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Experimental results are presented on proton induced single-event-upsets (SEU) on a 65 nm silicon-on-insulator (SOI) SRAM. The low energy proton SEU results are very different for the 65 nm SRAM as compared with SRAMs fabricated in previous technology generations. Specifically, no upset threshold is observed as the proton energy is decreased down to 1 MeV; and a sharp rise in the upset cross-section is observed below 1 MeV. The increase below 1 MeV is attributed to upsets caused by direct ionization from the low energy protons. The implications of the low energy proton upsets are discussed for space applications of 65 nm SRAMs; and the implications for radiation assurance testing are also discussed. Index Terms--Proton irradiation, silicon-on-insulator (SOI) technology, single event upset (SEU), SRAM.

The effects of device orientation on heavy ion-induced multiple-bit upset (MBU) in 65 nm SRAMs are examined. The MBU response is shown to depend on the orientation of the device during irradiation. The response depends on the direction of the incident ion to the n- and p-wells of the SRAM. The MBU response is simulated using Monte Carlo methods for a space environment. The probability is calculated for event size. Single-bit upsets in the space environment account for 90% of all events with exponentially decreasing probabilities of larger MBU events. Index Terms--Multiple-bit upset, MBU, MCU, SEU, heavy ion, SRAM, MRED, GEANT4, soft error.

We present a comparison of proton single event ground test results for two generations of MIL-STD-1773 fiber optic data bus interface modules. Single event upset rate prediction techniques for fiber optic data systems are also demonstrated and compared with in-flight space performance.

We present data on recent optocoupler in-flight anomalies and the subsequent ground test irradiation performed. Discussions of the single event mechanisms involved, transient filtering analysis, and design implications are included. Proton-induced transients were observed on higher speed optocouplers with a unique dependence on the incidence particle angle. The results indicate that both direct ionization and nuclear reaction-related mechanisms are responsible for the single events observed.

This paper presents radiation effects characterization performed by the NASA Goddard Space Flight Center (GSFC) on spaceflight candidate 16Mbit DRAMs. This includes heavy ion, proton, and Co60 irradiations on single-chip devices as well as proton irradiation of a stacked DRAM module. Lastly, a discussion of test methodology is undertaken.

This paper presents additional results from the CRUX experiment on the US Air Force APEX satellite. The experiment monitors single event effects on 256 Kbit and 1 Mbit SRAMs. It is shown that trapped protons dominate the single event upset rates, as evidenced by correlation with measured proton flux peaks and with flux contours calculated with the AP8 model. The responses of some part type lots were surprising because of the wide variation exhibited in upset rates from device to device within a part type, and because of a wide disparity in upset rates, depending on logic state. The use of generic ground test data in error rate predictions for a mission may be acceptable, but may also result in answers whose inaccuracies are unknown and could be unacceptably large.

As spacecraft unlock the potential of fiber optics for spaceflight applications, system level bit error rates become of concern to the system designer. We present ground test data and analysis on candidate system components.