Hydrogen in-situ etching of GaN surface to reduce non-radiative recombination centers in 510-nm GaInN/GaN quantum-wells

Authors :: Ryoto Fujiki
Ryo Takahashi
Ryoya Hiramatsu
Keisuke Hozo
Dong-Pyo Han
Motoaki Iwaya
Tetsuya Takeuchi
Satoshi Kamiyama
Source :: Journal of Crystal Growth. 593:126751
Publication Year :: 2022
Publisher :: Elsevier BV, 2022.

Subjects :: Inorganic Chemistry
Materials Chemistry
Condensed Matter Physics

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