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3. Contributors

13. Carbon-doped GeTe: A promising material for Phase-Change Memories

23. Contributor contact details

26. Charge transport in thin interpoly nitride/oxide stacked films

37. Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories

46. Heavy-ion upset immunity of RRAM cells based on thin HfO2 layers

48. Charge transport in thin interpoly nitride/oxide stacked films.

50. Investigation of HfO2/Ti based vertical RRAM - Performances and variability