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Advanced TFT SRAM cell technology using a phase-shift lithography
- Source :
- IEEE Transactions on Electron Devices. July, 1995, Vol. 42 Issue 7, p1305, 9 p.
- Publication Year :
- 1995
-
Abstract
- A high-density and high speed SRAM cell is designed and manufactured using an advanced TFT memory cell technology and a phase-shift lithography that allows patterns with spaces less than 0.25 micro m to be made using a conventional stepper. The cell area is very small but the functioning of the cell is stable. A leakage current of 2 fA/cell and an on-/off-current ratio of 4.6 multiplied by 10 to 6th power are obtained with polysilicon PMOS TFT in a memory cell.
Details
- ISSN :
- 00189383
- Volume :
- 42
- Issue :
- 7
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.17612190