94 results on '"Schwarzenbach, W."'
Search Results
2. Reliability of ultra-thin buried oxides for multi-VT FDSOI technology
3. Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (−2 GPa): From fabrication (Ge enrichment process) to in-depth characterizations
4. Engineered SiC materials for power technologies
5. SmartSiC™ for Manufacturing of SiC Power Devices
6. Treatment of organic polymer surfaces by CF(sub 4) plasmas: Etching by fluorine atoms and influence of vacuum ultraviolet radiation
7. Differential Reflective Metrology An innovative variability measurement for advanced FDSOI material
8. 3D Sequential Low Temperature Top Tier Devices using Dopant Activation with Excimer Laser Anneal and Strained Silicon as Performance Boosters
9. High mass positive ions and molecules in capacitively-coupled radio-frequency CF4 plasmas
10. Particle agglomeration study in rf silane plasmas: in situ study by polarization-sensitive laser light scattering
11. Double SOI substrates for Advanced Technologies
12. Recent progress in sequential 3D device stacking: Low temperature reliable top tier junction-less devices on 300mm wafers.
13. 22FD-SOI Variability Improvement Thanks to SmartCut Thickness Control at Atomic Scale
14. Buried metal line compatible with 3D sequential integration for top tier planar devices dynamic Vth tuning and RF shielding applications
15. Low Temperature SmartCutTM enables High Density 3D SoC Applications
16. Advanced FD-SOI and Beyond Low Temperature SmartCut™ Enables High Density 3-D SoC Applications
17. 3-D Sequential Stacked Planar Devices Featuring Low-Temperature Replacement Metal Gate Junctionless Top Devices With Improved Reliability
18. Beyond advanced FDSOI: Low Temp SmartCut for enabling High Density 3D SoC applications
19. 3D sequential stacked planar devices on 300 mm wafers featuring replacement metal gate junction-less top devices processed at 525°C with improved reliability
20. FD-SOI material enabling CMOS technology disruption from 65nm to 12nm and beyond
21. Down to 15nm BOX: SOI extendability for planar fully depleted application beyond 22FD
22. 300 mm SiGe-On-Insulator Substrates with High Ge Content (70%) Fabricated Using the Smart Cut Technology
23. Reliability of ultrathin buried oxides for multi-VT FDSOI technology
24. Systematic evaluation of SOI Buried Oxide reliability for partially depleted and fully depleted applications
25. High Mobility Materials on Insulator for Advanced Technology Nodes
26. Performance and reliability of strained SOI transistors for advanced planar FDSOI technology
27. Investigation of hot carrier reliability of SOI and strained SOI transistors using back bias
28. Elastic relaxation in intrinsically-strained Fins: Simulations, physical and electrical characterization
29. Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs
30. Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes
31. Ultrathin (5nm) SiGe-On-Insulator with high compressive strain (−2GPa): From fabrication (Ge enrichment process) to in-depth characterizations
32. Global visualization of powder trapping in capacitive RF plasmas by two-dimensional laser scattering
33. Smart Cut™ technology provides excellent layer uniformity for fully depleted CMOS
34. Nanometer-scale silicon powders in RF silane plasmas
35. Evaluation of sSOI wafers for 22nm node and beyond
36. Comparison between <100> and <110> oriented channels in highly strained FDSOI pMOSFETs
37. Enhancement of devices performance of hybrid FDSOI/bulk technology by using UTBOX sSOI substrates
38. Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS
39. Strained silicon on insulator substrates for fully depleted application
40. Defect inspection challenges and solutions for ultra-thin SOI
41. Ultra-Thin SOI/BOX Layers and Next Generations Planar Fully Depleted Substrates
42. Ultra-thin SOI for 20nm node and beyond
43. Excellent silicon thickness uniformity on Ultra-Thin SOI for controlling Vt variation of FDSOI
44. A novel low-voltage biasing scheme for double gate FBC achieving 5s retention and 1016 endurance at 85°C
45. Work-function engineering in gate first technology for multi-VT dual-gate FDSOI CMOS on UTBOX
46. Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond
47. FDSOI: From substrate to devices and circuit applications.
48. Treatment of organic polymer surfaces by CF4 plasmas: Etching by fluorine atoms and influence of vacuum ultraviolet radiation
49. Silicon oxide particle formation in RF plasmas investigated by infrared absorption spectroscopy and mass spectrometry
50. Kinetics of F atoms and fluorocarbon radicals studied by threshold ionization mass spectrometry in a microwave CF4 plasma
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.