor materials.· Provides a comprehensive introduction to solar PV cell materials · Reviews current and future status of solar cells with respect to cost and efficiency · Covers the full range of solar cell materials, from silicon and thin films to dye sensitized and organic solar cells · Offers an in-depth account of thesemiconductor material strategies and directions for further research · Features detailed tables on the world leaders in efficiency demonstrations · Edited by scientists with experience in both research and industry

This volume reviews the latest trends in organic optoelectronic materials. Each comprehensive chapter allows graduate students and newcomers to the field to grasp the basics, whilst also ensuring that they have the most up-to-date overview of the latest research. Topics include: organic conductors and semiconductors; conducting polymers and conjugated polymer semiconductors, as well as their applications in organic field-effect-transistors; organic light-emitting diodes; and organic photovoltaics and transparent conducting electrodes. The molecular structures, synthesis methods, physicochemical and optoelectronic properties of the organic optoelectronic materials are also introduced and described in detail. The authors also elucidate the structures and working mechanisms of organic optoelectronic devices and outline fundamental scientific problems and future research directions. This volume is invaluable to all those interested in organic optoelectronic materials.