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The long search for nontoxic alternatives to lead halide perovskites (LHPs) has shown that some compelling properties of LHPs, such as low effective masses of carriers, can only be attained in their closest Sn(II) and Ge(II) analogues, despite their tendency toward oxidation. Judicious choice of chemistry allowed formamidinium tin iodide (FASnI3) to reach a power conversion efficiency of 14.81% in photovoltaic devices. This progress motivated us to develop a synthesis of colloidal FASnI3 NCs with a concentration of Sn(IV) reduced to an insignificant level and to probe their intrinsic structural and optical properties. Intrinsic FASnI3 NCs exhibit unusually low absorption coefficients of 4 × 103 cm-1 at the first excitonic transition, a 190 meV increase of the band gap as compared to the bulk material, and a lack of excitonic resonances. These features are attributed to a highly disordered lattice, distinct from the bulk FASnI3 as supported by structural characterizations and first-principles calculations., Nano Letters, 23 (5), ISSN:1530-6984, ISSN:1530-6992

Nucleation and early growth of Li metal is critical to the performance of anode-free solid-state batteries. We report the use of amorphous carbon deposited by direct current magnetron sputtering as an intermediate layer between the Cu current collector and the Lipon solid electrolyte. The density, conductivity, and microstructure of the carbon interlayer are varied and their influence on the reversible formation and removal of the Li metal anode is investigated. It is shown that thin films of amorphous carbon act as seed layers, reducing the overpotential for Li plating and increasing the critical current density for Li plating and stripping from 2 up to 8 mA cm

Cu2S is a promising solar energy conversion material owing to its good optical properties, elemental earth abundance, and low cost. However, simple and cheap methods to prepare phase‐pure and photo‐active Cu2S thin films are lacking. This study concerns the development of a cost‐effective and high‐throughput method that consists of dissolving high‐purity commercial Cu2S powder in a thiol‐amine solvent mixture followed by spin coating and low‐temperature annealing to obtain phase‐pure crystalline low chalcocite Cu2S thin films. After coupling with a CdS buffer layer, a TiO2 protective layer and a RuO x hydrogen evolution catalyst, the champion Cu2S photocathode gives a photocurrent density of 2.5 mA cm−2 at −0.3 V vs. reversible hydrogen electrode (VRHE), an onset potential of 0.42 VRHE, and high stability over 12 h in pH 7 buffer solution under AM1.5 G simulated sunlight illumination (100 mW cm−2). This is the first thiol‐amine‐based ink deposition strategy to prepare phase‐pure Cu2S thin films achieving decent photoelectrochemical performance, which will facilitate its future scalable application for solar‐driven hydrogen fuel production., Phase‐pure and photoactive Cu2S thin films are prepared by dissolving Cu2S powder in a thiol‐amine solvent mixture followed by spin‐coating and low‐temperature annealing. The champion photocathode delivers a photocurrent density of 2.5 mA cm−2 at −0.3 V vs. VRHE, an onset potential of 0.42 VRHE, and high stability over 12 h in a pH 7 buffer solution under AM1.5 G simulated sunlight illumination (100 mW cm−2).

Photoelectron spectroscopy is an important tool for the development of new materials. However, especially for nitride semiconductors, the formation of surface oxides, surface band bending as well as the lack of a suitable charge reference often prevent a robust analysis. Here, we perform a comprehensive chemical state analysis of the Zn-V-N phase space using the Auger parameter concept, which is less sensitive to such uncertainties. Phase-pure Zn2VN3, VN, and Zn3N2 samples are analyzed using XPS/HAXPES after transfer in inert-gas atmosphere. In addition, high-throughput chemical state analysis is performed on combinatorial Zn1-xVxN thin film libraries. The evolution of the Zn Auger parameter in Zn1-xVxN is consistent with previous mapping of the structural and functional properties. Strikingly, the study reveals a narrower stability range of wurtzite Zn1-xVxN than our previous high-throughput XRD screening, highlighting the sensitivity of the measurement approach. The procedures applied here are transferable to many other material systems and could be particularly useful for the high-throughput development of materials with low crystallinity where insights from XRD screenings are limited.

Antimony sulfide (Sb2S3) is a promising light-absorbing semiconductor for photovoltaic applications, though it remains vastly unexplored for photoelectrochemical water splitting. Sb2S3 was synthesized by a simple sulfurization of electrodeposited antimony metal at relatively low temperatures (240–300 °C) with elemental sulfur. Using a TiO2 buffer layer and a platinum co-catalyst, photocurrent densities up to ∼9 mA cm–2 were achieved at −0.4 V vs RHE in 1 M H2SO4 under one sun illumination. Using X-ray photoelectron spectroscopy band alignment studies and potential-dependent incident photon-to-current efficiency measurements, a conduction band offset of 0.7 eV was obtained for the Sb2S3/TiO2 junction as well as an unfavorable band bending at the heterointerface, which explains the low photovoltage that was observed (∼0.1 V). Upon inserting an In2S3 buffer layer, which offers a better band alignment, a 0.15 V increase in photovoltage was obtained. The excellent photoelectrochemical water splitting performance and the identification of the origin of the low photovoltage of the Sb2S3 photocathodes in this work pave the way for the further development of this promising earth-abundant light-absorbing semiconductor for solar fuel generation.

Materials with crystal structures containing tetrahedral motifs are preferable for optoelectronic applications because they often have direct band gaps and low electron effective masses. However, crystal structures of manganese chalcogenides typically contain octahedral motifs, such as in rock salt (RS) MnS and MnSe materials. Here, we experimentally show that MnS1−xSex alloys with tetrahedrally bonded wurtzite (WZ) structure can form between MnSe and MnS parent compounds with octahedral RS structures, at S-rich compositions (x < 0.4) and low synthesis temperatures (∼300 °C). The calculated mixing enthalpies of MnS1−xSex alloys in RS and WZ structures cannot explain this experimental observation, so we hypothesize that WZ stabilization may be related to smaller structure density and lower surface energy compared with RS. The resulting WZ MnS1−xSex alloys have 3.0–3.2 eV optical absorption onset and lower electrical conductivity (

The synthesis and characterisation of an immobilised molecular ruthenium catalyst for the selective oxidation of organic substrates in fully aqueous media with high selectivity over the competing oxygen evolution reaction is reported.

Among various types of perovskite based tandem solar cells TSCs , all perovskite TSCs are of particular attractiveness for building and vehicle integrated photovoltaics, or space energy areas as they can be fabricated on flexible and lightweight substrates with a very high power to weight ratio. However, the efficiency of flexible all perovskite tandems is lagging far behind their rigid counterparts primarily due to the challenges in developing efficient wide bandgap WBG perovskite solar cells on the flexible substrates as well as their low open circuit voltage VOC . Here, it is reported that the use of self assembled monolayers as hole selective contact effectively suppresses the interfacial recombination and allows the subsequent uniform growth of a 1.77 eV WBG perovskite with superior optoelectronic quality. In addition, a postdeposition treatment with 2 thiopheneethylammonium chloride is employed to further suppress the bulk and interfacial recombination, boosting the VOC of the WBG top cell to 1.29 V. Based on this, the first proof of concept four terminal all perovskite flexible TSC with a power conversion efficiency of 22.6 is presented. When integrating into two terminal flexible tandems, 23.8 flexible all perovskite TSCs with a superior VOC of 2.1 V is achieved, which is on par with the VOC reported on the 28 all perovskite tandems grown on the rigid substrate

The properties and thermal stability of thin films and nano-multilayers (NMLs) are generally governed by the in-depth stress (strain) gradients rather than the average stress state. The effect of strain gradient variation in Cu/W NMLs on the thermal stability between 400 and 800 °C was investigated. The strain distribution in the NML stacks was varied by combining Cu/W bilayers with different Cu and W thicknesses of either 3 or 10 nm. A recently developed method based on in-plane grazing X-ray diffraction was adopted to extract the strain depth profiles. In addition, the evolution of the average stress in the Cu/W NMLs during growth was monitored by an in-situ wafer curvature technique. The mean residual stresses in Cu and W were found to be independent of the disposition of the different Cu/W bilayer substacks. On the contrary, the strain depth profile of the W nanolayers was found to strongly depend on the disposition of Cu/W bilayer substacks in the Cu/W NML, which resulted in different Cu outflow characteristics upon annealing. Moreover, application of different Cu/W bilayer units within the NML stack also provides an innovative pathway for producing Cu/W nanocomposites with graded thermal and mechanical properties.

The development of efficient, stable, and economic water oxidation catalysts (WOCs) is a forefront topic of sustainable energy research. We newly present a comprehensive three-step approach to systematically investigate challenging relationships among preparative history, properties, and performance in heterogeneous WOCs. To this end, we studied (1) the influence of the preparative method on the material properties and (2) their correlation with the performance as (3) a function of the catalytic test method. Spinel-type Co3O4 was selected as a clear-cut model WOC and synthesized via nine different preparative routes. In search of the key material properties for high catalytic performance, these cobalt oxide samples were characterized with a wide range of analytical methods, including X-ray absorption spectroscopy, X-ray photoelectron spectroscopy, powder X-ray diffraction, Raman spectroscopy, BET surface area analysis, and transmission electron microscopy. Next, the corresponding catalytic water oxidation activities were assessed with the three most widely applied protocols to date, namely, photocatalytic, electrocatalytic, and chemical oxidation. The activity of the Co3O4 samples was found to clearly depend on the applied test method. Increasing surface area and disorder as well as a decrease in oxidation states arising from low synthesis temperatures were identified as key parameters for high chemical oxidation activity. Surprisingly, no obvious property–performance correlations were found for photocatalytic water oxidation. In sharp contrast, all samples showed similar activity in electrochemical water oxidation. The substantial performance differences between the applied protocols demonstrate that control and comprehensive understanding of the preparative history are crucial for establishing reliable structure–performance relationships in WOC design.

TiO2 and WO3 are two of the most important, industrially relevant earth-abundant oxides. Although both materials show complementary functionality and are promising candidates for similar types of applications such as catalysis, sensor technology, and energy conversion, their chemical stability in reactive environments differs remarkably. In this study, anodic barrier oxides are grown on solid-solution WxTi1–x alloy precursors covering a wide compositional range (0 ≤ x ≤ 1) with the goal of creating functional oxides with tailored stability. A strong Ti-cation enrichment in the surface region of the grown WxTi1–xOn layer is observed, which can be controlled by both the anodizing conditions and precursor composition. For Ti concentrations above 50 at. %, a continuous nanometer-thick TiO2 protective coating is achieved on top of a homogeneous WxTi1–xOn film as evidenced by X-ray photoelectron spectroscopy and transmission electron microscopy analyses. A comprehensive electrochemical assessment demonstrates a very stable passivation of the surface in both acidic and alkaline environments. This increase in chemical stability correlates directly with the presence of this protective TiO2 film. The results of this work provide insights into the oxidation behavior of W1–xTix alloys, but more importantly demonstrate how controlled oxidation of self-passivating alloys can lead to oxide alloys with thin, protective surface layers that otherwise would require more sophisticated deposition methods.

Semiconductor-based solar energy conversion devices are often multilayer structures with each layer serving a distinct purpose towards generating an efficient and stable device. In water splitting, the use of atomic layer deposited TiO2 (ALD-TiO2) layers enables the stable operation of materials that would normally photocorrode in the aqueous electrolyte. Interestingly, thick ALD-TiO2 (>50 nm) has been successfully used to protect high performance photoanodes, despite an apparent band mismatch that should preclude charge transfer. The understanding of the charge transfer through the relatively thick TiO2 layer remains controversial and warrants further study. Here, we introduce an operando methodology to study charge carrier processes in the ALD-TiO2 protected photoanode by utilizing photoelectrochemical impedance spectroscopy (PEIS) combined with the dual-working-electrode (DWE) technique to resolve if the charge transport through the TiO2 is a conduction band process or involves a hopping through defect states. Two silicon-based systems were evaluated, one featuring a buried homojunction (np+Si/TiO2/Ni) and the other a purely n-type Si directly interfaced with TiO2 (nSi/TiO2/Ni). The additional series resistance imparted by the TiO2 layer (RTiO2) was extracted from the PEIS measurements. Both the potential and thickness dependence of RTiO2 were analyzed, and the DWE technique enabled the sensing of the potential of the TiO2 layer under operation, indicating a strong band bending with the conduction band even more positive than the oxygen evolution potential. Together, these data suggest a conduction band-based transport mechanism, in spite of the presence of defect states in the bandgap of ALD-TiO2, and a detailed picture of the charge transfer through the multilayer structured photoanodes was obtained.

A key challenge for photoelectrochemical water splitting is that high performance semiconductors are not stable in aqueous electrolytes, necessitating corrosion protection layers such as TiO2. In the best case, the protection layer would also serve as the heterojunction partner, minimizing complexity and thereby cost. However, the bands of most high performance semiconductors are poorly aligned with TiO2, limiting the photovoltage. Here, we describe a method to overcome this limitation through the placement of a tunable dipole layer at the interface of the p- and n-type materials, shifting the relative band positions to enable an increased photovoltage. The introduction of a phosphonic acid (PA, H3PO3) layer increases the photovoltage of TiO2-protected Si, Sb2Se3, and Cu2O photocathodes. The dipole effect scales with PA surface coverage, and gives even larger shifts when multilayers are employed. By varying the thickness from submonolayer to multilayer (up to 2 nm), we are able to tune the photovoltage of p-Si/TiO2 over a range of 400 mV.

Sb2Se3 has emerged as an important photoelectrochemical (PEC) and photovoltaic (PV) material due to its rapid rise in photoconversion efficiencies. However, despite its binary nature, Sb2Se3 has a complex defect chemistry, which reduces the maximum photovoltage that can be obtained. Thus, it is important to understand these defects and to develop passivation strategies in order to further improve this material. In this work, a comprehensive investigation of the charge carrier dynamics of Sb2Se3 and the influence of sulfur treatment on its optoelectronic properties was performed using time resolved microwave conductivity (TRMC), photoluminescence (PL) spectroscopy and low frequency Raman spectroscopy (LFRS). The key finding in this work is that upon sulfur treatment of Sb2Se3, the carrier lifetime is increased by the passivation of deep defects in Sb2Se3 in both the surface region and the bulk, which is evidenced by increased charge carrier lifetime of TRMC decay dynamics, increased radiative recombination efficiency and decreased deep defect level emission (PL), and improved long-range order in the material (LFRS). These findings provide crucial insights into the defect passivation mechanisms in Sb2Se3 paving the way for developing highly efficient PEC and PV devices.

Journal of physics / Condensed matter 33(23), 233001 (1-44) (2021). doi:10.1088/1361-648X/abeacd, Hard x-ray photoelectron spectroscopy (HAXPES) is establishing itself as an essential technique for the characterisation of materials. The number of specialised photoelectron spectroscopy techniques making use of hard x-rays is steadily increasing and ever more complex experimental designs enable truly transformative insights into the chemical, electronic, magnetic, and structural nature of materials. This paper begins with a short historic perspective of HAXPES and spans from developments in the early days of photoelectron spectroscopy to provide an understanding of the origin and initial development of the technique to state-of-the-art instrumentation and experimental capabilities. The main motivation for and focus of this paper is to provide a picture of the technique in 2020, including a detailed overview of available experimental systems worldwide and insights into a range of specific measurement modi and approaches. We also aim to provide a glimpse into the future of the technique including possible developments and opportunities., Published by IOP Publ., Bristol

Computationally guided high-throughput synthesis is used to explore the Zn-V-N phase space, resulting in the synthesis of a novel ternary nitride Zn$_2$VN$_3$. Following a combinatorial PVD screening, we isolate the phase and synthesize polycrystalline Zn$_2$VN$_3$ thin films with wurtzite structure on conventional borosilicate glass substrates. In addition, we demonstrate that cation-disordered, but phase-pure (002)-textured, Zn$_2$VN$_3$ thin films can be grown using epitaxial stabilization on {\alpha}-Al2O3 (0001) substrates at remarkably low growth temperatures well below 200 {\deg}C. The structural properties and phase composition of the Zn$_2$VN$_3$ films are studied in detail using XRD and (S)TEM techniques. The composition as well as chemical state of the constituent elements are studied using RBS/ERDA as well as XPS/HAXPES methods. These analyses reveal a stoichiometric material with no oxygen contamination, besides a thin surface oxide. We find that Zn$_2$VN$_3$ is a weakly-doped p-type semiconductor demonstrating broadband room-temperature photoluminescence spanning the range between 2 eV and 3 eV. In addition, the electronic properties can be tuned over a wide range via isostructural alloying on the cation site, making this a promising material for optoelectronic applications., Comment: The final version of the manuscript was published in Chemistry of Materials, November 2021. The final version of the manuscript as well as the SI documents are available at the publishers website

Sb2Se3 has emerged as an important photoelectrochemical PEC and photovoltaic PV material due to its rapid rise in photoconversion efficiencies. However, Sb2Se3 has a complex defect chemistry, which reduces the maximum photovoltage. Thus, it is important to understand these defects and develop defect passivation strategies in Sb2Se3. A comprehensive investigation of the charge carrier dynamics of Sb2Se3 and the influence of sulfur treatment on its optoelectronic properties is performed using time resolved microwave conductivity TRMC , photoluminescence PL spectroscopy, and low frequency Raman spectroscopy LFR . The key finding in this work is that upon sulfur treatment of Sb2Se3, the carrier lifetime is increased by the passivation of deep defects in Sb2Se3 in both the surface region and the bulk, which is evidenced by increased charge carrier lifetime of TRMC decay dynamics, increased radiative recombination efficiency, decreased deep defect level emission PL , and the emergence of new vibration modes by LFR

Antimony sulfide (Sb2S3) is a promising light absorbing semiconductor for photovoltaic applications, though it remains vastly unexplored for photoelectrochemical water splitting. Sb2S3 was synthesized by a simple sulfurization of electrodeposited antimony metal at relatively low temperatures (240-300°C) with elemental sulfur. Using a TiO2 buffer layer and a platinum co-catalyst, photocurrent densities up to ~ 9 mA cm-2 were achieved at -0.4 V vs. RHE in 1 M H2SO4 under one sun illumination. Using XPS band alignment studies and potential dependent IPCE measurements, a conduction band offset of 0.7 eV was obtained for the Sb2S3/TiO2 junction as well as an unfavorable band bending at the heterointerface, which explains the low photovoltage that was observed (~ 0.1 V). Upon inserting an In2S3 buffer layer, which offers a better band alignment, a 0.15 V increase in photovoltage was obtained. The excellent PEC performance and the identification of the origin of the low photovoltage of the Sb2S3 photocathodes in this work pave the way for the further development of this promising earth abundant light absorbing semiconductor for solar fuels generation.

Metastable inorganic materials with unique properties are important in many practical applications, but their synthesis is often challenging. In physics, epitaxial stabilization, also known as pseudomorphic growth, is used to synthesize metastable polymorphs, but usually only as very thin films and on expensive single-crystal substrates. In chemistry, the templated growth of inorganic solid-state materials on self-assembled monolayers of organic molecules is reported. Bridging these two fields, here, we show that the synthesis of metastable polymorphs is possible up to large film thickness on amorphous substrates covered with thin inorganic seed layers that serve as templates. The stabilization of a 500-nm-thick metastable wurtzite (WZ) $\mathrm{Mn}\mathrm{Te}$ film by a 5-nm-thick $\mathrm{Zn}\mathrm{Te}$ seed layer sputtered on amorphous glass substrates is experimentally demonstrated. Theoretical calculations explain this experimental observation by the small WZ polymorph energy relative to that of the ground-state nickeline (NC) structure of $\mathrm{Mn}\mathrm{Te}$ and a large lattice constant difference of the two. The resulting metastable WZ-$\mathrm{Mn}\mathrm{Te}$ polymorph exhibits a wide band gap of 2.7 eV and a low hole density of ${10}^{12}\phantom{\rule{0.25em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$, which is relevant to optoelectronic applications. These properties are in sharp contrast to those of the narrow-band-gap highly doped NC-$\mathrm{Mn}\mathrm{Te}$ with 1.3 eV band gap and ${10}^{19}\phantom{\rule{0.25em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$ hole density. The difference in hole density is due to the calculated difference in the formation energy of manganese vacancy acceptor defects. Overall, these results suggest that templated growth on amorphous substrates with seed layers can be used to synthesize metastable polymorphs of other materials, without the need for expensive single-crystal substrates.

The identification of an effective copper–iron catalyst for the direct conversion of synthesis gas into higher alcohols is hindered by the low solubility limit of Cu in Fe and the limited understanding of structural and electronic descriptors in such multicomponent systems. Here, commercial carbonaceous carriers are shown to produce an efficient material only if they enable control of the size and location of metal species through confinement in adequately sized channels, with conical carbon nanofibers being more adequate than carbon nanotubes. Application of a sol–gel route was preferred to other deposition methods to avoid excessive Cu aggregation, associated with enhanced CO2 formation. A bulk Cu/Fe ratio of 2 permitted one to balance the different tendencies of Cu and Fe toward agglomeration, i.e., to form numerous Cu particles of moderate size and hinder the dispersion of the Fe phase and in turn the Fischer–Tropsch activity. Promotion by tiny amounts of potassium was instrumental to further increase...

Substrate reuse offers a promising route toward enabling high-efficiency III–V solar cells to become cost-competitive for one-sun terrestrial applications. In this study, Ge films were spalled using an electroplated Ni stressor layer, and the fracture surface was characterized. Initial heteroepitaxial GaAs films grown on spalled Ge substrates by hydride vapor phase epitaxy were found to be single crystal with nearly equivalent growth rates between growth on epi-ready and unpolished spalled Ge substrates. We show the first demonstration of III–V solar cells (GaInAsP, Eg ∼ 1.7 eV) grown on unpolished spalled Ge substrates to assess the viability of substrate reuse. We demonstrate equivalent performance for a solar cell grown on spalled Ge and on a coloaded epi-ready Ge substrate, despite the residual roughness on the spalled Ge substrate and the lack of any substrate surface preparation. This initial demonstration of combining substrate reuse with the ability to grow III–V solar cells using a high growth rate and high throughput deposition process is a promising step toward low-cost III–V photovoltaics.

Alloying of semiconductors with similar crystal structures is often used to fine-tune materials properties for optoelectronic applications. However, examples of semiconductor alloys between compounds with two different crystal structures, where properties are changing dramatically as a function of composition, are much rarer. Even more unusual are such heterostructural alloys where the structure and properties can be changed with only a small amount of substitution (

The development of industrially-viable heterogeneous catalysts for higher alcohol (HA) synthesis via direct syngas conversion is hindered by the limited understanding of structural and electronic descriptors of their performance. Here, K-promoted CoMo(5 wt%)-based catalysts were investigated to shed light onto property–function relations. Evaluation of impregnated oxides and C-based materials identified a higher HA selectivity for the catalyst supported on carbon nanofibres obtained by the simultaneous addition of all metals. Using this carrier, additional solids were synthesised via ball milling as well as a sol–gel method with citric acid, which enhanced the CO conversion. After confirming the positive influence of K and a unitary Co/Mo ratio, the impact of temperature (573–773 K) and pressure (0.1–5 MPa) upon activation through reduction by hydrogen was investigated. A combination of two steps, one at 723 K and ambient pressure, fostering the HA selectivity (22%), and a second, more extended, at 573 K and 5 MPa, boosting the CO conversion (14%), maximised the space time yield of HA, which matches that of the best comparable CoMo system reported in the literature (ca. 0.12 gHA gcat−1 h−1) in spite of the 13-times lower metal loading. Characterisation by X-ray diffraction, temperature-programmed reduction by H2, X-ray photoelectron spectroscopy, operando infrared spectroscopy and electron microscopy uncovered that this originated from the atomic intermixing of Co and Mo in binary oxide phases and their high dispersion, enabling proximity and an effective reduction to low oxidation states of the metal sites (0 and +2 for Mo and 0 for Co) upon activation and reaction.

As high-throughput combinatorial experimental methods become more common, the technical challenge is shifting from producing materials to dealing with increasingly large datasets. One of the most important metrics to determine suitability of semiconductor materials for various applications is the band gap. This paper discusses automated algorithms for determining band gaps from optical absorption spectra. The algorithms are applied to a database of 34,313 optical absorption spectra, and selected results are compared to published theoretical and experimental band gap data from 16 materials sets. The best algorithm determines the band gaps with an accuracy of 0.37 eV for direct- and 0.93 eV for indirect band gaps for >20,000 spectra.

Optically transparent materials with p-type electrical conductivity can facilitate the development of transparent electronics and improve the efficiency of photovoltaic solar cells. Sulfide materials represent an interesting alternative to oxides for these applications due to better hole transport properties. Here, transparent and conductive Ba–Cu–S thin films are prepared by combinatorial cosputtering and characterized for their composition, structure, and optoelectronic properties. The conductivity and transparency of these films are found to be strongly dependent on their chemical composition and the substrate temperature during growth. The conductivity of BaCu2S2 and BaCu4S3 can reach 53 S/cm (at 250 °C) and 74 S/cm (at 200 °C), respectively, which is higher than their solution processed/bulk counterparts. The 90% reflectance corrected transmittance is achieved in the wavelength range 600–1000 nm for BaCu2S2 and 650–1000 nm for BaCu4S3 (at 250 °C). These electrical and optical properties are comparabl...

We report on design of optoelectronic properties in previously unreported metastable tin titanium nitride alloys with spinel crystal structure. Theoretical calculations predict that Ti alloying in metastable Sn3N4 compound should improve hole effective mass by up to 1 order of magnitude, while other optical bandgaps remains in the 1–2 eV range up to x ∼ 0.35 Ti composition. Experimental synthesis of these metastable alloys is predicted to be challenging due to high required nitrogen chemical potential (ΔμN ≥ +1.0 eV) but proven to be possible using combinatorial cosputtering from metal targets in the presence of nitrogen plasma. Characterization experiments confirm that thin films of such (Sn1–xTix)3N4 alloys can be synthesized up to x = 0.45 composition, with suitable optical band gaps (1.5–2.0 eV), moderate electron densities (1017 to 1018 cm–3), and improved photogenerated hole transport (by 5×). Overall, this study shows that it is possible to design the metastable nitride materials with properties su...

We grow and kinetically stabilize the isotropic rocksalt phase of SnSe thin films by alloying SnSe with CaSe. Thin polycrystalline films of the metastable heterostructural alloy Sn1−xCaxSe are synthesized by pulsed laser deposition on amorphous SiO2 over the entire composition range 0 < x < 1. We observe the theoretically-predicted, composition-driven change from a layered, orthorhombic structure to an isotropic, cubic structure near x = 0.18, in reasonable agreement with the theoretical value of x = 0.13 calculated from first principles. The optical band gap is highly non-linear in x and the trend agrees with theory predictions. Compared to the layered end-member SnSe, the isotropic alloy near the orthorhombic-to-rocksalt transition has a p-type electrical resistivity three orders of magnitude lower, and a thermoelectric power factor at least ten times larger. Thus manipulation of the structure of a functional material like SnSe via alloying may provide a new path to enhanced functionality, in this case, improved thermoelectric performance.

The controlled decomposition of metastable alloys is an attractive route to form nanostructured thermoelectric materials with reduced thermal conductivity. The ternary SnTe–MnTe and SnTe–SnSe heterostructural alloys have been demonstrated as promising materials for thermoelectric applications. In this work, the quaternary Sn1−yMnyTe1−xSex phase space serves as a relevant model system to explore how a combination of computational and combinatorial-growth methods can be used to study equilibrium and non-equilibrium solubility limits. Results from first principle calculations indicate low equilibrium solubility for x,y 0.2. These theoretical and experimental results were used to guide the bulk synthesis of metastable alloys. The ability to reproduce the non-equilibrium solubility levels in bulk materials indicates that such theoretical calculations and combinatorial growth can inform bulk synthetic routes. Further, the large difference between equilibrium and non-equilibrium solubility limits in Sn1−yMnyTe1−xSex indicates these metastable alloys are attractive in terms of nano-precipitate formation for potential thermoelectric applications.

The poor stability of high efficiency photoabsorber materials in aqueous media is one factor holding back the realization of photoelectrochemical (PEC) water splitting for large scale, practical solar fuels generation. Here, we demonstrate that highly efficient thin film Sb2Se3 – fabricated by a simple, low temperature selenization of electrodeposited Sb – is intrinsically stable towards photocorrosion in strongly acidic media (1 M H2SO4). Coupling with a photoelectrodeposited MoSx hydrogen evolution catalyst gives high photocurrents (5 mA cm−2 at 0 V vs. RHE) and high stability without protective layers. A low temperature sulfurization of the Sb2Se3–MoSx stack dramatically improved the onset potential, resulting in high photocurrent densities up to ∼16 mA cm−2 at 0 V vs. RHE. The simplicity with which these photocathodes are fabricated, combined with the high photocurrents and stability, make Sb2Se3 a strong candidate for scalable PEC cells.

TiO$_2$ and WO$_3$ are two of the most important earth-abundant electronic materials with applications in countless industries. Recently alloys of WO$_3$ and TiO$_2$ have been investigated leading to improvements of key performance indicators for a variety of applications ranging from photo-electrochemical water splitting to electrochromic smart windows. These positive reports and the complexity of the ternary W-Ti-O phase diagram motivate a comprehensive experimental screening of this phase space. Using combinatorial thermal oxidation of solid solution W$_{1-x}$Ti$_{x}$ precursors combined with bulk and surface analysis mapping we investigate the oxide phase formation and surface passivation of tungsten titanium oxide in the entire compositional range from pure WO$_3$ to TiO$_2$. The system shows a remarkable structural transition from monoclinic over cubic to tetragonal symmetry with increasing Ti concentration. In addition, a strong Ti surface enrichment is observed for precursor Ti-concentrations in excess of 55 at.%, resulting in the formation of a protective rutile-structured TiO$_2$ surface layer. Despite the structural transitions, the optical properties of the oxide alloys remain largely unaltered demonstrating an independent control of multiple functional properties in W$_{1-x}$Ti$_{x}$O$_{n}$. The results from this study provide valuable guidelines for future development of W$_{1-x}$Ti$_{x}$O$_{n}$ for electronic and energy applications, but also novel engineering approaches for surface functionalization and additive manufacturing of Ti-based alloys.

TiO

SnO exhibits electrical properties that render it promising for solar energy conversion applications, but it also has a strongly indirect band gap. Recent theoretical calculations predict that this disadvantage can be mitigated by isovalent alloying with other group II oxides, such as ZnO. Here, we have synthesized new metastable isovalent (Sn,Zn)O alloy thin films by combinatorial reactive co-sputtering and characterized their structural, optical, and electrical properties. The alloying of ZnO into SnO leads to a change of the valence state of the tin from Sn0 via Sn2+ to Sn4+, which can be counteracted by reducing the oxygen partial pressure during the deposition. The optical characterization of the smooth

Contact layers play an important role in thin film solar cells, but new material development and optimization of its thickness is usually a long and tedious process. A high-throughput experimental approach has been used to accelerate the rate of research in photovoltaic (PV) light absorbers and transparent conductive electrodes, however the combinatorial research on contact layers is less common. Here, we report on the chemical bath deposition (CBD) of CdS thin films by combinatorial dip coating technique and apply these contact layers to Cu(In,Ga)Se-2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) light absorbers in PV devices. Combinatorial thickness steps of CdS thin films were achieved by removal of the substrate from the chemical bath, at regular intervals of time, and in equal distance increments. The trends in the photoconversion efficiency and in the spectral response of the PV devices as a function of thickness of CdS contacts were explained with the help of optical and morphological characterization of the CdS thin films. The maximum PV efficiency achieved for the combinatorial dip-coating CBD was similar to that for the PV devices processed using conventional CBD. The results of this study lead to the conclusion that combinatorial dip-coating can be used to accelerate the optimization of PV device performance of CdS and other candidate contact layers for a wide range of emerging absorbers.

Energy band alignments at heterointerfaces play a crucial role in defining the functionality of semiconductor devices, yet the search for material combinations with suitable band alignments remains a challenge for numerous applications. In this work, we demonstrate how changes in deposition conditions can dramatically influence the functional properties of an interface, even within the same material system. The energy band alignment at the heterointerface between Cu2O and ZnO was studied using photoelectron spectroscopy with stepwise deposition of ZnO onto Cu2O and vice versa. A large variation of energy band alignment depending on the deposition conditions of the substrate and the film is observed, with valence band offsets in the range ΔEVB = 1.45-2.7 eV. The variation of band alignment is accompanied by the occurrence or absence of band bending in either material. It can therefore be ascribed to a pinning of the Fermi level in ZnO and Cu2O, which can be traced back to oxygen vacancies in ZnO and to metallic precipitates in Cu2O. The intrinsic valence band offset for the interface, which is not modified by Fermi level pinning, is derived as ΔEVB ≈ 1.5 eV, being favorable for solar cell applications.

High-throughput computational and experimental techniques have been used in the past to accelerate the discovery of new promising solar cell materials. An important part of the development of novel thin film solar cell technologies, that is still considered a bottleneck for both theory and experiment, is the search for alternative interfacial contact (buffer) layers. The research and development of contact materials is difficult due to the inherent complexity that arises from its interactions at the interface with the absorber. A promising alternative to the commonly used CdS buffer layer in thin film solar cells that contain absorbers with lower electron affinity can be found in β-In2S3. However, the synthesis conditions for the sputter deposition of this material are not well-established. Here, In2S3 is investigated as a solar cell contact material utilizing a high-throughput combinatorial screening of the temperature-flux parameter space, followed by a number of spatially resolved characterization techniques. It is demonstrated that, by tuning the sulfur partial pressure, phase pure β-In2S3 could be deposited using a broad range of substrate temperatures between 500 °C and ambient temperature. Combinatorial photovoltaic device libraries with Al/ZnO/In2S3/Cu2ZnSnS4/Mo/SiO2 structure were built at optimal processing conditions to investigate the feasibility of the sputtered In2S3 buffer layers and of an accelerated optimization of the device structure. The performance of the resulting In2S3/Cu2ZnSnS4 photovoltaic devices is on par with CdS/Cu2ZnSnS4 reference solar cells with similar values for short circuit currents and open circuit voltages, despite the overall quite low efficiency of the devices (∼2%). Overall, these results demonstrate how a high-throughput experimental approach can be used to accelerate the development of contact materials and facilitate the optimization of thin film solar cell devices.

In this paper a promising solution for the notorious problem of manufacturing a stable low ohmic back contact of a CdTe thin film superstrate solar cell is presented without using elemental copper. Instead we have used a Cu2O layer inserted between the CdTe absorber and metal contact (Au). In contrast to the barrier free band alignment gained by using the transitivity rules, XPS measurements show a barrier in the valence band of the Cu2O layers directly after deposition, which results in a low performing JV curve. The contact can be improved by a short thermal treatment resulting in efficiencies superior to copper based contacts for standard CdS/CdTe hetero junction solar cells prepared on commercial glass/FTO substrates. By replacing the CdS window layer with a CdS:O buffer layer efficiencies of >15% could be achieved.

The stability, reactivity and functionality of modern nanostructured and nanoarchitectured materials, like nano-multilayers (NMLs) and nanocomposites (NCs), are generally ruled by fast short-circuit diffusion of atoms along internal interfaces, such as phase and grain boundaries (GBs), at relatively low temperatures. Residual stresses can have a significant effect on the kinetics of short-circuit diffusion in these nanomaterials, which has been largely neglected up to date. We present a combined experimental-modelling approach for deriving stress-free activation energies (and related diffusion coefficients) for the grain boundary diffusion of a given element across an inert barrier nanolayer, which can be utilized to perform fundamental investigations and model predictions of GB diffusion kinetics across inert barrier nanolayers in the presence of a varying stress field. The method was applied to investigate the diffusion of Cu along W grain boundaries in Cu/W nano-multilayers in the temperature range from 400 °C to 600 °C. Firstly, the GB diffusion kinetics as function of the temperature and stress state were determined from experiment by combining in situ heating AES analysis and ex situ XRD stress analysis. The experimental data were compared to model predictions from a modified Hwang–Balluffi model, which accounts for a varying stress level within the barrier during the annealing. The extracted stress-free activation energy for grain boundary diffusion of Cu in W (~0.29 eV) is substantially lower than the respective experimental value for a high compressive stress within the W barrier nanolayer. The corresponding stress-free Cu GB diffusion coefficient in W equals D b ∗ = 3.2 ± 0.6 × 10 - 15 e x p - 0.29 ± 0.02 e V / k T c m 2 / s .

A comprehensive understanding of the oxidation of Cu thin films in the low-temperature regime is of fundamental interest and particularly relevant for applications in the fields of micro- and nanoelectronics, sensors, catalysis, and solar cells. The current study reports on the oxidation kinetics of PVD grown Cu thin films (20–150 nm thick) and the oxide phase evolution from Cu2O to CuO upon thermal oxidation in the temperature range of 100–450 °C. XRD investigations in the laboratory and at the synchrotron show that the oxide phase formation critically depends on the oxidation conditions such as temperature and oxygen partial pressure. The real-time synchrotron XRD measurements reveal that the formation of the CuO phase only starts after complete oxidation of the Cu films to Cu2O films. In situ resistance measurements were performed to follow the oxide growth rate of Cu2O on Cu films in the temperature range of 100–300 °C in air and in 10 mbar pO2. It is found that the oxidation kinetics of Cu films to Cu2O films follows the linear rate law, which is attributed to surface reaction controlled oxidation. The oxygen dissociation rate at the gas–solid interface is the rate-limiting process. A dramatic decrease in the linear oxidation rate is observed at low oxygen partial pressures. The fundamental differences between the oxidation rate-limiting processes of Cu as compared to other transition metal films are discussed.

Anchored molecular catalysts provide a good step towards bridging the gap between homogeneous and heterogeneous catalysis. However, applications in an aqueous environment pose a serious challenge to anchoring groups in terms of stability. Ultrathin overlayers embedding these catalysts on the surface using atomic layer deposition (ALD) are an elegant solution to tackle the anchoring group instability. The propensity of ALD precursors to react with water leads to the question whether molecules containing aqua ligands, such as most water oxidation complexes, can be protected without side reactions and deactivation during the deposition process. We synthesized two iridium and two ruthenium-based water oxidation catalysts, which contained an aqua ligand (Ir&ndash, OH2 and Ru&ndash, OH2) or a chloride (Ir&ndash, Cl and Ru&ndash, Cl) that served as a protecting group for the former. Using a ligand exchange reaction on the anchored and partially embedded Ru&ndash, Cl, the optimal overlayer thickness was determined to be 1.6 nm. An electrochemical test of the protected catalysts on meso-ITO showed different behaviors for the Ru and the Ir catalysts. The former showed no onset difference between protected and non-protected versions, but limited stability. Ir&ndash, Cl displayed excellent stability, whilst the unprotected catalyst Ir&ndash, OH2 showed a later initial onset. Self-regeneration of the catalytic activity of Ir&ndash, OH2 under operating conditions was observed. We propose chloride ligands as generally applicable protecting groups for catalysts that are to be stabilized on surfaces using ALD.