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3. Advanced TFT SRAM cell technology using a phase-shift lithography

Author

Yamanaka, Toshiaki, Hashimito, Takashi, Hasegawa, Norio, Tanaka, Toshihiko, Hashimoto, Naotaka, Shimizu, Akihiro, Ohki, Nagatoshi, Ishibashi, Koichiro, Sasaki, Katsuro, Nishida, Takashi, Mine, Toshiyuki, Takeda, Eiji, and Nagano, Takashiro

Subjects
Lithography, Electron beam -- Usage, Polysilicon -- Research, Thin-film circuits -- Design and construction, Static random access memory -- Design and construction, Business, Electronics, Electronics and electrical industries
Abstract

A high-density and high speed SRAM cell is designed and manufactured using an advanced TFT memory cell technology and a phase-shift lithography that allows patterns with spaces less than 0.25 micro m to be made using a conventional stepper. The cell area is very small but the functioning of the cell is stable. A leakage current of 2 fA/cell and an on-/off-current ratio of 4.6 multiplied by 10 to 6th power are obtained with polysilicon PMOS TFT in a memory cell.

Published
1995

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