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Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization
- Source :
- Acta Physica Polonica A. 130:206-208
- Publication Year :
- 2016
- Publisher :
- Institute of Physics, Polish Academy of Sciences, 2016.
-
Abstract
- Bu çalışma, 14-19 Ekim 2015 tarihlerinde Kemer[Türkiye]’düzenlenen 2. International Conference on Computational and Experimental Science and Engineering (ICCESEN) Kongresi‘nde bildiri olarak sunulmuştur. Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/carbon nanotube, single-walled)/n-GaAs ([P(EGDMA-VTAZ)-CNSW]/n-GaAs) diode was fabricated by using surface polymerization method. Electrical properties were carried out at several temperatures. Dark current mechanisms were investigated by using current-voltage (I-V) measurements. It was shown that the fabricated structure exhibited rectification behaviour that makes it a good candidate for electronic device applications.
- Subjects :
- Current-voltage measurements
Poly ethylene glycol
Materials science
Surface polymerization
Fabricated structures
Triazole
General Physics and Astronomy
02 engineering and technology
Carbon nanotube
01 natural sciences
Polymerization
law.invention
Schottky Diodes
Thermionic Emission
Electrical Properties
Ethylene
chemistry.chemical_compound
Electronic device
law
Current mechanisms
Yarn
0103 physical sciences
Electrical-properties
Ethylene glycol
Diode
010302 applied physics
Nanotubes
Physics
Capacitance-voltage characteristics
1,2,4-Triazole
Ethylene glycol dimethacrylate
021001 nanoscience & nanotechnology
Physics, multidisciplinary
chemistry
Chemical engineering
Single-walled
Schottky-barrier diode
Polyols
0210 nano-technology
Dark current
Subjects
Details
- ISSN :
- 1898794X and 05874246
- Volume :
- 130
- Database :
- OpenAIRE
- Journal :
- Acta Physica Polonica A
- Accession number :
- edsair.doi.dedup.....d09bfb54474ca268f49f0aecba6e5c51