488 results on '"Satoshi Kamiyama"'
Search Results
2. Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer
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Takafumi Hayashi, Yuta Kawase, Noriaki Nagata, Takashi Senga, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
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Medicine ,Science - Abstract
Abstract This study investigated electron beam laser excitation in the UV region using a GaN/AlGaN multiquantum well (MQW) active layer. Laser emission was observed when the GaN/AlGaN MQW was excited by an electron beam, with a wavelength of approximately 353 nm and a threshold power density of 230 kW/cm2. A comparison of optical pumping and electron beam pumping demonstrated that the rate of generation of electron-hole pairs when using electron beam excitation was approximately one quarter that of light excitation.
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- 2017
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3. Voltage-Controlled Anodic Oxidation of Porous Fluorescent SiC for Effective Surface Passivation
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Kosuke Yanai, Weifang Lu, Yoma Yamane, Dong-Pyo Han, Haiyan Ou, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
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fluorescent SiC ,anodic oxidation ,porous structures ,photoluminescence ,surface passivation ,Chemistry ,QD1-999 - Abstract
This study investigated the fabrication of porous fluorescent SiC using a constant voltage-controlled anodic oxidation process. The application of a high, constant voltage resulted in a spatial distinction between the porous structures formed inside the fluorescent SiC substrates, due to the different etching rates at the terrace and the large step bunches. Large, dendritic porous structures were formed as the etching process continued and the porous layer thickened. Under the conditions of low hydrofluoric acid (HF) concentration, the uniformity of the dendritic porous structures through the entire porous layer was considerably improved compared with the conditions of high HF concentration. The resulting large uniform structure offered a sizable surface area, and promoted the penetration of atomic layer-deposited (ALD) Al2O3 films (ALD–Al2O3). The emission intensity in the porous fluorescent SiC was confirmed via photoluminescence (PL) measurements to be significantly improved by a factor of 128 after ALD passivation. With surface passivation, there was a clear blueshift in the emission wavelength, owing to the effective suppression of the non-radiative recombination rate in the porous structures. Furthermore, the spatial uniformity of emitted light was examined via PL mapping using three different excitation lasers, which resulted in the observation of uniform and distinctive emissions in the fluorescent SiC bulk and porous areas.
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- 2020
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4. Development of Monolithically Grown Coaxial GaInN/GaN Multiple Quantum Shell Nanowires by MOCVD
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Kazuma Ito, Weifang Lu, Naoki Sone, Yoshiya Miyamoto, Renji Okuda, Motoaki Iwaya, Tetsuya Tekeuchi, Satoshi Kamiyama, and Isamu Akasaki
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monolithic growth ,multi-color emission ,coaxial MQS nanowires ,In incorporation ,Chemistry ,QD1-999 - Abstract
Broadened emission was demonstrated in coaxial GaInN/GaN multiple quantum shell (MQS) nanowires that were monolithically grown by metalorganic chemical vapor deposition. The non-polar GaInN/GaN structures were coaxially grown on n-core nanowires with combinations of three different diameters and pitches. To broaden the emission band in these three nanowire patterns, we varied the triethylgallium (TEG) flow rate and the growth temperature of the quantum barriers and wells, and investigated their effects on the In incorporation rate during MQS growth. At higher TEG flow rates, the growth rate of MQS and the In incorporation rate were promoted, resulting in slightly higher cathodoluminescence (CL) intensity. An enhancement up to 2–3 times of CL intensity was observed by escalating the growth temperature of the quantum barriers to 800 °C. Furthermore, decreasing the growth temperature of the quantum wells redshifted the peak wavelength without reducing the MQS quality. Under the modified growth sequence, monolithically grown nanowires with a broaden emission was achieved. Moreover, it verified that reducing the filling factor (pitch) can further promote the In incorporation probability on the nanowires. Compared with the conventional film-based quantum well LEDs, the demonstrated monolithic coaxial GaInN/GaN nanowires are promising candidates for phosphor-free white and micro light-emitting diodes (LEDs).
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- 2020
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5. Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer
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Seiji Ishimoto, Dong-Pyo Han, Kengo Yamamoto, Ryoya Mano, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki
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light-emitting diode ,green gap ,efficiency droop ,piezoelectric field ,tunneling leakage ,internal quantum efficiency ,Technology ,Engineering (General). Civil engineering (General) ,TA1-2040 ,Biology (General) ,QH301-705.5 ,Physics ,QC1-999 ,Chemistry ,QD1-999 - Abstract
In this study, we compared the device performance of GaInN-based green LEDs grown on c-plane sapphire substrates with a conventional low temperature GaN buffer layer to those with a sputtered-AlN buffer layer. The light output power and leakage current characteristics were significantly improved by just replacing the buffer layer with a sputtered-AlN layer. To understand the origin of the improvement in performance, the electrical and optical properties were compared by means of electro-reflectance spectroscopy, I⁻V curves, electroluminescence spectra, L⁻I curves, and internal quantum efficiencies. From the analysis of the results, we concluded that the improvement is mainly due to the mitigation of strain and reduction of the piezoelectric field in the multiple quantum wells active region.
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- 2019
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6. Tuning the Resonant Frequency of a Surface Plasmon by Double-Metallic Ag/Au Nanoparticles for High-Efficiency Green Light-Emitting Diodes
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Ryoya Mano, Dong-Pyo Han, Kengo Yamamoto, Seiji Ishimoto, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki
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light-emitting diode ,surface plasmon ,resonant frequency ,internal quantum efficiency ,nanoparticle ,Technology ,Engineering (General). Civil engineering (General) ,TA1-2040 ,Biology (General) ,QH301-705.5 ,Physics ,QC1-999 ,Chemistry ,QD1-999 - Abstract
Currently, the internal quantum efficiency (IQE) of GaInN-based green light-emitting diodes (LEDs) is still low. To overcome this problem, surface plasmon (SP)-enhanced LEDs have been intensively studied for the last 15 years. For an SP effect in green LEDs, Au and Ag are typically employed as the plasmonic materials. However, the resonance wavelength is determined by their material constants, which are theoretically fixed at ~537 nm for Au and ~437 nm for Ag. In this study, we aimed to tune the SP resonant wavelength using double-metallic nanoparticles (NPs) composed of Au and Ag to match the SP resonance wavelength to the LED emission wavelength to consequently improve the IQE of green LEDs. To form double-metallic NPs, Au/Ag multilayers were deposited on a GaN layer and then thermally annealed. We changed the thicknesses of the multilayers to control the Ag/Au ratio in the NPs. We show that the SP resonant wavelength could be tuned using our approach. We also demonstrate that the enhancement of the IQE in SP-enhanced LEDs was strongly dependent on the SP resonant wavelength. Finally, the highest IQE was achieved by matching the SP resonant wavelength to the LED emission wavelength.
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- 2019
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7. Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles
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Daisuke Iida, Ahmed Fadil, Yuntian Chen, Yiyu Ou, Oleksii Kopylov, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Haiyan Ou
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Physics ,QC1-999 - Abstract
We report internal quantum efficiency enhancement of thin p-GaN green quantum-well structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density on the enhancement factor is investigated. We obtain an internal quantum efficiency enhancement by a factor of 2.3 at 756 W/cm2, and a factor of 8.1 at 1 W/cm2. A Purcell enhancement up to a factor of 26 is estimated by fitting the experimental results to a theoretical model for the efficiency enhancement factor.
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- 2015
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8. Investigation of emission plane control in GaInN/ GaN multiple-quantum shells for efficient nanowire-based LEDs.
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Soma Inaba, Weifang Lu, Ayaka Shima, Shiori Ii, Mizuki Takahashi, Yuki Yamanaka, Yuta Hattori, Kosei Kubota, Kai Huang, Motoaki Iwaya, Tetsuya Takeuchi, and Satoshi Kamiyama
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- 2024
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9. Superlattice-Induced Variations in Morphological and Emission Properties of GaInN/GaN Multiquantum Nanowire-Based Micro-LEDs
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Soma Inaba, Weifang Lu, Kazuma Ito, Sae Katsuro, Nanami Nakayama, Ayaka Shima, Yukimi Jinno, Shiori Yamamura, Naoki Sone, Kai Huang, Motoaki Iwaya, Tetsuya Takeuchi, and Satoshi Kamiyama
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General Materials Science - Abstract
Core-shell GaInN/GaN multiquantum shell (MQS) nanowires (NWs) are gaining great attention for high-efficiency micro-light-emitting diodes (micro-LEDs) owing to the minimized etching region on their sidewall, nonpolar or semipolar emission planes, and ultralow density of dislocations. In this study, we evaluated the changes in NW morphologies and the corresponding device properties induced by GaInN/GaN superlattice (SL) structures. The cathodoluminescence intensities of the samples with 20 and 40 pairs of SLs were about 2.2 and 3.4 times higher, respectively, than that of the sample without SLs. The high-resolution scanning transmission electron microscopy (STEM) inspection confirmed that the high growth temperature of SLs prevented growth in the semipolar plane region close to the n-GaN core. A similar phenomenon was also observed for the GaN quantum barriers of the semipolar MQS region under a high growth temperature of 810 °C. This phenomenon was ascribed to the passivation of the semipolar plane surface by hydrogen atoms and the high probability of decomposition through NH
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- 2022
10. Suppression of (0001) plane emission in GaInN/GaN multi-quantum nanowires for efficient micro-LEDs
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Sae Katsuro, Weifang Lu, Kazuma Ito, Nanami Nakayama, Shiori Yamamura, Yukimi Jinno, Soma Inaba, Ayaka Shima, Naoki Sone, Dong-Pyo Han, Kai Huang, Motoaki Iwaya, Tetsuya Takeuchi, and Satoshi Kamiyama
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Electrical and Electronic Engineering ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Biotechnology - Abstract
GaInN/GaN multi-quantum-shell (MQS) nanowires (NWs) are gaining increasing attention as promising materials for developing highly efficient long-wavelength micro-light emitting diodes (LEDs). To improve the emission properties in GaInN/GaN MQS NWs, it is necessary to suppress the emission from the (0001) c-plane MQS at the apex region, which featured with low crystalline quality. In this study, we investigated the enhancement of optical properties and the realization of micro-LEDs by confirming the effect of the (0001) plane region. A 7.9-fold enhancement of the electroluminescence (EL) intensity was demonstrated by removal the (0001) plane region via inductively coupled plasma (ICP) dry etching, owing to the promoted current injection into the (1–101) semi-polar and (10–10) non-polar sidewall area. To investigate the effect of the emission area on the samples with and without truncated (0001) plane region, devices with three different mesa areas (50 × 50, 100 × 100, and 100 × 200 μm2) were fabricated. An increased EL intensity with the reduced mesa areas was observed in the samples without dry etching of the (0001)-plane area, because more current can be injected into the sidewall region with higher crystalline quality and luminous efficiency than the (0001)-plane MQS. Under the same injection current density, the truncated samples’ light output was increased for more than ten times as compared to the samples without (0001)-plane etching. Therefore, it confirms the possibility of realizing highly efficient GaInN/GaN MQS NWs LEDs by eliminating the (0001) plane MQS region. A precise etching and surface passivation of the apex region is expected to further reduce the reverse leakage current and improve the performance in NW-LEDs.
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- 2022
11. Performance of Ultraviolet‐B Laser Diodes on AlGaN Templates Prepared Using Different Fabrication Methods
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Eri Matsubara, Tomoya Omori, Ryota Hasegawa, Kazuki Yamada, Ayumu Yabutani, Ryosuke Kondo, Toma Nishibayashi, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, and Motoaki Iwaya
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Materials Chemistry ,Surfaces and Interfaces ,Electrical and Electronic Engineering ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials - Published
- 2023
12. Development of high‐reflectivity and antireflection dielectric multilayer mirrors for AlGaN‐based ultraviolet‐B laser diodes and their device applications
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Ayumu Yabutani, Ryota Hasegawa, Ryosuke Kondo, Eri Matsubara, Daichi Imai, Sho Iwayama, Yoshito Jin, Tatsuya Matsumoto, Masamitsu Toramaru, Hironori Torii, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, and Motoaki Iwaya
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Materials Chemistry ,Surfaces and Interfaces ,Electrical and Electronic Engineering ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials - Published
- 2023
13. Pre-trimethylindium Flow Treatment of GaInN/GaN Quantum Wells to Suppress Surface Defect Incorporation and Improve Efficiency
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Dong-Pyo Han, Motoaki Iwaya, Tetsuya Takeuchi, and Satoshi Kamiyama
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General Materials Science - Abstract
This study aims to improve the emission efficiency of GaInN-based green light-emitting devices (LEDs) using the pre-trimethylindium (TMIn) flow treatment of a quantum well (QW) since we hypothesize that the pre-TMIn flow treatment is able to suppress the incorporation of surface defects (SDs) from the n-type GaN surface into the QWs. For this purpose, first, we investigate the effect of TMIn flow treatment on the SDs in n-type GaN samples by measuring time-resolved photoluminescence. The result of the investigation shows that the TMIn flow treatment effectively deactivated and/or neutralized the SDs from acting as the nonradiative recombination centers. Next, we prepare and investigate the GaInN-based green LEDs employing five pairs of multiple quantum wells (MQWs), in which the number of pre-TMIn treated QWs varies from zero to five. Through the analysis of prepared samples, we demonstrate that the pre-TMIn flow treatment of QWs works effectively in suppressing the SD incorporation into the MQWs, thereby improving the emission intensity.
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- 2022
14. Development of AlGaN-based laser diodes in the UV-A to UV-B regions
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Motoaki Iwaya, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, and Hideto Miyake
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- 2023
15. Fabrication of vertical UV light-emitting devices by separation of sapphire substrates (Conference Presentation)
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Motoaki Iwaya, Toma Nishibayashi, Moe Shimokawa, Ryota Hasegawa, Eri Matsubara, Ryoya Yamada, Yoshinori Imoto, Ryosuke Kondo, Ayumu Yabutani, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Kohei Miyoshi, Koichi Naniwae, and Akihiko Yamaguchi
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- 2023
16. Establishment of process to suppress (0001)-plane emission by introducing EBL in GaInN/GaN multi-quantum shells/nanowires for efficient 480 nm-LEDs
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Sae Katsuro, Weifang Lu, Nanami Nakayama, Soma Inaba, Yukimi Jinno, Shiori Yamamura, Ayaka Shima, Shiori Ii, Mizuki Takahashi, Yuki Yamanaka, Motoaki Iwaya, Tetsuya Takeuchi, and Satoshi Kamiyama
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- 2023
17. Morphology Control and Crystalline Quality of p-Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires
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Isamu Akasaki, Motoaki Iwaya, Koji Okuno, Naoki Sone, Kazuma Ito, Tetsuya Takeuchi, Weifang Lu, Satoshi Kamiyama, Yoshiya Miyamoto, Sae Katsuro, and Nanami Nakayama
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Materials science ,business.industry ,Doping ,Nanowire ,Shell (structure) ,Chemical vapor deposition ,chemistry.chemical_compound ,chemistry ,Scanning transmission electron microscopy ,Optoelectronics ,Partial dislocations ,General Materials Science ,Coaxial ,Trimethylgallium ,business - Abstract
The morphology and crystalline quality of p-GaN shells on coaxial GaInN/GaN multiple quantum shell (MQS) nanowires (NWs) were investigated using metal-organic chemical vapor deposition. By varying the trimethylgallium (TMG) flow rate, Mg doping, and growth temperature, it was verified that the TMG supply and growth temperature were the dominant parameters in the control of the p-GaN shape on NWs. Specifically, a sufficiently high TMG supply enabled the formation of a pyramid-shaped NW structure with a uniform p-GaN shell. The ratio of the growth rate between the c- and m-planes on the NWs was calculated to be approximately 0.4545. High-angle annular dark-field scanning transmission electron microscopy characterization confirmed that no clear extended defects were present in the n-GaN core and MQS/p-GaN shells on the sidewall. Regarding the p-GaN shell above the c-plane MQS region, only a few screw dislocations and Frank-type partial dislocations appeared at the interface between the serpentine c-plane MQS and the p-GaN shell near the tips. This suggested that the crystalline quality of the MQS structure can trigger the formation of screw dislocations and Frank-type partial dislocations during the p-GaN growth. The growth mechanism of the p-GaN shell on NWs was also discussed. To inspect the electronic properties, a prototype of a micro light-emitting diode (LED) with a chip size of 50 × 50 μm2 was demonstrated in the NWs with optimal growth. By correlating the light output curve with the electroluminescence spectra, three different emission peaks (450, 470, and 510 nm) were assignable to the emission from the m-, r-, and c-planes, respectively.
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- 2021
18. Interference effect in deep-ultraviolet light emitting diodes with p-AlGaN contact layers and ITO/Al electrodes
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Rie Iwatsuki, Hisanori Ishiguro, Maho Fujita, Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Kengo Nagata, Koji Okuno, and Yoshiki Saito
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- 2022
19. Emission characteristics of GaInN/GaN multiple quantum shell nanowire-based LEDs with different p-GaN growth conditions
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Weifang Lu, Nanami Nakayama, Koji Okuno, Isamu Akasaki, Sae Katsuro, Satoshi Kamiyama, Naoki Sone, Motoaki Iwaya, Tetsuya Takeuchi, and Kazuma Ito
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Materials science ,current injection ,business.industry ,Physics ,QC1-999 ,Multiple quantum ,Shell (structure) ,Nanowire ,p-gan shell ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,law.invention ,nanowires ,gainn/gan multiple-quantum-shells ,law ,Optoelectronics ,teg flow rate ,Electrical and Electronic Engineering ,business ,nw-leds ,Biotechnology ,Light-emitting diode - Abstract
Improving current injection into r- and m-planes of nanowires (NWs) is essential to realizing efficient GaInN/GaN multiple quantum shell (MQS) NW-based light-emitting diodes (LEDs). Here, we present the effects of different p-GaN shell growth conditions on the emission characteristics of MQS NW-LEDs. Firstly, a comparison between cathodoluminescence (CL) and electroluminescence (EL) spectra indicates that the emission in NW-LEDs originates from the top region of the NWs. By growing thick p-GaN shells, the variable emission peak at around 600 nm and degradation of the light output of the NW-LEDs are elaborated, which is attributable to the localization of current in the c-plane region with various In-rich clusters and deep-level defects. Utilizing a high growth rate of p-GaN shell, an increased r-plane and a reduced c-plane region promote the deposition of indium tin oxide layer over the entire NW. Therefore, the current is effectively injected into both the r- and m-planes of the NW structures. Consequently, the light output and EL peak intensity of the NW-LEDs are enhanced by factors of 4.3 and 13.8, respectively, under an injection current of 100 mA. Furthermore, scanning transmission electron microscope images demonstrate the suppression of dislocations, triangular defects, and stacking faults at the apex of the p-GaN shell with a high growth rate. Therefore, localization of current injection in nonradiative recombination centers near the c-plane was also inhibited. Our results emphasize the possibility of realizing high efficacy in NW-LEDs via optimal p-GaN shell growth conditions, which is quite promising for application in the long-wavelength region.
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- 2021
20. Correlation between Optical and Structural Characteristics in Coaxial GaInN/GaN Multiple Quantum Shell Nanowires with AlGaN Spacers
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Weifang Lu, Tetsuya Tekeuchi, Naoki Sone, Motoaki Iwaya, Kazuma Ito, Satoshi Kamiyama, Yoshiya Miyamoto, Isamu Akasaki, and Renji Okuda
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010302 applied physics ,Materials science ,business.industry ,Nanowire ,02 engineering and technology ,Chemical vapor deposition ,Substrate (electronics) ,021001 nanoscience & nanotechnology ,01 natural sciences ,Evaporation (deposition) ,law.invention ,law ,0103 physical sciences ,Scanning transmission electron microscopy ,Optoelectronics ,General Materials Science ,Quantum efficiency ,0210 nano-technology ,business ,Quantum well ,Light-emitting diode - Abstract
High crystalline quality coaxial GaInN/GaN multiple quantum shells (MQSs) grown on dislocation-free nanowires are highly in demand for efficient white-/micro-light-emitting diodes (LEDs). Here, we propose an effective approach to improve the MQS quality during the selective growth by metal-organic chemical vapor deposition. By increasing the growth temperature of GaN barriers, the cathodoluminescent intensity yielded enhancements of 0.7 and 3.9 times in the samples with GaN and AlGaN spacers, respectively. Using an AlGaN spacer before increasing the barrier temperature, the decomposition of GaInN quantum wells was suppressed on all planes, resulting in a high internal quantum efficiency up to 69%. As revealed by scanning transmission electron microscopy (STEM) characterization, the high barrier growth temperature allowed to achieve a clear interface between GaInN quantum wells and GaN quantum barriers on the c-, r-, and m-planes of the nanowires. Moreover, the correlation between the In incorporation and structure features in MQS was quantitatively assessed based on the STEM energy-dispersive X-ray spectroscopy mapping and line-scan profiles of In and Al fractions. Ultimately, it was demonstrated that the unintentional In incorporation in GaN barriers was induced by the evaporation of predeposited In-rich particles during low-temperature growth of GaInN wells. Such residual In contamination was sufficiently inhibited by inserting low Al fraction (∼6%) AlGaN spacers after each GaInN well. During the growth of AlGaN spacers, AlN polycrystalline particles were deposited on the surrounding dummy substrate, which suppressed the evaporation of the predeposited In-rich particles. Thus, the presence of AlGaN spacers certainly improved the uniformity of In fraction through five GaInN quantum wells and reduced the diffusion of point defects from n-core to MQS active structures. The superior coaxial GaInN/GaN MQS structures with the AlGaN spacer are supposed to improve the emission efficiency in white-/micro-LEDs.
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- 2020
21. Suppression of c-plane emission in GaInN/GaN multiquantum shells/nanowires for efficient LEDs
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Sae Katsuro, Weifang Lu, Naoki Sone, Kazuma Ito, Nanami Nakayama, Renji Okuda, Yoshiya Miyamoto, Yukimi Jinno, Shiori Yamamura, Motoaki Iwaya, Tetsuya Takeuchi, and Satoshi Kamiyama
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- 2022
22. Sputtering growth of n-GaN cap layer on core-shell GaInN/GaN multiquantum shell/nanowires
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Yukimi Jinno, Renji Okuda, Naoki Sone, Weifang Lu, Yoshiya Miyamoto, Kazuma Ito, Shiori Yamamura, Sae Katsuro, Nanami Nakayama, Satoshi Kamiyama, Tetsuya Takeuchi, and Motoaki Iwaya
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- 2022
23. MOVPE-grown GaN-based tunnel junctions and optoelectronic devices
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Tetsuya Takeuchi, Satoshi Kamiyama, and Motoaki Iwaya
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- 2022
24. Optimization of tunnel junction growth on m-plane GaN substrate for multi-quantum shell-based devices
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Shiori Yamamura, Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Yukimi Jinno, Nanami Nakayama, Sae Katsuro, Satoshi Kamiyama, Tetsuya Takeuchi, and Motoaki Iwaya
- Published
- 2022
25. Photoluminescence Characterization of Fluorescent Sic with High Boron and Nitrogen Concentrations
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Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Daiki Tanaka, Weifang Lu, and Isamu Akasaki
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010302 applied physics ,Materials science ,Photoluminescence ,Mechanical Engineering ,chemistry.chemical_element ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Fluorescence ,Nitrogen ,Characterization (materials science) ,chemistry ,Chemical engineering ,Mechanics of Materials ,0103 physical sciences ,General Materials Science ,Quantum efficiency ,0210 nano-technology ,Boron - Abstract
The dependence of optical properties on impurity concentrations and excitation power was explored. In particular, it was found that the peak shift of photoluminescence (PL) is proportional to the boron concentration. This might be due to donor–acceptor pair (DAP) recombination via double deep acceptor levels (D-centers), where the occupancy of the D*-center increased with the B concentration, and the recombination via the D*-center for longer wavelengths became dominant. Moreover, the relative constants B and C were calculated by BC model fitting from the internal quantum efficiency (IQE) curve as a function of excitation power. The theoretical extrapolation based on BC model predicted that high impurity concentrations are sufficient to suppress the droop phenomenon of efficiency induced by the increased excitation power.
- Published
- 2020
26. Improved Reverse Leakage Current in GaInN-Based LEDs With a Sputtered AlN Buffer Layer
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Satoshi Kamiyama, Weifang Lu, Ryoya Mano, Tetsuya Takeuchi, Dong-Pyo Han, Isamu Akasaki, Motoaki Iwaya, and Seiji Ishimoto
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Threading dislocations ,Materials science ,business.industry ,Gallium nitride ,Atomic and Molecular Physics, and Optics ,Buffer (optical fiber) ,Electronic, Optical and Magnetic Materials ,law.invention ,Reverse leakage current ,chemistry.chemical_compound ,chemistry ,law ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Diode ,Light-emitting diode - Abstract
In this study, the improvement of reverse leakage current characteristics with a sputtered (SP) -AlN buffer layer in GaInN-based green light-emitting diodes (LEDs) has been presented for the first time. To understand the origin of the improvement, a detailed review and careful analysis of reverse leakage current characteristics were performed. The review and analysis identified that the improvement was primarily caused by the suppression of variable-range-hopping process obtained by replacing conventional low-temperature GaN buffer. Verification that threading dislocations and V- defects can enhance the variable-range-hopping process has been received. We believe that this study will contribute to the realization of green LEDs with advantages of high reliability, a long lifetime, and electrical robustness.
- Published
- 2019
27. Structural and optical impacts of AlGaN undershells on coaxial GaInN/GaN multiple-quantum-shells nanowires
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Hedeki Murakami, Nanami Goto, Tetsuya Tekeuchi, Motoaki Iwaya, Mizuki Terazawa, Kazuyoshi Iida, Satoshi Kamiyama, Naoki Sone, Isamu Akasaki, Weifang Lu, and Dong-Pyo Han
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010302 applied physics ,internal quantum efficiency (iqe) ,Materials science ,business.industry ,Physics ,QC1-999 ,Multiple quantum ,Nanowire ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Nanomaterials ,algan undershell ,point defect diffusion ,0103 physical sciences ,Optoelectronics ,nanowires (nws) ,Electrical and Electronic Engineering ,Coaxial ,gainn/gan mqs ,0210 nano-technology ,business ,Biotechnology - Abstract
The superior crystalline quality of coaxial GaInN/GaN multiple-quantum shell (MQS) nanowires (NWs) was demonstrated by employing an AlGaN undershell during metal-organic chemical vapor deposition. Scanning transmission electron microscopy (STEM) results reveal that the NW structure consists of distinct GaInN/GaN regions on different positions of the NWs and the cores were dislocation-free. High-resolution atomic contrast STEM images verified the importance of AlGaN undershells in trapping the point defects diffused from n-core to MQSs (m-planes), as well as the improvement of the grown crystal quality on the apex region (c-planes). Time-integrated and time-resolved photoluminescence (PL) measurements were performed to clarify the mechanism of the emission within the coaxial GaInN/GaN MQS NWs. The improved internal quantum efficiency in the NW sample was attributed to the unique AlGaN undershell, which was able to suppress the point defects diffusion and reduce the dislocation densities on c-planes. Carrier lifetimes of 2.19 ns and 8.44 ns were derived from time-resolved PL decay curves for NW samples without and with the AlGaN undershell, respectively. Hence, the use of an AlGaN undershell exhibits promising improvement of optical properties for NW-based white and micro light-emitting diodes.
- Published
- 2019
28. Temperature-dependent photoluminescence properties of porous fluorescent SiC
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Yiyu Ou, Satoshi Kamiyama, Haiyan Ou, Weifang Lu, and Abebe Tilahun Tarekegne
- Subjects
Photoluminescence ,Materials science ,Passivation ,lcsh:Medicine ,02 engineering and technology ,01 natural sciences ,Article ,chemistry.chemical_compound ,Etching (microfabrication) ,0103 physical sciences ,Silicon carbide ,Optical materials and structures ,Porosity ,lcsh:Science ,Surface states ,010302 applied physics ,Multidisciplinary ,lcsh:R ,021001 nanoscience & nanotechnology ,Fluorescence ,chemistry ,Chemical engineering ,Optics and photonics ,lcsh:Q ,0210 nano-technology ,Luminescence - Abstract
A comprehensive study of surface passivation effect on porous fluorescent silicon carbide (SiC) was carried out to elucidate the luminescence properties by temperature dependent photoluminescence (PL) measurement. The porous structures were prepared using an anodic oxidation etching method and passivated by atomic layer deposited (ALD) Al2O3 films. An impressive enhancement of PL intensity was observed in porous SiC with ALD Al2O3, especially at low temperatures. At temperatures below 150 K, two prominent PL emission peaks located at 517 nm and 650 nm were observed. The broad emission peak at 517 nm was attributed to originate from the surface states in the porous structures, which was supported by X-ray photoelectron spectra characterization. The emission peak at 650 nm is due to donor-acceptor-pairs (DAP) recombination via nitrogen donors and boron-related double D-centers in fluorescent SiC substrates. The results of the present work suggest that the ALD Al2O3 films can effectively suppress the non-radiative recombination for the porous structures on fluorescent SiC. In addition, we provide the evidence based on the low-temperature time-resolved PL that the mechanism behind the PL emission in porous structures is mainly related to the transitions via surface states.
- Published
- 2019
29. AlGaN-based UV-B laser diode fabricated on AlN with 1 μm periodic concave and convex patterns
- Author
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Motoaki Iwaya, Tomoya Omori, Satoshi Kamiyama, Ayumu Yabutani, Tetsuya Takeuchi, Ryota Hasegawa, Moe Shimokawa, Sho Iwayama, and Hideto Miyake
- Subjects
Materials science ,Laser diode ,business.industry ,law ,Regular polygon ,Optoelectronics ,business ,law.invention - Published
- 2021
30. Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulation
- Author
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Ryosuke Kondo, Ayumu Yabutani, Tomoya Omori, Kazuki Yamada, Eri Matsubara, Ryota Hasegawa, Toma Nishibayashi, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, and Motoaki Iwaya
- Subjects
Physics and Astronomy (miscellaneous) - Abstract
In this study, AlGaN-based ultraviolet-B band laser diodes with 150-mW peak output power in pulsed operation were demonstrated at room temperature. The oscillation wavelength, differential quantum efficiency, and slope efficiency of a laser diode were 300 nm, 3.6%, and 0.15 W/A, respectively. These results were obtained by increasing the injection efficiency and decreasing the positive fixed polarization charge formed at the interface between a p-side waveguide layer and an electron blocking layer when polarization doping is formed in a p-AlGaN cladding layer.
- Published
- 2022
31. High-quality n-type conductive Si-doped AlInN/GaN DBRs with hydrogen cleaning
- Author
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Kana Shibata, Tsuyoshi Nagasawa, Kenta Kobayashi, Ruka Watanabe, Takayuki Tanaka, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Toshihiro Kamei
- Subjects
General Engineering ,General Physics and Astronomy - Abstract
We proposed and investigated hydrogen cleaning for decreasing pits and threading dislocations generated at interfaces of GaN on AlInN in Si-doped graded AlInN/GaN DBRs. We found that hydrogen cleaning was very useful to suppress the threading dislocation generations, resulting in two orders of magnitude less than the case without hydrogen cleaning. A high-quality conductive Si-doped AlInN/GaN DBR was obtained with hydrogen cleaning, showing a maximum reflectivity of 99.8%, a low pit density of less than 106 cm−2, and a reasonably low vertical resistance of 15 Ω.
- Published
- 2022
32. A method for exfoliating AlGaN films from sapphire substrates using heated and pressurized water
- Author
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Eri Matsubara, Ryota Hasegawa, Toma Nishibayashi, Ayumu Yabutani, Ryoya Yamada, Yoshinori Imoto, Ryosuke Kondo, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Kanako Shojiki, Shinya Kumagai, Hideto Miyake, and Motoaki Iwaya
- Subjects
General Engineering ,General Physics and Astronomy - Abstract
Thin films of AlN, AlGaN, and AlGaN-based device structures of approximately 1 cm2 formed on a sapphire substrate were successfully exfoliated from the substrate by immersion in heated (115 °C) and pressurized (170 kPa) water. These thin films were crystalline, grown on periodically formed AlN nanopillars. The water was permeated through intentional voids formed in the AlGaN or AlN crystalline layers by using periodic AlN nanopillars. The exfoliated AlGaN exhibited clear X-ray diffraction peaks from its (0002) plane diffraction. Transmission electron microscopy (TEM) confirmed that exfoliation introduced few additional dislocations and that the device structure was maintained.
- Published
- 2022
33. Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT.
- Author
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Yoshikazu Hirose, Akira Honshio, Takeshi Kawashima, Motoaki Iwaya, Satoshi Kamiyama, Michinobu Tsuda, Hiroshi Amano, and Isamu Akasaki
- Published
- 2006
- Full Text
- View/download PDF
34. Crystal Growth and Characterization of n-GaN in a Multiple Quantum Shell Nanowire-Based Light Emitter with a Tunnel Junction
- Author
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Kazuma Ito, Weifang Lu, Motoaki Iwaya, Yoshiya Miyamoto, Kazuyoshi Iida, Koji Okuno, Naoki Sone, Renji Okuda, Isamu Akasaki, Tetsuya Takeuchi, Koichi Mizutani, Satoshi Kamiyama, and Masaki Ohya
- Subjects
Materials science ,Tunnel junction ,Quantum dot ,Scanning transmission electron microscopy ,Doping ,Analytical chemistry ,Nanowire ,General Materials Science ,Crystal growth ,Metalorganic vapour phase epitaxy ,Epitaxy - Abstract
Here, we systematically investigated the growth conditions of an n-GaN cap layer for nanowire-based light emitters with a tunnel junction. Selective-area growth of multiple quantum shell (MQS)/nanowire core-shell structures on a patterned n-GaN/sapphire substrate was performed by metal-organic vapor phase epitaxy, followed by the growth of a p-GaN, an n++/ p++-GaN tunnel junction, and an n-GaN cap layer. Specifically, two-step growth of the n-GaN cap layer was carried out under various growth conditions to determine the optimal conditions for a flat n-GaN cap layer. Scanning transmission electron microscopy characterization revealed that n++-GaN can be uniformly grown on the m-plane sidewall of MQS nanowires. A clear tunnel junction, involving 10-nm-thick p++-GaN and 3-nm-thick n++-GaN, was confirmed on the nonpolar m-planes of the nanowires. The Mg doping concentration and distribution profile of the p++-GaN shell were inspected using three-dimensional atom probe tomography. Afterward, the reconstructed isoconcentration mapping was applied to identify Mg-rich clusters. The density and average size of the Mg clusters were estimated to be approximately 4.3 × 1017 cm-3 and 5 nm, respectively. Excluding the Mg atoms contained in the clusters, the remaining Mg doping concentration in the p++-GaN region was calculated to be 1.1 × 1020 cm-3. Despite the lack of effective activation, a reasonably low operating voltage and distinct light emissions were preliminarily observed in MQS nanowire-based LEDs under the optimal n-GaN cap growth conditions. In the fabricated MQS-nanowire devices, carriers were injected into both the r-plane and m-plane of the nanowires without a clear quantum confinement Stark effect.
- Published
- 2021
35. Hydrogen in-situ etching of GaN surface to reduce non-radiative recombination centers in 510-nm GaInN/GaN quantum-wells
- Author
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Ryoto Fujiki, Ryo Takahashi, Ryoya Hiramatsu, Keisuke Hozo, Dong-Pyo Han, Motoaki Iwaya, Tetsuya Takeuchi, and Satoshi Kamiyama
- Subjects
Inorganic Chemistry ,Materials Chemistry ,Condensed Matter Physics - Published
- 2022
36. Impact of low-temperature buffer layers on nitride-based optoelectronics.
- Author
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Hiroshi Amano, Satoshi Kamiyama, and Isamu Akasaki
- Published
- 2002
- Full Text
- View/download PDF
37. Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs
- Author
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Tetsuya Takeuchi, Satoshi Kamiyama, Sae Katsuro, Isamu Akasaki, Motoaki Iwaya, Kazuma Ito, Weifang Lu, Koichi Mizutani, Renji Okuda, Naoki Sone, and Nanami Nakayama
- Subjects
Materials science ,Photoluminescence ,business.industry ,General Engineering ,Nanowire ,Bioengineering ,General Chemistry ,Electroluminescence ,Epitaxy ,Atomic and Molecular Physics, and Optics ,law.invention ,law ,Sapphire ,Optoelectronics ,General Materials Science ,business ,Luminous efficacy ,Quantum well ,Light-emitting diode - Abstract
Multi-color emission from coaxial GaInN/GaN multiple-quantum-shell (MQS) nanowire-based light-emitting diodes (LEDs) was identified. In this study, MQS nanowire samples for LED processes were selectively grown on patterned commercial GaN/sapphire substrates using metal–organic chemical vapor deposition. Three electroluminescence (EL) emission peaks (440, 540, and 630 nm) were observed, which were primarily attributed to the nonpolar m-planes, semipolar r-planes, and the polar c-plane tips of nanowire arrays. A modified epitaxial growth sequence with improved crystalline quality for MQSs was used to effectively narrow the EL emission peaks. Specifically, nanowire-based LEDs manifested a clear redshift from 430 nm to 520 nm upon insertion of AlGaN spacers after the growth of each GaInN quantum well. This demonstrates the feasibility of lengthening the EL emission wavelength since an AlGaN spacer can suppress In decomposition of the GaInN quantum wells during ramping up the growth temperature for GaN barriers. EL spectra showed stable emission peaks as a function of the injection current, verifying the critical feature of the non-polarization of GaN/GaInN MQSs on nanowires. In addition, by comparing EL and photoluminescence spectra, the yellow-red emission linked to the In-fluctuation and point defects in the c-plane MQS was verified by varying the activation annealing time and lowering the growth temperature of the GaInN quantum wells. Therefore, optimization of MQS nanowire growth with a high quality of c-planes is considered critical for improving the luminous efficiency of nanowire-based micro-LEDs/white LEDs.
- Published
- 2021
38. Taking Social Support Into Account Regarding the Mental Health of Health Care Practitioners Involved in Treating Patients With COVID-19
- Author
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Kenji Yamamoto, Yuichi Onishi, Katsunaka Mikami, Sintaro Hoshiyama, Natsuru Watanabe, Satoshi Kamiyama, and Keitaro Kimoto
- Subjects
Emotional support ,Coronavirus disease 2019 (COVID-19) ,Health Personnel ,Pneumonia, Viral ,MEDLINE ,Article ,stress ,Betacoronavirus ,Occupational Stress ,03 medical and health sciences ,Social support ,0302 clinical medicine ,Arts and Humanities (miscellaneous) ,Nursing ,Health care ,Humans ,Pandemics ,Applied Psychology ,SARS-CoV-2 ,business.industry ,Perspective (graphical) ,COVID-19 ,Social Support ,Mental health ,030227 psychiatry ,Psychiatry and Mental health ,Mental Health ,Coronavirus Infections ,business ,Psychology ,Psychosocial ,030217 neurology & neurosurgery - Abstract
While the WHO has already published its mental health and psychosocial considerations during the COVID-19 outbreak, there has been almost no discussion of the specific measures that healthcare institutions should take with regard to the mental health of healthcare practitioners. We would like to take this occasion to propose a perspective on this matter from research on social support. Social support can be classified in various ways such as informational, appraisal, instrumental, and emotional. When battling an unknown virus such as this one, having correct informational support is necessary above all else. It is also important that appropriate evaluation for the contribution of practitioners in the institutions as appraisal support. Instrumental support, meanwhile, refers to guaranteeing a system where practitioners can get adequate rest and not excessively strain themselves, and emotional support is when practitioners are shown adequate understanding and appreciation by those around them. There is another view that categorizes social support by how it is given and received: received support and perceived support. It is important for practitioners to receive perceived support, because perceived support is confirmed to have a positive effect on physical and mental health. For the sake of the physical and mental health of healthcare practitioners, it is important for healthcare sites and organizations to take social support into account and for healthcare institutions to adopt the perspective of social support in their day-to-day operations.
- Published
- 2020
39. Modified Shockley Equation for GaInN-Based Light-Emitting Diodes: Origin of the Power- Efficiency Degradation Under High Current Injection
- Author
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Tetsuya Takeuchi, Dong-Soo Shin, Motoaki Iwaya, Jong-In Shim, Satoshi Kamiyama, Isamu Akasaki, and Dong-Pyo Han
- Subjects
Materials science ,business.industry ,02 engineering and technology ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,law.invention ,020210 optoelectronics & photonics ,law ,0202 electrical engineering, electronic engineering, information engineering ,Radiative transfer ,Optoelectronics ,Spontaneous emission ,Quantum efficiency ,Electrical and Electronic Engineering ,business ,Quantum well ,Voltage drop ,Voltage ,Light-emitting diode ,Diode - Abstract
As an attempt to elucidate the origin of the power-efficiency (PE) degradation at high current injection for GaInN-based light-emitting diodes, the injection current is quantitatively separated to radiative and nonradiative current components as a function of applied voltage. It is found that the conventional Shockley equation for the current-voltage curve of a Si pn diode is not adequate for the LED since the carrier transport and recombination processes are quite different from those of the Si pn diode. Hence, we propose a diode equation for an LED where the radiative and nonradiative currents are separately expressed as a function of applied voltage. By analyzing the proposed diode equation, it is concluded that the PE degradation at high injection currents is due to the increase of the junction voltage and the decrease of the internal quantum efficiency at the same time. The phenomena can be understood by the insufficient recombination rate in the active quantum wells.
- Published
- 2019
40. Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible
- Author
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Hiroaki Kurokawa, Daiki Tanaka, Tetsuya Takeuchi, Isamu Akasaki, Satoshi Kamiyama, and Motoaki Iwaya
- Subjects
Materials science ,Mechanics of Materials ,Mechanical Engineering ,Doping ,Analytical chemistry ,General Materials Science ,Sublimation (phase transition) ,Condensed Matter Physics - Abstract
Boron (B) doping sources and crucible materials for stable, reproducible and high concentration B doping in fluorescent SiC (f-SiC) were investigated. When a Ta crucible was used with BN powder as a B doping source were used, B doping did not occur owing to too low C/Si ratio. On the other hand, when a C crucible and suitable Ta components inside the crucible were used, a high B concentration of 1.58 × 1019 cm-3 was obtained, owing to the high C/Si ratio. The results indicate that a C crucible with optimal Ta components and BN powder are suitable for high concentration B doping.
- Published
- 2019
41. Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires
- Author
-
Tetsuya Tekeuchi, Kazuyoshi Iida, Isamu Akasaki, Satoshi Kamiyama, Motoaki Iwaya, Nanami Goto, Atsushi Suzuki, Weifang Lu, Dong-Pyo Han, and Naoki Sone
- Subjects
Materials science ,business.industry ,Nanowire ,Cathodoluminescence ,02 engineering and technology ,Chemical vapor deposition ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Crystallographic defect ,0104 chemical sciences ,law.invention ,law ,Sapphire ,Optoelectronics ,General Materials Science ,Metalorganic vapour phase epitaxy ,0210 nano-technology ,business ,Light-emitting diode ,Diode - Abstract
Coaxial GaInN/GaN multiple-quantum-shells (MQSs) nanowires (NWs) were grown on an n-type GaN/sapphire template employing selective growth by metal-organic chemical vapour deposition (MOCVD). To improve the cathodoluminescence (CL) emission intensity, an AlGaN shell was grown underneath the MQS active structures. By controlling the growth temperature and duration, an impressive and up to 11-fold enhancement of CL intensity is achieved at the top area of the GaInN/GaN MQS NWs. The spatial distribution of Al composition in the AlGaN undershell was assessed as a function of position along the NW and analysed by energy-dispersive X-ray measurement and CL characterisation. By introducing an AlGaN shell underneath GaInN/GaN MQS, the diffusion of point defects from the n-core to MQS is effectively suppressed because of the lower formation energy of vacancies-complexes in AlGaN in comparison to GaN. Moreover, the spatial distribution of Al and In was attributed to the insufficient delivery of gas precursors to the bottom of the NWs and the anisotropy diffusion on the nonpolar m-planes. This investigation can shed light on the effect of the AlGaN undershell on improving the emission efficiency of NW-based white and micro-light-emitting diodes (LEDs).
- Published
- 2019
42. Centimeter-scale laser lift-off of an AlGaN UVB laser diode structure grown on nano-patterned AlN
- Author
-
Kanako Shojiki, Moe Shimokawa, Sho Iwayama, Tomoya Omori, Shohei Teramura, Akihiro Yamaguchi, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Hideto Miyake
- Subjects
General Engineering ,General Physics and Astronomy - Abstract
The centimeter-scale laser lift-off (LLO) of a UVB laser diode structure on nano-patterned AlN was demonstrated by using a 257 nm pulsed laser. The mechanism of this LLO, which can be used for vertical light-emitting device fabrications, was analyzed in detail from the structural and optical properties. The large-area high-yield LLO without cracks was found to be enabled by taking advantage of the intentional in-plane periodic and nanometer-scale inhomogeneous distribution of the AlN molar fraction in the AlGaN layer introduced by growing AlGaN on nano-patterned AlN.
- Published
- 2022
43. Improvement of 650-nm red-emitting GaIn0.17N/GaIn0.38N multiple quantum wells on ScAlMgO4 (0001) substrate by suppressing impurity diffusion/penetration
- Author
-
Ryo Takahashi, Ryoto Fujiki, Keisuke Hozo, Ryoya Hiramatsu, Makoto Matsukura, Takahiro Kojima, Dong-Pyo Han, Motoaki Iwaya, Tetsuya Takeuchi, and Satoshi Kamiyama
- Subjects
Physics and Astronomy (miscellaneous) - Abstract
This study aims to improve the crystalline quality of 650-nm GaIn0.17N/GaIn0.38N red-emitting multiple quantum wells (MQWs) fabricated on a ScAlMgO4 (SCAM) substrate. When using the SCAM substrate, the diffusion and/or penetration of impurities, including Mg, Sc, O, and Al, from the SCAM substrate poses as a challenge. To address this issue, we introduced an Al0.74In0.26N layer between the SCAM substrate and MQWs, which was lattice-matched to the substrate. The Al0.74In0.26N layer effectively blocked the diffusion of impurities from the SCAM substrate into the adjacent layers during the metal-organic vapor epitaxy (MOVPE) growth. For further suppression, a thick AlN layer was deposited on the back of the SCAM substrate before the MOVPE growth, which effectively suppressed impurity penetration from the growth surface. The structure proposed in this study improved the crystallinity and the surface roughness of MQWs, resulting in the improvement of internal quantum efficiency by approximately three times compared to that of the conventional sample.
- Published
- 2022
44. Device fabrication for multiple quantum shell nanowires based laser diodes
- Author
-
Naoki Sone, Isamu Akasaki, Masaki Ohya, Koichi Mizutani, Tetsuya Takeuchi, Satoshi Kamiyama, Koji Okuno, Weifang Lu, Yoshiya Miyamoto, Motoaki Iwaya, Renji Okuda, Kazuyoshi Iida, and Kazuma Ito
- Subjects
Materials science ,business.industry ,Nanowire ,Cathodoluminescence ,Electroluminescence ,Laser ,law.invention ,law ,Etching (microfabrication) ,Tunnel junction ,Optoelectronics ,Light emission ,Metalorganic vapour phase epitaxy ,business - Abstract
GaInN/GaN multiple quantum shells (MQS) nanowires and p-GaN shells were embedded with n-GaN layers through tunnel junction (TJ) shells using metalorganic chemical vapor deposition (MOCVD) method. The MQS nanowires were selectively grown on n-GaN/sapphire or GaN substrates. The fabrication process of laser structures with different resonators of 600500, 750, 1000 μm, and cavity widths of 7, 12, and 17 μm were investigated with insulating layer on the sidewalls of the ridge. The structures of the fabricated devices were characterized by scanning electron microscope (SEM) and current-voltage-light output characteristics were evaluated. Two different methods for mirror formation, etching and cleavage, were developed for the laser devices. During the investigation, a superior mirror formation suffered from the difference in etching rate between GaInN and GaN, generating concaves in the MQS region. Bluegreen light emission was observed from the entire ridge surface of the MQS index-guided laser structures. A maximum current density of emission at 17.9 kA/cm2 has been confirmed in the devices. The electroluminescence and cathodoluminescence measurements demonstrated that the r-plane and c-plane at the top of the MQS are dominant at low current densities, and the m-plane emission becomes stronger as the current density increases.
- Published
- 2021
45. Crystal growth of n-GaN on nanowire-based light emitter including multiple-quantum-shell and tunnel junction
- Author
-
Naoki Sone, Satoshi Kamiyama, Weifang Lu, Yoshiya Miyamoto, Tetsuya Takeuchi, Renji Okuda, Koichi Mizutani, Isamu Akasaki, Koji Okuno, Kazuyoshi Iida, Kazuma Ito, Masaki Ohya, and Motoaki Iwaya
- Subjects
Morphology (linguistics) ,Materials science ,Electrical resistivity and conductivity ,Tunnel junction ,business.industry ,Nanowire ,Shell (structure) ,Optoelectronics ,Crystal growth ,Metalorganic vapour phase epitaxy ,business ,Layer (electronics) - Abstract
A tunnel junction and a n-GaN cap layer grown on the multi-quantum shells (MQS) /nanowires are introduced to decrease the resistivity and optical loss. The selective-area growth of the MQS/nanowire core-shell structures on the template was performed by metalorganic vapour phase epitaxy (MOVPE). Further, the MQS structure was covered with the tunnel junction and the n-GaN cap layer. Here, the growth conditions of the n-GaN cap layer were systemically investigated. The effect of p-GaN shape on the morphology of grown n-GaN cap layer was also assessed.
- Published
- 2021
46. Developments of GaN-based VCSELs with epitaxially grown DBRs
- Author
-
Motoaki Iwaya, Isamu Akasaki, Satoshi Kamiyama, and Tetsuya Takeuchi
- Subjects
Materials science ,business.industry ,law ,Wafer curvature ,Optoelectronics ,Epitaxy ,business ,Laser ,law.invention ,Vertical-cavity surface-emitting laser - Abstract
We will show our two recent results related to GaN-based VCSELs with AlInN/GaN DBRs. One is in-situ wafer curvature control of AlInN/GaN DBRs. Curvature data successfully provides us the strain condition in the AlInN layers, which leads to a high reproducibility for fabricating the AlInN/GaN DBRs. The other is laser operation of the VCSELs with large current apertures. While our previous VCSELs with only 8-15 µm apertures showed RT CW operations, our recent VCSELs now show RT CW operations with 5-30 µm apertures. such larger apertures will eventually provide much higher LOPs in the future.
- Published
- 2021
47. High-concentration doping of donor and acceptor in fluorescent 4H-SiC by closed sublimation growth
- Author
-
Satoshi Kamiyama, Kosuke Yanai, Motoaki Iwaya, Weifang Lu, Yoma Yamane, Isamu Akasaki, and Tetsuya Takeuchi
- Subjects
Materials science ,Photoluminescence ,chemistry ,Doping ,Analytical chemistry ,chemistry.chemical_element ,Quantum efficiency ,Sublimation (phase transition) ,Epitaxy ,Boron ,Acceptor ,Fluorescence - Abstract
As a potential material for white light source, high luminous efficiency of fluorescent SiC requires a concentration of higher than 1.0×1019 cm-3 for both the donor (Nd) and acceptor (Na) and a film thickness of about 120 μm. In this study, we focus on the epitaxial growth of fluorescent 4H-SiC by closed sublimation growth in terms of different growth temperatures to increase the doping concentration of boron and nitrogen. In addition, the effect of growth pressure on the surface morphology was investigated. The photoluminescence (PL) intensity of the sample grown at 1900 °C is higher than that grown at 1800 °C. This result indicates that a higher temperature of 1900 °C can increase the boron (B) and nitrogen (N) doping concentration. However, it was confirmed that the surface of the sample grown at 1900 °C was rough. The surface morphology was significantly improved with an increased pressure to 9000 Pa. Meanwhile, the growth time was extended to increase the film thickness, and the amount of BN, which is the doping source of B acceptor, was increased accordingly. As a result, strong PL emission intensity with high internal quantum efficiency (IQE) was successfully demonstrated in 4H-SiC sample, which is comparable to that in fluorescent 6H-SiC.
- Published
- 2021
48. Improvement of device performance in UV-B laser diodes
- Author
-
Satoshi Kamiyama, Kazuki Yamada, Isamu Akasaki, Moe Shimokawa, Kosuke Sato, Hideto Miyake, Sayaka Ishizuka, Tetsuya Takeuchi, Motoaki Iwaya, Sho Iwayama, Shohei Teramura, Shunya Tanaka, Tomoya Omori, and Yuya Ogino
- Subjects
Materials science ,business.industry ,Doping ,Laser oscillation ,medicine.disease_cause ,Laser ,Polarization (waves) ,law.invention ,Semiconductor laser theory ,law ,medicine ,Optoelectronics ,business ,Realization (systems) ,Ultraviolet ,Diode - Abstract
Ultraviolet (UV) semiconductor lasers are widely used in medical and industrial applications, and their commercialization is strongly desired. Recently, laser oscillation by current injection in the UV-C and UV-B regions has been reported . From now on, it is necessary to demonstrate CW operation, which is indispensable for practical applications. In order to realize this, it is important to understand the internal loss and optical gain of the current devices. In this presentation, we report the details of our UV-B lasers. Specifically, we would like to discuss the results of the variable stripe length analysis of the internal loss of the obtained device and the performance of the UV-B lasers. The results show that the internal losses of the optimized UV-B laser are relatively low and good values are obtained. We also discuss the details of polarization doping, which is very effective in the realization of these UV lasers.
- Published
- 2021
49. Emission wavelength control of GaInN/GaN multi-quantum shells/nanowires grown by metalorganic vapor phase epitaxy
- Author
-
Satoshi Kamiyama, Weifang Lu, Yoshiya Miyamoto, Motoaki Iwaya, Isamu Akasaki, Naoki Sone, Kazuma Ito, Renji Okuda, and Tetsuya Takeuchi
- Subjects
Materials science ,business.industry ,Nanowire ,Epitaxy ,Volumetric flow rate ,law.invention ,Crystal ,Wavelength ,law ,Optoelectronics ,Metalorganic vapour phase epitaxy ,business ,Quantum well ,Light-emitting diode - Abstract
The selective-monolithic growth of coaxial GaInN/GaN NWs was investigated by changing the TEG flow rate, barrier and well growth temperature during MQS growth. In incorporation increased with a higher TEG flow rate. However, In-rich flakes were formed the NWs resulting in the deterioration of crystal quality. Using a higher growth temperature of quantum barriers, abnormal growth at the top of NWs was eliminated. As a result, the CL emission intensity was enhanced. Furthermore, the occurrence of In desorption was suppressed by decreasing the growth temperature of quantum wells. Therefore, these results are promising for NW-based white LEDs.
- Published
- 2021
50. Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis
- Author
-
Motoaki Iwaya, Dong-Soo Shin, Gyeong Won Lee, Jong-In Shim, Sangjin Min, Satoshi Kamiyama, Dong-Pyo Han, Tetsuya Takeuchi, and Isamu Akasaki
- Subjects
Materials science ,lcsh:Medicine ,02 engineering and technology ,01 natural sciences ,Article ,law.invention ,law ,0103 physical sciences ,Thermal ,Radiative transfer ,Lasers, LEDs and light sources ,Voltage droop ,lcsh:Science ,Electrical impedance ,Diode ,010302 applied physics ,Multidisciplinary ,business.industry ,lcsh:R ,Carrier lifetime ,021001 nanoscience & nanotechnology ,Complex dynamics ,Inorganic LEDs ,Optoelectronics ,lcsh:Q ,0210 nano-technology ,business ,Light-emitting diode - Abstract
This study aims to elucidate the carrier dynamics behind thermal droop in GaInN-based blue light-emitting diodes (LEDs) by separating multiple physical factors. To this end, first, we study the differential carrier lifetimes (DCLs) by measuring the impedance of a sample LED under given driving-current conditions over a very wide operating temperature range of 300 K–500 K. The measured DCLs are decoupled into radiative carrier lifetime (τR) and nonradiative carrier lifetime (τNR), via utilization of the experimental DCL data, and then very carefully investigated as a function of driving current over a wide range of operating temperatures. Next, to understand the measurement results of temperature-dependent τR and τNR characteristics, thermodynamic analysis is conducted, which enables to look deeply into the temperature-dependent behavior of the carriers. On the basis of the results, we reveal that thermal droop is originated by the complex dynamics of multiple closely interrelated physical factors instead of a single physical factor. In particular, we discuss the inherent cause of accelerated thermal droop with elevated temperature.
- Published
- 2020
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