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541 results on '"Sanchez, Martha I."'

5. Quantum inspire - Qutech's platform for co-development and collaboration in quantum computing

Author

Last, T., Samkharadze, Nodar, Eendebak, P.T., Versluis, R., Xue, X., Sammak, A., Brousse, D., Loh, K.K.L., Polinder, H., Scappucci, G., Veldhorst, M., Vandersypen, L.M.K., Maturova, K., Veltin, J., Alberts, G.J.N., Sanchez, Martha I., and Panning, Eric M.

Subjects
business.industry, Computer science, CMOS, Spin qubit in silicon, Electrical engineering, Cloud computing, Quantum technology, symbols.namesake, Pauli exclusion principle, ComputerSystemsOrganization_MISCELLANEOUS, Qubit, Quantum computer, symbols, Quantum device manufacturing, business, Quantum information science, Quantum, Spin-½
Abstract

The mission of QuTech is to bring quantum technology to industry and society by translating fundamental scientific research into applied research. To this end we are developing Quantum Inspire (QI), a full-stack quantum computer prototype for future co-development and collaborative R&D in quantum computing. A prerelease of this prototype system is already offering the public cloud-based access to QuTech technologies such as a programmable quantum computer simulator (with up to 31 qubits) and tutorials and user background knowledge on quantum information science (www.quantum-inspire.com). Access to a programmable CMOS-compatible Silicon spin qubit-based quantum processor will be provided in the next deployment phase. The first generation of QI's quantum processors consists of a double quantum dot hosted in an in-house grown SiGe/28Si/SiGe heterostructure, and defined with a single layer of Al gates. Here we give an overview of important aspects of the QI full-stack. We illustrate QI's modular system architecture and we will touch on parts of the manufacturing and electrical characterization of its first generation two spin qubit quantum processor unit. We close with a section on QI's qubit calibration framework. The definition of a single qubit Pauli X gate is chosen as concrete example of the matching of an experiment to a component of the circuit model for quantum computation.

Published
2020

7. Carbon Nanotube Scanning Probe for Surface Profiling of DUV and 193 nm Photoresist Pattern

Author

Nguyen, Cattien V, Stevens, Ramsey M. D, Barber, Jabulani, Han, Jie, Meyyappan, M, Sanchez, Martha I, Larson, Carl, Hinsberg, William D, and Arnold, Jim

Subjects
Electronics And Electrical Engineering
Abstract

The continual scaling down of semiconductors to 100 nm and below necessitates a characterization technique to resolve high aspect ratio features in the nanoscale regime. This paper reports the use of atomic force microscope coupled with high aspect ratio multi-walled carbon nanotube scanning probe tip for the purpose of imaging surface profile of photoresists. Multi-walled carbon nanotube tips used in this work are 5-10 nm in diameter and about a micron long. Their exceptional mechanical strength and ability to reversibly buckle enable to resolve steep, deep nanometer-scale features. Images of photoresist patterns generated by 257 nm interference lithography as well as 193 nm lithography are presented to demonstrate multi-walled carbon nanotube scanning probe tip for applications in metrology.

Published
2001

11. Projection lens testing with Moiré effect

Author

Loktev, M., Shao, Y., and Sanchez, Martha I.

Subjects
Physics, Lithography, business.industry, Distortion (optics), Optical metrology, Projection lens, Magnification, Distortion, 02 engineering and technology, Moiré pattern, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, 010309 optics, Lens (optics), Optics, law, Position (vector), 0103 physical sciences, 0210 nano-technology, business, Critical dimension, Petzval field curvature, Moiré effect
Abstract

The application of Moiré effect for testing of a lithographic projection lens is reported. The arrangement presented allows measuring magnification, distortion, field curvature and telecentricity of the lens and can be used for its fine tuning. The method is based on two matched two-dimensional gratings, positioned in mutually conjugated planes; one of them can be translated. Visual interpretation of Moiré fringe pattern allows quick diagnostics of position errors exceeding critical dimension, whereas lateral scanning is applied for measuring of smaller magnitude errors. Field curvature and telecentricity are measured by 3D scanning. Presented results are in a good agreement with those obtained elsewhere.

Published
2017

12. Simulation of shotnoise induced side-wall roughness in electron lithography

Author

Verduin, T., Lokhorst, S.R., Hagen, C.W., Kruit, P., Sanchez, Martha I., and Ukraintsev, Vladimir A.

Subjects
010302 applied physics, Materials science, Lithography, business.industry, Scattering, Monte Carlo methods, 02 engineering and technology, Surface finish, Substrate (electronics), 021001 nanoscience & nanotechnology, 01 natural sciences, Dimensional metrology, Optics, Shotnoise, Resist, 0103 physical sciences, 0210 nano-technology, business, Layer (electronics), Beam (structure), Electron-beam lithography, Simulation
Abstract

We have developed a fast three dimensional Monte-Carlo framework for the investigation of shotnoise induced side-wall roughness (SWR) formation. The calculation outline is demonstrated by an example for an exposure of a 100nm thick layer of negative tone resist (NTR) resist on top of an infinitely thick silicon substrate. We use our home built Monte-Carlo simulator for electron-matter interaction for the purpose of lithography. A pattern of an isolated line is written into the resist layer by scanning a beam with 20 keV electrons over an area of 32nm×1μm (width and length). During the exposure, we use a spot size of 20 nm, beam step size of 4nm and a Poisson distributed exposure dose of 80 μC/cm2, 60 μC/cm2 and 40 μC/cm2. During the exposure of the sample, we record the locations of the inelastic events within the resist layer. The distribution of released acids is determined under the simplified assumption that every inelastic event corresponds to a release. We now construct a three dimensional image of the (in)solubility of the resist layer within a cuboid of 128 nm(256px) wide, 800 nm(1024px) in length and 100 nm(128px) in height. It is obtained by summing the contribution of all acids to every voxel in the three dimensional image. We have used a three dimensional Gaussian with σx,y,z = rd =5nm for the diffusion of the acid. The boundary between exposed and unexposed resist is determined by a threshold. The resulting image of the (in)solubility is analyzed in different ways by considering slices and three dimensional views of the border. The average line edge roughness (LER) is obtained by calculating the standard deviation (one-sigma) of the left and right border from yz-slices. By considering all slices, ranging from the top of the resist layer to the bottom of the substrate, the average LER as a function of the depth from the top surface of the resist layer is obtained. Shotnoise effects are observed as we decrease the exposure dose. An increased effect of shotnoise is observed near the vacuum and substrate interface. One contribution relates to the actual number of acids, which due to the scattering is less near the interface than away from the interface. Another contribution stems from the fact that no acids are found on the vacuum side nor on the substrate side.

Published
2016

22. LCDU improvement of EUV-patterned vias with DSA

Author

Sanchez, Martha I., Panning, Eric M., Guo, Jing, Janes, Dustin W., Mignot, Yann, Johnson, Richard C., Chi, Cheng, Liu, Chi-Chun, Meli, Luciana, Kuroda, Takuya, DiPaola, Domenico A., Tanaka, Yuji, Masahiko, Harumoto, Felix, Nelson M., and Corliss, Daniel A.

Published
2019
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