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The infrared lifetime mapping technique is applied to study defect imaging in multicrystalline silicon and two theoretical models are applied to describe the abnormal lifetime increase. The trapping model is found to give better agreement with the experimental data, while a clear correlation is found between trap and dislocation density mappings on multicrystalline silicon wafers.

The band dispersion in channels with an orderly pillar structure with a pressure-driven liquid flow was determined. Several channels with different geometries were etched in a silicon wafer and enclosed by a glass wafer. The microchannels obtained had the same depth, pillar disposition, and overall porosity, but different pillar diameters and channel widths. The broadening of narrow bands of a fluorescent sample solution flowing through the channels was measured using a fluorescence microscope. It was shown that the peak dispersion occurring in the channels can be much lower than in conventional packed columns, as a consequence of the higher degree of order of the solid structure. Reduced plate heights of ~0.2 could be obtained for (nonretained) bands. No correlation was found between the aspect ratio (the ratio of the channel width and the pillar diameter) and band dispersion. The geometrical construction of the sidewall region was shown to play a critical role for channel performance. A good agreement was found with predictions for the optimal sidewall geometry obtained previously with simulation studies.

The numerical simulations of the equilibrium profiles of liquid microstructures for various boundary conditions and geometrical surface patterns are presented. These computed profiles are compared with experimental profiles of glycerol on patterned wafers by using octadecyl -trichlorosilane (OTS).

The mechanisms of self-alignment with an evaporating droplet method are described and stable and unstable modes are examined. The causes for misalignments of chips on wafers and their evolution are examined by using the SURFACE EVOLVER numerical software and precautions are proposed for suitable alignment.

Polycrystalline [Fe.sub.3][O.sub.4] films are deposited on the p-Si wafers by using reactive sputtering to form the polycrystalline [Fe.sub.3][O.sub.4]/p-Si heterostructures. The current-dependent magnetoresistance (MR) has crossed from negative to positive with different manners for the forward and reverse currents, where the MR is caused by the rectifying effect and band structure of the [Fe.sub.3][O.sub.4] near the interface of the heterostructures.

A set of modular components is designed, prepared and combined to produce an innovative method for the self-assembly of large supramolecular structures on silicon wafers. The complete orthogonality of the two interactions has allowed the molecular level control of each step of the solid-state assembly and the response to precise external stimuli.

A new method is used for characterizing adhesion of monolayered/multilayered graphene sheets on silicon wafer. Local adhesion strength is obtained by measuring the particle height and blister radius by using a scanning electron microscope.

The effects of rapid thermal annealing (RTA) on amorphous hydrogenated carbon-coated film on Si wafer, deposited by C[H.sub.4]/Ar dielectric barrier discharge plasma, are examined. The analysis of the surface morphology has showed the effect of RTA on the film changing the morphological property at 600 [degree] C and most of the bubbles evaporating above 200 [degree] C.

The self-assembly technology is applied to deposit the magnetic NiO/[Fe.sub.19][Ni.sub.81] nanostructure bilayer onto the colloidal spheres grown on a Si wafer. The enhanced exchange bias field [H.sub.E] in the nanocap is attribued to the decreased thickness of the ferromagnetic layer induced by the sphere surface.

A low dose carbon implantation and high temperature annealing in CO atmosphere were applied to grow epitaxially high quality 3C-SiC nanocrystallites on (100) Si wafers covered by a 150 nm thick Si[O.sub.2] capping layer. Conventional and high resolution transmission electron microscopy were used to gain insight into formation of the nucleation of silicon-carbon clusters at the Si[O.sub.2]/Si interface as well as the morphology, the size, and the density of the inamoratas.

The fabrication and characterization of conductive nanowires made of gold nanoparticle (AuNP) chains based on [lambda]-DNA molecules immobilized on a surface of (3-aminopropyl)triethoxysilane-coated Si wafer as a template is presented. The AuNP chain based on DNA has displayed an Ohmic behavior at room temperature with the conductivity of two orders of magnitude lower than the bulk value.

The study has helped in understanding the role of hydrogen and ion bombardment during the plasma deposition as well as the effect of an epitaxial layer. The results have shown that hydrogen has played a major role in preparing high efficiency heterojunction solar cells and also the effects of the [H.sub.2] plasma has depended on the resistivity of the c-Si wafer.

Heterojunction diodes are prepared by using p-type [Ge.sub.2][Sb.sub.2][Te.sub.5] and low doped n-type silicon wafer. The properties of a p-n heterojunction diode based on [Ge.sub.2][Sb.sub.2][Te.sub.5] are described for applying in 0T1R cross-point structure array for reliable read operation and for decreasing the sneaking current.

Si[O.sub.2] nanoparticles are generated by scratching the quartz or silicon wafers with a Si[O.sub.2] layer and it is shown to be active for the growth of single walled carbon nanoparticles (SWNTs). The effective catalysts for SWNT growth is shown to be more size-dependent than the catalysts and the long oriented SWNTs generated from these new catalysts have ruled out the relationship between the catalysts and structures of the SWNTs.

TiNi and TiNi based shape-memory thin films are sputter-deposited atom a silicon wafer and have different types of thermally-induced reversible surface morphologies. Irregular surface trenches have appeared in the fully crystallized thin films and in partially crystallized thin films, the crystalline structures have appeared in chrysanthemum-shape at high temperature.

A method is proposed for simultaneously monitoring the thickness of a Si[O.sub.2] thin film and the temperature of a Si substrate. The overlapping interference is compensated by estimating the shift in the peak position of the interference at the Si[O.sub.2]/Si interface from the measurement results of the Si[O.sub.2] thickness.

The homogenized beam of an excimer KrF laser is used for constructing rectangular millimeter-scale holes of vertical walls in the ~1 [mu]m thick silicon-oxynitride (SiON) thin film deposited on Si (111) wafer. Numerical simulations of the Marangoni domain roll structures at the SiON/Si interface based on the simple Swift-Hohenberg equation is used to reproduce all types of the roll organization, including those that display the evolution of dislocations from the Eckhause instability.

The synthesis, morphologic and the structural properties of lead zirconium titanate Pb[Zr.sub.0.53][Ti.sub.0.47][O.sub.3] (PZT) thin films deposited on different substrates such as float glass, indium tin oxide (ITO)-coated float glass, and intrinsic silicon wafer are described. A small absorption resonance in the near infrared (IR) region observed for the optical constant dispersion of PZT deposited on ITO-coated float glasses is explained by interfacial effects between ITO and PZT layers.

Molecular dynamic simulations are performed to analyze the deformation of silicon surface under the impact of large silica cluster. The critical velocity of the extrusion on the silicon surface under impact load that is affected by incidence angle rather than the cluster size could be used as guideline for the configuration of process parameters in ultraprecision machining process of silicon wafers.

The fabrication of test devices on two specially grown GaAs/AlGaAs wafers with 10 nm thick gate dielectrics composed of either [Ga.sub.2][O.sub.3] or a stack of [Ga.sub.2][O.sub.3] and [Gd.sub.0.25][Ga.sub.0.15][O.sub.0.6] is reported. The inclusion of Gd in device applications is found to decrease the quality of the [Ga.sub.2][O.sub.3]/GaAs interface and near interface region by introducing roughness and a large number of defect states.

A comparative simulation is performed to study the relative accuracies of the electronic transport properties of silicon wafers evaluated by conventional frequency-scan modulated free carrier absorption (FS-MFCA) and laterally resolved MFCA (LR-MFCA) via multiparameter fitting. The experimental results showed that the fitted diffusivity and carrier life-time values by LR-MFCA are more accurate when compared to the values obtained by FS-MFCA.

The studies related to the growth and field emission of chemical vapor deposition (CVD) diamond on cleaned silicon wafers (c-Si) and porous Si substrates are reported. The results obtained from the field electron emission studies showed that discontinuous diamond films had lower threshold field than continuous films.

Sn[O.sub.2] quantum dots (QDs) with ultrathin nanowires (NWs) are controllably prepared in a simple solution system. The Sn[O.sub.2] QDs are used as building blocks for preparing two dimensional (2D) porous structures with ordered hexagonal, distorted hexagonal and square patterns on silicon-wafer surfaces and have displayed optical features of 2D photonic crystals and enhanced gas sensitivity.

A detailed study was conducted to understand the formation of porous microstructure immersed in water and other solvents in plasma polymers deposited from n-heptylamine onto silicon wafers. The porous plasma polymer coatings with surface groups are found to be suitable for interfacial chemical immobilization reaction and might be used for various membrane and biotechnology applications.

Nearly spherical polycrystalline Si nanoparticles are fabricated based on laser ablation of silicon wafer immersed in sodium dodecyl sulfate aqueous solution. The aging enhancement at ambient air is attributed to progressive passivation of nonradiative [P.sub.b] centers corresponding to silicon dangling bonds on the particles' surfaces.

A new method is described for preparing Mn-activated phosphor, which has used only chemical etching of Si wafer in HF/[H.sub.2]O solution with the addition of an oxidizing agent KMn[O.sub.4]. The luminescence centers of red emission are attributed to [Mn.sup.4+] ions in the octahedral sites of potassium hexafluorosilicate and the luminescence intensity has become stronger at higher temperatures, without largely changing its spectral feature.

The strain, luminescence and electrical properties of nanocrystalline [Zn.sub.1-x][Mn.sub.x]S deposited on silicon wafers are studied. The presence of many recombinant sites, surface areas and defect types have led to broadband photoluminescence emission lines instead of sharp bands and the electrical resistivity as well as activation energy is decreased with increasing Mn concentration.

The fabrication and characterization of silica nanowires grown on a silicon wafer by metal-induce growth using a thin (20 nm) sputter-deposited palladium layer as a catalyst is described. The results obtained provide insight into the possible application of functionalized NW surfaces to selectively detect absorbed molecules via changes in the luminescence.

Wafer bonding and hydrogen implantation exfoliation was used to fabricated a thin InP template layer on GaAs with intermediate silicon nitride bonding layers. This template layer was used to directly compare subsequent metal organic vapor phase epitaxial growth of InGaAs/ InAlAs quantum-well structures on these wafer-bonded templates to growth on a standard InP substrate.

Chemical elemental analysis, temperature-dependent Hall measurements, deep-level transient spectroscopy, and contactless resistivity mapping were performed on undoped semi-insulating (SI) and lightly nitrogen-doped conducting 6H-SiC crystals grown by physical vapor transport (PVT). Resistivity maps of commercial semi-insulating SiC wafers revealed resisitivity variations across the wafers between one and two orders of magnitude.

An ultrahigh-temperature (UHT) annealing is enabled by high-power arc lamp design as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP.

The influence of different tilt angles when a dose of 5.0*10(super 14) antimony (Sb (super +)) ions cm (super -2) was implanted into silicon wafer is described. The conclusions for electrical activation and substitutional fraction drawn at different angles are detailed.

The synthesis of quasi-one dimensional ZnSe nanowires by chemical vapor deposition on Si substrate at various pressure using diethylzinc and diisopropylselendie is described. The photoluminance (PL) study of nanowires is highlighted.

The use of optical breakdown taking place in ambient gases with different characteristic to study morphological, chemical and photolumenence (PL) properties of layers formed on silicon is described. The Si wafer processing by CO2 laser and the changes that contribute to PL properties is highlighted.