Search

Your search keyword '"Schottky-barrier diode"' showing total 10 results
Start Over Descriptor "Schottky-barrier diode"
10 results on '"Schottky-barrier diode"'

1. Characteristics of Failed Bypass Diodes for Photovoltaic Module by Artificial and Natural Lightning

Author

Hamada, Toshiyuki, Nakamoto, Kenta, Nanno, Ikuo, Ishikura, Norio, Oke, Shinichiro, Fujii, Masayuki, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Liang, Qilian, Series Editor, Martin, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zhang, Junjie James, Series Editor, and Németh, Bálint, editor

Published
2020
Full Text
View/download PDF

2. Non-linear noise in nanometric Schottky-barrier diodes.

Author

Pérez, S., González, T., Shiktorov, P., Starikov, E., Gruzinskis, V., Reggiani, L., Varani, L., and Vaissière, J. C.

Subjects
*NONLINEAR theories, *NOISE, *SCHOTTKY barrier diodes, *SEMICONDUCTOR diodes, *SEMICONDUCTOR-metal boundaries, *PHYSICS
Abstract

We present a microscopic analysis of current fluctuations in a heavily doped nanometric GaAs Schottky-barrier diode operating in series with a parallel resonant circuit under the action of a high-frequency large-signal voltage. An ensemble Monte Carlo simulation is used for the calculations. Important modifications of the noise spectra are found in the THz region with respect to the unloaded diode. An analytical model based on the static I-V and C-V characteristics of the diode is developed to explain the spectra obtained by Monte Carlo simulations. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2005
Full Text
View/download PDF

3. PARAMETER ESTIMATION OF SCHOTTKY-BARRIER DIODE MODEL BY PARTICLE SWARM OPTIMIZATION.

Author

WANG, KAIER and YE, MEIYING

Subjects
*PARAMETER estimation, *SCHOTTKY barrier diodes, *STOCHASTIC systems, *COMBINATORIAL optimization, *MATHEMATICAL optimization
Abstract

This paper presents particle swarm optimization (PSO) method to solve the parameter estimation problem of the Schottky-barrier diode model. Based on the synthetic and experimental data, we have demonstrated that the proposed method has high parameter estimation accuracy. Besides, the initial guesses for the model parameter values are not required in the PSO method. Also, the performance of the PSO method is compared with that of the genetic algorithm (GA) method. The results indicate that the PSO method outperforms the binary-coded and real-coded GA methods in terms of estimation accuracy and computation efficiency. [ABSTRACT FROM AUTHOR]

Published
2009
Full Text
View/download PDF

4. Parameter determination of Schottky-barrier diode model using differential evolution

Author

Wang, Kaier and Ye, Meiying

Subjects
*SCHOTTKY barrier diodes, *MATHEMATICAL optimization, *ELECTRIC resistance, *MATHEMATICAL models, *GENETIC algorithms, *ELECTRIC currents, *SIMULATED annealing
Abstract

Abstract: In this article, a new method, based on the differential evolution (DE) of determining the Schottky-barrier height, ideality factor and series resistance of Schottky-barrier diode (SBD) model using forward current–voltage (I–V) characteristics, is discussed. For the DE method, initial guesses close to the solutions are not required. It can combat the parameter determination problem of the SBD model based on a very broad range specified for each parameter. The performance of the proposed DE method is compared with other commonly used model parameter determination technologies, including genetic algorithm (GA), simulated annealing algorithm (SA), Nelder–Mead simplex search method (SM) and least squares technique (LS). The comparative result indicates that the DE method can obtain optimum solutions more easily than others. [Copyright &y& Elsevier]

Published
2009
Full Text
View/download PDF

5. Quasi-optical highly sensitive Schottky-barrier detector for a wide-band FIR FEL

Author

Kubarev, Vitaly V., Kazakevitch, Grigori M., Jeong, Young Uk, and Lee, Byung Cheol

Subjects
*FREE electron lasers, *DIODES
Abstract

A wide-band FIR detector based on the Schottky-barrier diode for the use on a far-infrared FEL facility has been developed. The detector consists of a GaAs chip with diodes of sub-micrometer diameters and a traveling-wave antenna in a 90° corner-cube reflector that provided effective transmission of the FIR power to the diode from the input FIR focusing lens. The antenna has been optimized for a wavelength of 337 μm. At this wavelength, the detector has a sensitivity of 200 V/W and a noise equivalent power (NEP) of 0.1 nW/Hz1/2. These measurements were made by a HCN laser. For a radiation wavelength of 119 μm (H2O laser) the sensitivity and NEP values were measured to be 20 V/W and 1.0 nW/Hz1/2, respectively. The results of measurements from the compact wide-band FIR FEL facility by the detector in a wide wavelength range are presented. The potentialities of the detector are investigated. [Copyright &y& Elsevier]

Published
2003
Full Text
View/download PDF

6. Design of Ka-Band Doubler.

Author

Yang, Tao and Huang, Xiu

Abstract

This paper describes a Ka-band frequency doubler with balanced structure consisting of Schottky barrier diodes.Input frequency is 13∼20GHz.Output frequency is 26∼40GHz and conversion loss 11.2±1.8Db.It can extend microwave signal source to Ka-band. [ABSTRACT FROM AUTHOR]

Published
2001
Full Text
View/download PDF

7. Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization

Author

M. Ahmetoglu, Ali Kara, B. Kucur, Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü., Ahmetoğlu, Muhitdin A., Kara, Ali, Kucur, Banu, and AAG-6271-2019

Subjects
Current-voltage measurements, Poly ethylene glycol, Materials science, Surface polymerization, Fabricated structures, Triazole, General Physics and Astronomy, 02 engineering and technology, Carbon nanotube, 01 natural sciences, Polymerization, law.invention, Schottky Diodes, Thermionic Emission, Electrical Properties, Ethylene, chemistry.chemical_compound, Electronic device, law, Current mechanisms, Yarn, 0103 physical sciences, Electrical-properties, Ethylene glycol, Diode, 010302 applied physics, Nanotubes, Physics, Capacitance-voltage characteristics, 1,2,4-Triazole, Ethylene glycol dimethacrylate, 021001 nanoscience & nanotechnology, Physics, multidisciplinary, chemistry, Chemical engineering, Single-walled, Schottky-barrier diode, Polyols, 0210 nano-technology, Dark current
Abstract

Bu çalışma, 14-19 Ekim 2015 tarihlerinde Kemer[Türkiye]’düzenlenen 2. International Conference on Computational and Experimental Science and Engineering (ICCESEN) Kongresi‘nde bildiri olarak sunulmuştur. Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/carbon nanotube, single-walled)/n-GaAs ([P(EGDMA-VTAZ)-CNSW]/n-GaAs) diode was fabricated by using surface polymerization method. Electrical properties were carried out at several temperatures. Dark current mechanisms were investigated by using current-voltage (I-V) measurements. It was shown that the fabricated structure exhibited rectification behaviour that makes it a good candidate for electronic device applications.

Published
2016

8. Electrical and photoelectrical characterization of a TTF/p-InP organic–inorganic heterojunction

Author

Yusuf Selim Ocak, Murat Aydemir, T. Kılıçoğlu, Ahmet Tombak, 0-Belirlenecek, TR1393, TR103523, and TR105209

Subjects
Organic-inorganic heterojunction, Materials science, Semiconductor contact, law.invention, N-Sı, Series resistance, Fabrication, chemistry.chemical_compound, Thin-flim transistors, law, Solar cell, Photovoltaic properties, Electrical and Electronic Engineering, Thin film, Barrier height, business.industry, Schottky diode, Heterojunction, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Organic semiconductor, Electronic-Propertis, Semiconductor, chemistry, Solar-cell, Tetrathiafulvalene, Schottky-barrier diode, Voltage characteristic, Optoelectronics, Solar simulator, business
Abstract

Display Omitted Tetrathiafulvalene thin film was formed on p-InP.Current-voltage and capacitance-voltage properties of Al/TTF/p-InP/Au-Zn were investigated.Photoelectrical parameters of the device were determined. Tetrathiafulvalene (TTF) with C6H4S4 molecular formula was used in the fabrication of organic-inorganic (OI) heterojunction. The Al/TTF/p-InP/Au-Zn structure was fabricated by forming a thin TTF organic semiconductor on p-InP inorganic semiconductor and evaporating of Al metal on the film. The characteristic parameters of the device were determined by using current-voltage (I-V) and capacitance-voltage (C-V) measurements. Interface state density distribution was calculated from the I-V characteristics. The I-V characteristics of the device were also examined at 100mW/cm2 illumination intensity by the help of a solar simulator with AM1.5 global filter.

Published
2014

10. High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs

Author

Jun Ma, Elison Matioli, Georgios Kampitsis, Luca Nela, Halil Kerim Yildirim, and Remco van Erp

Subjects
010302 applied physics, Materials science, business.industry, Capacitive sensing, 020208 electrical & electronic engineering, tri-anode, schottky-barrier diode, Charge (physics), power ics, 02 engineering and technology, SBDS, 7. Clean energy, 01 natural sciences, Anode, Reduction (complexity), Planar, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, diode bridge rectifier, Optoelectronics, reverse recovery, business, Ultrashort pulse, Diode, gan diode
Abstract

In this work, we report on the switching performance of AlGaN/GaN lateral Tri-Anode SBDs. The Tri-Anode architecture leads to a more than 50% reduction in the device charge with respect to conventional planar structure, confirmed both by capacitive and reverse-recovery measurements, which results in a much improved $R_{{\mathrm {oN}}}\cdot Q_{\mathrm{rr}}$ figure-of-merit. The Tri-Anode excellent switching performance, combined with the superior DC behavior, makes these devices very promising for future ultra-fast and high-power applications. The diode performance was demonstrated by realizing a monolithically-integrated Diode Bridge Rectifier able to operate at high frequency and achieve AC to DC conversion. These results reveal the outstanding potential of GaN Tri-Anode SBD for ultrafast, large power-density and high-efficiency future power integrated circuits.

Catalog

Books, media, physical & digital resources
See catalog results