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Effect of tilt angle on antimony in silicon implanted wafers
- Source :
- Journal of Applied Physics. May 15, 2004, Vol. 95 Issue 10, 5471-5474
- Publication Year :
- 2004
-
Abstract
- The influence of different tilt angles when a dose of 5.0*10(super 14) antimony (Sb (super +)) ions cm (super -2) was implanted into silicon wafer is described. The conclusions for electrical activation and substitutional fraction drawn at different angles are detailed.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 95
- Issue :
- 10
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.120958294