1. Nickel and gold identification in p-type silicon through TDLS: a modeling study
- Author
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Sarra Dehili, Damien Barakel, Olivier Palais, Laurent Ottaviani, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)
- Subjects
010302 applied physics ,[PHYS]Physics [physics] ,Materials science ,Silicon ,Analytical chemistry ,chemistry.chemical_element ,02 engineering and technology ,P type silicon ,Carrier lifetime ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Nickel ,chemistry ,Impurity ,0103 physical sciences ,0210 nano-technology ,Instrumentation ,Microwave ,Recombination - Abstract
In Silicon, impurities introduce recombination centers and degrade the minority carrier lifetime. It is therefore important to identify the nature of these impurities through their characteristics: the capture cross sectionσand the defect levelEt. For this purpose, a study of the bulk lifetime of minority carriers can be carried out. The temperature dependence of the lifetime based on the Shockley-Read-Hall (SRH) statistic and related to recombination through defects is studied. Nickel and gold in p-type Si have been selected for the SRH lifetime modeling. The objective of the analysis is to carry out a study to evaluate gold and nickel identification prior to temperature-dependent lifetime measurements using the microwave phase-shift (μW-PS) technique. The μW-PS is derived from the PCD technique and is sensitive to lower impurity concentrations. It has been shown that both gold and nickel can be unambiguously identified from the calculated TDLS curves.
- Published
- 2021